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    • 3. 发明专利
    • MANUFACTURE OF LAMINATE-TYPE CERAMIC CHIP CAPACITOR
    • JPH02178910A
    • 1990-07-11
    • JP33335388
    • 1988-12-29
    • MATSUSHITA ELECTRIC IND CO LTDTODA KOGYO CORP
    • NAKAMURA HISASHIMATSUI TOSHIKI
    • H01G4/12H01G4/232H01G4/30
    • PURPOSE:To prevent deterioration of insulating property by sticking a catalyst of alkalescent noble metal superfine particle sol to a sintered capacitor element in the form of a separate piece so as to form an external electrode layer by an electroless plating method. CONSTITUTION:A ceramic sheet, which is made into a multilayer by printing an internal electrode layer 2 consisting of high melting point noble metal such as palladium platinum, etc., on the surface of a ceramic dielectric layer 1 and laminating these sheets, is cut in separate piece form, and then is fired so as to obtain a capacitor element in separate piece form. The catalyst 3 of palladium superfine particles is stuck to the entire surface, and is dipped in electroless nicked plating liquid so as to precipitate a conductive metallic layer 4 consisting of metallic nickel at the surface. And the conductive metallic layer 4 at the needless part is dissolved and removed so as to form an external electrode layer consisting of the conductive metallic layer 4. Since alkalescent noble metal superfine particle sol is used as a catalyst 3, the corrosion of the capacitor element by activating treatment process is prevented, and further since the catalyst 3 is of fine particles, the adhesive strength is strong. Hereby, an external electrode layer, which is free from deterioration of insulation and is excellent in adhesion, can be obtained.
    • 10. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPH01276750A
    • 1989-11-07
    • JP10638288
    • 1988-04-28
    • MATSUSHITA ELECTRIC IND CO LTD
    • NAKAMURA HISASHI
    • H01L21/60H01L23/12H01L23/28H01L23/50
    • PURPOSE:To improve the reliability for moisture-resistance, heat impact resistance, etc., by providing a projected bump layer on an electrode pad for external connection of a semiconductor chip, burying the chip in an insulating resin, and further arranging a projected bump layer for external connection on the upper surface of the resin. CONSTITUTION:An Al pad 8 for external connection of an Si chip 7 is arranged. A projected bump layer 9 is formed by stacking an Au thick film through a barrier layer such as Ti or Cr. Then, the chip is buried into a resin 10 by setting an epoxy resin having a filler such as silica mixed with either an acid anhydride-containing or amine-containing thermosetting agent. A molding surface is polished so that a part of the bump layer 9 is exposed from the resin 10. Then, a conductive paste is screen-printed to form a circuit conductive layer 11 and a bump layer 12. According to the constitution, not only the moisture resistance of the semiconductor device is adequately guaranteed but also the reliability against heat impact is proved when a soldering is made on a glass fabric base, epoxy resin printed wiring board by a face down method. A rigid support board such as a metal may be used on the rear of the semiconductor chip 7.