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1. 发明专利

JP2004264102A Method of measuring sem shrink amount, and distance measurement sem system 审中-公开
公开(公告)号：JP2004264102A
公开(公告)日：2004-09-24
申请号：JP2003053236
申请日：2003-02-28
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MATSUOKA KOJI
IPC分类号： G01B15/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method of measuring a SEM shrink amount and a SEM distance measurement system capable of measuring the precise SEM shrink amount even though a base film is a film tends to accumulate charges.
SOLUTION: The method of measuring the SEM shrink amount for measuring the SEM shrink amount for a plurality of times while irradiating a resist pattern with an electron beam using a distance measurement SEM system, comprises: a step 11 for measurement of a pitch of the resist patter having a specific pitch; a step 12 for calculating a variation amount of distance measurement magnification depending on the irradiation time of the electron beam based on the result of the measurement of the resist pattern pitch; a step 13 for measurement of the resist pattern pitch; and a step 14 for correction of the results of the the measurement of the resist pattern pitch by using the variation amount of the distance measurement magnification.
COPYRIGHT: (C)2004,JPO&NCIPI

2. 发明专利

JP2002323746A PHASE SHIFT MASK AND HOLE PATTERN FORMING METHOD USING THE SAME 失效
公开(公告)号：JP2002323746A
公开(公告)日：2002-11-08
申请号：JP2001126310
申请日：2001-04-24
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MATSUOKA KOJI , KATSUYAMA AKIKO , KOIZUMI TAICHI
IPC分类号： G03F1/29 , G03F1/32 , G03F1/36 , G03F1/68 , G03F7/20 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To prevent the deterioration in depth of focus(DOF) as some of the layouts of fine hole patterns make the arrangement of auxiliary patterns infeasible in forming the fine hole patterns by using a photoresist and a mask arranged with the auxiliary patterns. SOLUTION: The fine hole patterns are formed by using the mask arranged with the negative resist and the auxiliary patterns. The fine hole patterns which are high in the depth of focus(DOF) of both of the isolated and dense patterns are formed.

3. 发明专利

JPH09148224A ALIGNER AND PATTERN FORMING METHOD 失效
公开(公告)号：JPH09148224A
公开(公告)日：1997-06-06
申请号：JP30543695
申请日：1995-11-24
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MATSUOKA KOJI
IPC分类号： G03F7/207 , G03F9/02 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To beforehand recognize a chip or an exposure area being a fail pattern or prevent the fail pattern by a method wherein there is a function of measuring beforehand a projection and a recess and an inclination of the exposure area, and of calculating the maximum focus error which cannot be corrected when corrected in a stage. SOLUTION: An inclination and a projection and a recess of an exposure area are measured first by sensors 3, 4 before a wafer 1 is exposed to light. Next, an inclination amount of the stage and a focus position are calculated by a calculation part 5 based on the data so that a focus error of the exposure area is minimized. Further, a value and a position of the maximum focus error left when adjusted are calculated. Next, when the maximum focus error exceeds a specific permissible value (0.5μm), and alarm is raised by a buzzer. Further, when not exceeded, the inclination amount of the stage and a value of the focus position are supplied to a stage control part 6, and after an inclination and a height position of a stage 2 are actually adjusted, a pattern is exposed to light through a projection lens 9.

4. 发明专利

JPH09115805A FORMATION OF PATTERN 失效
公开(公告)号：JPH09115805A
公开(公告)日：1997-05-02
申请号：JP26967495
申请日：1995-10-18
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MATSUOKA KOJI
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To reduce the optical proximity effect of line system pattern in the process for forming a gate by setting the coherent factor, indicative of the coherency of light in the illumination system of aligner, within a specified range. SOLUTION: A light 6 emitted from an illumination system 1 is collimated through a condenser lens 2 before illuminating a mask 3. The light 6 transmitted through the mask 3 is passed through a projection lens 4 and focused on a water 5. Since the coherent factor of illumination system 1 is set in the range of 0.70-0.80, the outermost light illuminates the mask 3 at a lower angle (ϕ1) as compared with common illumination (σ=0.60) and the mask 3 is illuminated over a wide angular range as a whole. Consequently, contrast of pattern is enhanced and and the range of line width is confined within 0.026μm thus suppressing fluctuation of line width due to optical proximity effect.

5. 发明专利

JPH08264408A PATTERN FORMING METHOD 失效
公开(公告)号：JPH08264408A
公开(公告)日：1996-10-11
申请号：JP6075195
申请日：1995-03-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MATSUOKA KOJI
IPC分类号： G03F7/30 , H01L21/027
摘要： PURPOSE: To obtain stable line width control by a method wherein a dedicated area for detecting a resist development termination is provided on a wafer and light is projected to the dedicated area and reflected light from the resist and the wafer is detected to observe the development state of the resist, so that the data are fed back. CONSTITUTION: An exposed wafer 3 enters a processor 4 and a developing solution is dripped on the wafer 3. Simultaneously, light is projected from a light-casting part 1 to development termination detection pattern 3A located near the orientation flat of the wafer 3. Resist in an exposed area of the development termination detection pattern 3A is dissolved and the film thickness is gradually decreased, therefore the strength of light according to the variation of the resist film thickness is observed in a light-receiving part 2. A control unit 5 judges the time point when the amplitude is not observed from the waveform of the light strength, and computes the period after developing liquid is applied onto the wafer 3 until reaching the substrate. An instruction of the development termination period is sent to the processor 4 based on the obtained period.

