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    • 10. 发明专利
    • HIGH INTEGRATED SEMICONDUCTOR DEVICE
    • JPH04280667A
    • 1992-10-06
    • JP4389191
    • 1991-03-08
    • HITACHI LTDHITACHI TOBU SEMICONDUCTOR LTD
    • NAKAJIMA KOICHIENDO TSUNEO
    • H01L25/18H01L25/10H01L25/11H05K1/14H05K3/36
    • PURPOSE:To obtain a high integrated semiconductor device which is hardly enlarged in size even if semiconductor chips are increased in number by a method wherein wiring boards are arranged nearly in parallel at prescribed intervals, which are assembled into a multiboard structure with a single lead wire. CONSTITUTION:A chip 1 is mounted on a wiring board 2 through the intermediary of adhesive agent or the like, a wiring pattern 3 is provided onto the upside of the board 2, and the front and the rear of the board 2 are electrically connected together to constitute a rigid wiring board. For instance, the rear and the front of a printed board are electrically connected together through a through-hole wiring 4, and the through-hole wirings 4 are connected to the terminals provided onto the chip 1 through a wiring pattern 3 and a bonding wire 5 of the board 2. Solderable lands 4A are formed around the through-hole wirings 4 provided to the front and the rear of the board 2, a solder guide line 4B formed of the same material with the wiring is provided extending from a part near the end of the board 2 to the land 4A, a lead wire 7 and the land 4A are surely soldered to each other even if the gap is narrow.