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1. 发明专利

JP2007303946A Sample analyzer and sample analyzing method 有权
标题翻译：样品分析仪和样品分析方法
公开(公告)号：JP2007303946A
公开(公告)日：2007-11-22
申请号：JP2006132084
申请日：2006-05-11
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ONO SHIANO , TAKAGUCHI MASANARI , TOKIDA RURIKO
IPC分类号： G01N23/225 , G01N1/28 , G01R31/302 , H01J37/20
CPC分类号： H01J37/28 , G01R31/307 , H01J37/04 , H01J37/20 , H01J37/3056 , H01J2237/2008 , H01J2237/24564 , H01J2237/2594 , H01J2237/2802 , H01J2237/31745 , H01J2237/31749
摘要： PROBLEM TO BE SOLVED: To provide a method corresponding to the subject related to a sample holding stand, sample pretreatment and a sample holder for analyzing a structure, a composition and an electronic state in a device operated state by applying external voltage to a sample to be observed in a sample analyzer inclusive of a transmission electron microscope, and a sample analyzing method.
SOLUTION: The sample analyzer includes the sample holding stand (mesh) including the first wiring structure capable of being connected to the external voltage applying place of the sample and the sample holder including the second wiring structure, which can be connected to the first wiring structure, and a current introducing terminal. The sample holding stand capable of analyzing the structure, the composition and the electronic state by applying voltage to the external voltage applying place of the sample to be observed or allowing a current to flow to the external voltage applying place through the second and first wiring structure, a sample pretreatment method and the sample analyzing method are also provided.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供对应于与样品保持架，样品预处理和样品保持器相关的主题的方法，用于通过施加外部电压来分析设备操作状态下的结构，组成和电子状态在包含透射电子显微镜的样品分析仪中观察的样品和样品分析方法。解决方案：样品分析仪包括样品保持架（网孔），其包括能够连接到样品的外部电压施加位置的第一布线结构和包括第二布线结构的样品架，其可以连接到第一布线结构和电流引入端子。所述样品保持架能够通过对待观察的样品的外部电压施加位置施加电压或者允许电流通过第二和第一布线结构流到外部施加电压的位置来分析结构，组成和电子状态，还提供了样品预处理方法和样品分析方法。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2009129799A Scanning transmission type electron microscope 审中-公开
标题翻译：扫描传输型电子显微镜
公开(公告)号：JP2009129799A
公开(公告)日：2009-06-11
申请号：JP2007305380
申请日：2007-11-27
申请人： Hitachi Ltd , Murata Mfg Co Ltd , 株式会社日立製作所 , 株式会社村田製作所
发明人： MATSUMOTO TAKAO , TAKAGUCHI MASANARI , WADA NOBUYUKI
IPC分类号： H01J37/26 , H01J37/20
摘要： PROBLEM TO BE SOLVED: To provide a scanning transmission type electron microscope capable of stably observing a clear image which is reproducible at high magnification.
SOLUTION: An electric charge locally charged on the surface of the sample 5 is quickly moved by a converged electron beam by mounting electrodes 13-16 as an electric field application mechanism in which an electric field 6 having a component along the surface of the sample 5 in an arbitrary direction is applied to the sample 5 and by using the electric field application mechanism to apply the electric field. Furthermore, electron swing-back mechanisms 17-20 are arranged in order to compensate movement of the spot center of an electron beam 8 from the center of a detector 10 caused by this electric field.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够稳定地观察高倍率可再现的清晰图像的扫描透射型电子显微镜。解决方案：通过安装电极13-16作为电场施加机构，通过会聚的电子束快速地移动样品5的表面上的电荷，其中具有沿着表面的部件的电场6 将样品5以任意方向施加到样品5上，并通过使用电场施加机构施加电场。此外，电子摆动机构17-20被布置以补偿电子束8的光斑中心从由该电场引起的检测器10的中心的移动。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008135396A Sample forming device for three-dimensional structure observation, electron microscope, and its method 有权
标题翻译：三维结构观察样品成型装置，电子显微镜及其方法
公开(公告)号：JP2008135396A
公开(公告)日：2008-06-12
申请号：JP2007322720
申请日：2007-12-14
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TOKIDA RURIKO , KAKIBAYASHI HIROSHI , TAKAGUCHI MASANARI , NAKAMURA KUNIYASU
