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1. 发明专利

JPH0481848B2 失效
公开(公告)号：JPH0481848B2
公开(公告)日：1992-12-25
申请号：JP3656784
申请日：1984-02-27
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： IIJIMA KENJI , KAWASHIMA SHUNICHIRO , UEDA ICHIRO
IPC分类号： G02F1/01 , G11B7/125 , H01G7/00 , H01G7/06 , H01L41/08 , H03H9/17

2. 发明专利

JPH04206876A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04206876A
公开(公告)日：1992-07-28
申请号：JP33797790
申请日：1990-11-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： IIJIMA KENJI , UEDA ICHIRO , KUGIMIYA KOICHI
IPC分类号： H01L41/08 , H01L21/8246 , H01L27/105 , H01L29/78 , H01L29/786
摘要： PURPOSE:To give the function of a memory, which is superior in characteristics, to the upper part of a low-cost glass substrate or the like by a method wherein a semiconductor device is at least provided with an electrode formed by patterning on the insulative substrate, a ferroelectric thin film formed by patterning on the insulative substrate including the electrode and a semiconductor thin film formed on the ferroelectric thin film. CONSTITUTION:A Corning glass is used as a glass substrate 11, a Pt electrode is formed thereon as a gate electrode 12 by a sputtering method and a striped pattern is formed by etching. Then, a PbZr0.8Ti0.2O3 film is formed thereon as a ferroelectric thin film 13 by a sputtering method and thereafter, an amorphous silicon film is deposited as a semiconductor thin film 14 by a plasma CVD method. After that, the film 14 is formed by patterning by a normal photolithography technique and a normal dry etching method, a high-concentration treatment is performed on source and drain regions 15 and 16 and after that, Al electrodes are deposited as source and drain electrodes 17 and 18 and a thin film transistor is formed.

3. 发明专利

JPH04206870A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04206870A
公开(公告)日：1992-07-28
申请号：JP33797590
申请日：1990-11-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： IIJIMA KENJI , UEDA ICHIRO , KUGIMIYA KOICHI
IPC分类号： H01L41/08 , H01L21/314 , H01L21/8246 , H01L27/105 , H01L27/112
摘要： PURPOSE:To improve the crystallizability and ferroelectric characteristics of a semiconductor device by a method wherein an oxide layer is made to interpose between at least one electrode of upper and lower electrodes and a ferroelectric film. CONSTITUTION:A capacitor lower electrode 8, which is a platinum (Pt) thin film electrode of a film thickness of 100nm, is formed by a sputtering method and thereafter, an oxide layer 9 of a film thickness of 50nm is similarly formed by a sputtering method. The layer 9 has a perovskite structure. In addition, the layer 9 may be a layer containing at least one of lead, titanium and lanthanum as its main component, a layer containing an alkali metal and the like and titanium as its main components, a layer containing barium and titanium as its main components or a layer containing strontium and titanium as its main components. The interposition place of the oxide layer may be provided between an upper electrode and a ferroelectric film.

4. 发明专利

JPH04206869A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04206869A
公开(公告)日：1992-07-28
申请号：JP33797490
申请日：1990-11-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： IIJIMA KENJI , UEDA ICHIRO , KUGIMIYA KOICHI
IPC分类号： H01L29/43 , H01L21/28 , H01L21/8246 , H01L27/112 , H01L41/08
摘要： PURPOSE:To improve the crystallizability, electrical characteristics and repeat characteristics of a semiconductor device by a method wherein conductive oxide films containing the electrode transition metal film on at least one side of electrode transition metal films holding a ferroelectric film between them as one of their main components are used. CONSTITUTION:A tungsten silicide electrode 8 is formed as a source electrode and after an interlayer insulating film 9 is formed, opening parts are formed in the film 9 by etching, a conductive oxide film 7 is made to expose and thereafter, a PbZr0.8Ti0.2O3 film of a film thickness of 100nm is formed by an RF magnetron sputtering device as a ferroelectric film 10. After that, a conductive oxide film 11, which has a film thickness of 100nm and has the same composition as that of the film 9, is formed by an RF magnetron sputtering device as a wiring layer. Such units are formed on an Si wafer by 1000 pieces, a drive circuit is formed on the peripheral part of the wafer and a semiconductor device is formed. The electric resistances of the films 7 and 11 at room temperatures are both 10muOMEGA.cm or thereabouts and are almost equal with that of a Pt metallic electrode.

