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1. 发明专利

JP2003075316A Hardness sensor and hardness measurement method using it 有权
标题翻译：硬度传感器和硬度测量方法
公开(公告)号：JP2003075316A
公开(公告)日：2003-03-12
申请号：JP2001264730
申请日：2001-08-31
申请人： Kyushu Keisokuki Kk , National Institute Of Advanced Industrial & Technology , 九州計測器株式会社 , 独立行政法人産業技術総合研究所
发明人： AKIYAMA MORIHITO , UENO NAOHIRO , NONAKA KAZUHIRO , TATEYAMA HIROSHI , ISHIDA MASAMI , AZUMA SHINYA
IPC分类号： G01N3/40
摘要： PROBLEM TO BE SOLVED: To provide a hardness sensor having a simple operation principle, capable of measuring hardness of various substances and usable for broad application and to provide a hardness measurement method using it.
SOLUTION: This hardness sensor is composed of: a vibration generation part comprising a member for receiving a dropped tested object through an insulation layer and for generating vibration by impact and two electrodes connected to it; a vibration detection part for detecting the frequency of the mechanical vibration generated in the vibration generation part as an electric variable; and conductors for forming an electric circuit between the vibration generation part and the vibration detection part through the electrodes. The tested object is dropped on the member for generating the vibration by impact through the insulation layer, the frequency of the mechanical vibration generated in the member is detected as an electric signal by an electric variable detection meter through the two electrodes connected to the member for generating the vibration by the impact, and thus the hardness of the object is measured.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种具有简单操作原理的能够测量各种物质的硬度并可广泛应用的硬度传感器，并提供使用它的硬度测量方法。解决方案：该硬度传感器由以下部件组成：振动产生部件，包括用于通过绝缘层接收被落下的测试对象并通过冲击产生振动的部件和与其连接的两个电极; 振动检测部，用于检测在振动产生部中产生的机械振动的频率作为电变量; 以及用于通过电极在振动发生部和振动检测部之间形成电路的导体。被测物体落在构件上，用于通过穿过绝缘层的冲击而产生振动，通过电动可变检测仪通过连接到构件的构件的两个电极将构件中产生的机械振动的频率检测为电信号，通过冲击产生振动，从而测量物体的硬度。

2. 发明专利

JP2014236051A 圧電体薄膜及びその製造方法有权
标题翻译：压电薄膜及其制造方法
公开(公告)号：JP2014236051A
公开(公告)日：2014-12-15
申请号：JP2013115477
申请日：2013-05-31
申请人：株式会社デンソー , Denso Corp , 独立行政法人産業技術総合研究所 , National Institute Of Advanced Industrial & Technology
发明人： TESHIGAWARA AKIHIKO , KANO KAZUHIKO , AKIYAMA MORIHITO , NISHIKUBO KEIKO
IPC分类号： H01L41/316 , C23C14/06 , H01L41/187
CPC分类号： H01L41/18 , C23C14/0052 , C23C14/06 , C23C14/0641 , C23C14/18 , C23C14/185 , C23C14/34 , C23C14/3464 , C23C14/46 , H01L41/187 , H01L41/316
摘要：【課題】優れた圧電特性を確実に発揮することができるスカンジウムアルミニウム窒化物からなる圧電体薄膜、及びその製造方法すること。【解決手段】スパッタリングにより得られ、かつスカンジウムアルミニウム窒化物からなる圧電体薄膜1である。その炭素原子の含有率が2.5at%以下である。圧電体薄膜1の製造にあたっては、少なくとも窒素ガスを含む雰囲気下で、炭素原子の含有率が5at%以下のスカンジウムアルミニウム合金ターゲット材からスカンジウムとアルミニウムとを基板上に同時にスパッタリングする。また、合金ターゲット材の対向面に対して斜めからイオンビームを照射してスパッタリングすることもできる。また、Scターゲット材とAlターゲット材からアルミニウムとスカンジウムとを基板上に同時にスパッタリングすることもできる。【選択図】図1
摘要翻译：要解决的问题：提供一种能够可靠地显示出优异的压电特性的由氮化钪制成的压电薄膜，以及制造压电薄膜的方法。解决方案：通过溅射获得压电薄膜1 的氮化钪，碳原子数的百分含量为2.5原子％以下。在制造压电薄膜1时，在至少含有氮气的气氛中，将钪和铝同时溅射在碳原子数为5原子％以下的钪铝合金靶材的基板上。或者也可以通过用离子束倾斜照射合成靶材的表面进行溅射。或者，钪和铝也可以从Sc靶材料和Al靶材料同时溅射在基底上。