IPC分类号： H01J37/20 , G01N1/28 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To provide a sample forming device for an electron microscope for observing a three-dimensional structure of a desired part in a minutely processed semiconductor device.
SOLUTION: With the use of a dicer for processing a sample piece 10, and the use of a focused ion beam process for forming a part to make a protruded shape as an observing object on the sample piece, the sample piece 10 is fixed onto the one-axis omnidirectional leaning sample holder with a center axis of a protrusion 11 matched with a sample leaning axis Z. By using a TEM image formed by electrons scattered in high angles as a projection image, reconstitution is carried out.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种电子显微镜的样品形成装置，用于观察精细加工的半导体器件中所需部分的三维结构。解决方案：通过使用用于处理样品10的切片机，以及使用聚焦离子束工艺来形成部件以使样品上的观察对象呈凸形，样品10为固定在具有与样本倾斜轴线Z匹配的突起11的中心轴的单轴全向倾斜样品架上。通过使用由大角度散射的电子形成的TEM图像作为投影图像，进行重构。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2005043382A Sample preparing device for observing three-dimensional structure, electron microscope, and method thereof 有权
标题翻译：用于观察三维结构的样品制备装置，电子显微镜及其方法
公开(公告)号：JP2005043382A
公开(公告)日：2005-02-17
申请号：JP2004329947
申请日：2004-11-15
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TOKIDA RURIKO , KAKIBAYASHI HIROSHI , TAKAGUCHI MASANARI , NAKAMURA KUNIYASU
IPC分类号： G01N23/04 , G01N1/28 , G01N1/32 , G01N23/225 , G01N27/62
摘要： PROBLEM TO BE SOLVED: To provide a sample preparing device for electron microscopes for observing a three-dimensional structure at a desired place in a finely machined semiconductor device, and to provide an electron microscope and its method. SOLUTION: A dicer is used for machining a sample piece 10; focusing ion beam machining is used in machining for scraping a portion to be observed on the sample piece in a projecting shape; the sample piece 10 is fixed to a uniaxial omnidirectional inclination sample holder by allowing the center axis of a projection 11 to coincide with a sample inclination axis Z; and a TEM image formed by electrons scattered at a high angle is used as a projection image for reconfiguration. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于在精细加工的半导体器件中的所需位置观察三维结构的电子显微镜的样品制备装置，并提供电子显微镜及其方法。解决方案：切片机用于加工样品10; 聚焦离子束加工被用于以突出形状刮取样品上要观察的部分的机械加工; 通过允许突起11的中心轴线与试样倾斜轴线Z一致，将样品片10固定在单轴全向倾斜试样支架上; 并且使用由高角散射的电子形成的TEM图像作为用于重新配置的投影图像。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2004301852A Device for manufacturing sample for observing three-dimensional structure, electron microscope and sample manufacturing method using the device 审中-公开
公开(公告)号：JP2004301852A
公开(公告)日：2004-10-28
申请号：JP2004166547
申请日：2004-06-04
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TOKIDA RURIKO , KAKIBAYASHI HIROSHI , TAKAGUCHI MASANARI , NAKAMURA KUNIYASU
IPC分类号： G01N23/04 , G01N1/28 , H01J37/20 , H01J37/22 , H01J37/26 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To provide a sample manufacturing device for an electron microscope for observing the three-dimensional structure of a desired place in a finely processed semiconductor device, and to provide the electron microscope and its method. SOLUTION: A dicer is used for processing a sample piece 10 and converged ion beam processing is used in processing for shaving off the part to be observed of the sample piece 10 into a projected shape. The sample piece 10 is fixed to an uniaxial ominidirectionally inclined sample holder so that the center axis of the projection 11 formed coincides with the inclined axis Z of the sample piece and a TEM image formed by electrons scattered at a high angle is used as a projection image to perform reconstitution. COPYRIGHT: (C)2005,JPO&NCIPI

