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1. 发明专利

JP2008211142A Optical semiconductor device 审中-公开
标题翻译：光学半导体器件
公开(公告)号：JP2008211142A
公开(公告)日：2008-09-11
申请号：JP2007048979
申请日：2007-02-28
申请人： Japan Aerospace Exploration Agency , Nippon Telegr & Teleph Corp , 日本電信電話株式会社 , 独立行政法人宇宙航空研究開発機構
发明人： ARAI MASAKAZU , KONDO YASUHIRO , FUJISAWA TAKESHI , NUNOTANI NOBUHIRO , SHIBATA YASUO , KINOSHITA KYOICHI , YODA SHINICHI
IPC分类号： H01S5/343 , G02F1/017 , H01S5/12 , H01S5/183
摘要： PROBLEM TO BE SOLVED: To execute distortion compensation, improve crystallinity and reduce heat resistance in a distortion quantum well structure on an InGaAs substrate.
SOLUTION: A distortion quantum well structure α is formed on an InGaAs substrate 1. Quantum well layers 4, 6, 8 of the quantum well structure α have compression distortion. In order to execute distortion compensation of the compression distortion, InGaAs/GaAs barrier layers 3, 5, 7, 9 including a GaAs layer as a tensile distortion are laminated and formed among the quantum well layers 4, 6, 8. In this way, misfit transition due to distortion and generation of defects can be relaxed. The heat resistance of GaAs having a binary crystal is reduced to suppress temperature rise. Meanwhile. AlAs, AlGaAs or InGaAs may be used instead of the GaAs as tensile distortion.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：在InGaAs衬底上的畸变量子阱结构中执行失真补偿，提高结晶度并降低耐热性。解决方案：在InGaAs衬底1上形成失真量子阱结构α。量子阱结构α的量子阱层4,6,8具有压缩失真。为了执行压缩失真的失真补偿，在量子阱层4,6,8之间层叠并形成包括作为拉伸变形的GaAs层的InGaAs / GaAs势垒层3,5,7,9。这样，由于失真导致的失配转换和缺陷的产生可以放松。具有二元晶体的GaAs的耐热性被降低以抑制温度升高。与此同时。可以使用AlAs，AlGaAs或InGaAs代替GaAs作为拉伸失真。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2009260093A Optical semiconductor device 审中-公开
标题翻译：光学半导体器件
公开(公告)号：JP2009260093A
公开(公告)日：2009-11-05
申请号：JP2008108435
申请日：2008-04-18
申请人： Japan Aerospace Exploration Agency , Nippon Telegr & Teleph Corp , 日本電信電話株式会社 , 独立行政法人宇宙航空研究開発機構
发明人： ARAI MASAKAZU , KONDO YASUHIRO , YODA SHINICHI , KINOSHITA KYOICHI
IPC分类号： H01S5/183 , H01S5/227
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device in which selective oxidation constriction structure is introduced into a substrate consisting of semiconductor crystal InGaAs of ternary mixed crystal.
SOLUTION: The optical semiconductor device has: the substrate 11 consisting of semiconductor crystal In
x Ga
1-x AS of ternary mixed crystal with low In composition ratio
X ; an active layer 13 consisting of InGaAs strain quantum well structure to which crystal growth is performed at low temperature on the substrate 11; and an AlAs layer 14 to which the crystal growth is performed on the active layer 13, and is made into the selective oxidation constriction structure by selectively oxidizing a part of the AlAs 14 to form a selective oxidation layer 14'.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种其中选择性氧化收缩结构被引入由三元混晶的半导体晶体InGaAs组成的衬底中的光学半导体器件。解决方案：光学半导体器件具有：具有低In组成比 x 1-x AS的衬底11 > X ; 在低温下在基板11上进行晶体生长的InGaAs应变量子阱结构构成的有源层13; 以及在有源层13上进行晶体生长的AlAs层14，并且通过选择性地氧化一部分AlAs 14以形成选择性氧化层14'而制成选择性氧化收缩结构。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2008211141A Semiconductor device and optical semiconductor module 审中-公开
标题翻译：半导体器件和光学半导体模块
公开(公告)号：JP2008211141A
公开(公告)日：2008-09-11
申请号：JP2007048978
申请日：2007-02-28
申请人： Japan Aerospace Exploration Agency , Nippon Telegr & Teleph Corp , 日本電信電話株式会社 , 独立行政法人宇宙航空研究開発機構
发明人： ARAI MASAKAZU , KONDO YASUHIRO , FUJISAWA TAKESHI , NUNOTANI NOBUHIRO , SHIBATA YASUO , YAMAMOTO TOMOO , KINOSHITA KYOICHI , YODA SHINICHI
IPC分类号： H01S5/343 , H01S5/227
摘要： PROBLEM TO BE SOLVED: To provide a buried type optical semiconductor device having a distortion quantum well structure on an InGaAs three-dimensional substrate applied thereto and excellent in high temperature operation characteristics by improving the crystallinity of the distortion quantum well structure expected to have excellent temperature characteristics and reducing heat resistance, and to provide an optical semiconductor module.
