会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明专利
    • Chemical mechanical polishing method and slurry used for the same
    • 化学机械抛光方法和浆料用于其中
    • JP2012079879A
    • 2012-04-19
    • JP2010223035
    • 2010-09-30
    • Kuraray Co Ltd株式会社クラレ
    • TAKEKOSHI YUTAKAKATO MITSURUOKAMOTO TOMOHIROKATO SHINYA
    • H01L21/304B24B37/00
    • PROBLEM TO BE SOLVED: To provide a slurry for chemical mechanical polishing excellent in planarization performance and capable of making a step between a stopper film and an insulator film extremely small in a process of forming a shallow trench isolation region.SOLUTION: The slurry for chemical mechanical polishing comprises: (a) a chelate agent, having 3 to 8 acidic groups, where an atomic number existing between acidic groups which are most distantly separated is 4 to 12; (b) an oligosaccharide and/or its derivatives; (c) cerium oxide abrasive grains; and (d) water. The content of (a) the chelate agent is 0.02 to 2.0 mass % of the total amount of the slurry. The content of (b) the oligosaccharide and/or its derivatives is 0.02 to 2.0 mass % of the total amount of the slurry.
    • 要解决的问题:为了提供平坦化性能优异的化学机械抛光浆料,并且能够在形成浅沟槽隔离区域的过程中使阻挡膜和绝缘体膜之间的台阶变得极小。 解决方案:用于化学机械抛光的浆料包括:(a)具有3至8个酸性基团的螯合剂,其中存在于最远离分离的酸性基团之间的原子序数为4至12; (b)寡糖和/或其衍生物; (c)氧化铈磨粒; 和(d)水。 (a)螯合剂的含量为浆料总量的0.02〜2.0质量%。 (b)寡糖和/或其衍生物的含量为浆料总量的0.02〜2.0质量%。 版权所有(C)2012,JPO&INPIT