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1. 发明专利

JP2011219286A Method and system for manufacturing silicon and silicon carbide 审中-公开
标题翻译：用于制造硅和碳化硅的方法和系统
公开(公告)号：JP2011219286A
公开(公告)日：2011-11-04
申请号：JP2010088015
申请日：2010-04-06
申请人： Koji Tomita , 富田孝司
发明人： TOMITA KOJI
IPC分类号： C01B33/025 , C01B31/36
CPC分类号： C01B33/025 , C30B25/02 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing high purity silicon by a reduction method.SOLUTION: The method and a system for manufacturing silicon and silicon carbide simultaneously are provided as follows. Silicon carbide and silica are ground. After cleaning, they are mixed at predetermined ratios and accommodated in a crucible 7. They are made to react through heating by a heating unit. The silicon carbide is oxidized with the silica, the silica is reduced with the silicon carbide, resulting in production and extraction of the silicon 55. At the same time, the silicon carbide 59 is manufactured in such a way that a silicon carbide film 10 is formed by vapor phase epitaxy using active gasses 56 and 57 as raw materials generated in heating for reaction and recovering the silicon carbide film 10.
摘要翻译：要解决的问题：提供通过还原方法制造高纯度硅的方法。解决方案：同时提供制造硅和碳化硅的方法和系统如下。研磨碳化硅和二氧化硅。清洗后，将其以预定的比例混合并容纳在坩埚7中。它们通过加热单元加热而反应。碳化硅被二氧化硅氧化，二氧化硅被碳化硅还原，导致硅55的生产和提取。同时，碳化硅59制造成使碳化硅膜10为通过气相外延形成，使用活性气体56和57作为加热反应生成的原料并回收碳化硅膜10.版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2012054424A Solar battery, and method of manufacturing the same 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：JP2012054424A
公开(公告)日：2012-03-15
申请号：JP2010196087
申请日：2010-09-01
申请人： Koji Tomita , 富田孝司
发明人： TOMITA KOJI
IPC分类号： H01L31/04
CPC分类号： H01L31/074 , H01L31/0725 , H01L31/1804 , H01L31/1852 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To obtain a solar battery with a high conversion efficiency by increasing an open circuit voltage.SOLUTION: In a hetero junction type solar battery, a semiconductor A, and a semiconductor B having a conductor different from the semiconductor A and having an electron affinity alarger than the electron affinity aof the semiconductor A are bonded, and the semiconductor A and the semiconductor B are lattice-matched within 1% respectively. In a method of manufacturing a hetero junction type solar battery in which a semiconductor A, and a semiconductor B having a conductor different from the semiconductor A and having an electron affinity alarger than the electron affinity aof the semiconductor A are bonded, and in which the semiconductor A and the semiconductor B are lattice-matched within 1% respectively, the semiconductor A is a p-type silicon. A p-type germanium layer is formed on a surface of the semiconductor A. An oxide film is removed by removing the germanium layer, and then, an n-type GaP is formed. An open circuit voltage in the obtained solar battery is 2 V. Thus, a high open circuit voltage can be obtained.
摘要翻译：要解决的问题：通过增加开路电压来获得具有高转换效率的太阳能电池。解决方案：在异质结型太阳能电池，半导体A和具有不同于半导体A的导体且具有大于电子亲和力的电子亲和力的半导体B 半导体A的电子亲和力a 1 键合，半导体A和半导体B分别在1％以内格子匹配。在制造异质结型太阳能电池的方法中，其中半导体A和半导体B具有不同于半导体A的导体，并且具有比电子亲和力a 2 大于半导体A的电子亲和力a 1 分别结合，半导体A和半导体B分别在1％以内格子匹配，型硅。在半导体A的表面上形成p型锗层。通过除去锗层除去氧化膜，然后形成n型GaP。所获得的太阳能电池中的开路电压为2V。因此，可以获得高开路电压。版权所有（C）2012，JPO＆INPIT

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