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    • 3. 发明专利
    • Method and apparatus for recovering silicon
    • 回收硅的方法和装置
    • JP2012180255A
    • 2012-09-20
    • JP2011045722
    • 2011-03-02
    • Kuraray Co Ltd株式会社クラレ
    • INOUE KAZUMAIWASAKI HIDEJIINAO YUICHIROKOMATSU KENSAKU
    • C01B33/037B03B5/28B03B9/06C02F11/00C02F11/12
    • Y02W30/20Y02W30/524
    • PROBLEM TO BE SOLVED: To provide a method and an apparatus for recovering silicon by refining silicon chips to which carbon-based impurities adhere, and which are contained in waste slurry or its concentrated portion discharged by cutting or polishing a silicon block or a silicon wafer.SOLUTION: This method for recovering silicon by refining silicon chips to which carbon-based impurities adhere has an exfoliation process for exfoliating impurities adhering to silicon chips from the silicon chips, and a separation process for separating the silicon chips from the exfoliated impurities. In the exfoliation process, the silicon chips are irradiated with an ultrasonic wave to exfoliate impurities from the silicon chips, and thereafter in the separation process, the silicon chips irradiated with the ultrasonic wave are separated from the exfoliated impurities. A recovery apparatus comprising an exfoliation apparatus including an ultrasonic wave generation means, and a separation device is also provided.
    • 要解决的问题:提供一种用于通过精炼硅基杂质附着的硅片来回收硅并通过切割或抛光硅块排出废弃物浆料或其浓缩部分而包含的方法和装置,或者 硅晶片。 解决方案:用于通过精炼硅基杂质的硅芯片来回收硅的方法具有剥离硅芯片附着于硅片上的杂质的剥离工艺,以及用于将硅片与剥离的杂质分离的分离方法 。 在剥离处理中,利用超声波照射硅芯片,从硅片剥离杂质,然后在分离工序中,用超声波照射的硅芯片与剥离的杂质分离。 还提供一种包括包括超声波产生装置的剥离装置和分离装置的恢复装置。 版权所有(C)2012,JPO&INPIT
    • 4. 发明专利
    • Sample container for shock compression molding, and shock compression molding device
    • 用于冲击压缩成型的样品容器和冲击压缩成型装置
    • JP2012106262A
    • 2012-06-07
    • JP2010257193
    • 2010-11-17
    • Kimigafuchi GakuenKuraray Co Ltd学校法人君が淵学園株式会社クラレ
    • KIRA AKIOIWASAKI HIDEJI
    • B30B11/02B30B11/04
    • PROBLEM TO BE SOLVED: To provide a sample container used for shock compression molding, which can be easily mounted with a sample, from which a molded part can be discharged after shock compression molding without breaking the same, and which can be reutilized, and a molding device.SOLUTION: The sample container 14 for shock compression molding includes, as freely attachable/detachable constituting members, (A) a pedestal 4 having an annular groove 4b at the upper face, (B) a pedestal auxiliary ring 2 fitted to the annular groove 4b of the pedestal 4, (C) a shock receiving member 1 having a projecting part 1a fitted to the cavity part 2a of the pedestal auxiliary ring 2 at the lower face and having an another projecting part 1b at the upper face, and (D) a holding ring 3 having a level difference fitted to the projecting part 1b of the upper face in the shock receiving member 1.