6. 发明专利

JP2012220337A Analyzer for charged particle beam and analytical method therefor 有权
标题翻译：充电颗粒分析仪及其分析方法
公开(公告)号：JP2012220337A
公开(公告)日：2012-11-12
申请号：JP2011086286
申请日：2011-04-08
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ANAMI YOSHIHIRO , TAKAGUCHI MASANARI
IPC分类号： G01N23/225
CPC分类号： H01J37/228 , H01J37/244 , H01J37/28 , H01J2237/024 , H01J2237/2445 , H01J2237/24485
摘要： PROBLEM TO BE SOLVED: To provide an analyzer for a charged particle beam, which can perform analysis with high efficiency and sensitivity in a micro region regardless of energy intensity of an X-ray.SOLUTION: An analyzer for a charged particle beam 4, which applies a charged particle beam 17 to a specimen 14 in vacuum vessels (5, 6) and analyzes the specimen 14 by detecting an X-ray 3 generated from the specimen 14 by an X-ray detector 28, includes two or more of X-ray lenses (1a, 1b) differing in structure in the vacuum vessels (5, 6). Pressure release and vacuuming of the vacuum vessels associated with replacement of the X-ray lenses are no longer required, and it becomes possible to perform analysis with high efficiency and sensitivity.
摘要翻译：要解决的问题：提供一种用于带电粒子束的分析器，其可以在微区域中以高效率和灵敏度进行分析，而与X射线的能量强度无关。解决方案：一种用于带电粒子束4的分析器，其将带电粒子束17施加到真空容器（5,6）中的样本14上，并通过检测从样本14产生的X射线3来分析样本14 通过X射线检测器28包括在真空容器（5,6）中结构不同的两个或更多个X射线透镜（1a，1b）。不再需要与更换X射线透镜相关联的真空容器的压力释放和抽真空，并且可以以高效率和灵敏度进行分析。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2006153894A Observation apparatus and method using electron beam 有权
标题翻译：观察装置和使用电子束的方法
公开(公告)号：JP2006153894A
公开(公告)日：2006-06-15
申请号：JP2006058855
申请日：2006-03-06
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TAKAGUCHI MASANARI , NAKAMURA KUNIYASU , UMEMURA KAORU , TANIGUCHI YOSHIFUMI , ICHIHASHI MIKIO
IPC分类号： G01N23/20 , H01J37/28
摘要： PROBLEM TO BE SOLVED: To provide an apparatus, a technique, and a method for two-dimensional distributions and measuring distortions and stress, having nanometer resolution of each type of crystal sample through the use of diffraction images observed by an electronic microscope.
SOLUTION: Electron beams are irradiated in minute amount and in parallel to a sample. The distances, between the spots of a diffraction image reflecting a crystal structure acquired by the irradiation, are measured by an image detector or a position detector. A two-dimensional stress distribution is superimposed on the measured positional information and displayed on an enlarged image of an electronic microscope. Distortions and stresses in minute crystals can be displayed at a high resolution and at a high speed in matching structural information of the sample.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于二维分布和测量失真和应力的装置，技术和方法，通过使用电子显微镜观察到的衍射图像，具有每种类型的晶体样品的纳米分辨率。解决方案：电子束以微量和平行于样品照射。通过图像检测器或位置检测器测量反射通过照射获得的晶体结构的衍射图像的光点之间的距离。将二维应力分布叠加在所测量的位置信息上并显示在电子显微镜的放大图像上。微分晶体中的变形和应力可以以高分辨率和高速显示，以匹配样品的结构信息。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2004301851A Device for manufacturing sample for observing three-dimensional structure, electron microscope and sample manufacturing method using the device 审中-公开
公开(公告)号：JP2004301851A
公开(公告)日：2004-10-28
申请号：JP2004166546
申请日：2004-06-04
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TOKIDA RURIKO , KAKIBAYASHI HIROSHI , TAKAGUCHI MASANARI , NAKAMURA KUNIYASU
IPC分类号： G01N23/04 , G01N1/28 , G01N1/32 , H01J37/20 , H01J37/22 , H01J37/26 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To provide a sample manufacturing device for an electron microscope for observing the three-dimensional structure of a desired place in a finely processed semiconductor device, and to provide the electron microscope and a sample manufacturing method using the device. SOLUTION: A dicer is used for processing a sample piece 10 and converged ion beam processing is used in processing for shaving off the part to be observed of the sample piece 10 into a projected shape. The sample piece 10 is fixed to an uniaxial ominidirectionally inclined sample holder so that the center axis of the projection 11 formed coincides with the inclined axis Z of the sample piece and a TEM image formed by electrons scattered at a high angle is used as a projection image to perform reconstitution. COPYRIGHT: (C)2005,JPO&NCIPI