3. 发明专利

JP2009270127A Method for manufacturing of piezoelectric material, and piezoelectric element 有权
标题翻译：压电材料的制造方法和压电元件
公开(公告)号：JP2009270127A
公开(公告)日：2009-11-19
申请号：JP2008118613
申请日：2008-04-30
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： TAWARA TATSUO , NISHIJIMA MASARU , AKIYAMA MORIHITO
IPC分类号： C23C14/34 , C23C14/06 , C23C14/58 , H01L41/18 , H01L41/187 , H01L41/316 , H01L41/39 , H01L41/43
摘要： PROBLEM TO BE SOLVED: To provide an aluminum nitride piezoelectric material having a wurtzite-type crystal structure which is material-designed so as to improve the time constant at high temperature. SOLUTION: In a method for manufacturing of the piezoelectric material consisting of aluminum nitride having the wurtzite-type crystal structure, under the presence of gaseous mixture in which the oxygen content is 0.001-0.5%, and the total content of argon and nitrogen is 99.5-99.999%, aluminum and nitrogen and oxygen in the gaseous mixture are reacted with each other and deposited on a substrate, and the aluminum nitride deposited on the substrate is heated at the temperature of 500-850°C. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种具有纤锌矿型晶体结构的氮化铝压电材料，其被材料设计以提高高温下的时间常数。解决方案：在由含有纤锌矿型晶体结构的氮化铝构成的压电材料的制造方法中，在氧含量为0.001-0.5％的气体混合物存在下，氮气为99.5-99.999％，气体混合物中的铝和氮和氧气彼此反应并沉积在基板上，并且沉积在基板上的氮化铝在500-850℃的温度下被加热。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009149953A Method for manufacturing nitride semiconductor and nitride semiconductor device 有权
标题翻译：制造氮化物半导体和氮化物半导体器件的方法
公开(公告)号：JP2009149953A
公开(公告)日：2009-07-09
申请号：JP2007330018
申请日：2007-12-21
申请人： Denso Corp , National Institute Of Advanced Industrial & Technology , 株式会社デンソー , 独立行政法人産業技術総合研究所
发明人： AKIYAMA MORIHITO , KANBARA TOSHIHIRO , KANO KAZUHIKO , TESHIGAWARA AKIHIKO
IPC分类号： C23C14/34 , C23C14/06 , H01L33/32 , H01L41/18 , H01L41/316 , H01L41/39 , H03H3/02 , H03H9/17
摘要： PROBLEM TO BE SOLVED: To materialize a reactive sputtering method for controlling a polarization direction of a nitride semiconductor thin film by a simple method without being restricted in substrates. SOLUTION: A method for manufacturing the nitride semiconductor is disclosed for manufacturing the nitride semiconductor using a reactive sputtering method by reacting nitrogen with at least one metal selected from the group consisting of aluminum, gallium, indium, scandium, aluminum-gallium alloy, aluminum-indium alloy, aluminum-scandium alloy, gallium-scandium alloy, gallium-indium alloy, and indium-scandium alloy, under an inert gaseous atmosphere, wherein oxygen is supplied together with nitrogen, and mol% of the oxygen with respect to the total mole number of nitrogen and oxygen is ≥0.8%, and ≤3.2%. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过简单的方法来实现用于控制氮化物半导体薄膜的偏振方向的反应性溅射方法，而不受基板的限制。公开了一种用于制造氮化物半导体的方法，用于通过使氮与选自铝，镓，铟，钪，铝 - 镓合金中的至少一种金属反应的反应溅射法制造氮化物半导体，铝 - 铟合金，铝 - 钪合金，镓 - 钪合金，镓 - 铟合金和铟 - 钪合金，其中氧与氮一起供应，并且相对于氮和氧的总摩尔数≥0.8％，≤3.2％。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2006190720A Piezoelectric element 有权
标题翻译：压电元件
公开(公告)号：JP2006190720A
公开(公告)日：2006-07-20
申请号：JP2004382102
申请日：2004-12-28
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： AKIYAMA MORIHITO , TAWARA TATSUO , NOMA HIROAKI , SHOBU KAZUHISA , UENO NAOHIRO , KISHI KAZUJI
IPC分类号： H01L41/08 , H01L41/18 , H01L41/187 , H01L41/22
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric element which can be used by feeling easy even at the temperature of 500°C or higher with the application of an oxidation insulating film with high reliability and the improvement of the short circuiting preventing performance of the piezoelectric element. SOLUTION: In the piezoelectric element in which a piezoelectric material layer 3 and an electrode layer 4 are formed on a conductive substrate 1; an insulating layer 2 is formed by the chemical reaction of at least one component element for constituting a board material on the top surface of the conductive substrate 1 with an atmosphere gas, and the electrode layer 4 is formed so that the insulting layer 2 and the piezoelectric material layer 3 may be put between the conductive substrates 1. Moreover, in the insulating layer 2, an oxide film with a thickness of 0.1 μm-1 μm is applicable, and, also, a nitride film can also be used. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供即使在500℃以上的温度下也可以容易地使用的压电元件，通过施加高可靠性的氧化绝缘膜和提高防短路性能的压电元件。解决方案：在导电基板1上形成压电体层3和电极层4的压电元件中，在导电性基板1的上表面的至少一个构成基板材料的元件与气氛气体的化学反应形成绝缘层2，并且形成电极层4，使得绝缘层2和压电材料层3可以放置在导电基板1之间。此外，在绝缘层2中，可以应用厚度为0.1μm-1μm的氧化物膜，并且也可以使用氮化物膜。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2006058180A High-sensitivity piezoelectric element 有权