SOLUTION: The optical semiconductor device such as a semiconductor laser has a structure in which, for example, a distortion quantum well structure α grown as an active layer on a substrate 1 consisting of a semiconductor crystal In(x)Ga(1-x)As of three-dimensional mixed crystal and a laminate structure including a p-InGaP cladding layer 10 as a p-type semiconductor layer, both the structures are processed into a mesa-stripe, and both sides of the distortion quantum well structure α are filled with an Ru-InGaP embedding layer 15 of a semiconductor crystal. In the optical semiconductor device, the distortion quantum well structure α consists of compressed distortion quantum well structures 4, 6, 8 and tensile distortion barrier layers 3, 5, 7, 9 having a distortion quantity of >0 to ≤1.5%. Carbon is used as a p-type dopant of the p-type semiconductor layer. The side of the laminate structure side contacts a heat sink.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种在施加于其上的InGaAs三维衬底上具有失真量子阱结构的掩埋型光学半导体器件，并且通过改善预期的变形量子阱结构的结晶度，具有优异的高温操作特性具有优异的温度特性并降低耐热性，并提供光半导体模块。解决方案：诸如半导体激光器的光学半导体器件具有这样的结构，其中例如在由半导体晶体In（x）Ga（1）组成的衬底1上生长为有源层的变形量子阱结构α -x）作为三维混晶以及包含作为p型半导体层的p-InGaP包覆层10的层叠结构，将这两种结构加工成台面状，并且成形量子阱结构的两面 α被半导体晶体的Ru-InGaP埋入层15填充。在光半导体装置中，畸变量子阱结构α由压缩失真量子阱结构4,6,8以及失真量> 0〜≤1.5％的拉伸失真阻挡层3,5,7,9组成。碳被用作p型半导体层的p型掺杂剂。层压结构侧的一侧接触散热器。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008209863A Semiconductor modulator and optical semiconductor device 有权
标题翻译：半导体调制器和光学半导体器件
公开(公告)号：JP2008209863A
公开(公告)日：2008-09-11
申请号：JP2007048977
申请日：2007-02-28
申请人： Japan Aerospace Exploration Agency , Nippon Telegr & Teleph Corp , 日本電信電話株式会社 , 独立行政法人宇宙航空研究開発機構
发明人： ARAI MASAKAZU , KONDO YASUHIRO , KOBAYASHI WATARU , KINOSHITA KYOICHI , YODA SHINICHI
IPC分类号： G02F1/017 , H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor modulator improving a high-temperature operation characteristic.
SOLUTION: The semiconductor modulator has such a configuration that an InGaAs/InAlAs quantum well layer 3 is formed by arranging an InAlAs barrier layer which is lattice-matched with a substrate on both sides of an InGaAs compressively-strained quantum well layer which is formed as light absorption layer, on a semiconductor crystal InGaAs substrate 1 of ternary mixed crystal.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种提高高温操作特性的半导体调制器。解决方案：半导体调制器具有通过在InGaAs压缩应变量子阱层的两面上配置与衬底晶格匹配的InAlAs阻挡层来形成InGaAs / InAlAs量子阱层3，在三元混晶的半导体晶体InGaAs衬底1上形成光吸收层。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2014084254A Solid-solution single crystal producing method 有权
标题翻译：固体溶液单晶生产方法
公开(公告)号：JP2014084254A
公开(公告)日：2014-05-12
申请号：JP2012234972
申请日：2012-10-24
申请人： Japan Aerospace Exploration Agency , 独立行政法人宇宙航空研究開発機構
发明人： KINOSHITA KYOICHI , ARAI YASUTOMO
IPC分类号： C30B13/02 , C30B29/40
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a solid-solution single crystal, which is suitable for the mass-production of a solid solution (or a mixed solution) single crystal of a uniform composition.SOLUTION: A composite material, in which a molten liquid forming material of a low melting point is arranged on the outer circumference side of a seed crystal 10 and in which a solid material is arranged on the outer circumference side of the former material, is heated from the outer circumference, thereby to give a temperature gradient to become higher toward the outer circumference. The molten liquid forming material of the low melting point melts to form a molten band 11, and moves to the outer circumference side of the composite material while growing a crystal 13 in the region on the side of the seed crystal 10 of the molten band 11, so that the crystal 13 grows toward the outer circumference side of the composite material.
摘要翻译：要解决的问题：提供一种适用于批量生产均匀组成的固溶体（或混合溶液）单晶的固溶单晶的制造方法。溶液：复合材料，将熔融液状的低熔点液体形成材料配置在晶种10的外周侧，在原材料的外周侧配置固体材料，从外周加热，使外部温度梯度变高。低熔点的熔融液体形成材料熔融以形成熔融带11，并且在熔融带11的晶种10侧的区域中生长晶体13同时移动到复合材料的外周侧，使得晶体13向复合材料的外周侧生长。

6. 发明专利

JP2011029213A Optical semiconductor element 审中-公开
标题翻译：光学半导体元件
公开(公告)号：JP2011029213A
公开(公告)日：2011-02-10
申请号：JP2009170076
申请日：2009-07-21
申请人： Furuuchi Kagaku Kk , Japan Aerospace Exploration Agency , フルウチ化学株式会社 , 独立行政法人宇宙航空研究開発機構
发明人： KINOSHITA KYOICHI , YODA SHINICHI , AOKI TAKUYOSHI , HOSOKAWA TADATOSHI , YAMAMOTO SATOSHI , MATSUSHIMA MASAAKI
IPC分类号： H01S5/343 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor element that prevents lattice defects, such as misfit dislocation and through dislocation, from occurring easily and can obtain a high quality crystal, and also improves heat dissipation characteristics of a substrate.
