专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008229473A Method of removing pcb in trace pcb contaminated electric equipment 有权
标题翻译：在PCB PCB污染电气设备中移除PCB的方法
公开(公告)号：JP2008229473A
公开(公告)日：2008-10-02
申请号：JP2007071888
申请日：2007-03-20
申请人： Kansai Electric Power Co Inc:The , Toshiba Corp , 株式会社東芝 , 関西電力株式会社
发明人： TOYODA HIROKO , NISHIZAWA KATSUSHI , SUGAYA MASAHIDE , SHIMODAIRA TADASHI , YONEZAWA HIROSHI , TAKAYAMA DAISUKE
IPC分类号： B08B3/04 , B08B3/08 , B09B3/00 , H01F41/00
CPC分类号： Y02W30/82
摘要： PROBLEM TO BE SOLVED: To provide a method of removing PCB in trace PCB contaminated electric equipment capable of performing removal treatment safely and economically while grasping an inner state of the equipment when extracting and removing PCB in the electric equipment into a solvent. SOLUTION: In the method of removing PCB in trace PCB contaminated electric equipment, insulating oil is pulled out from the electric equipment into which the insulating oil containing PCB is filled, thereafter, a hydrocarbon solvent is injected, the PCB remaining in the electric equipment is dissolved into the hydrocarbon solvent and the hydrocarbon solvent in which the PCB is dissolved is discharged, wherein circumstances of removal treatment in the electric equipment is calculated by the calculating formula (initial oil PCB concentration × weight × residual oil rate (oil attachment rate) × cleaning efficiency) and the removal treatment is advanced while confirming the calculation result. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种在痕量PCB污染的电气设备中去除PCB的方法，其能够在将电气设备中的PCB提取和去除溶剂时抓住设备的内部状态时，安全和经济地执行去除处理。
解决方案：在痕量PCB污染电气设备中去除PCB的方法中，从装有绝缘油的电气设备中抽出绝缘油，然后注入烃溶剂，PCB保留在将电气设备溶解在烃类溶剂中，排出PCB溶解的烃类溶剂，通过计算式（初始油PCB浓度×重量×残油率（油附着量））计算电气设备中的除去处理情况速率）×清洗效率），并且在确认计算结果的同时进行去除处理。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008142615A Method and apparatus for removing pcb from pcb contaminated transformer 审中-公开
标题翻译：从PCB污染变压器去除PCB的方法和装置
公开(公告)号：JP2008142615A
公开(公告)日：2008-06-26
申请号：JP2006331987
申请日：2006-12-08
申请人： Kansai Electric Power Co Inc:The , Toshiba Corp , 株式会社東芝 , 関西電力株式会社
发明人： SHIMODAIRA TADASHI , TAKAYAMA DAISUKE , YONEZAWA HIROSHI , ANDO SUEO , TOYODA HIROKO , NISHIZAWA KATSUSHI
IPC分类号： B09B5/00 , H01F27/14 , H01F41/00
摘要： PROBLEM TO BE SOLVED: To realize safe and economical detoxification by cleaning, and removing PCB from a transformer filled with an isolating oil containing PCB without dismounting it on the spot.
