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1. 发明专利

JP2001021910A CONDUCTIVE VIA-HOLE AND MANUFACTURING METHOD THEREFOR 失效
公开(公告)号：JP2001021910A
公开(公告)日：2001-01-26
申请号：JP19205599
申请日：1999-07-06
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YAMAZOE HIROSHI , WAKITA HISAHIDE , KARASAWA TAKESHI , YAMANAKA YASUHIKO , KAWAGURI MARIKO
IPC分类号： H04N5/66 , G02F1/1345 , H05K3/46
摘要： PROBLEM TO BE SOLVED: To reduce a connection resistance value by leaps and bounds, while suppressing impacts to a film to a minimum, even when a very thin organic film I is used as a holding film, by comprising a hole-like structure for physically coupling two conductive layers, and carbon base particle group layers on the inner faces. SOLUTION: A liquid crystal layer 13 is arranged between a lower ITO electrode layer 8 on the surface of a lower substrate 7 and an upper film layer 10. Moreover, a via-hole 9a, and a support pole 9 for supporting the upper film layer 10 are formed in the central part on a lower substrate 7. And, carbon base particle group layer 11 is formed on the sidewall of the via-hole 9a, and an upper ITO electrode layer 12 is formed on the surfaces of the carbon base particle layer 11 and the upper film layer 10. Thus, the presence of the carbon base particle group layer 11 on the inner surface of the hole-like structure can surely prevent a contact resistance from becoming approximately several tens of kilo to several meg ohms, or almost insulated in some instances, and the conductive via-hole 9a can be reduced in the contact resistance.

2. 发明专利

JP2000269646A RESIN FILM STRUCTURE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000269646A
公开(公告)日：2000-09-29
申请号：JP7136999
申请日：1999-03-17
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YAMANAKA YASUHIKO , WAKITA HISAHIDE , KAWAGURI MARIKO , KARASAWA TAKESHI , YAMAZOE HIROSHI
IPC分类号： G09F9/30 , G02F1/1343 , H05K1/11 , H05K3/46
摘要： PROBLEM TO BE SOLVED: To provide a resin film structure wherein a contact hole forming process is simplified to obtain a sure conduction of electrodes with conductive members. SOLUTION: In contact holes 12, a resin film 2 expands inwardly over the diameter of the hole 12, and the contact holes 12 are different in diameter at an upper and lower resin films 2, 3, sandwiching pixel electrodes 9. The pixel electrodes 9 are formed also at the expanded portions of the resin film 2 in the contact holes and exposed at the contact holes 12, and the exposed portions of the electrodes 9 conductively continue connecting ends 22a of pixel switching elements 22 via conductive members 14.

3. 发明专利

JP2000162574A LIQUID CRYSTAL DISPLAY ELEMENT AND LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JP2000162574A
公开(公告)日：2000-06-16
申请号：JP33524198
申请日：1998-11-26
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： WAKITA HISAHIDE , KAWAGURI MARIKO , YAMANAKA YASUHIKO , KARASAWA TAKESHI , YAMAZOE HIROSHI
IPC分类号： G02F1/137 , G02F1/133
摘要： PROBLEM TO BE SOLVED: To provide a GH mode liquid crystal display element which is able to be driven with a low voltage and has high contrast. SOLUTION: To a liquid crystal layer 20 having hybrid alignment, formed by providing a high pretilt alignment layer 5 which makes a liquid crystal 7a align in a direction almost normal to a first substrate 1 and a homogeneous alignment layer 6 which makes a liquid crystal 7b align in parallel to a second substrate 2, furthermore a chiral dopant is added so as to form the alignment of the liquid crystals 7... as a twisted structure. Thereby a GH mode liquid crystal display element is obtained which can be driven with a low driving voltage and yet can display with high contrast.

