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    • 7. 发明专利
    • MAN-MACHINE INTERFACE FOR PLANT
    • JPH02207303A
    • 1990-08-17
    • JP2747589
    • 1989-02-08
    • HITACHI LTD
    • OGA KOJINAGAOKA YUKIOSUZUKI SATORUITO TETSUO
    • G06F3/02G05B15/02G06F15/00
    • PURPOSE:To cope with various types of instructions by means of input sentences in various expressions by preparing data to which the relation between a standard sentence pattern and instruction contents is applied. CONSTITUTION:In an input sentence analyzing device 3, a morpheme/syntax analyzing part 31 recognizes words included in an input sentence in a natural language by means of an operator/maintenance crew by means of a morpheme/ syntax analysis, and an instruction contents fixing part 32 identifies the instruction contents with the use of the data to which the relation between the standard pattern prepared beforehand and the instruction contents is applied. Next, a necessary information acquiring part 35 uses an information item necessary for the instruction execution prepared beforehand and the data concerning an acquiring method, and acquires information necessary for the execution instruction by referring to the input sentence, an interactive history, etc. Further a corresponding part 34 to function/argument outputs the instruction contents and the acquired information by making them correspond to the function and argument value of each type of a program prepared in a process computer. Thus the input sentence in the various expressions including the omission of a postpositional word, substantive finish, etc. is coped with.
    • 9. 发明专利
    • MANUFACTURE OF SOLAR CELL
    • JPS6425487A
    • 1989-01-27
    • JP18104287
    • 1987-07-22
    • HITACHI LTD
    • SUZUKI SATORUMATSUKUMA KUNIHIROKOKUUCHI SHIGERUUCHIDA YASUAKIMORITA KEIICHI
    • H01L31/04
    • PURPOSE:To isolate a junction and to omit the step of forming an edge face in the manufacture of a P-N junction type solar cell in which a polycrystalline silicon wafer is used as a substrate by forming newly a P-N junction between a front surface electrode and a rear surface electrode. CONSTITUTION:A P-type polycrystalline silicon substrate 1 is employed (a), an N type layer 2 is formed to form a P-N junction 3 (b). Then, a rear surface electrode aluminum paste 4 and junction isolating aluminum paste 5 are simultaneously printed on the N type layer of the rear surface side (c). Then, a heat treatment is executed. The junction isolating aluminum is diffused with the paste 5 in the substrate by the heat treatment to form a P type layer 8, and a P-N junction 9 which operates as a junction isolation is formed. Simultaneously, the rear surface electrode aluminum paste 4 is also diffused in the substrate to become a rear surface aluminum electrode 7 (d). That is, the junction can be isolated simultaneously upon the formation of the rear surface electrode, thereby omitting the edge face forming step.