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1. 发明专利

JP2007053386A Ion implantation method and its device 有权
标题翻译：离子植入方法及其装置
公开(公告)号：JP2007053386A
公开(公告)日：2007-03-01
申请号：JP2006222882
申请日：2006-08-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： UMEMURA KAORU , KAWANAMI YOSHIMI , KATO MASATAKA , MADOKORO YUICHI , KURODA KATSUHIRO , HAYATA YASUNARI
IPC分类号： H01L21/265 , H01J37/28 , H01J37/317 , H01L21/266 , H01L21/8238 , H01L21/8242 , H01L27/092 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To reduce the number of manufacturing processes for a semiconductor device by eliminating resist processes before and after an ion implantation process. SOLUTION: In this ion implantation method, ions emitted from an ion source are made to pass through a mask 2 having an opening figure similar to a desired ion implantation region to form a pattern ion beam 4, and the ion beam is projected to the desired region of a wafer 7 with no resist applied, to introduce the ions. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过消除离子注入工艺之前和之后的抗蚀剂工艺来减少半导体器件的制造工艺的数量。解决方案：在该离子注入方法中，使从离子源发射的离子通过具有类似于期望的离子注入区的开口图案的掩模2以形成图案离子束4，并且离子束被投影到没有施加抗蚀剂的晶片7的期望区域，以引入离子。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2006084484A Sample preparation method 有权
标题翻译：样品制备方法
公开(公告)号：JP2006084484A
公开(公告)日：2006-03-30
申请号：JP2005363394
申请日：2005-12-16
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： UMEMURA KAORU , MADOKORO YUICHI , TOMIMATSU SATOSHI
IPC分类号： G01N1/28
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for preparing a thin piece sample which accurately position a desired observation region in a sample substrate, without finely separating the sample substrate, and easily prepare a planar sample with regard to a region, at an arbitrary depth from the surface of the sample substrate. SOLUTION: The sample has a thin piece observing section, and is prepared by a sample piece extracting process of forming and intersecting a groove 6 perpendicular to the surface of the substrate and a groove 8 inclined to the surface of the substrate by irradiating the sample substrate 1 with a focused ion beam 4, and extracting a wedge sample piece 9, a process of fixing the extracted sample piece 9 on a sample holder 12, and a process of forming a thin wall 18, including the desired observation region and parallel to the surface 15 of the sample substrate 1 by irradiating the focused ion beam 4. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种制备薄片样品的方法和装置，其将样品基板中期望的观察区域准确地定位，而不会精细地分离样品基板，并且可以容易地制备关于区域，距离样品基板的表面任意深度。解决方案：样品具有薄片观察部分，并且通过样品片提取处理来制备，该样品片提取处理与垂直于基底表面的凹槽6成形和相交，并且通过照射具有聚焦离子束4的样品基板1，并且提取楔形样品9，将提取的样品9固定在样品保持器12上的处理以及形成包括所需观察区域的薄壁18的工艺，以及通过照射聚焦离子束4平行于样品基片1的表面15.版权所有：（C）2006，JPO＆NCIPI