SOLUTION: In the method for removing PCB from the PCB contaminated transformer 1 filled with the isolating oil 2 containing PCB, the isolating oil containing PCB is taken out of the transformer, a cleaning solvent 10 is injected into the transformer while maintaining a vacuum inside the transformer, and PCB is removed by cleaning the inside of the transformer with the injected solvent.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过清洗实现安全经济的排毒，并从装有含PCB隔离油的变压器中取出PCB，而不必现场拆卸。
解决方案：在从含有PCB的隔离油2的PCB污染变压器1中去除PCB的方法中，将含有隔离油的PCB从变压器中取出，将清洗溶剂10注入变压器，同时保持通过用注入的溶剂清洁变压器的内部，去除变压器内部的真空和PCB。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2006108437A High withstand voltage semiconductor device covered with resin, and its manufacturing method 有权
标题翻译：带有树脂的高耐受电压半导体器件及其制造方法
公开(公告)号：JP2006108437A
公开(公告)日：2006-04-20
申请号：JP2004293873
申请日：2004-10-06
申请人： Asahi Denka Kogyo Kk , Kansai Electric Power Co Inc:The , 旭電化工業株式会社 , 関西電力株式会社
发明人： OKADA SHINICHI , SUGAWARA YOSHITAKA , ASANO KATSUNORI , TAKAYAMA DAISUKE , SHOJI YOSHIKAZU , SHANADO TADASHI , SUEYOSHI TAKASHI , HIWATARI KENICHIRO
IPC分类号： H01L21/56 , H01L23/29 , H01L23/31
CPC分类号： H01L23/24 , H01L23/296 , H01L23/3121 , H01L24/48 , H01L2224/48137 , H01L2224/4823 , H01L2224/8592 , H01L2924/00014 , H01L2924/01004 , H01L2924/01078 , H01L2924/10272 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： PROBLEM TO BE SOLVED: To solve the problem that, if the semiconductor chip of a high withstand voltage is mounted on a substrate and a package and is sealed with a resin, a leak current in application of a high reverse voltage is large and unstable, and a dielectric breakdown power as designed may not be obtained. SOLUTION: When a sealing resin is applied to the high withstand voltage semiconductor mounted on a package or a substrate and is hardened, the resin is hardened while applying a high voltage between at least one electrode terminal connected from the electrode of a chip or the chip by wiring such as a wire and another electrode which requires a dielectric withstand voltage between it and the electrode terminal. The sealing resin uses a synthetic high polymer wherein organosilicon polymer C is constituted by linking organosilicon polymer A with a bridge structure by siloxane and organosilicon polymer B with a liner linkage structure by siloxane (Si-O-Si combination) alternately by siloxane bond and linking it in three-dimensional manner by covalent bond. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题为了解决如果高耐压的半导体芯片安装在基板和封装上并用树脂密封的问题，则施加高反向电压的漏电流大并且不稳定，并且不能获得所设计的绝缘击穿功率。解决方案：当将密封树脂施加到安装在封装或基板上的高耐压半导体并被硬化时，树脂硬化，同时在从芯片的电极连接的至少一个电极端子之间施加高电压或者通过诸如电线和另一电极之类的布线的芯片，该电极和电极端子之间需要介电耐受电压。密封树脂使用合成高分子，其中有机硅聚合物C通过硅氧烷和有机硅聚合物B通过硅氧烷键交联地通过硅氧烷（Si-O-Si组合）与衬里连接结构连接有机硅聚合物A和桥结构而构成，它以三维方式通过共价键。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2003309133A High thermostability semiconductor element and power converter using the same 有权
标题翻译：高温可控硅半导体元件和功率转换器
公开(公告)号：JP2003309133A
公开(公告)日：2003-10-31
申请号：JP2002113245
申请日：2002-04-16
申请人： Hitachi Ltd , Kansai Electric Power Co Inc:The , 株式会社日立製作所 , 関西電力株式会社
发明人： KODAMA HIRONORI , TAKAYAMA DAISUKE , ASANO KATSUNORI , SUGAWARA YOSHITAKA
IPC分类号： H01L25/10 , H01L21/52
CPC分类号： H01L24/01 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element wherein a plurality of SiC semiconductor chips are incorporated in a flat package, for attaining high reliability in higher temperature use and also durability in higher temperature use without causing oxidation deterioration, and provide a power converter that exerts higher performance comparing with a conventional power converter using an Si semiconductor element. SOLUTION: The semiconductor element of high thermostability has such an arrangement that; a plurality of semiconductor chips are incorporated, being juxtaposed, in the flat package whose interior is airtightly sealed by a pair of common electrode plates and an insulating outer cylinder made of ceramics; and a Pt layer is formed at least on the externally exposed surface of each of the common electrode plates. Such an element is used for a power converter for exerting high performance. