会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明专利
    • SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
    • JPH09121019A
    • 1997-05-06
    • JP27758795
    • 1995-10-25
    • MITSUBISHI ELECTRIC CORP
    • MATSUKI MASATOSHI
    • H01L21/50H01L25/07H01L25/18
    • PROBLEM TO BE SOLVED: To realize both high pressure resistance of a main current terminal and reduction in inductance. SOLUTION: Main current terminals 31, 32 electrically coupled with a main electrode of an IGBT element 27 loaded on a power board 30 are projected outward from a side wall of a case 21. The main current terminals 31, 32 are flat-shaped having main portions of the same plan view contour, and are arranged in parallel to and overlapped with each other. Thus, the inductance of the main current terminals 31, 32 may be restrained to a low level. An insulating material 33 is inserted between portions of the main current terminals 31, 32 which protrude outward from the case 21. The insulating material 33 protrudes outward from the plan view contours of the main current terminals 31, 32. Thus, the pressure resistance of these portions of the main current terminals 31, 32 may be maintained at a high level. Since an electrically insulating filler 43 is filled within the case 21, the pressure resistance of portions of the main current terminals 31, 32 which are housed in the case 21 may also be maintained at a high level.