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1. 发明专利

JP2011151303A Method of manufacturing nitride semiconductor device 审中-公开
标题翻译：制造氮化物半导体器件的方法
公开(公告)号：JP2011151303A
公开(公告)日：2011-08-04
申请号：JP2010013186
申请日：2010-01-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIOZAWA KATSUOMI , SAKUMA HITOSHI , SHIROMIZU TATSUYA , YAGYU EIJI
IPC分类号： H01S5/16 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor device which forms a window structure after keeping a basic characteristic of a laser without degrading contact resistance between an electrode and a semiconductor layer by preventing deterioration of an epitaxial growth film due to a heat treatment in window region formation.
SOLUTION: A ZnO film 8 being a solid-phase diffusion source is formed on an entire surface on a p-type GaN contact layer 7, and thereafter a SiO
2 film 20 being a diffusion suppression film is formed in a predetermined region on the ZnO film 8. By performing a heat treatment in an atmosphere containing oxygen, impurity atoms are selectively diffused from the ZnO film 8 to a region including an active region 4, thereby the bandgap of the active layer 4 is selectively expanded while keeping crystallinity, and an optical non-absorptive window region 14 is formed in a resonator end face part.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造氮化物半导体器件的方法，该氮化物半导体器件在保持激光器的基本特性之后形成窗口结构，而不会降低电极和半导体层之间的接触电阻，从而防止外延生长膜的劣化由于在窗口区域形成中的热处理。解决方案：在p型GaN接触层7的整个表面上形成作为固相扩散源的ZnO膜8，之后是作为扩散抑制的SiO 2 膜20 在ZnO膜8上的预定区域中形成膜。通过在含氧的气氛中进行热处理，杂质原子从ZnO膜8选择性地扩散到包括有源区4的区域，由此有源层的带隙 4在保持结晶性的同时选择性地膨胀，并且在谐振器端面部分中形成光学非吸收窗口区域14。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2006135205A Carbonic-acid gas laser device 有权
标题翻译：碳酸气体激光装置
公开(公告)号：JP2006135205A
公开(公告)日：2006-05-25
申请号：JP2004324588
申请日：2004-11-09
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NISHIDA SATOSHI , SUGIHARA KAZUO , SHIROMIZU TATSUYA , HASEGAWA MASAHIKO
IPC分类号： H01S3/034
摘要： PROBLEM TO BE SOLVED: To obtain a carbonic-acid gas laser device wherein it is prevented that the optical absorption coefficient of such an optical component as a partially reflective mirror and a mirror is increased due to temporal change and the refractive index thereof is so varied thereby as to change the beam characteristic of the laser device. SOLUTION: The carbonic-acid gas laser device has a pair of discharge electrodes 4 provided in a vacuum vessel 1, the laser medium 2 of a carbonic-acid gas filled into the vacuum vessel 1, and such a partially reflective mirror 6 that it reflects and transmits the light of the laser medium emitting by the potential difference between the pair of discharge electrodes 4 and its opposite surface comprising zinc selenide to the discharge electrodes 4 is covered with such a film as for oxygen to be unable to pass therethrough. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题为了获得一种碳酸气体激光装置，其中防止由于时间变化和其折射率而使诸如部分反射镜和反射镜的这种光学部件的光学吸收系数增加因此改变激光装置的光束特性。解决方案：碳酸气体激光装置具有设置在真空容器1中的一对放电电极4，填充到真空容器1中的碳酸气体的激光介质2和这样的部分反射镜6 反射和透射由放电电极4的一对放电电极4和其包含硒化锌的相对表面之间的电位差发射的激光介质的光被覆盖有如氧气不能通过的膜。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2002252187A CUTTER FOR SEMICONDUCTOR WAFER, AND METHOD OF CUTTING SEMICONDUCTOR WAFER USING THE SAME 失效
公开(公告)号：JP2002252187A
公开(公告)日：2002-09-06
申请号：JP2001052180
申请日：2001-02-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： SHIROMIZU TATSUYA
IPC分类号： B26F1/20 , B28D5/00 , H01L21/301
摘要： PROBLEM TO BE SOLVED: To simply and quickly provide a cutter for a semiconductor wafer which can prevent the pollution of the surface and can cut out a semiconductor wafer. SOLUTION: A semiconductor wafer is installed in a cavity 5. The guide 3 of a roller (curved-surface body) is engaged with a groove 8, and the roller 1 is turned once in the depth direction, while being pressed from this side of a wafer stage 4. A projection presses the wafer in the order at two places on the same cleavage line and cuts it out.

