专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2568231B2 失效
公开(公告)号：JP2568231B2
公开(公告)日：1996-12-25
申请号：JP30558187
申请日：1987-12-04
申请人： HITACHI LTD
发明人： KOIKE NORIO
IPC分类号： H01L27/148 , H01L27/14 , H04N5/335 , H04N5/341 , H04N5/347 , H04N5/355 , H04N5/369 , H04N5/3722

2. 发明专利

JP2544341B2 失效
公开(公告)号：JP2544341B2
公开(公告)日：1996-10-16
申请号：JP26110185
申请日：1985-11-22
申请人： HITACHI LTD
发明人： OZAKI TOSHIBUMI , KOIKE NORIO , ONO HIDEYUKI , AKIMOTO HAJIME
IPC分类号： H04N5/335 , H04N5/341 , H04N5/359 , H04N5/372

3. 发明专利

JPH04186232A THIN FILM ELECTRONIC CIRCUIT DEVICE 失效
公开(公告)号：JPH04186232A
公开(公告)日：1992-07-03
申请号：JP31401790
申请日：1990-11-21
申请人： HITACHI LTD
发明人： KOIKE NORIO , KANEKO YOSHIYUKI
IPC分类号： G02F1/136 , G02F1/1368 , H01L27/12 , H01L27/146
摘要： PURPOSE:To contain a scanning circuit in the same panel by preventing light leak in a thin film electronic circuit with an opaque material layer formed. CONSTITUTION:A display region 1' and a region 22, in which a TFT 23 composing a scanning circuit is formed, are provided on one side surface of a substrate 11, and an opaque material film 24, for preventing the leak of light from a back light 18 in the region 22, is provided on the other side surface. Conductive metals such as Al and dyed gelatin etc. can be used for the film 24. It is both preferable to shorten the light 18 to exist in only the region 1' and to more widen a forming area of the film 24.

4. 发明专利

JPH0433143B2 失效
公开(公告)号：JPH0433143B2
公开(公告)日：1992-06-02
申请号：JP17322182
申请日：1982-10-04
申请人： HITACHI LTD
发明人： KOIKE NORIO , TAKEMOTO KAYAO , TSUKADA TOSHIHISA , UMAJI TOORU
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/369 , H04N5/3728

5. 发明专利

JPH0350731A THIN FILM SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0350731A
公开(公告)日：1991-03-05
申请号：JP18463189
申请日：1989-07-19
申请人： HITACHI LTD
发明人： KANEKO YOSHIYUKI , TSUTSUI KEN , KOIKE NORIO , TSUKADA TOSHIHISA
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522 , H01L27/12 , H01L29/786
摘要： PURPOSE:To relieve defects by constituting dual line wiring at the intersecting part of a gate bus and a data bus of a TFT gate array, and eliminating a part of the dual line wiring, when the short between the wirings generates. CONSTITUTION:On a light transparent insulating substrate 10, Cr metal is selectively stuck and formed as a gate electrode and gate buses 1, 1'. By plasma discharge, silicon nitride 11 is deposited as a gate insulating film and an interlayer insulating film on the whole surface. By plasma discharge, an amorphous silicon layer is deposited as an amorphous semiconductor layer 2, and further N-type amorphous silicon 3 is deposited. After the amorphous silicon (the N-type layer also is contained) 2, 3 are etched in a desired pattern, a source electrode 4, a drain electrode 5 and data buses 5' are formed by using Cr, Al, etc., and the N-type amorphous silicon is etched by using the pattern as a mask. A transparent electrode is selectively stuck by using indium tin oxide, and a protecting film 7 is stuck on the almost whole surface by using silicon nitide and the like. Hence a semiconductor device can be relieved from the generation of defects caused by short circuiting by cutting a part of the dual line.

