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1. 发明专利

JP2005011922A Double-sided copper clad substrate equipped with heat sink, and semiconductor device using it 审中-公开
标题翻译：配有散热器的双面铜箔基板和使用其的半导体器件
公开(公告)号：JP2005011922A
公开(公告)日：2005-01-13
申请号：JP2003173084
申请日：2003-06-18
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OZAWA TAKUO , SONE TAKANORI
IPC分类号： H05K7/20 , H01L23/12 , H01L23/36
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a double-sided copper clad substrate equipped with a heat sink having fins in which damage, e.g. exfoliation, is eliminated and heat dissipation characteristics are enhanced. SOLUTION: In the double-sided copper clad substrate, a ceramic substrate having first and second opposing faces includes a first copper plate bonded to the first surface and a second copper plate bonded to the second surface. The second copper plate comprises a heat sink having fins. The ceramic substrate is bonded to the first and second copper plates directly or through a solder material containing an active metal. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种配备有散热片的双面铜包覆基板，散热片具有损坏，例如，剥离，消除，散热特性得到提高。解决方案：在双面铜包覆基板中，具有第一和第二相对面的陶瓷基板包括结合到第一表面的第一铜板和结合到第二表面的第二铜板。第二铜板包括具有散热片的散热片。陶瓷基板直接或通过含有活性金属的焊料材料结合到第一和第二铜板上。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2004323872A Electroless plating bath 审中-公开
公开(公告)号：JP2004323872A
公开(公告)日：2004-11-18
申请号：JP2003116529
申请日：2003-04-22
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MAEDA AKIRA , MAEKAWA TAKESHI , MIYASHITA SHOJI , OZAWA TAKUO , SONE TAKANORI , UMEMURA TOSHIO , ARAI SUSUMU
IPC分类号： C23C18/48
摘要： PROBLEM TO BE SOLVED: To obtain an electroless plating bath for reducing and precipitating a plurality of metals at the same time, even when there are great differences in a standard potential among the plurality of the metals.
SOLUTION: This electroless plating bath is an aqueous solution comprising a plurality of metals contained as at least one of a chloride, an iodide, a nitrate and a sulfide, titanium trichloride (TiCl
3 ), disodium ethylenediaminetetraacetate (Na
2 -EDTA), trisodium citrate (Na
3 -Citrate), nitrilotriacetic acid (NTA), sodium thiosulfate (Na
2 S
2 O
3 ) and sodium pyrosulfite (Na
2 S
2 O
5 ), which are all dissolved.
COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2003188324A HEAT DISSIPATING BASE MATERIAL, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE CONTAINING THE SAME 审中-公开
公开(公告)号：JP2003188324A
公开(公告)日：2003-07-04
申请号：JP2001387630
申请日：2001-12-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITO TAKEFUMI , OZAWA TAKUO , UMEMURA TOSHIO , TERAMOTO HIROYUKI
IPC分类号： B22F7/08 , C22C9/00 , H01L23/36 , H01L23/373
摘要： PROBLEM TO BE SOLVED: To provide a heat dissipating base material which is more superior in thermal conductivity than its mother material. SOLUTION: This heat dissipating base material is mounted with a semiconductor device to cool it down. The dissipating base material is provided with a first and a second surface which are nearly parallel with each other. The dissipating base material is composed of a mother material 1 where a semiconductor device is mounted on the first surface and rods 2 which have higher thermal conductivity than the mother material 1 and are implanted upright and fixed on the second surface of the mother material 1. The rods 2 are partially exposed to the air. The base material 1 is formed of copper or copper alloy. The rods 2 are formed of carbon fiber-reinforced carbon composite material, carbon-based metal composite material, carbon fiber/metal composite material containing carbon fiber-reinforced metal, or high thermal conductivity metal material. COPYRIGHT: (C)2003,JPO