4. 发明专利

JP2014236028A 半導体装置及び半導体装置の製造方法审中-公开
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：JP2014236028A
公开(公告)日：2014-12-15
申请号：JP2013114861
申请日：2013-05-31
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： SHIROMIZU TATSUYA , TERAI MAMORU , NAKAKI YOSHIYUKI
IPC分类号： H01L23/28 , H01L21/265 , H01L21/336 , H01L25/07 , H01L25/18 , H01L29/78
CPC分类号： H01L24/33 , H01L24/32 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/00012
摘要：【課題】アセンブリの表面に厚みの均一な樹脂層を形成しなくても、封止樹脂と半導体素子との接着信頼性を向上できる半導体装置を得ることを目的としている。【解決手段】本発明の半導体装置50は、表面に主電極1が形成された半導体素子10と、半導体素子10の裏面電極5が接合材料25を介して接続されたベース板26と、半導体素子10及びベース板26を封止する封止樹脂6とを備え、半導体素子10が表面における外周部に微細凹凸面4を有する粗面層15を有し、封止樹脂6が微細凹凸面4に接触していることを特徴とする。【選択図】図2
摘要翻译：要解决的问题：实现能够提高密封树脂和半导体元件之间的粘合可靠性的半导体器件，而不在组件的表面上形成具有均匀厚度的树脂层。解决方案：本实施例的半导体器件50包括：具有形成在表面上的主电极1的半导体元件10; 半导体元件10的背面电极5经由接合材料25连接的基板26; 以及用于封装半导体元件10和基板26的封装树脂6.半导体元件10具有粗糙的表面层15，其具有细小的不规则表面4，并且密封树脂6接触细微不规则表面4。

5. 发明专利

JP2009099754A Nitride semiconductor device and manufacturing method thereof 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：JP2009099754A
公开(公告)日：2009-05-07
申请号：JP2007269701
申请日：2007-10-17
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIROMIZU TATSUYA , TANIMURA JUNJI , SHIOZAWA KATSUOMI , KAWASAKI KAZUE
IPC分类号： H01S5/042
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor device having such a P-type electrode that contact resistance between a P-type contact layer and the P-type electrode is low and stable output and operation can be obtained, and a manufacturing method thereof.
SOLUTION: The nitride semiconductor device according to the present invention has the P-type contact layer 1 of a nitride semiconductor, an AuGaMg film 3 formed on the P-type contact layer 1, and an Au film 4 formed on the AuGaMg film 3.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决问题：为了提供具有这样的P型电极的氮化物半导体器件，P型接触层和P型电极之间的接触电阻低，可以获得稳定的输出和操作，并且其制造方法。解决方案：根据本发明的氮化物半导体器件具有氮化物半导体的P型接触层1，形成在P型接触层1上的AuGaMg膜3和形成在AuGaMg上的Au膜4 电影3.版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2006229012A Semiconductor laser element 审中-公开
标题翻译：半导体激光元件
公开(公告)号：JP2006229012A
公开(公告)日：2006-08-31
申请号：JP2005041699
申请日：2005-02-18
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIROMIZU TATSUYA , TANIMURA JUNJI
IPC分类号： H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser element capable of an efficient and high output while maintaining element characteristics.
SOLUTION: A diffusion preventing layer 4 which is composed of a compound semiconductor containing C (carbon) is arranged in a position separate at a prescribed interval from a guide layer 6. The diffusion preventing layer 4 containing carbon reduces diffusion from a cap layer 1 of a dopant of a high concentrated group II to an activity layer 7. Further, an electronic overflow is reduced via the narrow diffusion preventing layer 4 of a band gap, since the diffusion preventing layer 4 is formed in a position operate at a prescribed interval apart from the activity layer 7. In addition, it is made possible to reduce the crystalline deterioration of the activity layer 7 caused by the diffusion of H and O. As a result, the efficient and high output of the semiconductor laser element can be obtained by reducing contact resistance so that a high concentrated group II dopant is doped in the cap layer 1, while maintaining the element characteristics.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够在保持元件特性的同时有效且高输出的半导体激光元件。解决方案：由包含C（碳）的化合物半导体组成的扩散防止层4被布置在与引导层6隔开规定间隔的位置。含有碳的扩散防止层4减少从帽的扩散高浓度II族的掺杂剂的层1与活性层7.此外，由于扩散防止层4形成在一个位置上的位置，因此通过带隙的窄扩散防止层4减小电子溢出。另外，可以减少H和O的扩散引起的活性层7的结晶劣化。结果，半导体激光元件的高效率和高输出可以通过降低接触电阻而获得，使得在盖层1中掺杂高浓度II族掺杂剂，同时保持元件特性。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2014116333A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2014116333A
公开(公告)日：2014-06-26
申请号：JP2012266849
申请日：2012-12-06
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIROMIZU TATSUYA , TERAI MAMORU , IDAKA SHIORI , NAKAKI YOSHIYUKI
IPC分类号： H01L23/29 , H01L21/336 , H01L23/12 , H01L23/28 , H01L23/31 , H01L29/78
CPC分类号： H01L2224/16245 , H01L2224/73253 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To enhance the adhesive reliability of a sealing resin in a semiconductor device in which a semiconductor element is sealed with a resin.SOLUTION: The semiconductor device related to the present invention comprises: a metal base plate; a semiconductor element in which a first electrode and a second electrode are formed on the rear surface and the front surface respectively and the base plate is joined to the first electrode; a first resin film that is formed on the front surface of the semiconductor element and surrounds the periphery of the second electrode; a second resin film that is directly formed on the front surface of the semiconductor element and surrounds the periphery of the first resin film; and a sealing resin that seals the semiconductor element, the first resin film, the second resin film, and the base plate. The second resin film is thinner than the first resin film and extends to an end of the semiconductor element.
摘要翻译：要解决的问题：提高半导体元件用树脂密封的半导体器件中的密封树脂的粘合可靠性。解决方案：本发明的半导体器件包括：金属基板; 其中分别在后表面和前表面上形成第一电极和第二电极并且基板与第一电极接合的半导体元件; 第一树脂膜，其形成在所述半导体元件的前表面上并且包围所述第二电极的周围; 第二树脂膜，其直接形成在所述半导体元件的前表面上并且包围所述第一树脂膜的周围; 以及密封半导体元件，第一树脂膜，第二树脂膜和基板的密封树脂。第二树脂膜比第一树脂膜薄，并且延伸到半导体元件的端部。