4. 发明专利

JPH11326938A LIQUID CRYSTAL DISPLAY DEVICE AND ITS PRODUCTION 失效
公开(公告)号：JPH11326938A
公开(公告)日：1999-11-26
申请号：JP13831798
申请日：1998-05-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： WAKITA HISAHIDE , YAMANAKA YASUHIKO , KAWAGURI MARIKO , KARASAWA TAKESHI , YAMAZOE HIROSHI
IPC分类号： G02F1/1345 , G02F1/1347 , G02F1/136 , G02F1/1368
摘要： PROBLEM TO BE SOLVED: To improve a yield and to reduce a production cost. SOLUTION: This liquid crystal display device is constituted by connecting a display section 3 having first to third liquid crystal layers 26 to 28 into which guest-host liquid crystals contg. cyan, magenta or yellow dichroic dyestuffs are respectively contained and an array substrate 1 having TFTs(thin-film transistors) 12 to 14 by an anisotropically conductive adhesive material 2. As a result, even if display defects are found in the first to third liquid crystal layers 26 to 28, etc., there is no need for discarding even the array substrate 1 formed with the TFTs 12 to 14.

5. 发明专利

JPH10221515A THREE-DIMENSIONAL ARTIFICIAL GRATING STRUCTURE ELEMENT AND ITS PREPARATION 失效
公开(公告)号：JPH10221515A
公开(公告)日：1998-08-21
申请号：JP2491197
申请日：1997-02-07
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KARASAWA TAKESHI , TAKETOMI YOSHINAO
IPC分类号： G02B5/18 , C08F290/06 , G02B5/30
摘要： PROBLEM TO BE SOLVED: To provide a three-dimensional artificial grating structure of a micron scale formed vertically or at some angle relative to a base plate by providing a repeated structure of a plurality of regions having different refraction indexes respectively and existing a part, whose light scattering power has a polarization plane dependency in a kind of region. SOLUTION: A repeated structure of a plurality of regions is provided, the plurality of regions have different refraction indexes respectively, the light diffraction is generated by difference in the refraction indexes, and a part whose light scattering power has a polarization plane dependency is made to exist in a kind of region in the plurality of regions. A diffraction grating composed of the repeated structure of the regions having different refraction indexes emits the light from the advancing direction of an incident light in a specific- angle direction. This function only provides no selectivity to the light polarization direction, however, introduction of a polarization plane selectivity to one region can priorly provide a diffracted light with a specific polarization.

6. 发明专利

JPH09251148A DISPLAY DEVICE AND ITS PRODUCTION 失效
公开(公告)号：JPH09251148A
公开(公告)日：1997-09-22
申请号：JP5901296
申请日：1996-03-15
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TAKETOMI YOSHINAO , KARASAWA TAKESHI , ASAKAWA SHIRO , OKUDA EIICHIRO , OKAUCHI TORU
IPC分类号： G02F1/13 , G02F1/1333 , G03H1/04
摘要： PROBLEM TO BE SOLVED: To embody a direct viewing type scattering display device which is transparent in a display section and enables color display and has high luminance. SOLUTION: The light emitted by a cold cathode fluorescent tube 4 is directly or is reflected by a reflection mirror 5 and is made incident on a transparent substrate 2. The ray B1 of a wavelength λ propagating the inside of this transparent substrate 2 at an angle θ1 shown by a broken line in Fig. is reflected totally at the boundary between the front surface of the transparent substrate and the transparent layer 3 having the refractive index lower than the refractive index of the transparent substrate 2 in a region L. The ray is continuously propagated to a region U where a hologram H0 comes into tight contact directly with the transparent substrate 2 where the ray is diffracted by the hologram H0 and is made into illumination light I1. The illumination light I1 is made incident on the scattering pixel P1 of a dispersion type liquid crystal display device 1 and is made into scattered display light S1. This light arrives at the eyes of an observer 6.

7. 发明专利

JP2563530B2 失效
公开(公告)号：JP2563530B2
公开(公告)日：1996-12-11
申请号：JP26840588
申请日：1988-10-25
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KARASAWA TAKESHI , OOKAWA KAZUHIRO , MITSUYU TSUNEO
IPC分类号： C30B23/08 , C30B29/48 , C30B29/68 , H01L21/203 , H01L21/36 , H01L29/221 , H01S5/00 , H01S3/18

