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1. 发明专利

JPH0335385B2 失效
公开(公告)号：JPH0335385B2
公开(公告)日：1991-05-28
申请号：JP25175986
申请日：1986-10-24
申请人： HITACHI LTD
发明人： HONDA TAKU , MINATO AKIRA , IZUMITANI MASAKYO , KASHIMURA EIJI , OOSUMI KATSUMI
IPC分类号： G21D1/00 , C23F14/00 , C23F15/00 , F28F19/00 , G21D3/00

2. 发明专利

JPH0130553B2 失效
公开(公告)号：JPH0130553B2
公开(公告)日：1989-06-20
申请号：JP8513780
申请日：1980-06-25
申请人： HITACHI LTD
发明人： SUZUKI MAMORU , SUZUKI KATSUMI , ITO KAZUTOSHI , MINATO AKIRA , KANBAYASHI TAKESHI , HOSHINO YOSHUKI
IPC分类号： C02F1/48

3. 发明专利

JPS6348944B2 失效
公开(公告)号：JPS6348944B2
公开(公告)日：1988-10-03
申请号：JP10586579
申请日：1979-08-22
申请人： HITACHI LTD
发明人： ITO MASAHIKO , MIDORIKAWA HEIHACHIRO , MINATO AKIRA , KUBO MITSURU
IPC分类号： C23C2/02

4. 发明专利

JPS63313B2 失效
公开(公告)号：JPS63313B2
公开(公告)日：1988-01-06
申请号：JP4267082
申请日：1982-03-19
申请人： HITACHI LTD
发明人： ITO KAZUTOSHI , SUZUKI KATSUMI , SUZUKI MAMORU , MINATO AKIRA , UKAJI HIDEO
IPC分类号： B65D90/22 , C23F13/00 , G21D1/00

5. 发明专利

JPS6250531B2 失效
公开(公告)号：JPS6250531B2
公开(公告)日：1987-10-26
申请号：JP14253684
申请日：1984-07-09
申请人： HITACHI LTD
发明人： SASADA YASUHIRO , MINATO AKIRA
IPC分类号： C21D9/50

6. 发明专利

JPS62123737A DICING EQUIPMENT 失效
公开(公告)号：JPS62123737A
公开(公告)日：1987-06-05
申请号：JP26245585
申请日：1985-11-25
申请人： HITACHI LTD , HITACHI TOKYO ELECTRONICS
发明人： MIMATA TSUTOMU , KAWANOBE TORU , MINATO AKIRA
IPC分类号： B24B55/02 , B28D5/00 , H01L21/301 , H01L21/304 , H01L21/78
摘要： PURPOSE:To effectively prevent the charge of a high-pressure water flow by using pure water itself for cooling a blade and required concentration carbonic acid water for washing. CONSTITUTION:Pure water is supplied from the same water tank 19 to both the nozzle 12 for cooling a blade 11 and the high-pressure injection nozzle 13 for washing. The pure water is directly supplied to the nozzle 12 for cooling from the water tank 19. On the other hand, the pure water from the water tank 19 is introduced in a mixing tank 20 where carbon dioxide is introduced from a cylinder 21 and is mixed with the pure water and required concentration carbonic acid water is made for the high-pressure injection nozzle. By pressurizing the carbonic acid water with a pump 22, a so called high-pressure jet water flow can be injected on a wafer 16 from the nozzle 13. In this way, charging due to the friction of the washing water with the nozzle or with air, etc. can sufficiently be prevented.

7. 发明专利

JPS61294398A METHOD OF OPERATING BOILING WATER TYPE NUCLEAR POWER PLANT 失效
公开(公告)号：JPS61294398A
公开(公告)日：1986-12-25
申请号：JP13603285
申请日：1985-06-24
申请人： HITACHI LTD
发明人： IZUMITANI MASAKIYO , ONAKA NORIYUKI , HONDA TAKU , MINATO AKIRA , KAWAKAMI TOSHIO
IPC分类号： G21D3/08