3. 发明专利

JP2006108697A Ion implantation method and device thereof 审中-公开
标题翻译：离子植入方法及其装置
公开(公告)号：JP2006108697A
公开(公告)日：2006-04-20
申请号：JP2005320313
申请日：2005-11-04
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： UMEMURA KAORU , MADOKORO YUICHI , KAWANAMI YOSHIMI
IPC分类号： H01L21/265 , H01J37/317 , H01L21/266
摘要： PROBLEM TO BE SOLVED: To provide a new resistless ion implantation method, capable of reducing the number of processes, particularly, in and around ion implantation process, for the purpose of reducing the manufacturing cost by the compression of the process for manufacturing a semiconductor device, and to provide a device for realizing this method.
SOLUTION: A resistless ion implantation method is provided, wherein the ions emitted from an ion source are passed through a mask that has an aperture having substantially analogous form to a required ion implanting region for forming a molded ion beam; and this ion beam is radiated to the required regions of a wafer that have not been subjected to application of resist for implanting the ions to the wafer; and by using this wafer, ions is implanted.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种新的无电阻离子注入方法，能够减少特别是在离子注入过程中和周围的工艺数量，以通过压制制造方法来降低制造成本半导体器件，并且提供用于实现该方法的器件。解决方案：提供一种无电阻离子注入方法，其中从离子源发射的离子通过掩模，该掩模具有与所需离子注入区域基本相似的形式的孔，用于形成模制的离子束; 并且该离子束辐射到未经过抗蚀剂的晶片的所需区域，以将离子注入晶片; 并且通过使用该晶片，植入离子。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2007042655A Ion injection method and its device 有权
标题翻译：离子注射方法及其装置
公开(公告)号：JP2007042655A
公开(公告)日：2007-02-15
申请号：JP2006222881
申请日：2006-08-18
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： UMEMURA KAORU , KAWANAMI YOSHIMI , KATO MASATAKA , MADOKORO YUICHI , KURODA KATSUHIRO , HAYATA YASUNARI
IPC分类号： H01J37/317 , H01L21/265 , H01L21/8238 , H01L21/8242 , H01L27/092 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide an ion injection method which does not require a resist application process before and after the ion injection process and can reduce the number of manufacturing processes of a semiconductor device. SOLUTION: In the ion injection method, ions emitted from an ion source is made to pass through a mask having nearly similar apertures to the desired ion injection region, and pattern ion beams are formed; and these ion beams are projected on the desired region of wafer on which the resist is not coated, and the ions are introduced. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种离子注入方法，其在离子注入过程之前和之后不需要抗蚀剂施加工艺，并且可以减少半导体器件的制造工艺的数量。解决方案：在离子注入方法中，使离子源发射的离子通过具有与所需离子注入区域几乎相似孔径的掩模，形成图案离子束; 并且将这些离子束投影到其上未涂覆抗蚀剂的晶片的期望区域上，并且引入离子。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JPH09283039A FOCUSING ION BEAM DEVICE 失效
公开(公告)号：JPH09283039A
公开(公告)日：1997-10-31
申请号：JP9382596
申请日：1996-04-16
申请人： HITACHI LTD
发明人： MADOKORO YUICHI , KAWANAMI YOSHIMI , UMEMURA KAORU
IPC分类号： G03F1/00 , H01J27/02 , H01J27/26 , H01J37/08 , H01L21/027 , H01L21/302
摘要： PROBLEM TO BE SOLVED: To accurately measure the extracted current and improve the beam focusing property, machining accuracy, and machining efficiency by specifying the inner face shape of the extracting electrode of a liquid metal ion source. SOLUTION: The inner face shape of the extracting electrode 12 of a liquid metal ion source is made a conical surface having the opening angle of 10-70 deg. at the tip of the emitter 11 of the liquid metal ion source used as an apex. An electric circuit keeping the potential of the extracting electrode 12 negative against an aperture 13 is provided.

6. 发明专利

JPH09186138A ION BEAM PROCESSING APPARATUS 失效
公开(公告)号：JPH09186138A
公开(公告)日：1997-07-15
申请号：JP49096
申请日：1996-01-08
申请人： HITACHI LTD
发明人： MADOKORO YUICHI , KAWANAMI YOSHIMI , ISHITANI TORU , UMEMURA KAORU
IPC分类号： H01L21/302 , B81C1/00 , H01L21/027 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an ion beam processing apparatus with minute formation and high speed in manufacturing, by provide a switching mechanism between a focusing beam for observing a workpiece and a large current beam for manufacturing the workpiece. SOLUTION: A gallium metallic ion source is used as an ion source 1, and an ion beam processing apparatus includes Butler type two-stage electrostatic Einzel lenses 43 and 44, beam deflectors 5 and 8, a stencil mask 6, and a workpiece stage 10. In addition, control unit 45 switches automatically two modes between an observation mode by a focusing beam and a manufacturing mode by a formation beam. Each setting voltage of beam radiation is entered and stored in the control unit 45. An aperture drive mechanism 46 is so controlled that setting is made automatically when these beam are changed. As a result, adjustment at beam change is simplified and efficiency in operation can be improved.

7. 发明专利

JPH08162389A METHOD AND DEVICE FOR CHARGED PARTICLE BEAM PROJECTION 失效
公开(公告)号：JPH08162389A
公开(公告)日：1996-06-21
申请号：JP30181494
申请日：1994-12-06
申请人： HITACHI LTD
发明人： UMEMURA KAORU , KAWANAMI YOSHIMI , MADOKORO YUICHI
IPC分类号： H01J37/09 , H01J37/147 , H01J37/305 , H01J37/317 , H01L21/027
摘要： PURPOSE: To provide a method and device for projecting a charged particle beam onto a ring-shaped region provided with an island-like shielding region where a stencil mask is used. CONSTITUTION: A charged particle irradiation device is equipped with a charged particle source 1, a mask stage which holds a stencil mask 4, a specimen stage which holds a specimen 7, a charged particle irradiation optical system which irradiates the stencil mask 4 with a charged particle beam, and a charged particle projection optical system which projects the pattern of the stencil mask 4 onto the specimen 7, wherein deflectors 20 and 21 which deflect a charged particle beam in trajectory are provided after the stencil mask 4.

