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1. 发明专利

JP2008034925A Film bulk acoustic resonator, filter, and fabrication method thereof 有权
标题翻译：电影大容量声学谐振器，滤波器及其制造方法
公开(公告)号：JP2008034925A
公开(公告)日：2008-02-14
申请号：JP2006203023
申请日：2006-07-26
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： UNO TAKASHI , TSURUMI NAOHIRO , HACHIMAN KAZUHIRO , SAKAI HIROYUKI
IPC分类号： H03H9/17 , H03H3/02
摘要： PROBLEM TO BE SOLVED: To provide a fabrication method of a film bulk acoustic resonator that makes it possible to form a piezoelectric film which is formed on a smooth surface and has good crystallinity.
SOLUTION: The film bulk acoustic resonator includes: a substrate 11; an acoustic reflector portion 14 formed on the substrate 11; and an acoustic resonator portion 18 stacked on the acoustic reflector portion 14. The acoustic resonator portion 18 includes a lower electrode 15, a piezoelectric film 16, and an upper electrode 17, which are sequentially stacked on the acoustic reflector portion 14. The acoustic reflector portion 14 includes a low acoustic impedance layer 13 comprising a material whose acoustic impedance value is lower than the acoustic impedance value of the lower electrode 15, and a layer of the acoustic reflector portion 14 in contact with the acoustic resonator portion 18 is a film formed by spin coating.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种膜体声波谐振器的制造方法，其可以形成形成在光滑表面上并且具有良好结晶度的压电膜。薄膜体声波谐振器包括：基板11; 形成在基板11上的声反射部14; 以及叠层在声反射器部分14上的声谐振器部分18.声谐振器部分18包括依次堆叠在声反射器部分14上的下电极15，压电薄膜16和上电极17。部分14包括低声阻抗层13，其包括声阻抗值低于下电极15的声阻抗值的材料，并且与声共振器部分18接触的声反射器部分14的层是成膜的通过旋涂。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007166148A Thin film acoustic resonator, filter, and its manufacturing method 审中-公开
标题翻译：薄膜声学谐振器，滤波器及其制造方法
公开(公告)号：JP2007166148A
公开(公告)日：2007-06-28
申请号：JP2005358864
申请日：2005-12-13
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： HACHIMAN KAZUHIRO , SAKAI HIROYUKI , TSURUMI NAOHIRO , UNO TAKASHI
IPC分类号： H03H9/17 , H01L41/09 , H01L41/187 , H01L41/22 , H01L41/253 , H03H3/02 , H03H9/02 , H03H9/58
摘要： PROBLEM TO BE SOLVED: To realize a thin film acoustic resonator in which a resonance frequency can be accurately and uniformly adjusted. SOLUTION: The thin film acoustic resonator is equipped with a piezoelectric film 11, and a first electrode 12 and a second electrode 13 which are formed confronting each other through the piezoelectric film 11. A resonance frequency adjusting film 14 which is formed of material 500 to 3,500 kg/m 3 in density is provided on the side of the first electrode 12 or the second electrode 13 opposite to its other side facing the piezoelectric film 11. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：实现其中可以精确和均匀地调节共振频率的薄膜声谐振器。解决方案：薄膜声谐振器配备有通过压电膜11相互形成的压电膜11和第一电极12和第二电极13。一种共振频率调节膜14，其由在与第一电极12或第二电极13相对的与压电膜11相对的另一侧的一侧上设置密度为500〜3500kg / m 3的密度的材料。版权所有（C））2007，JPO＆INPIT