8. 发明专利

JPS61287155A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61287155A
公开(公告)日：1986-12-17
申请号：JP12806885
申请日：1985-06-14
申请人： HITACHI LTD
发明人： KOBAYASHI SHIRO , ITO MASAHIKO , MINATO AKIRA
IPC分类号： H01L23/02 , H01L21/56 , H01L23/28 , H01L23/29 , H01L23/31 , H01L23/49
摘要： PURPOSE:To obtain excellent dampproofing and corrosion resistance by bringing a semiconductor device after wire bonding into contact with a nonaqueous solvent, into which an organic substance generating a metal-organic matter compound insoluble to water is dissolved, forming a compound and sealing the semiconductor device with a resin. CONSTITUTION:Triazoles are preferable as a compound formation type organic matter. A chip such as a silicon chip 1 is mounted onto lead frames 2, and Cu wires 3 are bonded with Ag electrodes 4 for the lead frames 2 and Al electrodes 5 for the silicon chip 1. The semiconductor device is dipped into an ethyl alcohol solution into which benzotriazole is dissolved, a compound of a metal-the organic matter is shaped on the surface, and the semiconductor device is pulled up from said solution and dried. Ag-benzotriazole films 6 are shaped onto the surfaces of the Ag electrodes 4 for the lead frames, Cu- benzotriazole films 7 onto the surfaces of the Cu wires 3 and Al-benzotriazole films 8 onto the surfaces of the Al electrodes 5 for the silicon chip 1, and these films, chip, wires, electrodes, etc. are sealed with a sealing resin 9.

9. 发明专利

JPS6136639B2 失效
公开(公告)号：JPS6136639B2
公开(公告)日：1986-08-19
申请号：JP12238980
申请日：1980-09-05
申请人： HITACHI LTD
发明人： ITO KAZUTOSHI , SUZUKI KATSUMI , SUZUKI MAMORU , MINATO AKIRA , SAKATA JUJI
IPC分类号： G21F9/02 , B01J23/00 , B01J23/40 , G21F9/00

10. 发明专利

JPS6152379A Method and device for corrosion prevention of wetting metallic material 失效
标题翻译：用于腐蚀防止金属材料腐蚀的方法和装置
公开(公告)号：JPS6152379A
公开(公告)日：1986-03-15
申请号：JP17371484
申请日：1984-08-21
申请人： Hitachi Ltd
发明人： HONDA TAKU , KASHIMURA EIJI , MINATO AKIRA
IPC分类号： C23F15/00 , C23F11/18 , F22D11/00 , G21D1/02
CPC分类号： Y02E30/40
摘要： PURPOSE: To prevent the corrosion of the wetting metallic material of a boiling water reactor (BWR) during the shutdown of the BWR by measuring the specific conductivity of the water to be used and controlling the concn. of the dissolved oxygen in the water or the pH thereof from the measured value.
CONSTITUTION: The conductivity of the water is measured by a detector 16 and the concn. of the dissolved oxygen in the water is measured by a dissolved oxygen meter 17 in order to prevent the corrosion of condensate and feed water pipings by the water in the shutdown stage of the BWR plant for the purpose of making a periodic inspection of the BWR10. The oxygen conc. is adjusted by an oxygen feeder 18 so as to attain 40ppbW40ppm when the specific conductivity is ≤0.1μS/cm to decrease considerably the corrosion rate of the piping of the wetting metallic material. An inert gas is fed from the feeder 18 to deaerate the water until the concn. of the dissolved oxygen is brought to ≤40ppb or ammonia or the like is fed to the water to maintain the pH at 7.5W10 passive region to prevent the corrosion of the metallic pipings if the specific conductivity exceeds 0.1μS/cm.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过测量使用的水的比电导率和控制浓度来防止BWR关闭期间沸水反应堆（BWR）的润湿金属材料的腐蚀。的水中的溶解氧或其pH值。构成：水的电导率由检测器16和浓度通过溶解氧计17来测量水中的溶解氧，以便在BWR工厂的关闭阶段防止冷凝物和给水管道的腐蚀，以便定期检查BWR10。氧浓度通过氧气进料器18进行调节，以便当比电导率<= 0.1muS / cm时达到40ppb-40ppm，以显着降低润湿金属材料的管道的腐蚀速率。从进料器18供给惰性气体，使水脱水直至浓缩。的溶解氧达到= 40ppb，或者如果比电导率超过0.1muS / cm，则将氨等进料到水中以将pH保持在7.5-10被动区域以防止金属管道的腐蚀。

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