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1. 发明专利

JPS5837690A DRIVING OF GAS DISCHARGE TYPE DISPLAY 失效
公开(公告)号：JPS5837690A
公开(公告)日：1983-03-04
申请号：JP13574881
申请日：1981-08-28
申请人： MATSUSHITA ELECTRONICS CORP
发明人： SHIYOUJI MASAMI , AOYAMA TAKASHI , OKAMOTO TAKIO , ITOU KOUJI
IPC分类号： G09G3/282

2. 发明专利

JPS5231677A PRODUCTION METHOD OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5231677A
公开(公告)日：1977-03-10
申请号：JP10084975
申请日：1975-08-19
申请人： MATSUSHITA ELECTRONICS CORP
发明人： HOSOI TAMIKAZU , HIRAKAWA KENJI , ITOU KOUJI
IPC分类号： H01L29/73 , H01L21/22 , H01L21/331 , H01L29/08 , H01L29/36
摘要： PURPOSE:To obtain a bipolar transistor with high current amplification factor, by means of simultaneously diffusing the two kinds of impurities of which diffusion speeds are different each other thereby producing the emitter base junction in deep distance.

3. 发明专利

JPS5217770A SEMIICONDUCTOR DEVICE 失效
公开(公告)号：JPS5217770A
公开(公告)日：1977-02-09
申请号：JP9404675
申请日：1975-07-31
申请人： MATSUSHITA ELECTRONICS CORP
发明人： ITOU KOUJI , HOSOI TAMIKAZU , TAKAYAMA YUUICHIROU
IPC分类号： H01L29/73 , H01L21/331 , H01L29/08
摘要： PURPOSE:To provide an element of less current concentration and larger current amplification in a way that collector domain is not protruded into base domain, and the distan e from emmitter domain end to emitter electrode is set at a given value.

4. 发明专利

JPS58132967A BIPOLAR TRANSISTOR 失效
公开(公告)号：JPS58132967A
公开(公告)日：1983-08-08
申请号：JP1608382
申请日：1982-02-03
申请人： MATSUSHITA ELECTRONICS CORP
发明人： ITOU KOUJI , KUWAGATA MASAHIRO , HATSUTORI HIROTSUGU
IPC分类号： H01L29/73 , H01L21/331 , H01L29/10
摘要： PURPOSE:To reduce a surface current density by forming a region of the same conductivity type as the base along the edge of base emitter junction area. CONSTITUTION:When focusing on electrons working as minority carriers in emitter to be implanted to an emitter region 2 from a base region 1, the electrons inflowing into the emitter in the vicinity of surface further inflows into an annular region 5 owing to a diffusion voltage between the annular region 5 and emitter region 2, but such diffusion voltage becomes a reverse voltage for electrons within this annular region 5, rejecting outflow of electrons to the emitter region 2. Accordingly, electrons in the annular region 5 are immediately saturated and electron current does not flow in the vicinity of base emitter surface.

5. 发明专利

JPS58100458A MANUFACTURE OF LATERAL BIPOLAR TRANSISTOR 失效
公开(公告)号：JPS58100458A
公开(公告)日：1983-06-15
申请号：JP19932781
申请日：1981-12-10
申请人： MATSUSHITA ELECTRONICS CORP
发明人： ITOU KOUJI
IPC分类号： H01L21/8222 , H01L21/331 , H01L27/06 , H01L29/73 , H01L29/735
摘要： PURPOSE:To obtain the transistor, hFE thereof is high and the quantity of noises generated therefrom is small, by deeply forming an emitter region and increasing effective impurity concentration. CONSTITUTION:An N Si layer 2 is shaped to one part of the suface of a P type Si susbstrate 1, and an N type Si semiconductor layer 3 is grown to the whole surface in an epitaxial manner. An emitter region 61 is formed at the same time as a P type region 4 in an isolation diffusion process, and a donor impurity is added and diffused from the surface of an N type island region 31 surrounded by the P type region 4 and an N type region 5 is shaped. An acceptor impurity is evaporated and diffused, and acceptor concentration in the vicinity of the surface of the emitter region 61 is increased while a P type collector region 62 is formed.