8. 发明专利

JPH03160734A MANUFACTURE OF ARSENIC ADDED II-VI COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPH03160734A
公开(公告)日：1991-07-10
申请号：JP30051789
申请日：1989-11-17
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OKAWA KAZUHIRO , KARASAWA TAKESHI , MITSUYU TSUNEO
IPC分类号： H01L21/203 , H01L21/363 , H01L21/365 , H01L33/06 , H01L33/28 , H01L33/30
摘要： PURPOSE:To obtain a II-VI compound semiconductor showing p-type conduction such as ZnSe or ZnS, etc., by effectively adding arsenic which is a group V element and does not move easily in a ZnSe semiconductor. CONSTITUTION:Arsenic added II-VI compound semiconductor is manufactured by growing a II-VI compound semiconductor and simultaneously irradiating or transporting a component obtained by heating and evaporating zinc diarsenide or cadmium diarsenide onto a substrate 15. Namely, in a component of the type of ZnAs2 obtained by adding and evaporating solid ZnAs2, an arsenic atom, which is to enter a group VI element site, is close to a zinc atom, which is a group II element, so that is has about the same atomic arrangement as a II-VI compound semiconductor crystal 16, and arsenic is liable to be effectively taken in as an acceptor. Thus, a II-VI compound semiconductor, to which arsenic, to be activated as an acceptor, is sufficiently added, can be obtained to realize p-type conduction which was conventionally difficult to achieve.

9. 发明专利

JPH0334534A MANUFACTURE OF PHOSPHORUS-DOPED II-VI COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPH0334534A
公开(公告)日：1991-02-14
申请号：JP17011389
申请日：1989-06-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OKAWA KAZUHIRO , KARASAWA TAKESHI , MITSUYU TSUNEO
IPC分类号： H01L21/203 , H01L21/225 , H01L33/28 , H01L33/30 , H01S5/00
摘要： PURPOSE:To obtain a II-VI compound semiconductor which has been doped sufficiently with phosphorus which is activated as an acceptor by a method wherein the phorphorus is doped while a substrate is irradiated with zinc diphosphide or cadmium diphosphide or the zinc diphosphide or the cadmium diphosphide is transported onto the substrate. CONSTITUTION:High-purity zinc (Zn), selenium (Sn) and zinc diphosphide (ZnP2) as raw materials are filled respectively into separate molecular-beam sources 21, 22, 23; a substrate 15 which has been cleaned is attached to a substrate holder 13. 21a is a Zn molecular beam, 22a is an Sn molecular beam and 23a is a molecular beam which is obtained by heating and evaporating solid ZnP2. Then, a vacuum container 12 is evacuated to an ultrahigh vacuum; the GaAs substrate 15 is thermally etched at 600 deg.C for 10 min to clean the surface of the substrate. The substrate 15 is stabilized at a temperature within a range of 200 to 500 deg.C which is suitable for a growth operation of a II-VI compound semiconductor. When the substrate 15 is irradiated simultaneously with the Zn molecular beam 21a, the Se molecular beam 22a and the ZnP2 molecular beam 23a, a phosphorus-doped ZnSe thin-film crystal 16 can be formed.

10. 发明专利

JPH02285630A SUPERLATTICE STRUCTURAL ELEMENT 失效
公开(公告)号：JPH02285630A
公开(公告)日：1990-11-22
申请号：JP10860389
申请日：1989-04-26
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KARASAWA TAKESHI , OKAWA KAZUHIRO , MITSUYU TSUNEO
IPC分类号： C30B23/08 , C30B29/48 , C30B29/68 , H01L21/203 , H01L33/06 , H01L33/28 , H01L33/30
摘要： PURPOSE:To manufacture the title superlattice structural element matching with the lattice of a substrate only by materials comprising the superlattices by a method wherein a superlattice I comprising ZnTe and ZnS it formed on an InP substrate making the mean lattice constant larger than the lattice constant of the substrate and then another superlattice II is formed making the mean lattice constant smaller than the lattice constant of the substrate. CONSTITUTION:Within a superlattice structural element composed of ZnTe and ZnS alternately laminated on an InP substrate 4, a superlattice I comprising ZnTe and ZnS is formed on the said substrate 4 making the mean lattice constant larger than the lattice constant of the substrate 4 likewise another superlattice II comprising ZnTe and ZnS is formed on the superlattice I making the mean lattice constant smaller than the lattice constant of the substrate 4. In such a constitution, respective thick nesses of the superlattice constants I and II are selected so that the mean lattice constant of the whole system comprising the said superlattices I and II may be almost equalized with the lattice constant of the substrate 4. Furthermore, ZnSe may be substituted for the said ZnS likewise CdSe may be substituted for the said ZnTe.

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