8. 发明专利

JP2013047681A Selection apparatus and selection method 有权
标题翻译：选择装置和选择方法
公开(公告)号：JP2013047681A
公开(公告)日：2013-03-07
申请号：JP2012210937
申请日：2012-09-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KINUGAWA MASARU , TANIMURA JUNJI , HIRANO NORIKO , SHIROMIZU TATSUYA , MASHITA MARIKO , NAKA JIRO
IPC分类号： G01N23/04 , B07C5/342 , B29B17/00
CPC分类号： Y02W30/62
摘要： PROBLEM TO BE SOLVED: To provide a selection apparatus and a selection method capable of more easily performing evaluation whether or not bromine is contained in a resin piece.SOLUTION: The selection apparatus includes: an X-ray source 1 for applying a continuous X-ray 6 by an electron beam whose acceleration voltage is 40 kV or more and 60 kV or less; a filter 14 having a thickness of 50 nm or more and 100 nm or less and formed of molybdenum; an X-ray detector for detecting an X-ray transmitted through the filter 14 and a resin piece 2; and a control part for selecting the resin piece 2 based on the detection data of the X-ray detector. The control part includes: a storage part previously storing transmission intensity data of an X-ray transmitted through the filter 14 and applied to a test piece not containing bromine and formed of the same resin as the resin piece 2; and an operation part for selecting the resin piece 2 by comparing the transmission intensity of the x-ray transmitted through the filter 14 and the resin piece 2 with the data.
摘要翻译：要解决的问题：提供能够更容易地评价树脂片中是否含有溴的选择装置和选择方法。解决方案：选择装置包括：X射线源1，用于通过加速电压为40kV以上且60kV以下的电子束施加连续的X射线6; 具有50nm以上且100nm以下的厚度的由钼形成的滤光器14; 用于检测透过过滤器14的X射线的X射线检测器和树脂片2; 以及基于X射线检测器的检测数据来选择树脂片2的控制部。控制部包括：预先存储通过过滤器14透射的X射线的透射强度数据并施加到与树脂片2相同的树脂形成的不含溴的试验片的存储部; 以及通过将通过过滤器14和树脂片2透射的x射线的透射强度与数据进行比较来选择树脂片2的操作部。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2009255049A Sorting apparatus, sorting method and manufacturing method of recyclable resin material 有权
标题翻译：可回收树脂材料的分选设备，分选方法和制造方法
公开(公告)号：JP2009255049A
公开(公告)日：2009-11-05
申请号：JP2009013294
申请日：2009-01-23
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KINUGAWA MASARU , TANIMURA JUNJI , HIRANO NORIKO , SHIROMIZU TATSUYA , MASHITA MARIKO , NAKA JIRO
IPC分类号： B07C5/344 , B29B17/00 , G01N23/04
CPC分类号： G01N33/442 , B07C5/344 , B07C5/346 , B07C5/368 , B29B17/02 , B29B2017/0203 , B29B2017/0279 , B29K2023/12 , B29K2025/00 , B29K2055/02 , B29K2105/0026 , G01N23/04 , G01N2223/643 , G01N2223/645 , Y02W30/622