    • 要解决的问题:为了提供一种用于冲击压缩成型的样品容器,其可以容易地安装在样品上,在冲击压缩成型后可以从其中排出成型部件而不破坏成型部件,并且可以再利用 ,和成型装置。 用于冲击压缩成型的样品容器14包括作为可自由装卸的构成部件的(A)在上表面具有环形槽4b的基座4,(B)基座辅助环2, 基座4的环状槽4b,(C)具有突出部1a的冲击接收构件1,该突起部1a在下表面嵌合于基座辅助环2的空腔2a,并且在上表面具有另一突出部1b,以及 (D)具有与冲击承受构件1的上表面的突出部1b配合的水平差的保持环3.版权所有(C)2012,JPO&INPIT
    • 6. 发明专利
    • Photocell and photo storage battery
    • 照相机和照相机电池
    • JP2011100676A
    • 2011-05-19
    • JP2009255786
    • 2009-11-09
    • Kuraray Co Ltd株式会社クラレ
    • IWASAKI HIDEJI
    • H01M14/00H01L31/04
    • Y02E10/542
    • PROBLEM TO BE SOLVED: To provide a photocell and a photo storage battery which has a simple structure and high efficiency. SOLUTION: The photocell includes: a photo power generation electrode to have a current collector to which a semiconductor photocatalyst membrane is closely stuck; a counter electrode electrically connected to the photo power generation electrode; and an electrolyte to contact the photo power generation electrode and the counter electrode. The photo storage battery includes the photo power generation electrode to have the current collector to which the semiconductor photocatalyst membrane and an electrolyte adsorptive conductive material are closely stuck, and the electrolyte contacting the photo power generation electrode. This photo storage battery can have the counter electrode electrically connected to the photo power generation electrode. COPYRIGHT: (C)2011,JPO&INPIT
    • 解决的问题:提供一种结构简单,效率高的光电池和光电池。 光电池包括:具有半导体光催化膜紧密粘合的集电体的光电发电极; 电连接到光电发电极的对电极; 以及与光电发电电极和对电极接触的电解质。 光电池包括具有半导体光催化剂膜和电解质吸附导电材料紧密贴合的集电体的光电发电电极,并且电解质与光电发电电极接触。 该光电池可以使电极与光电发电电极电连接。 版权所有(C)2011,JPO&INPIT
    • 8. 发明专利
    • Method for preparing zinc sulfide phosphor
    • 硫化锌磷化氢的制备方法
    • JP2010143967A
    • 2010-07-01
    • JP2008319864
    • 2008-12-16
    • Kuraray Co Ltd株式会社クラレ
    • SHIRAHASE MASAIWASAKI HIDEJI
    • C09K11/56C09K11/08
    • PROBLEM TO BE SOLVED: To provide a method for preparing a high luminance-small particle diameter phosphor which can obtain a high luminance at a low voltage by the method of imparting an impact with good repeatability. SOLUTION: In the method for preparing a zinc sulfide phosphor comprising a first burning step (1) of burning a raw material mixture including zinc sulfide containing a metal element which becomes the luminescence center and a flux at a temperature of not lower than 1,000°C to transform the zinc sulfide to a hexagonal crystal, a step (2) of imparting an impact on the burnt product after the first burning step, and a second burning step (3) of burning the impact-imparted burnt product again at a temperature of not lower than 600°C to transform the hexagonal crystal to a cubic crystal, the impact is imparted on the burnt product after the first burning step in such a manner that the Raman shift value caused by the longitudinal optical mode (LO mode) observed in the neighborhood of 350 cm -1 in the Raman spectrum of the burnt product after imparting the impact shifts toward the longer wave number side by 0.1-1 cm -1 compared to the Raman shift value of the burnt product before imparting the impact. COPYRIGHT: (C)2010,JPO&INPIT
    • 解决的问题:提供一种制备高亮度 - 小粒径的荧光体的方法,其可以通过以高重复性赋予冲击的方法在低电压下获得高亮度。 解决方案:在制备硫化锌荧光粉的方法中,该方法包括:将包含含有成为发光中心的金属元素的硫化锌的原料混合物和不低于 1000℃,将硫化锌转变为六方晶体,在第一燃烧工序后对烧成品产生冲击的工序(2),以及将冲击赋予的烧成品再次燃烧的第二烧成工序(3) 为了将六方晶体转变为立方晶体的温度不低于600℃,在第一次燃烧步骤之后,以纵向光学模式(LO模式)引起的拉曼偏移值使冲击产生 )在向冲击波长方向偏移0.1-1厘米-1以上的燃烧产物的拉曼光谱中在350cm -1附近观察到 -1 与燃烧产物的拉曼位移值相比较 之前给予影响。 版权所有(C)2010,JPO&INPIT