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1. 发明专利

JP2001284360A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001284360A
公开(公告)日：2001-10-12
申请号：JP2000101195
申请日：2000-03-31
申请人： HITACHI LTD
发明人： NAKAJIMA TAKASHI , IWASAKI TOMIO , OTA HIROYUKI , MIURA HIDEO , NISHIHARA SHINJI , SAWARA MASASHI , YAMADA KENTARO , SUZUKI MASAYASU
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L21/8242 , H01L23/485 , H01L23/532 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a high-reliability semiconductor device where failure cases such as breaking of tungsten wirings, etc., in making the wiring width fine and even under a high-temperature process condition. SOLUTION: In a process of forming a first layer wiring 16A on a layer insulation film 9, a molybdenum film 16a having a lattice structure approximating tungsten and a low melting point is deposited thinly and in concave form, a tungsten film 16b is deposited to embed the concave and planarize the surface, and then a molybdenum film 16a is re-laminated.

2. 发明专利

JP2001284359A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001284359A
公开(公告)日：2001-10-12
申请号：JP2000101194
申请日：2000-03-31
申请人： HITACHI LTD
发明人： NAKAJIMA TAKASHI , IWASAKI TOMIO , OTA HIROYUKI , MIURA HIDEO , NISHIHARA SHINJI , SAWARA MASASHI , SUZUKI MASAYASU , YAMADA KENTARO
IPC分类号： C23C14/06 , C23C14/58 , C23C16/14 , H01L21/203 , H01L21/28 , H01L21/3205 , H01L21/8242 , H01L23/52 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To avoid breaking a tungsten wiring, etc., in a semiconductor device having the tungsten wiring. SOLUTION: Before forming a second layer insulation film on the upper side of a tungsten wiring, the thermal budget at a maximum temperature C of 600 deg.C or more to be loaded in process steps after forming the tungsten wiring film is applied beforehand, to avoid forming an unstable atomic configuration in the tungsten wiring, thereby relaxing the stress of the tungsten wiring and compacting it.

3. 发明专利

JP2001176875A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001176875A
公开(公告)日：2001-06-29
申请号：JP35699099
申请日：1999-12-16
申请人： HITACHI LTD
发明人： NAKAJIMA TAKASHI , MIURA HIDEO , SAWARA MASASHI
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60
摘要： PROBLEM TO BE SOLVED: To prevent a bonding pad from peeling, without degrading electric property in the uppermost wiring by forming on the side of an insulating film between base layers a Ti film, to which nitrogen of 10 to 25 atm% is added. SOLUTION: Ti is suppressed of its activation and prevented from reacting with oxygen inside the insulating film 100 between the base layers, by adding nitrogen to the Ti film 101 at the lower side of a bonding pad 112.

4. 发明专利

JP2000188265A SPUTTERING DEVICE AND METHOD 失效
公开(公告)号：JP2000188265A
公开(公告)日：2000-07-04
申请号：JP36406798
申请日：1998-12-22
申请人： HITACHI LTD , HITACHI TOKYO ELECTRONICS
发明人： YAJIMA AKIRA , KOBAYASHI HIDE , NAKAJIMA TAKASHI , NISHIHARA SHINJI , UCHIDA JUNICHI
IPC分类号： C23C14/35 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To prevent a film-formed substrate and a peripheral tool from being melted or film formation failure from occurring due to an excessive temperature increase by suppressing inflow current density to the film-formed substrate and the surface of a substrate-placement stand for placing the film-formed substrate to a specific value or less. SOLUTION: A treatment chamber 101 is grounded and an anode shield plate 401 that also plays a role of an adhesion-proof plate that is arranged while surrounding the side wall of a target is also grounded. Also, a voltage Vs is applied from a power supply 404 to a placement stand 105 of a film- formed substrate 403 that opposes the surface of a target 102 and a bottom adhesion-proof shield plate 402 that attaches to the placement stand 105, and the voltage Vs is at a negative potential. The negative potential becomes the barrier of electrons from the target 102 to prevent electrons from entering the substrate 403 and the bottom adhesion-proof plate 402. In this case, the inflow current density to the surface of the film-formed substrate 403 and the film-formed substrate placement stand 5 is suppressed to a specific value or less. Preferably, the potential of the substrate placement stand 5 is retained at -10 V--20 V.

