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1. 发明专利

JP2005167291A Solar cell manufacturing method and semiconductor device manufacturing method 审中-公开
标题翻译：太阳能电池制造方法和半导体器件制造方法
公开(公告)号：JP2005167291A
公开(公告)日：2005-06-23
申请号：JP2005069769
申请日：2005-03-11
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： ARIMOTO SATOSHI
IPC分类号： H01L31/04
CPC分类号： H01L31/068 , H01L31/022441 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To obtain a manufacturing method of a solar cell with a structure in which electric separation of pn junction can be realized by simple method and manufacturing cost and productivity can be improved remarkably, and a semiconductor device manufacturing method having a new electrode forming method when using metal paste material in a structure body having a silicon nitride film or a titanium oxide film on a surface of a substrate. SOLUTION: By preparing and sintering glass paste 104, which is made of glass which has property to dissolve silicon, as the main component on an n-type diffusion layer 101 of pn junction, the n-type diffusion layer 101 is eroded by the glass paste 104. A p-type inversion layer 105 is formed by diffusing aluminum to an n-type diffusion layer 101 under a P electrode 103 which is made of aluminum silver paste and inverting to p-type. Thereby, electric separation of pn junction is realized. And moreover, by preparing and sintering metal paste material on an insulating film, the insulating film is penetrated so as to electrically contact with a semiconductor substrate. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题为了获得具有以下结构的太阳能电池的制造方法，其中通过简单的方法可以实现pn结的电分离，并且可以显着提高制造成本和生产率，以及具有在基板的表面具有氮化硅膜或氧化钛膜的结构体中使用金属糊料的新的电极形成方法。解决方案：通过在pn结的n型扩散层101上制备并烧结由具有溶解硅的性质的玻璃制成的玻璃浆料104作为主要成分，n型扩散层101被腐蚀通过玻璃浆料104形成p型反转层105，在由铝银膏制成的P电极103和p型反转的P电极103的下面，将铝扩散到n型扩散层101上。从而实现pn结的电分离。此外，通过在绝缘膜上制备和烧结金属糊料，绝缘膜被穿透以与半导体衬底电接触。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JPH08204220A SOLAR CELL, SOLAR CELL MODULE AND SOLAR CELL MODULE GROUP 失效
公开(公告)号：JPH08204220A
公开(公告)日：1996-08-09
申请号：JP1418995
申请日：1995-01-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWAMA YOSHITATSU , ISHIHARA TAKASHI , ARIMOTO SATOSHI , MORIKAWA HIROAKI , TAKAMI AKIHIRO , MATSUNO YOSHINORI , SUGUMOTO HIDEO , NISHIMOTO YOICHIRO
IPC分类号： E04D13/18 , G09F7/00 , H01L31/0236 , H01L31/0352 , H01L31/04 , H01L31/042 , H01L31/048
摘要： PURPOSE: To recognize the received reflection light surely and visually at the position of an observer by providing means for altering the reflecting direction of an incident light depending on the surface position of a power generation layer. CONSTITUTION: When a solar light impinges vertically on an irregular structure 2 formed by anisotropic etching, the light is reflected twice on the surface and almost all pass through a solar cell 1 as a transmission light 6. When the solar light 4 impinges obliquely on the irregular structure 2 at some angle or less, the light is reflected once on the surface but since the light impinges on the incident plane at an incident angle close to 90 deg.C, almost all of the light pass through the solar cell 1 as a transmission light 6. Since the irregular structure 2 has flat mirror surface and the lights impinge thereon in parallel, small quantity of reflection lights also advances substantially in parallel to produce a high intensity reflection light 5, as a whole, which can be recognized surely and visually when the solar cell is observed.

3. 发明专利

JPH05327126A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH05327126A
公开(公告)日：1993-12-10
申请号：JP12343892
申请日：1992-05-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMOTO SATOSHI
IPC分类号： G02B6/122 , G02B6/12 , H01S5/00 , H01S3/18
摘要： PURPOSE:To improve regrowth interface characteristics at the time of forming a current blocking layer by regrowing after a ridge waveguide is formed. CONSTITUTION:A ridge waveguide constituted of a clad layer 3 of AlGaAs is buried by epitaxially growing a current blocking layer 6 composed of GaInP after a regrowth interface protecting layer 5 is formed. Hence regrowth interface characteristics are improved, so that leak current and threshold current are reduced, and high reliability can be realized.