8. 发明专利

JPH07320670A PROCESSING METHOD AND DEVICE USING FOCUSED ION BEAM GENERATING MEANS 失效
公开(公告)号：JPH07320670A
公开(公告)日：1995-12-08
申请号：JP3556994
申请日：1994-03-07
申请人： HITACHI LTD
发明人： MIZUMURA MICHINOBU , UMEMURA KAORU , KAWANAMI YOSHIMI , MADOKORO YUICHI , ITO FUMIKAZU , HAMAMURA YUICHI , AZUMA JUNZO , SHIMASE AKIRA , KAMIMURA TAKASHI
IPC分类号： H01J27/18 , H01J37/08 , H01J37/30 , H01J37/317 , H01L21/265
摘要： PURPOSE:To enable the fine processing, fine film forming, and analysis of a specified point of a sample by irradiating a sample with the ion beam formed by focusing a specified ion, and processing the sample without hindering the electrical characteristic of the sample. CONSTITUTION:Micro wave is made to enter a 1/4 wave length resonance type semi- coaxial resonator 2, which is provided with a quartz glass tube 7 sealed with the inert gas, through a micro wave incident coaxial passage 1. Simultaneously, a wave length adjusting screw 3 is adjusted so as to supply the micro wave power to the resonator 2 in the maximum supplying condition, and the inert gas is ionized so as to generate the plasma 8, and the electromagnetic wave generated by a magnetism generating device 9 is made to enter so as to generate the high-density plasma. This plasma is withdrawn between a withdrawing electrode 4 and an accelerating electrode 5, and discharged from an electron discharging source 12, and a magnetic field is generated by an exciting coil 11, and this plasma is accelerated by the accelerating electrode 5 so as to obtain the focused ion beam 20. A sample 18 is irradiated with this ion beam 20 through three electrode lenses 14, astigmator electrode 15 and a deflector electrode 16.

9. 发明专利

JPH07296764A ION IMPLANTING METHOD, AND DEVICE THEREFOR 失效
公开(公告)号：JPH07296764A
公开(公告)日：1995-11-10
申请号：JP8939994
申请日：1994-04-27
申请人： HITACHI LTD
发明人： UMEMURA KAORU , MADOKORO YUICHI , KAWANAMI YOSHIMI
IPC分类号： C23C14/48 , G03F7/20 , H01J37/05 , H01J37/08 , H01J37/09 , H01J37/18 , H01J37/317 , H01L21/265 , H01L21/266
摘要： PURPOSE:To provide a new resistless ion implanting method capable of reducing processes, particularly, in and around ion implanting process, for the purpose of a reduction in manufacturing cost by the compression of the process for manufacturing a semiconductor device, and a device for realizing this method. CONSTITUTION:The ion 4 emitted from an ion source 2 is passed through a mask 9 having an aperture substantially having an analogous form to a required ion implanting area to form a molded ion beam 11, and this ion beam is emitted to a required area of a wafer 16 having no application of a resist to implant the ion to the wafer. According to this method, the process for manufacturing a semiconductor device is reduced, and a reduction in manufacturing cost of the semiconductor device can be attained.

10. 发明专利

JPH04127526A MANUFACTURE OF ELEMENT MODULE 失效
公开(公告)号：JPH04127526A
公开(公告)日：1992-04-28
申请号：JP24711090
申请日：1990-09-19
申请人： HITACHI LTD
发明人： MADOKORO YUICHI , TAKAHASHI YOSHIO
IPC分类号： C23C16/04 , C23C16/14 , C23C16/48 , H01L21/28 , H01L21/285
摘要： PURPOSE:To augment the yield of wiring connection between a module and a wiring substrate by a method wherein the terminal on the element module to be connected to outer circuit is formed using the metallic film position process by the selective chemical vapor deposition(CVD) process. CONSTITUTION:A metallic film 6 is formed on the terminal connection part of a module using the selective CVD process to avoid the direct beam irradiation of a substrate so that the contact resistance may be lowered by interposing the selective CVD metallic film 6 between the substrate 1 and a maskless formed wiring 7. That is, the connection part connects the impurity doped layer 4 of a module substrate 2 arranged on the wiring substrate 1 with an insulating film 3 formed thereon to a substrate wiring 8 by a wiring 7 between module/ wiring substrate through the CVD tungsten film 6 selectively deposited in the connecting hole of a module insulating film 5. In such a constitution, as for the selective CVD process, the mixed gas of hexatungsten fluoride with hydrogen or silane base gas is applicable while as for the maskless wiring formation process, the assisted deposition process using a focused ion beam or the CVD process using a laser beam or an electron beam is applicable.

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