6. 发明专利

JPH0253058A PATTERN FORMING METHOD 失效
公开(公告)号：JPH0253058A
公开(公告)日：1990-02-22
申请号：JP20514388
申请日：1988-08-18
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MATSUOKA KOJI , ENDO MASATAKA , SASAKO MASARU , HIRAI YOSHIHIKO
IPC分类号： G03F7/11 , H01L21/027
摘要： PURPOSE:To improve the dimensional accuracy of a resist film by exposing the resist film mounted on a specified org. material, developing and then etching it to form a pattern composed of two layer films of an org. substance and the resist film. CONSTITUTION:The resist 2' for the antireflection of a substrate is composed of an org. substance which does not contain a benzene ring and is poor in antiplasma etching property. And, the positive resist (MPS 1400) 3 is applied on the resist 2' and exposed through a chrom mask 4 with UV rays 5. Next, the positive resist is only developed with a developer, and then etched using the positive resist 3 as a mask in an atmosphere of a CF4 type gas. Accordingly, the pattern which has a vertical cross section and is not affected by reflection, is formed. Thus, a stable resist pattern in spite of the reflection and the gradation of the substrate is formed.

7. 发明专利

JP2002287324A MASK AND METHOD FOR FORMING HOLE PATTERN BY USING THE MASK 失效
公开(公告)号：JP2002287324A
公开(公告)日：2002-10-03
申请号：JP2001089440
申请日：2001-03-27
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MATSUOKA KOJI
IPC分类号： G03F1/32 , G03F1/54 , G03F1/68 , G03F1/70 , G03F7/20 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To form a densely arranged hole pattern having a hole pitch smaller than the resolution limit with an isolated hole pattern while preventing decrease in the throughput or degradation in the dimensional accuracy. SOLUTION: A plurality of holes arranged along the x-direction and the y-direction in the densely arranged hole pattern are divided into a first group and a second group in such a manner that the pitches in the respective directions of the holes in each group are controlled to P2x and P2y which are equal to twice of the minimum pitches P1x and P1y in the respective directions. First and second halftone phase shifting masks 10, 20 having light transmitting parts 12, 22 for holes corresponding to the above holes of the respective groups are used to expose one resist film twice for patterning. Barrier enhancing parts 13, 23 are formed in the first and second halftone phase shifting masks 10, 20, respectively, in the region corresponding to the light transmitting part of the other mask.

8. 发明专利

JP2002252165A HOLE PATTERN FORMING METHOD 失效
公开(公告)号：JP2002252165A
公开(公告)日：2002-09-06
申请号：JP2001052132
申请日：2001-02-27
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MATSUOKA KOJI , KATSUYAMA AKIKO , KOIZUMI TAICHI
IPC分类号： G03F1/32 , G03F1/68 , G03F1/70 , G03F7/20 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To improve throughput and dimensional precision, in the case of forming a resist pattern in which isolated hole patterns and dense hole patterns coexist and the hole pitches of the dense hole patterns are minute. SOLUTION: The first pattern exposure is performed to a resist film, consisting of negative type resist material by using the first photomask A, having a first hole light-shielding part 1 for forming the first hole patterns to be arranged sparsely, a second dummy light-shielding part 2 arranged in the periphery of the part 1 and a second hole light-shielding part 3 for forming the second hole patterns to be arranged densely. The second pattern exposure is performed to the resist film, given the first pattern exposure by using the second photomask B1 having an aperture part 4 equal to or larger than the part 2, at a position corresponding to the part 2. The resist pattern, given the first pattern exposure and the second pattern exposure, is developed to form the resist pattern.

9. 发明专利

JPH1041213A PATTERN FORMING METHOD 失效
公开(公告)号：JPH1041213A
公开(公告)日：1998-02-13
申请号：JP19426596
申请日：1996-07-24
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ENDO MASATAKA , KATSUYAMA AKIKO , MATSUOKA KOJI , MATSUO TAKAHIRO
IPC分类号： G03F7/039 , G03F7/09 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method which can form a chemical amplification type resist pattern excellent in resolution and configuration, even on a substrate showing different hydrophobic natures. SOLUTION: Hydrophobic nature on a substrate 1 is previously obtained by measuring, e.g. contact angles. On the basis of the measured results, the treatment condition of adhesive 7 is set, and adhesive treatment is performed. After resist 3 is formed, a desired mask 4 is used and selective exposure is performed by KrF excimer laser 5. After heating 6, a resist pattern 3A is formed by alkali development of the resist 3. By this method, a resist pattern excellent in resolution and configuration can be realized, and contributes to device manufacturing excellent in industrial yield.

10. 发明专利

JPH04275451A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04275451A
公开(公告)日：1992-10-01
申请号：JP3723991
申请日：1991-03-04
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： IMAI SHINICHI , YABU TOSHIKI , MATSUOKA KOJI
IPC分类号： H01L21/76 , H01L21/8238 , H01L27/092
摘要： PURPOSE:To prevent the peeling of a photoresist film on a silicon nitride film by a double resist method. CONSTITUTION:A silicon substrate 11 having an N-type region 12 and a P-type region 13 is overlaid with a silicon oxide film 14 and a silicon nitride film 15 one after the other, and the silicon nitride film 15 is made rugged. This is overlaid with a first photoresist film 16, which is used as an etching mask to selectively remove silicon nitride film 15, resulting in a selective oxide mask of an insular silicon nitride film. The first photoresist film 16 is not ashed, but left as it is and used as a channel stop ion implantation mask for element isolation. A second resist film 17 which coats the whole face of either the N-type or P-type region is overlaid to prevent implantation of channel stop ions. The area of contact of the silicon nitride film 15 with the first photoresist film 16 increases; therefore, the resist film 16 overlaying the silicon nitride film 15 is prevented from peeling off.

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