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1. 发明专利

JP2007211295A Film deposition unit having film deposition apparatus, and film deposition method using the film deposition unit 审中-公开
标题翻译：具有薄膜沉积装置的薄膜沉积单元和使用薄膜沉积单元的薄膜沉积方法
公开(公告)号：JP2007211295A
公开(公告)日：2007-08-23
申请号：JP2006032721
申请日：2006-02-09
申请人： Ishikawa Seisakusho Ltd , 株式会社石川製作所
发明人： MUROI SUSUMU , NIKI TOSHIICHI
IPC分类号： C23C14/00 , C23C16/44 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To considerably reduce the amount of dust in a film deposition chamber of a film deposition apparatus in a space-saving manner at low cost.
SOLUTION: A film deposition unit comprises a film deposition apparatus 10 for depositing a thin film on a material for film deposition in a film deposition chamber 11, a clean chamber 20 communicating with the film deposition chamber 11. An inlet 21 capable of introducing air therefrom is formed in the clean chamber 20, and an outlet 14 capable of discharging air is formed in the film deposition chamber 11.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：以低成本，以节省空间的方式大大减少了成膜装置的成膜室中的粉尘量。解决方案：膜沉积单元包括用于在成膜室11中的薄膜沉积材料上沉积薄膜的成膜装置10，与成膜室11连通的清洁室20。在清洁室20内形成有空气，在成膜室11内形成能够排出空气的出口14.（C）2007，JPO＆INPIT

2. 发明专利

JP2006005066A Method and apparatus for depositing 有权
标题翻译：沉积方法和装置
公开(公告)号：JP2006005066A
公开(公告)日：2006-01-05
申请号：JP2004178235
申请日：2004-06-16
申请人： Ishikawa Seisakusho Ltd , Japan Science & Technology Agency , Toshiichi Niki , 敏一仁木 , 株式会社石川製作所 , 独立行政法人科学技術振興機構
发明人： MUROI SUSUMU , NIKI TOSHIICHI
IPC分类号： H01L21/318 , C23C16/44 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To aim at the coexistence with the suppressing of the temperature rise of the material to be deposited and high speed film depositing.
SOLUTION: A positioning apparatus forms a thin film on the material 3 to be deposited installed in a vacuum container 2. The positioning apparatus includes a catalytic element 5 for activating the part of a material gas, a first gas supply means 6 for introducing the part of the material gas to be contacted with the catalytic element 5, and a second gas supply means 7 for introducing directly the part of the material gas to a space between the catalytic element and the material to be deposited. At least the part of the material gas is activated by the catalytic element 5. The residual material gas is activated by the activated material gas to depositing species, and a thin film is deposited on the material 4 to be deposited.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：旨在与待沉积的材料的温度升高的抑制和高速膜沉积共存。解决方案：定位装置在要沉积的材料3上形成薄膜，安装在真空容器2中。定位装置包括用于启动材料气体的一部分的催化元件5，第一气体供应装置6，引入与催化元件5接触的材料气体的一部分;以及第二气体供给装置7，用于将材料气体的一部分直接引入催化元件和待沉积材料之间的空间。至少部分原料气体被催化元件5活化。剩余的原料气体被活性物质气体活化以沉积物质，并且薄膜沉积在待沉积的材料4上。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2004292877A Silicon nitride film and method for manufacturing the same 有权
公开(公告)号：JP2004292877A
公开(公告)日：2004-10-21
申请号：JP2003085721
申请日：2003-03-26
申请人： Ishikawa Pref Gov , Ishikawa Seisakusho Ltd , Japan Advanced Inst Of Science & Technology Hokuriku , Japan Science & Technology Agency , Toshiichi Niki , 敏一仁木 , 北陸先端科学技術大学院大学長 , 株式会社石川製作所 , 独立行政法人科学技術振興機構 , 石川県
发明人： NAMIKAWA TOSHIHARU , BUKE AKIRA , KOIZUMI AKIO , MUROI SUSUMU , MASUDA ATSUSHI , UMEMOTO HIRONOBU , MATSUMURA HIDEKI , NIKI TOSHIICHI
IPC分类号： B32B9/00 , C01B21/06 , C23C16/42 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a silicon nitride film which has a high barrier property, transparency and an excellent adhesion property and a manufacturing method for high-speed deposition at a low temperature.
SOLUTION: The silicon nitride film is deposited by a chemical vapor deposition method, more particularly a catalytic CVD method. The film is deposited at a substrate temperature ≤160°C and the composition thereof, when expressed as SiN
x , is 1.05≤x≤1.33, the refractive index is 1.8 to 1.96. NH bonds exist in the film. At the time of the deposition, monosilane, ammonia and hydrogen are supplied, are catalytically decomposed by an electrically heated wire and are deposited on a substrate of ≤160°C. At this time, the flow rate ratios of the monosilane, the ammonia and the hydrogen are so specified that the ammonia is 1 to 30, and the hydrogen is 5 to 400 to 1 monosilane.
COPYRIGHT: (C)2005,JPO&NCIPI