3. 发明专利

JP2007043498A Thin film bulk sound resonator and its manufacturing method 有权
标题翻译：薄膜音箱谐振器及其制造方法
公开(公告)号：JP2007043498A
公开(公告)日：2007-02-15
申请号：JP2005225686
申请日：2005-08-03
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： UNO TAKASHI , TSURUMI NAOHIRO , HACHIMAN KAZUHIRO
IPC分类号： H03H3/02 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/313 , H01L41/335 , H01L41/337 , H01L41/39 , H03H9/17
摘要： PROBLEM TO BE SOLVED: To improve flatness of a surface of a piezoelectric material film after a semiconductor film for crystal growth substrate of the piezoelectric material film is eliminated and to obtain stable resonance property in a thin film bulk sound resonator. SOLUTION: The semiconductor film 2 and the piezoelectric material film 3 are sequentially formed on the crystal growth substrate 1 by crystal growth. In a state that a layered product in which a lower part electrode 4 is formed on the piezoelectric material film and a supporting substrate 6 are connected via joint of a first metal film 5 with a second metal film 8, a laser beam of wavelength which is absorbed not by the crystal growth substrate but by the semiconductor film is irradiated from a back face of the crystal growth substrate and the crystal growth substrate and the semiconductor film are separated from each other at least at a part of an interface between the crystal growth substrate and the crystal growth substrate. Then, the crystal growth substrate is eliminated and a surface of the semiconductor film from which the crystal growth substrate has been eliminated is flattened by CMP (chemical mechanical polishing). Moreover, after the semiconductor film is eliminated by dry etching, the upper part electrode is formed on the piezoelectric substance film from which the semiconductor film has been eliminated. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：为了提高在压电材料膜的晶体生长用基板的半导体膜被消除之后，为了提高压电材料膜的表面的平坦度，并且在薄膜体声共振器中获得稳定的共振性能。解决方案：通过晶体生长，半导体膜2和压电材料膜3依次形成在晶体生长衬底1上。在压电材料膜上形成下部电极4的层叠体和支撑基板6通过第一金属膜5与第二金属膜8的接合而连接的状态下，至少在晶体生长衬底之间的界面的至少一部分处，从晶体生长衬底的不吸收而不是由晶体生长衬底吸收的半导体膜被从晶体生长衬底的背面照射并且晶体生长衬底和半导体膜彼此分离，和晶体生长衬底。然后，消除晶体生长衬底，并且通过CMP（化学机械抛光）使已经消除了晶体生长衬底的半导体膜的表面变平。此外，在通过干蚀刻消除半导体膜之后，上部电极形成在已经从其去除了半导体膜的压电体膜上。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006148402A Manufacturing method of resonator 审中-公开
标题翻译：谐振器的制造方法
公开(公告)号：JP2006148402A
公开(公告)日：2006-06-08
申请号：JP2004334144
申请日：2004-11-18
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TSURUMI NAOHIRO , UNO TAKASHI , UEMOTO YASUHIRO , TANAKA TAKESHI
IPC分类号： H03H9/17 , H01L41/09 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/313 , H01L41/316 , H03H3/02
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of manufacturing a resonator for realizing a "broadband Δf (a difference between the resonance frequency and the anti-resonance frequency of the resonator)" and a "high Q value". SOLUTION: A film of a piezoelectric layer is formed by the MOCVD method on a sacrificing piezoelectric layer formed by the PVD method. The film formed sacrificing piezoelectric layer formed by the PVD method is not affected by the lattice matching performance with a base film unlike the MOCVD method and has a high C axis orientation. Thus, the excellent piezoelectric layer can be obtained with high crystalinity without cracks because of the lattice matching by forming the film of the piezoelectric layer by the MOCVD method on the sacrificing piezoelectric layer film-formed by the PVD method. Thereafter the sacrificing piezoelectric layer film-formed by the PVD method is removed by a developing solution to use only the piezoelectric layer with high quality for the resonator. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于实现“宽带Δf（谐振频率与谐振器的反谐振频率之间的差”）和“高Q值”的谐振器的制造方法。解决方案：通过MOCVD方法在通过PVD方法形成的牺牲压电层上形成压电层的膜。通过PVD法形成的牺牲压电层的成膜不受MOCVD法的影响，不受基膜的晶格匹配性能的影响，C轴取向较高。因此，通过在通过PVD法形成的牺牲压电层上通过MOCVD方法形成压电层的膜的晶格匹配，可以获得具有高结晶度而没有裂纹的优异的压电层。此后，通过PVD方法膜形成的牺牲压电层通过显影液除去，以仅使用用于谐振器的高质量的压电层。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2000023459A POWER SUPPLY UNIT 失效
公开(公告)号：JP2000023459A
公开(公告)日：2000-01-21
申请号：JP19143098
申请日：1998-07-07
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： UEJIMA TAKAHITO , OKUDA HIDENORI , OKUDA ISAMU , MASUZAWA TOSHIICHI , UNO TAKASHI
IPC分类号： H02M3/28 , H02M3/335
摘要： PROBLEM TO BE SOLVED: To provide a power supply unit wherein its consumption power is reduced when an electric appliance is in a standby state. SOLUTION: In a power supply unit for feeding predetermined voltages to an air conditioner having a control circuit 16 whose operations are controlled by the control circuit 16, there are provided a DC/DC converter 15 for outputting a steady voltage V1 and a variable voltage V2, and a regulator 17 for stabilizing the stationary voltage V1 fed from the DC/DC converter 15 to settle it in a predetermined voltage and for feeding the stabilized voltage to the control circuit 16 of the air conditioner. Determining whether the air conditioner is in its standby state or not, the DC/DC converter 15 makes lower when the air conditioner is in its standby state the value of the steady voltage V1 to be outputted to the regulator 17 than the value thereof when the air conditioner is in its operating state.