9. 发明专利

JP2013213748A Inner structure inspection device and inner structure monitoring system 审中-公开
标题翻译：内部结构检查装置和内部结构监测系统
公开(公告)号：JP2013213748A
公开(公告)日：2013-10-17
申请号：JP2012084434
申请日：2012-04-03
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MATSUI MIYAKO , ARAMAKI KOJI , TAKAGUCHI MASANARI
IPC分类号： G01N23/02
摘要： PROBLEM TO BE SOLVED: To provide a device acquiring information on a state of an inner structure of facilities such as chemical plants and nuclear power plants, and a system for monitoring the state of the plant facilities using the device.SOLUTION: The inner structure inspection device inspects an intricate and complicated structure assembly in which a measuring object and a non-measuring object are mixedly present, using natural radiation pouring from the sky is defined as a radiation source. The inner structure inspection device has a configuration that detectors are arranged such that the natural radiation passes through two-step detectors before the natural radiation enters a measuring object, and a third detector detects a part of the natural radiation passed through the measuring object. The inner structure inspection device has a function to detect a fluctuation component of the natural radiation that enters a first structure via the non-measuring object from signals detected by the first and second detectors. The inner structure inspection device further calculates an index value of the inner structure of the measuring object from the signals detected by the first, second, and third detectors to measure a change in the inner structure of the measuring object.
摘要翻译：要解决的问题：提供一种获取关于化学工厂和核电站等设施的内部结构的状态的信息的装置，以及使用该装置监视设备状态的系统。解决方案：内部结构检查设备检查混合地存在测量对象和非测量对象的错综复杂的结构组件，使用从天空倾倒的自然辐射被定义为辐射源。内部结构检查装置具有以下结构：检测器被布置成使得自然辐射在自然辐射进入测量对象之前通过两步检测器，并且第三检测器检测通过测量对象的自然辐射的一部分。内部结构检查装置具有通过第一和第二检测器检测到的信号，经由非测量物体检测进入第一结构的自然辐射的波动分量的功能。内部结构检查装置还根据由第一，第二和第三检测器检测的信号计算测量对象的内部结构的指标值，以测量测量对象的内部结构的变化。

10. 发明专利

JP2008262921A Three-dimensional structure observation sample formation device, electron microscope, and its method 审中-公开
标题翻译：三维结构观察样品形成装置，电子显微镜及其方法
公开(公告)号：JP2008262921A
公开(公告)日：2008-10-30
申请号：JP2008182177
申请日：2008-07-14
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TOKIDA RURIKO , KAKIBAYASHI HIROSHI , TAKAGUCHI MASANARI , NAKAMURA KUNIYASU
IPC分类号： H01J37/20
摘要： PROBLEM TO BE SOLVED: To provide an electron microscope sample formation device for observing a three-dimensional structure of a desired portion in a semiconductor device machined finely, and an electron microscope and its method.
SOLUTION: The sample formation device uses a dicer for machining of a sample piece 10, and uses a focusing ion beam processing for process of cutting out the portion of observation subject on the sample piece in a projection shape, and fixes the sample piece 10 on a single-axis omnidirectional leaning sample holder by making the center axis of the projection 11 and the sample leaning axis Z coincide, and uses the TEM image formed by electrons diffused in high angles to make a reconstruction of the image structure.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种用于观察精细加工的半导体器件中所需部分的三维结构的电子显微镜样品形成装置和电子显微镜及其方法。解决方案：样品形成装置使用切片机来加工样品10，并且使用聚焦离子束处理来将样品上的观察对象部分切割成投影形状，并将样品通过使突起11的中心轴和样品倾斜轴Z重合，在单轴全向倾斜试样保持器上使用由高度扩散的电子形成的TEM图像来重构图像结构。版权所有（C）2009，JPO＆INPIT

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