5. 发明专利

JPH04159679A FERROELECTRIC BODY THIN-FILM ELEMENT 失效
公开(公告)号：JPH04159679A
公开(公告)日：1992-06-02
申请号：JP28563490
申请日：1990-10-22
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： IIJIMA KENJI , KUGIMIYA KOICHI , UEDA ICHIRO
IPC分类号： G11C11/22
摘要： PURPOSE:To enable life of an element to be improved with a simple configuration by providing a difference between upper and lower electrode areas or slanting a ferroelectric body film end face. CONSTITUTION:A single crystal Si where SiO2 is allowed to grow on a surface is used as a substrate 1 and a lower electrode 2, a ferroelectric body film (PbZr8.5Ti8.2O3 are used) 3, an upper electrode 4, an insulation layer 5, and a take-out electrode 6 are provided on it. An upper part of the upper electrode 4 is made smaller than the lower electrode 2, thus preventing crack or release of an insulation layer 5 from occurring. Or, the similar effect can be obtained by slanting an end face of the ferroelectric body film 3.

6. 发明专利

JPH0195411A MANUFACTURE OF SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPH0195411A
公开(公告)日：1989-04-13
申请号：JP25103287
申请日：1987-10-05
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： UEDA ICHIRO
IPC分类号： C01G3/00 , C01G1/00 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To orient the (001) axis in perpendicular to a substrate by forming a thin film of Y2O3-BaO-CuO oxide on a strontium titanate monocrystal substrate cut out in parallel with the (100) plane and then subjecting the film to heat treatment at a relatively high temperature. CONSTITUTION:As a substrate, a strontium titanate monocrystal (SrTiO3) cut out in parallel to the (100) plane is used and a superconducting film of a Y2O3- BaO-CuO system is formed thereon via a sputter method. Then, the film is subjected to heat treatment at 800 deg.C to 1,000 deg.C and oriented to the (001) perpendicular to the substrate. According to the aforesaid process, a superconducting thin film of low resistibility and oriented toward the (001) in parallel to the crystal plane and in perpendicular to the substrate can be formed on the strontium titanate (SrTiO3) monocrystal.

7. 发明专利

JPH0194683A MANUFACTURE OF SEMICONDUCTOR THIN FILM 失效
公开(公告)号：JPH0194683A
公开(公告)日：1989-04-13
申请号：JP25214487
申请日：1987-10-06
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： UEDA ICHIRO
IPC分类号： C23C14/34 , C23C14/08 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To orient the axis of (100) or (010) in parallel to a substrate by using MgO which has been split on the (100) plane as a substrate, and coating by a sputtering method a Y2O3-BaO-CuO superconductor under such conditions where argon/oxygen, gas pressure, and substrate temperature are specified within a certain range, respectively. CONSTITUTION:A crystal direction whose electric resistance is small is oriented in parallel to a substrate by forming, by means of sputtering, a Y2O3-BaO-CuO oxide thin film on a magnesia single crystal substrate which has been split on the (100) plane, under such conditions as argon/oxygen being 95/5-50/50, a gas pressure being 40mT-200mT, and a substrate temperature being 650-800 deg.C. For example, after orienting, blending, mixing, and baking a predetermined quantity of materials such as Y2O3, BaCO3, CuO at 900 deg.C for 12 hours in the atmosphere, using a target whose composition is YBa2Cu3O7-delta pressed at a pressure of 200kg/cm , a thin film is obtained under conditions similar to said conditions by an FR-magnetron sputtering method.

8. 发明专利

JPS6435819A MANUFACTURE OF SUPERCONDUCTING MEMBRANE 失效
公开(公告)号：JPS6435819A
公开(公告)日：1989-02-06
申请号：JP19294387
申请日：1987-07-31
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： UEDA ICHIRO
IPC分类号： H01B12/06 , C01G1/00 , C04B41/87 , C23C14/08 , C30B29/22 , H01B13/00 , H01L39/12
摘要： PURPOSE:To make an extremely uniform and isotropic membrane by forming the membrane of T2O3-BaO-CuO system oxide on an alumina ceramic substrate under each specific condition of a membrane formation rate and gas pressure. CONSTITUTION:Polycrystalline alumina ceramics are used as a substrate. And a membrane of Y2O3-BaO-CuO system oxide is formed in the condition where gas pressure is taken at 40mT or more and a membrane formation rate at 50 A.min. or more. According to the aforesaid system, the membrane is not oriented in a special direction and it is possible to distribute axes uniformly.

9. 发明专利

JPS6356695B2 失效
公开(公告)号：JPS6356695B2
公开(公告)日：1988-11-09
申请号：JP9358381
申请日：1981-06-16
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： UEDA ICHIRO , NISHIDA MASAMITSU , OOCHI HIROSHI
IPC分类号： G01K7/00 , G01J5/02 , G01J5/34 , G01K7/34 , H01G7/04

10. 发明专利

JPS6241311B2 失效
公开(公告)号：JPS6241311B2
公开(公告)日：1987-09-02
申请号：JP23271682
申请日：1982-12-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OOCHI HIROSHI , IIJIMA KENJI , KAWASHIMA SHUNICHIRO , UEDA ICHIRO
IPC分类号： C01G23/00 , C23C14/08 , C23C14/44 , G02B6/13 , G02F1/03 , G02F1/05 , H01B3/00

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