摘要： PROBLEM TO BE SOLVED: To solve the problem that an evaluation result is influenced by the thickness of a resin piece when evaluating whether or not bromine is contained in a resin piece. SOLUTION: A first filter 3 containing bromine and a second filter 4 containing an element having an X-ray absorbing end more on the higher energy side than the X-ray absorbing end of bromine are used, and the resin piece 2 is irradiated with continuous X-rays 6 through both filters, and transmission strength of the X-rays is detected. By comparing the result of the transmission strength with the transmission strength detected when transmitting the continuous X-rays through a test piece formed of the same resin as the resin piece 2 without containing bromine through the filter, which is measured beforehand, the presence/absence of bromine in the resin piece 2 is accurately determined. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了解决在评价树脂中是否含有溴时，评价结果受到树脂片的厚度的影响的问题。解决方案：使用含有溴的第一过滤器3和含有比X射线吸收端更高能量侧具有X射线吸收端的元件的第二过滤器4，树脂片2 通过两个滤光片照射连续X射线6，并检测X射线的透射强度。通过将传输强度的结果与通过与树脂片2相同的树脂形成的试验片在不含溴通过预先测量的过滤器传播连续X射线时检测到的透射强度进行比较，的树脂片2中的溴。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009198387A Sorter of bromine-based flame retardant-containing plastic 有权
标题翻译：基于溴的阻燃剂含塑料
公开(公告)号：JP2009198387A
公开(公告)日：2009-09-03
申请号：JP2008041789
申请日：2008-02-22
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIROMIZU TATSUYA , NAKA JIRO , TANIMURA JUNJI , HIRANO NORIKO , KINUGAWA MASARU
IPC分类号： G01N23/12 , B07C5/342 , B29B17/00
CPC分类号： G01N23/083 , B07C5/346 , G01N2223/623 , G01N2223/643
摘要： PROBLEM TO BE SOLVED: To provide a sorter of bromine-based flame retardant-containing plastic using X-ray detection, for invalidating an influence of decline of detection sensitivity in long-hour continuous operation. SOLUTION: This sorter of bromine-based flame retardant-containing plastic includes: an X-ray source for generating an X-ray; a sample holding device for holding a plastic sample; an X-ray detector for detecting an X-ray transmitted through the plastic sample; a bromine inclusion including bromine having a regulated concentration; a data processing device for performing data analysis of intensity of transmission X-rays detected from the plastic sample and the bromine inclusion, and discriminating the quantity of the bromine-based flame retardant contained in the plastic sample; and a sorting mechanism for sorting the plastic sample having a bromine concentration higher than the regulated concentration of the bromine inclusion based on a signal from the data processing device. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供使用X射线检测的含溴系阻燃剂塑料的分选机，在长时间连续运转中使检测灵敏度下降的影响无效。解决方案：这种含溴基阻燃剂塑料的分选机包括：用于产生X射线的X射线源; 用于保持塑料样品的样品保持装置; 用于检测通过塑料样品透射的X射线的X射线检测器; 含有调节浓度的溴的溴包合物; 数据处理装置，用于对从塑料样品和溴夹杂物检测到的透射X射线的强度进行数据分析，以及鉴别包含在塑料样品中的溴系阻燃剂的量; 以及用于根据来自数据处理装置的信号对溴浓度高于溴含量的调节浓度的塑料样品进行分选的分选机构。版权所有（C）2009，JPO＆INPIT

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