4. 发明专利

JP2003152321A METAL JOINT 审中-公开
公开(公告)号：JP2003152321A
公开(公告)日：2003-05-23
申请号：JP2001352973
申请日：2001-11-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEDA AKIRA , OZAWA TAKUO , SONE TAKANORI , UMEMURA TOSHIO , KOYAMA MASATO , ARAI HITOSHI , NAGAMINE TAKAHIRO , ABE TAKESHI
IPC分类号： H05K3/34
摘要： PROBLEM TO BE SOLVED: To obtain a metal joint which is superior in resistance to impact resistance. SOLUTION: An electronic module is composed of a printed wiring board 4 and an electronic part 1, and an electrode (connection terminal) 3 of the printed wiring board 4 and an electrode (connection terminal) 7 of the electronic part 1 are connected by a metal joint. The metal joint has a solder layer 8 and an Ni-based layer 6 (containing a P-rich layer 10), and the Ni-based layer 6 contains 4 to 10 wt.% P and 0.1 to 5.0 wt.% Zn and/or 0.05 to 3 wt.% Mg.

5. 发明专利

JP2003130240A FUSABLE PLUG, MANUFACTURING METHOD THEREOF AND FREEZER COMPRISING IT 有权
公开(公告)号：JP2003130240A
公开(公告)日：2003-05-08
申请号：JP2001330605
申请日：2001-10-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEDA AKIRA , OZAWA TAKUO , UMEMURA TOSHIO , OGOSE YASUAKI , TAKATANI SHIRO
IPC分类号： F16K17/38 , C22C28/00 , F25B49/02
摘要： PROBLEM TO BE SOLVED: To provide a fusable plug not containing a toxic substance such as Cd or Pd, being high in reliability, having a lower cost than a relief valve and correspondable to a next generation refrigerant, and to provide a manufacturing method thereof and a freezer comprising it. SOLUTION: This fusable plug comprises a plug member formed of a body having a relief hole penetrating the freezer and low melting point metal fixed on the relief hole so as to block the relief hole. The low melting point metal has a solidus line temperature higher than a temperature for the refrigerant included in the freezer and is formed by bismuth (Bi), indium (In) and tin (Sn).

6. 发明专利

JP2002310543A FUSIBLE PLUG AND ITS PRODUCING METHOD 失效
公开(公告)号：JP2002310543A
公开(公告)日：2002-10-23
申请号：JP2001108876
申请日：2001-04-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEDA AKIRA , OZAWA TAKUO , UMEMURA TOSHIO , OGOSE YASUAKI
IPC分类号： F25B1/00 , C22C28/00 , F16K17/38 , F25B45/00 , F25B49/02
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable fusible plug containing no harmful substance, e.g. Cd or Pb, and suitable for next generation refrigerant at a cost lower than that of a safety valve. SOLUTION: The fusible plug 1 for use in a refrigerating system encapsulating a refrigerant selected from R125, R143a, R404A, R407B, R410A, R410B and R507A comprises a body 3 having a spill port extending between the inside and outside of the refrigerating system, and a plug member of low melting metal secured in the spill hole to choke it, wherein the low melting metal comprises Sn: X wt.%, Bi: Y wt.%, and the remainder of In and is represented by a formula XSn-YBi-(100-X-Y)In (4

7. 发明专利

JP2001239392A LEAD-FREE SOLDER, SOLDER JUNCTION AND IT'S JOINTING METHOD USING THE SAME 失效
公开(公告)号：JP2001239392A
公开(公告)日：2001-09-04
申请号：JP2000053329
申请日：2000-02-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： OZAWA TAKUO , MAEDA AKIRA , UMEMURA TOSHIO
IPC分类号： B23K31/02 , B23K35/26 , B23K101/36 , C22C13/02 , C22F1/00
摘要： PROBLEM TO BE SOLVED: To provide lead free solder which, including no lead responsible for environmental problem, has excellent wet-ability, improves joint reliability, and which can use conventional process. SOLUTION: The lead free solder is composed with Zn 0.1-2.5 wt.%, Bi 3-10 wt.%, In 3-12 wt.%, and residual Sn.