6. 发明专利

JPH11308863A SWITCHING POWER SUPPLY 失效
公开(公告)号：JPH11308863A
公开(公告)日：1999-11-05
申请号：JP11313998
申请日：1998-04-23
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MORITA KAZUKI , UNO TAKASHI
IPC分类号： H02M3/338
摘要： PROBLEM TO BE SOLVED: To produce a highly efficient, compact and low-cost switching power supply by optimizing the switching timing of a switching element in a switching power supply to be used in various kinds of electronic devices. SOLUTION: A voltage which is produced in a bias winding 1c is caused to delay with a time constant circuit, comprising a resistor 5 and a capacitor 13 by half the time of the resonance frequency generated with the primary windings of a transformer 1 and a snubber capacitor 7. Furthermore, the effect caused by the dispersion of the threshold for a switching element 2 is minimized, by adding a constant-voltage element 14 via a capacitor 6 placed at the post- stage in the circuit.

7. 发明专利

JP2537816B2 失效
公开(公告)号：JP2537816B2
公开(公告)日：1996-09-25
申请号：JP24869186
申请日：1986-10-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NAKANE SHINICHI , UNO TAKASHI , IWABUCHI HIROO , UBUKAWA TOYOMIZU , ASANO KAZUTAKA
IPC分类号： H04M11/00

8. 发明专利

JPH074033B2 失效
公开(公告)号：JPH074033B2
公开(公告)日：1995-01-18
申请号：JP12866386
申请日：1986-06-03
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NAKANE SHINICHI , UNO TAKASHI , ASANO KAZUTAKA , UBUKAWA TOYOMIZU
IPC分类号： H04Q9/00

9. 发明专利

JPH05300738A 失效
公开(公告)号：JPH05300738A
公开(公告)日：1993-11-12
申请号：JP9923092
申请日：1992-04-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： UNO TAKASHI
IPC分类号： G05F1/10 , H02M3/28
摘要： PURPOSE:To obtain the DC power supply apparatus of small size and high reliability, in which each output voltage can be controlled without requiring an element increasing a loss and the whole heat generation is reduced, in a DC power supply apparatus used as the power supply of various electronic equipments. CONSTITUTION:The series circuit of a switching element 22 and the primary winding N1 of a transformer 23 is connected with a DC power supply 21, a master output circuit composed of the rectifier and smoothing circuit of a diode 24 and capacitor 25 is connected with the secondary winding N2 of the transformer 23, and one or more auxiliary output circuits each composed of a rectifier and smoothing circuit for switching a diode 26, capacitor 27 and switching element 30 by the charge and discharge of a charge and discharge capacitor 39 are connected with the secondary winding or other winding N3. Further, when the title apparatus is constituted so that the switching element 22 on the primary side is controlled by a voltage detection circuit composed of the reference voltage source 31 and error amplifier 32 of the master output circuit, it is possible to control the voltage across the loads 35 and 36.

10. 发明专利

JPH04265824A FLOWMETER 失效
公开(公告)号：JPH04265824A
公开(公告)日：1992-09-22
申请号：JP2712591
申请日：1991-02-21
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HORIIKE YOSHIO , MURAKAMI HIROKUNI , UNO TAKASHI
IPC分类号： G01F3/22 , G01F15/06
摘要： PURPOSE:To obtain a gas meter which can also integrate and display the flow rate of each gas appliance by making a gas meter which integrates and displays the total flow rate of all the appliances display the integrated value of the flow rate of each appliance. CONSTITUTION:This flowmeter comprises a measuring means 3 for measuring the flow rate of gas, an integrating means 4 for integrating the measured flow rates of the measuring means 3, a receiving means 17 for receiving the integrated value measured and integrated by the other gas meter 24, a memory means 14 for storing the received integrated value of the receiving means 17, and a display means 13 for displaying the integrated value of the integrating means 4 or the value of the memory means 14. Accordingly, the integrated value can be displayed for each gas appliance.

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