5. 发明专利

JPH08213296A THIN FILM MANUFACTURING DEVICE AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08213296A
公开(公告)日：1996-08-20
申请号：JP25496694
申请日：1994-10-20
申请人： HITACHI LTD
发明人： MIURA HIDEO , NAKAJIMA TAKASHI , TSUZUKI KOICHI , NISHIMURA ASAO
IPC分类号： C23C16/44 , H01L21/02 , H01L21/203 , H01L21/205 , H01L21/31 , H01L21/66
摘要： PURPOSE: To prevent contamination due to dust in an device and on a substrate for accumulating thin films by providing a controller, which monitors the inner stress of the thin film which adheres to the inner wall of the device and sends a signal just before the stress reaches the limit value that causes cracks or peeling on the thin film. CONSTITUTION: In the thin film accumulation chamber 2 of a thin film manufacturing device, a stress sensor 1, which measures the inner stress of the thin film adhering to the inner wall of the device. Then, film forming conditions are inputted from an input/output device 5 and when the device operation is started to accumulate thin films, a controller 3 detects a signal (resistance change and temperature) from the stress sensor 1 and measures the stress conditions of the thin film adhering to the surface. While the inner stress of the film is below the limit value which does not cause peeling or cracks on the film, a signal is transmitted to a controller 4 to continue the thin film accumulation. When the inner stress of the film exceeds the limit value during film formation, warning output is transmitted to the controller 3.

6. 发明专利

JPH0516542B2 失效
公开(公告)号：JPH0516542B2
公开(公告)日：1993-03-04
申请号：JP11091783
申请日：1983-06-22
申请人： HITACHI LTD
发明人： ADACHI MASAO , FUNABASHI SEIJU , MURAMATSU AKIRA , NAKAJIMA TAKASHI
IPC分类号： G01N25/00 , G01N25/18

7. 发明专利

JPH01109612A LAMINATE TYPE SUPERCONDUCTIVE PLATE AND ITS MANUFACTURE 失效
公开(公告)号：JPH01109612A
公开(公告)日：1989-04-26
申请号：JP26633187
申请日：1987-10-23
申请人： HITACHI LTD
发明人： NAKAJIMA TAKASHI
IPC分类号： H01B12/06 , H01B13/00 , H01L39/00 , H01L39/02 , H05K9/00
摘要： PURPOSE:To prevent the deterioration of the chemical performance and the unstable superconductive property by laminating plural silver foils whose both sides are oxidized, and plural oxide superconductive membranes alternatively, baking up it at a specific temperature, cooling it gradually, and after that, covering the whole surface with ethylenetrifluoride chloride. CONSTITUTION:To silver foils 1A, 1B, 1C, 3A, 3B, 3C, 5A, 5B, and 5C, whose both sides are oxidized, membranes 2 and 4 formed of oxide superconductive particles adding some amount of binder or the like to the main component of YBa2Ca3O7 or YSrBaCu3O7 are superposed alternatively. And after they are sintered in a dried oxygen ambiance at the temperature 580 deg.C to 950 deg.C, for example, they are cooled up to less than 250 deg.C, in a gradual cooling at the rate less than 2 deg.C per minute, for example, in an oxygen ambiance including little moisture with the dew point less than 0 deg.C. After that, the whole surface is covered with etylene trifluoride chloride to form a laminate type superconductive plate.

8. 发明专利

JPS62103298A METHOD OF STOPPING REVOLUTION OF ARTIFICIAL SATELLITE 失效
公开(公告)号：JPS62103298A
公开(公告)日：1987-05-13
申请号：JP24290085
申请日：1985-10-31
申请人： HITACHI LTD
发明人： NAKAJIMA TAKASHI
IPC分类号： B64G1/64 , B64G1/22

9. 发明专利

JPS6250999A SPIN TABLE SIGNAL TRANSMISSION 失效
公开(公告)号：JPS6250999A
公开(公告)日：1987-03-05
申请号：JP18952385
申请日：1985-08-30
申请人： HITACHI LTD
发明人： NAKAJIMA TAKASHI
IPC分类号： H04B17/00 , B64G7/00 , G08C23/00 , G08C23/04 , G08C23/06 , H04B10/00 , H04B10/11 , H04B10/118 , H04B10/80

10. 发明专利

JPS60244126A CONTACTLESS DATA TRANSMITTER SYSTEM FOR ARTIFICIAL SATELLITE 失效
公开(公告)号：JPS60244126A
公开(公告)日：1985-12-04
申请号：JP9874384
申请日：1984-05-18
申请人： HITACHI LTD
发明人： NAKAJIMA TAKASHI
IPC分类号： H04B10/00 , H04B7/185
摘要： PURPOSE:To attain the transmission of data with no contact noise between a despan platform and various devices of a satellite main body, by providing a compact and light-weight system comprising an electro-optical or photoelectric transducer, optical fiber cables and an optical contactless data transmitter consisting of condenser lenses, etc. CONSTITUTION:The data on a data device 4 set at the side of a despan platform 2 is transmitted via an optical fiber cable 7 after applying electro-optical conversion 9 and reaches a data device 6 set at a satellite main body 1 via an optical contactless data transmitter 13 consisting of condenser lenses 11 and 12 and an optical fiber cable 8 at the side of the main body 1 after applying photoelectric conversion 10. While the data on the device 6 is applied with photoelectric conversion 10 and is transmitted to a device 4 via the cable 8 and the transmitter 13 then the cable 7 at the side of the platform 2. Thus it is possible to perform the data transmission between the platform 2 and various devices of the main body 1 with no contact noise and with high efficiency.

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