8. 发明专利

JP2000307228A SOLDER JOINTING METHOD CONTAINING NO LEAD AND ELECTRONIC MODULE MANUFACTURED THEREBY 失效
公开(公告)号：JP2000307228A
公开(公告)日：2000-11-02
申请号：JP11499599
申请日：1999-04-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEDA AKIRA , OZAWA TAKUO , UMEMURA TOSHIO
IPC分类号： B23K35/14 , B23K35/00 , B23K35/02 , B23K35/26 , H01L21/52 , H01L21/60 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To provide a satisfactory jointing part by forming a first alloy layer whose temperature is lower than the melting point of an alloy layer and which does not contain lead on an electronic part, forming a second alloy layer whose melting point is lower than the first alloy layer and which does not contain lead on the electronic part loading face of a substrate, bringing the first and second alloy layers in contact with each other and heating them. SOLUTION: First alloy layers 2 are formed on electronic parts 1. Second alloy layers 3 are formed on a board 4. The first alloy layers 2 are set to have melting points higher than those of the second alloy layers 3 and any layer does not contain lead. The first alloy layers 2 are brought into contact with the second alloy layers 3, and they are heated in a range between the melting points of the second alloy layers 3 and the melting points of the first alloy layers 2. Since junction can be realized by using the melting diffusion of the alloy of the second alloy layers 3, the heating of electronic parts can be suppressed and satisfactory junction can be obtained.

9. 发明专利

JP2003243445A METAL JUNCTION AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：JP2003243445A
公开(公告)日：2003-08-29
申请号：JP2002045121
申请日：2002-02-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： MAEDA AKIRA , OZAWA TAKUO , SONE TAKANORI , UMEMURA TOSHIO
IPC分类号： B23K1/00 , H01L21/60
摘要： PROBLEM TO BE SOLVED: To provide a metal junction in which a contact risk between adjacent electrodes is reduced without loading ultrasonic vibration and excellent junction is obtained, and to provide a manufacturing method thereof. SOLUTION: One side and the other side electrode terminals are heated by temperatures lower than those of their melting points and more than the lowest one among those caused by a mutual eutetic crystal reaction. Specifically, the one side electrode terminal containing Ag as a principal ingredient and the other side electrode terminal containing In as a principal ingredient are heated under a temperature condition of 144°C through 156°C. Consequently, in the metal junction, a first remaining surface whose principal ingredient is remaining Ag resulted from a surface layer of the one side electrode terminal prior to joining, a second remaining surface whose principal ingredient is remaining In resulted from a surface layer of the other side electrode terminal prior to being joined, Ag constituting the surface layer of the one side electrode terminal prior to joining and In constituting the surface layer of the other side electrode terminal prior to joining are subjected to an eutetic reaction. As a result, products produced from the eutetic reaction are contained therein. COPYRIGHT: (C)2003,JPO

10. 发明专利

JP2003183792A THERMOCONDUCTIVE SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE HAVING THE THERMOCONDUCTIVE SUBSTRATE 审中-公开
公开(公告)号：JP2003183792A
公开(公告)日：2003-07-03
申请号：JP2001387635
申请日：2001-12-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： OZAWA TAKUO , ITO TAKEFUMI , UMEMURA TOSHIO , MAEDA AKIRA , TERAMOTO HIROYUKI
IPC分类号： B22D18/02 , B22D19/00 , B22D19/14 , B22D23/00 , C22C1/10 , C22C47/04 , C22C47/06 , C22C47/08 , C22C47/12 , C22C49/12 , C22C101/10 , C22C121/02 , H01L23/373
摘要： PROBLEM TO BE SOLVED: To provide a thermoconductive substrate which consists of a carbon fiber material and a highly thermoconductive metallic material, has satisfactory adhesion between both the materials, and has superior mechanical and thermal characteristics. SOLUTION: The thermoconductive substrate arranges a plurality of carbon fibers in the approximately same direction in a metal matrix, wherein the metal matrix includes a copper layer which coats at least a side wall of the carbon fibers, and a layer of an intermetallic compound of copper and tin for filling gaps among carbon fibers coated with the copper layer. The method for manufacturing the thermoconductive substrate which arranges the plurality of carbon fibers in the metal matrix, includes a step of forming the intermetallic compound so as to leave the copper layers around the carbon fibers. COPYRIGHT: (C)2003,JPO

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