4. 发明专利

JP2010159450A Support structure of catalyst body in catalytic chemical vapor-deposition apparatus 有权
标题翻译：催化化学蒸气沉积装置中催化体的支撑结构
公开(公告)号：JP2010159450A
公开(公告)日：2010-07-22
申请号：JP2009001520
申请日：2009-01-07
申请人： Ishikawa Seisakusho Ltd , 株式会社石川製作所
发明人： NIKI TOSHIICHI
IPC分类号： C23C16/44 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a support structure of catalyst body in a catalytic chemical vapor-deposition apparatus achieving the long-term repetitive use of the catalyst body by preventing film adhesion on a holding member for holding the catalyst body.
SOLUTION: A adhesion-preventive unit 1 is divided into an upper member 1a and a lower member 1b in the direction substantially orthogonal to the axis of a catalyst body 4 with a part in a vicinity of the axis of the catalyst body 4 being a border. Consequently, a holding member 20 and the adhesion-preventive unit 1 are detachably suitable for a column support 130 of a catalytic chemical vapor-deposition apparatus in a non-contact manner with the catalyst body 4.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了在催化化学气相沉积设备中提供催化剂体的支撑结构，通过防止在用于保持催化剂体的保持构件上的膜粘附而实现催化剂体的长期重复使用。解决方案：粘合防止单元1沿着与催化剂体4的轴线大致正交的方向分成上部构件1a和下部构件1b，其中部分在催化剂体4的轴线附近作为边界因此，保持构件20和防粘接单元1以与催化剂体4非接触的方式可拆卸地适用于催化化学气相沉积装置的柱支撑件130.版权所有（C）2010 ，JPO＆INPIT

5. 发明专利

JP2010059468A Support structure of catalyst body in catalytic chemical vapor-deposition apparatus 有权
标题翻译：催化化学蒸气沉积装置中催化体的支撑结构
公开(公告)号：JP2010059468A
公开(公告)日：2010-03-18
申请号：JP2008225740
申请日：2008-09-03
申请人： Ishikawa Seisakusho Ltd , 株式会社石川製作所
发明人： NIKI TOSHIICHI
IPC分类号： C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a support structure of a catalyst body, which keeps its shape at a high temperature even if the length of the catalyst body of a catalytic chemical vapor-deposition apparatus is increased, and can endure cycles of heating and cooling.
SOLUTION: A support frame 1 of the catalyst body includes: a frame body 20 which suspends the catalyst body 4 of a predetermined shape in a tensed state; electroconductive metal fittings 50 which are arranged so as to face each other across the frame body 20 to grip the catalyst body 4 and form an electric circuit that energizes the catalyst body 4; and a spring 6 which pushes at least an electroconductive metal fitting 51A that is one of the electroconductive metal fittings facing each other, toward such a direction as to separate the electroconductive metal fitting 51A from the other electroconductive metal fitting 51B.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供催化剂体的支撑结构，即使催化化学气相沉积装置的催化剂体的长度增加也能使其形状保持在高温，并且可以承受加热和冷却。解决方案：催化剂体的支撑框架1包括：框架体20，其将预定形状的催化剂体4悬置在张紧状态; 导电金属配件50，其布置成相对于框体20彼此面对，以夹持催化剂体4并形成使催化剂体4通电的电路; 以及弹簧6，其将至少一个导电金属配件51A推向面向彼此的导电金属配件之间，以将导电金属配件51A与另一个导电金属配件51B分离。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2000074257A Pressure excessive response preventing device 审中-公开
标题翻译：压力过高的预防措施
公开(公告)号：JP2000074257A
公开(公告)日：2000-03-14
申请号：JP25752998
申请日：1998-08-26
申请人： Hidenobu Hori , Ishikawa Seisakusho Ltd , Tadaoki Mitani , Nikkiso Co Ltd , 三谷忠興 , 秀信堀 , 日機装株式会社 , 株式会社石川製作所
发明人： MITANI TADAOKI , HORI HIDENOBU , NIKI TOSHIICHI , HABU YOSHIHIKO , CHIBA TOSHIAKI
IPC分类号： F16K21/00 , F16K47/14 , F16L55/04 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a device without a transient response obtaining sufficient performance and eliminating a reverse flow relating to chemicals of acid, alkali, etc., by constituting the transient response of pressure in the chemicals due to opening/closing of a valve so as to be prevented by elastic deformation of a hollow fiber in a housing. SOLUTION: Many hollow fibers 6 having a fine hole in an outer peripheral surface and having a prescribed length and a fine internal diameter are stored in a housing 8 by fixing left/right end parts thereof. The housing 8, formed in cylindrical shape, is constituted by a lower part communicating with a hollow pipe 2b, left side surface communicating with a hollow pipe 2c, and an upper part communicating with a discharge pipe 10. Since a developing solution is delivered onto a wafer from a nozzle with chemicals passing in the hollow fiber from the fine hole of the hollow fiber outer peripheral surface in the housing, a transient response in the chemicals due to opening/closing of a valve is absorbed by elastic deformation of the hollow fiber, generation of bubbles in the vicinity of the valve is prevented, and a shock generated in the pipe can be relaxed.
摘要翻译：要解决的问题：通过构成由于阀的打开/关闭而导致的化学品中的压力的瞬态响应，提供一种没有瞬态响应的装置，获得足够的性能并消除与酸，碱等化学物质相反的逆流以防止壳体中的中空纤维的弹性变形。解决方案：在外周表面具有细孔并且具有规定长度和细内径的许多中空纤维6通过固定其左/右端部而被保存在壳体8中。形成为圆筒状的壳体8由与中空管2b连通的下部，与中空管2c连通的左侧面和与排出管10连通的上部构成。由于显影液被输送到来自喷嘴的晶片，其中化学品从壳体中空纤维外周表面的细孔穿过中空纤维，由于阀的打开/关闭而导致的化学品中的瞬态响应被中空纤维的弹性变形吸收能够防止在阀附近产生气泡，能够缓和管内的冲击。

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