标题翻译：高灵敏度压电元件
公开(公告)号：JP2006058180A
公开(公告)日：2006-03-02
申请号：JP2004241495
申请日：2004-08-20
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： AKIYAMA MORIHITO , KANBARA TOSHIHIRO , UENO NAOHIRO , NONAKA KAZUHIRO
IPC分类号： G01L1/16 , H01L41/08 , H01L41/187
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric element, capable of enhancing dramatically sensitivity at the time when converting a mechanical signal into electrical signal, while having a simple structure.
SOLUTION: The piezoelectric element, comprising a substrate 1, a piezoelectric substance layer 2, an electrode layer 3 and the like, is formed into a curved shape. A convex shape, having an arbitrary curvature, or a concave shape having an optional curvature, is allowed as the curved shape. When the piezoelectric substance layers 2 and the electrode layers 3 are formed on both faces of the substrate 1, the sensitivity of the piezoelectric element is further enhanced, because substantially the two piezoelectric elements are provided.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种压电元件，能够在将机械信号转换为电信号时提高显着的灵敏度，同时具有简单的结构。解决方案：包括基板1，压电体层2，电极层3等的压电元件形成为弯曲形状。允许具有任意曲率的凸形或具有任意曲率的凹形作为弯曲形状。当在基片1的两个表面上形成压电物质层2和电极层3时，由于基本上设有两个压电元件，压电元件的灵敏度进一步提高。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005082729A Polyamide composite material, method for producing the same and electronic device made thereof 审中-公开
标题翻译：聚酰亚胺复合材料及其制造方法及其制造的电子器件
公开(公告)号：JP2005082729A
公开(公告)日：2005-03-31
申请号：JP2003317544
申请日：2003-09-09
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： IMAI YUSUKE , TATEYAMA HIROSHI , NONAKA KAZUHIRO , UENO NAOHIRO , AKIYAMA MORIHITO , NOMA HIROAKI
IPC分类号： C08L77/02 , C08K3/34 , C08L77/06
CPC分类号： C08K3/34
摘要： PROBLEM TO BE SOLVED: To eliminate the defects of conventional polyamide-based electric material by imparting impact resistance and heat resistance to a polyamide resin as an electrical material without deteriorating the excellent electrical properties originally possessed by the resin.
SOLUTION: The polyamide composite material is composed of (A) 100 pts. mass of a straight-chain aliphatic polyamide having a repeating unit expressed by general formula -[CO-(CH
2 )
n -NH]- (n is an even number of ≥2) or general formula -[CO-(CH
2 )
m -CONH-(CH
2 )
k -NH]- (m and k are each an odd number of ≥1) and (B) 0.1-20 pts. mass of a delaminated swelling layered silicate uniformly dispersed in the polyamide in molecular level.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过赋予作为电气材料的聚酰胺树脂的耐冲击性和耐热性，而不会降低树脂最初具有的优异的电性能来消除常规聚酰胺类电气材料的缺陷。
解决方案：聚酰胺复合材料由（A）100个组成。具有由通式表示的重复单元的直链脂肪族聚酰胺的质量 - [CO-（CH 2 ） -NH] - （n是偶数 ≥2）或通式 - [CO-（CH 2 ） -CONH-（CH 2 > -NH] - （m和k各自为奇数≥1），（B）为0.1-20个。质量分层水平均匀分散在聚酰胺中的分层膨胀层状硅酸盐的质量。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2003075277A Sheetlike pressure sensor 审中-公开
标题翻译： SHEETLIKE压力传感器
公开(公告)号：JP2003075277A
公开(公告)日：2003-03-12
申请号：JP2001269143
申请日：2001-09-05
申请人： National Institute Of Advanced Industrial & Technology , Omron Corp , オムロン株式会社 , 独立行政法人産業技術総合研究所
发明人： KINOSHITA MASAHIRO , SUNAKAWA YOSHITOSHI , NOZOE SATOSHI , UMEUCHI YOSHIHIRO , TATEYAMA HIROSHI , AKIYAMA MORIHITO , UENO NAOHIRO
IPC分类号： G01L5/00
摘要： PROBLEM TO BE SOLVED: To provide an ultrathin sheetlike pressure sensor having a simple structure and excellent in durability.
SOLUTION: A pressure-sensitive layer 13 changing a dielectric constant by pressure is formed between counter electrodes 12 and 14 to be integrally laminated to the electrodes.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种结构简单，耐久性优异的超薄片状压力传感器。解决方案：在对置电极12和14之间形成通过压力改变介电常数的压敏层13，以整体地层叠在电极上。