4. 发明专利

JPH05243676A 失效
公开(公告)号：JPH05243676A
公开(公告)日：1993-09-21
申请号：JP7905692
申请日：1992-02-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMOTO SATOSHI , NISHIMURA TAKASHI , MOTODA TAKASHI
IPC分类号： H01S5/00 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/34 , H01S3/18
摘要： PURPOSE:To reduce the threshold current density of a semiconductor laser device. CONSTITUTION:A first-conductivity-type clad layer 102, an active layer 103, and a second-conductivity-type clad layer 105 are provided on a first- conductivity-type substrate 101. Besides a multiquantum barrier 104 is provided between the second-conductivity-type clad layer 105 and the active layer 103, and the active layer 103 has a layer to which strain is applied. Accordingly, threshold current is greatly reduced, and it becomes possible to obtain high- output semiconductor lasers capable of high-temperature operation.

5. 发明专利

JPH04303987A MANUFACTURE OF SEMICONDUCTOR LASER 失效
公开(公告)号：JPH04303987A
公开(公告)日：1992-10-27
申请号：JP9348591
申请日：1991-03-29
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMOTO SATOSHI
IPC分类号： H01S5/00
摘要： PURPOSE:To improve the regrown interface characteristic of a contact layer without generating a thermally deformed layer by removing the part of a semiconductor layer corresponding to the crest section of a ridge by selective etching after the semiconductor layer is grown by epitaxial growth and forming a current block layer. CONSTITUTION:A double hetero-structure is composed of a lower clad layer 2 of the first conductivity type, active layer 3, and upper clad layer of the second conductivity type. Then only the layer 4 is worked to a ridge-like shape by leaving the layer 4 by a prescribed thickness only. After forming the ridge 9b, a semiconductor layer 7b of the first conductivity type which becomes a current block is formed so as to cover the entire surface of the ridge 9b. Then the current block layer 7b is formed by only removing the layer 7b from the crest section of the ridge which becomes a current path by selective etching. Since the current block layer 7b is formed without performing selective growth using a dielectric film, no thermally deformed layer is formed and the regrown interface characteristic of a contact layer 8 is improved when the layer 8 is regrown.

6. 发明专利

JPH04192482A MANUFACTURE OF SEMICONDUCTOR LASER OF RIDGE WAVEGUIDE TYPE 失效
公开(公告)号：JPH04192482A
公开(公告)日：1992-07-10
申请号：JP32419590
申请日：1990-11-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMOTO SATOSHI
IPC分类号： H01S5/00
摘要： PURPOSE:To simplify a process and to prevent a laser characteristic from being deteriorated by a method wherein an n-type GaAs current-blocking layer and a p-type GaAs contact layer are formed by one crystal growth operation by using a low-pressure MOCVD method which uses trimethylgallium. CONSTITUTION:The thickness of a P-type GaAs cap layer 6b is made thick; an SiN film 9 is patterned; an inverted mesa ridge structure 13 is formed in a direction while trimethylgallium TMG is used as a group III material, AsH3 is used as a group V material and a low-pressure MOCVD method is used, an n-type GaAs current-blocking layer 7b and a P-type GaAs contact layer 14 are grown. As a result, a crystal is grown selectively in such a way that the ridge 13 is buried excluding the part of the SiN film 9; a prescribed shape is obtained. That is to say, a semiconductor laser device of ridge waveguide type is realized by two crystal growth operations. Thereby, a process is simplified and it is possible to prevent a laser characteristic from being deteriorated.