SOLUTION: In the optical semiconductor element, a ternary substrate 1 of In
x Ga
1-x As (0.03≤x≤0.10) having a lattice constant larger than that of GaAs is used as the substrate, an In
z Ga
1-z P buffer layer is formed on the substrate, an In
y Ga
1-y As (0.10 z Ga
1-z P buffer layer, and strain quantum well structure 6 is formed on the In
y Ga
1-y As layer. In the In
y Ga
1-y As layer, for example, composition of the In
z Ga
1-z P buffer layer is changed so that the lattice constant gradually increases from In
x Ga
1-x As.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种光学半导体元件，其防止诸如失配错位和错位之类的晶格缺陷容易发生，并且可以获得高质量的晶体，并且还改善了衬底的散热特性。解决方案：在光学半导体元件中，具有晶格常数大于的晶体常数的三元基片1（In < 将GaAs的材料用作衬底，在衬底上形成一个InSbSb缓冲层，一个GaSb / 在具有比基板的晶格常数更大的晶格常数的（0.10 1-y / SB> P缓冲层，并且在In Ga 1-y As层上形成应变量子阱结构6。例如，在In＆lt; SB＆gt; Ga＆lt; SB＆gt; 1-y＆lt; / SB＆gt; As层中， P缓冲层发生变化，使得晶格常数从In x <1> x As逐渐增加。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2008024562A Method of manufacturing solid solution single crystal 有权
标题翻译：固体溶液单晶的制备方法
公开(公告)号：JP2008024562A
公开(公告)日：2008-02-07
申请号：JP2006200827
申请日：2006-07-24
申请人： Japan Aerospace Exploration Agency , 独立行政法人宇宙航空研究開発機構
发明人： KINOSHITA KYOICHI , ADACHI SATOSHI , YODA SHINICHI
IPC分类号： C30B13/00 , C30B29/40
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a solid solution (mixed crystal) single crystal by which the solid solution (mixed crystal) single crystal can be grown with good reproducibility.
SOLUTION: A crystal is grown in such a state that a specific substance 208 for preventing movement of a melt in a molten zone, formed by melting a solid raw material 207, on the surface of the residual solid raw material 207 remaining unmelted is adhered on the surface of the solid raw material 207. Thereby, the movement of the melt to the residual solid raw material 207 from the molten zone by the movement of the melt on the surface of the residual solid raw material 207 remaining unmelted can be prevented. Consequently, the deformation of the shape of the molten zone and the deformation of the crystal growth interface caused by the deformation can be prevented. Thus, non-uniformization of a composition and polycrystallization during crystal growth that occur due to the deformation of the crystal growth interface, can be prevented.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以以良好的再现性生长固溶体（混合晶体）单晶的固溶体（混晶）单晶的制造方法。解决方案：晶体生长在这样一种状态，即用于防止在残留的固体原料207的表面上熔化固态原料207而形成的熔融区中的熔体的运动的特定物质208保持未熔化粘附在固体原料207的表面上。由此，通过熔体在剩余未固化的固体原料207的表面上的运动，熔融物从熔融区域向残余固体原料207的移动可以是预防。因此，可以防止熔融区的形状变形和由变形引起的晶体生长界面的变形。因此，可以防止由于晶体生长界面的变形而在晶体生长期间的组合物的非均匀化和多晶化。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2011169489A Variable-temperature-gradient multi-zone type electric furnace 审中-公开
标题翻译：可变温度梯级多区型电炉
公开(公告)号：JP2011169489A
公开(公告)日：2011-09-01
申请号：JP2010032159
申请日：2010-02-17
申请人： Japan Aerospace Exploration Agency , Matels Inc , 有限会社マテルズ , 独立行政法人宇宙航空研究開発機構
发明人： GOTO HIROHITO , YOSHIOKA HIROSHI , INABA SHIGEYUKI , KINOSHITA KYOICHI , YODA SHINICHI
IPC分类号： F27D11/02 , C30B11/00 , F27B14/14
摘要： PROBLEM TO BE SOLVED: To provide a variable-temperature-gradient multi-zone type electric furnace capable of changing a position of a heating element of a third zone which has been fixed heretofore, from the external.
SOLUTION: In this electric furnace including two or more heating elements in the so-called inner heat-type electric furnace having a heating section with the heating element and synthesizing a mono-crystal, a temperature distribution of the electric furnace can be changed by changing the position of the heating element as a heat source from the external.
COPYRIGHT: (C)2011,JPO&INPIT

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