9. 发明专利

JP2015026700A センサ一体型吸着チャック及び処理装置有权
标题翻译：传感器一体化接头和加工设备
公开(公告)号：JP2015026700A
公开(公告)日：2015-02-05
申请号：JP2013155080
申请日：2013-07-25
申请人：株式会社クリエイティブテクノロジー , Creative Technology Corp , 株式会社クリエイティブテクノロジー , 独立行政法人産業技術総合研究所 , National Institute Of Advanced Industrial & Technology
发明人： YASAKA MITSUO , TATSUMI YOSHIAKI , MURAKAMI KENJI , TAWARA TATSUO , AKIYAMA MORIHITO , KASAJIMA YUJI , UESUGI FUMIHIKO
IPC分类号： H01L21/683 , H01L21/3065 , H02N13/00
摘要：【課題】センサ一体型吸着チャック及び処理装置に関し、被加工試料周辺で発生する微弱な異常放電にともなう超音波やウェーハの跳ね等の機械的振動を精度よく検出する。【解決手段】吸着機構を備えた吸着チャックと、前記吸着チャックの試料載置面と反対側の面上に一体成膜した導電性シールド層/圧電体層/電極層からなる積層構造を有する音響センサとを設ける。【選択図】図1
摘要翻译：要解决的问题：关于传感器集成的吸盘和处理设备，精确地检测与工件周边产生的弱异常放电相关的超声波和晶片跳跃等机械振动。解决方案：一体吸入卡盘包括吸入卡盘，其包括抽吸机构，以及声学传感器，其具有层叠结构，该层叠结构构成一体地沉积在吸入件的工件装载表面的另一侧的表面上的导电屏蔽层/压电层/电极层卡盘

10. 发明专利

JP2009156641A Piezoelectric sensor 有权
标题翻译：压电传感器
公开(公告)号：JP2009156641A
公开(公告)日：2009-07-16
申请号：JP2007332965
申请日：2007-12-25
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： TAWARA TATSUO , MIYOSHI NORIKO , FUKAMACHI SATORU , AKIYAMA MORIHITO
IPC分类号： G01L1/16
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric sensor whose yield and durability to mechanical load are high.
SOLUTION: The structure of this piezoelectric sensor 10 wherein a lower electrode 2, a piezoelectric thin film 3, and a top electrode 4 are provided on a substrate 1, has moreover an air gap layer 6 between the thin film 3 and the top electrode 4. By providing the air gap layer 6, it becomes difficult for the lower electrode 2 and the top electrode 4 to short-circuit, even when chipping occurs or a fatigue crack is produced in the manufacture of the thin film 3. Accordingly, the yield and the durability of the piezoelectric sensor are enhanced.
COPYRIGHT: (C)2009,JPO&INPIT

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