7. 发明专利

JPH04144296A SEMICONDUCTOR LASER DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH04144296A
公开(公告)日：1992-05-18
申请号：JP26882290
申请日：1990-10-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMOTO SATOSHI
IPC分类号： H01S5/00
摘要： PURPOSE:To improve a characteristic in a second growth of the interface between a first upper clad layer of an AlGaAs system and a block layer, by using the structure, in which removed is, an etching stopper layer of GaInP, from the region other than the ridge part, on the first upper clad layer of an AlGaAs system provided on an activated layer. CONSTITUTION:On a first upper clad layer 4b of p-type AlGaAs, provided is the regular mesa ridge of a three-layer structure comprising a p-type GaAs layer 5, a second upper clad layer 4c of p-type AlGaAs, and a p-type GaInP layer 9, and is used as the shape of a device. Thereafter, using a dielectric film 6 as a mask for a selective growth, the second epitaxial growth by an MOCVD method is performed. Thereby, a block layer 7 of n-type GaAs is made to grow so as to embed a ridge structure 10b thereinto. Thereafter, the dielectric film 6 is removed, and by a third epitaxial growth, a contact layer 8 of p-type GaAs is formed. Further, on the reverse of a substrate 1 and on the surface of the contact layer 8, an n-side electrode 15 and a P side electrode 16 are provided respectively, and by cutting and opening, end faces 17, 18 are formed. As a result, the characteristic in the second growth of the interface between the first upper clad layer of AlGaAs and the block layer of GaAs can be improved to a great extent.

8. 发明专利

JPH04137581A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH04137581A
公开(公告)日：1992-05-12
申请号：JP26256090
申请日：1990-09-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMOTO SATOSHI , KAGEYAMA SHIGEMI
IPC分类号： H01S5/00
摘要： PURPOSE:To prevent the deterioration of the double-heterojunction characteristic of a semiconductor laser device by forming an n-type GaAs layer on a substrate in such a way that an inverted mesa ridge stripe is buried, with the thickness being made lower than the height of the mesa, and a double-heterostructure of an AlGaAs material. CONSTITUTION:After a p-type GaAs substrate 11 is patterned by using a dielectric film 18 of SiN, etc., an inverted mesa ridge stripe is formed by etching in direction . After forming the stripe, an n-type GaAs block layer 12 is formed by performing the first epitaxial growth by using the film 18 as its is as a selective growth mask. Then, after removing the film 18, a p-type AlGaAs clad layer 13, AlGaAs active layer 14, n-type AlGaAs clad layer 15, and n-type GaAs contact layer 16 are successively formed on the block layer 12 in the second epitaxial growth process. Since the double-heterostructure and refractive index distribution, both of which are required for laser oscillation, can be realized in one time of epitaxial growth process without working, very high reliability can be obtained.

9. 发明专利

JPH0376184A FORMATION OF PROTECTIVE FILM OF REFLECTING SURFACE OF SEMICONDUCTOR LASER 失效
公开(公告)号：JPH0376184A
公开(公告)日：1991-04-02
申请号：JP21172189
申请日：1989-08-17
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMOTO SATOSHI
IPC分类号： H01S5/00 , H01S5/028
摘要： PURPOSE:To elevate a COD level and to obtain a high output by using the anodizing film of semiconductor itself as a reflecting-surface protective film. CONSTITUTION:Laser end-faces are anodized and the anodizing films 5 of semiconductor itself are acquired in a clad layer 1, in which light and currents arc confined on laser operation, an active layer 2, in which light is generated, the reflecting surfaces 3 of a laser and reflecting-surface protective films 4. The thickness of the anodizing film 5 is thinned extremely as approximately several dozen or one hundred Angstrom . The thickness of the anodizing film 5 is thinned extremely because the reflectivity of the laser end-face is not subject to the influence in order to control the reflectivity of the laser end-face by the reflecting-surface protective film 4.

10. 发明专利

JPH0245991A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH0245991A
公开(公告)日：1990-02-15
申请号：JP19687088
申请日：1988-08-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMOTO SATOSHI
IPC分类号： H01S5/00
摘要： PURPOSE:To acquire a laser of low threshold current, high reliability and a high output by using GaInP material alone. CONSTITUTION:An n-type GaP clad layer 3b, an n-type Gay1In1-y1P graded buffer layer 8b, a GaXIn1-XP active layer 4b, a p-type Gay2In1-y2P graded buffer layer 9b, a p-type GaP clad layer 5b, an n-type GaP block layer 6b, and a p-type GaP contact layer 7b are formed on an n-type GaP substrate 1. Since the buffer layers 8b, 9b whose ratio of Ga and In is changed gradually are interposed between the clad layers 3b, 5b and the active layer 4b, it becomes possible to carry out epitaxial growth although a lattice constant of the clad layer differs from that of the active layer. Since Al and As are not included, high reliability is realized without effect of oxygen during crystal growth and mutual contamination of P and As. The GRIN-SCH structure provides a low threshold current.

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