6. 发明专利

JPS5828784A GAS DISCHARGE TYPE DISPLAY 失效
公开(公告)号：JPS5828784A
公开(公告)日：1983-02-19
申请号：JP12759881
申请日：1981-08-13
申请人： MATSUSHITA ELECTRONICS CORP
发明人： SHIYOUJI MASAMI , AOYAMA TAKASHI , ITOU KOUJI , OKAMOTO TAKIO
IPC分类号： G09G3/28 , H01J17/49

7. 发明专利

JPS5222887A SEMICONDUCTOR UNIT MANUFACTURING SYSTEM 失效
公开(公告)号：JPS5222887A
公开(公告)日：1977-02-21
申请号：JP9923375
申请日：1975-08-14
申请人： MATSUSHITA ELECTRONICS CORP
发明人： HOSOI TAMIKAZU , ITOU KOUJI
IPC分类号： H01L29/73 , H01L21/22 , H01L21/331 , H01L29/04 , H01L29/08
摘要： PURPOSE:To get a bipolar transistor with increased current amplitude by forming a base zone along a emitter junction.

8. 发明专利

JPS60180043A DISCHARGE TUBE FOR DISPLAY 失效
公开(公告)号：JPS60180043A
公开(公告)日：1985-09-13
申请号：JP3644984
申请日：1984-02-27
申请人： MATSUSHITA ELECTRONICS CORP
发明人： ATSUMI TAMINORI , NAKAGAWA YOSHIO , OKAMOTO TAKIO , ITOU KOUJI
IPC分类号： H01J17/49
摘要： PURPOSE:To obtain a large perspective angle by forming a great number of thin cathodes in the inside of a surface plate for perspective and a great number of thin anodes perpendicular to them in the inside of a back plate, and further providing insulating layers in parts of the surfaces of the cathodes. CONSTITUTION:An envelope is formed by a back plate 1 and a surface plate 2 for perspective, and a great number of thin cathodes 7 arranged in the inside of the surface plate 2 in parallel are provided, in which parts of the surfaces opposing to anodes 8 are covered with insulating layers 9, and the anodes 8 perpendicular to the cathodes 7 are provided in the inside of the back plate 1 in a parallel direction, and further insulating bulkheads 10 for forming scanning spaces are provided along the anodes 8, and the a discharge tube for display is formed. And therefore only the portions in the region of both ends of the cathodes 7 are exploded to the side of the anodes 8 and it is possible to obtain a large perspective angle even if the high density is made in the electrode arrangement because the cathode glow is generated in the only exploded region in discharging, and further it is possible to enlarge the area of each electrode and to reduce the resistance value.

9. 发明专利

JPS6057390A DISCHARGE TUBE DRIVER FOR DISPLAY 失效
公开(公告)号：JPS6057390A
公开(公告)日：1985-04-03
申请号：JP16464183
申请日：1983-09-07
申请人： MATSUSHITA ELECTRONICS CORP
发明人： OKAMOTO TAKIO , ITOU KOUJI
IPC分类号： G09G3/282 , G09G3/20

10. 发明专利

JPS5674963A HORIZONTALLTYPE TRANSISTOR 失效
公开(公告)号：JPS5674963A
公开(公告)日：1981-06-20
申请号：JP15230679
申请日：1979-11-24
申请人： MATSUSHITA ELECTRONICS CORP
发明人： ITOU KOUJI
IPC分类号： H01L29/73 , H01L21/331 , H01L29/72
摘要： PURPOSE:To obtain a high-current amplification factor by forming an emitter area deeper than a collector area inside a base area and at the same time, providing the lower impurity concentration of a base area located between the emitter and collector areas than the impurity concentration of a base area under an emitter area. CONSTITUTION:A N type imbedded area 11 is diffused and formed on a P type silicon substrate 1 and a N type layer 3 is caused to epitaxially grow on the entire area including the area 11. Then a layer 3 is formed like an island by means of a P type insulative separation area and it is used as a base area for a horizontal-type PNP transistor. Next, inside the layer 3, an annular P type collector area 4 is diffused and formed, and in an area surrounded by the area 4, a P type emitter area 5 is provided, and is entirely covered by SiO2 film 10 with an opening provided. After these steps, electrodes 7, 9 are attached on the areas 4, 5 respectively. In addition, on the end of the layer 3, a N type area 12 for ohmic contact adjoining the area 11 is formed with an electrode 8 attached. Under this constitution, the area 5 is depened and its concentration is lessened more than that of the area 4. Further, the concentration of the area 3 between the areas 4, 5 is reduced compared with the concentration of the layer 3 right under the area 5.

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