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供一种半导体元件，其中多个SiC半导体芯片被并入扁平封装中，为了在较高温度使用中获得高可靠性，并且还提供了在较高温度下的耐久性而不会引起氧化劣化，并提供一种功率转换器与使用Si半导体元件的常规功率转换器相比具有更高的性能。解决方案：高热稳定性的半导体元件具有以下结构：多个半导体芯片被并入，并入其内部由一对公共电极板和由陶瓷制成的绝缘外筒气密密封的扁平封装中; 并且至少在每个公共电极板的外露表面上形成Pt层。这种元件用于实现高性能的功率转换器。版权所有（C）2004，JPO

5. 发明专利

JP2005050909A Pressure welding semiconductor device and converter using same 有权
标题翻译：压力焊接半导体器件和转换器
公开(公告)号：JP2005050909A
公开(公告)日：2005-02-24
申请号：JP2003203806
申请日：2003-07-30
申请人： Hitachi Ltd , Kansai Electric Power Co Inc:The , 株式会社日立製作所 , 関西電力株式会社
发明人： MIYAUCHI AKIHIRO , SUGAWARA YOSHITAKA , TAKAYAMA DAISUKE
IPC分类号： H01L21/52
CPC分类号： H01L2224/06181 , H01L2224/32225 , H01L2224/33181 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a pressure welding semiconductor element in which a gap is not caused between the semiconductor element and a main electrode plate to a temperature change or the change of an applied pressure in use at a pressure welding package and which has high reliability, and to provide a power converter. SOLUTION: The pressure welding semiconductor element includes at least one semiconductor chip 104 and a pair of intermediate electrodes 102, 103 for holding the semiconductor chip assembled between a pair of main electrode plates 101 and 106 as a component of a flat type package. A spring washer 105 is interposed as a plate-like elastic element between at least one 106 of the main electrode plate and the intermediate electrode 106 opposed to the previous one 106. The elastic element 105 is coated with a coating for preventing the elastic element of platinum, chromium, nickel, gold, etc. from being deteriorated. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在半导体元件和主电极板之间不产生间隙的压焊半导体元件到压力焊接封装使用的温度变化或施加压力的变化，以及具有高可靠性，并提供电力转换器。解决方案：压焊半导体元件包括至少一个半导体芯片104和一对中间电极102,103，用于将组装在一对主电极板101和106之间的半导体芯片作为扁平封装的部件。在主电极板和中间电极106的至少一个106和前一个106相对的106个之间插入弹簧垫圈105作为板状弹性元件。弹性元件105涂覆有用于防止弹性元件铂，铬，镍，金等不会变质。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2005209784A Pressure contact semiconductor device and converter using same 有权
标题翻译：压力接触半导体器件和转换器
公开(公告)号：JP2005209784A
公开(公告)日：2005-08-04
申请号：JP2004013046
申请日：2004-01-21
申请人： Hitachi Ltd , Kansai Electric Power Co Inc:The , 株式会社日立製作所 , 関西電力株式会社
发明人： MIYAUCHI AKIHIRO , SUGAWARA YOSHITAKA , TAKAYAMA DAISUKE
IPC分类号： H01L21/52
摘要： PROBLEM TO BE SOLVED: To provide a pressure contact semiconductor device which can hold a uniform pressurizing status in the area of a pressure contact package, in which a gap is not caused between the semiconductor element and a main electrode plate, even if a temperature expansion change or the change of an applied pressure occurs at a pressure sealing package in use, and which has high reliability; and to provide a power converter.
SOLUTION: A flat package is provided with an elastic body 105 and a metallic mesh sheet 107 between a first main electrode plate 106 and a first intermediate electrode 103. Thus, a highly reliable pressure contact package can be obtained wherein no gap exists between a semiconductor element and a main electrode plate to temperature change or a change in applied pressure when a pressure contact package is used, and a converter can also be obtained.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：为了提供一种压接触点半导体装置，其能够在压接部件的区域内保持均匀的加压状态，其中在半导体元件和主电极板之间不产生间隙，即使在使用的压力密封包装中发生温度膨胀变化或施加压力的变化，其可靠性高; 并提供一个电源转换器。解决方案：扁平封装在第一主电极板106和第一中间电极103之间设置有弹性体105和金属网片107.因此，可以获得高度可靠的压力接触封装，其中不存在间隙半导体元件和主电极板之间的温度变化或使用压力接触封装时的施加压力的变化，并且还可以获得转换器。版权所有（C）2005，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式