6. 发明专利

JPH02250474A SOLID-STATE IMAGE PICKUP ELEMENT 失效
公开(公告)号：JPH02250474A
公开(公告)日：1990-10-08
申请号：JP7060889
申请日：1989-03-24
申请人： HITACHI LTD
发明人： WATABE TOMOYUKI , KOIKE NORIO , OZAKI TOSHIBUMI , IWAMURA KAZUAKI , INAI HIDENORI
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/374
摘要： PURPOSE:To realize an ideal two-dimensional spatial filter with a simple manufacture process and a small number of elements without any increase in area by forming a network of distribution constant circuits of distributed impedance that the resistive film or resistive semiconductor layer of the solid-state image pickup element. CONSTITUTION:The network of 1st impedance 202 (shown by R) constituting an image smoothing filter is realized by using the distribution constant impedance that the plane resistance material such as a transparent electrode, protection film, or semiconductor layer on the solid-state image pickup element has. Consequently, the film on the solid-state image pickup element can be used as it is and the number of element does not increase owing to the formation of the image smoothing filter. The network can be realized nearly without altering the manufacture process and the impedance is formed in an optional continuous direction, so the ideal two-dimensional spatial filter can be formed.

7. 发明专利

JPH02214818A LIQUID CRYSTAL DISPLAY DEVICE AND ITS DRIVING METHOD 失效
公开(公告)号：JPH02214818A
公开(公告)日：1990-08-27
申请号：JP3506789
申请日：1989-02-16
申请人： HITACHI LTD
发明人： HORII JUICHI , KANEKO YOSHIYUKI , KOIKE NORIO
IPC分类号： G02F1/133 , G09G3/36 , H01L29/78 , H01L29/786
摘要： PURPOSE:To obtain an active matrix type liquid crystal display device where the influence of gate pulse delay is eliminated by applying driving pulses to plural gate lines at the same time. CONSTITUTION:Gate pulses are applied to 1st, 2nd...(k)th gate lines of the active matrix type liquid crystal display device to turn on TFTs of the 1st, 2nd...(k)th lines, and data are written in picture elements in the 1st, 2nd...(k)th lines through data lines. For example, when k=2, the gate pulses are applied to two gate lines G1 and G2 at the same time to turn on the TFTs 13 connected to those gate lines at the same time. At this time, data are written in respective picture elements in the 1st line through odd-ordered data lines D1, D3...D2n-1 and picture elements in the 2nd line through even-numbered data lines D2, D4...D2n. Consequently, trouble caused by the shortening of a signal write time due to gate pulse propagation delay by the high resistance and parasitic capacity of gate wiring is eliminated to obtain excellent and stable image quality.

8. 发明专利

JPH02210420A PRODUCTION OF LIQUID CRYSTAL PANEL 失效
公开(公告)号：JPH02210420A
公开(公告)日：1990-08-21
申请号：JP2979589
申请日：1989-02-10
申请人： HITACHI LTD
发明人： YAMAMOTO HIDEAKI , KOIKE NORIO , TANAKA YASUO , MATSUMARU HARUO , TSUTSUI KEN
IPC分类号： G02F1/13 , G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To allow the inspection of the disconnection and the short-circuiting of gate wirings in the state held connected to bus lines by impressing a chemical conversion voltage to each of plural pieces of anodic oxidation electrodes formed in correspondence to plural groups, thereby executing anodic oxidation. CONSTITUTION:The gate wirings (gate electrodes) 11, the 1st bus line 12 for anodic oxidation of the gate wirings 11 located in odd number positions, the 2nd bus line 13 for anodic oxidation of the gate wirings located in even number position, and pads 14, 15 for connection to an external power source (anode side) are provided. Plural pieces of the gate wirings 11 are grouped in such a manner that the adjacent gate wires are not included in the same groups and the anodic oxidation is executed by impressing the chemical conversion voltages to the respective anodic oxidation electrodes formed in correspondence to the respective groups. The inspection of the disconnection and short-circuiting of the gate wirings 11 is possible in this way even if the bus lines 12, 13 for the anodic oxidation are held connected.

9. 发明专利

JPH01268052A SOLID-STATE IMAGE SENSING DEVICE 失效
公开(公告)号：JPH01268052A
公开(公告)日：1989-10-25
申请号：JP9554588
申请日：1988-04-20
申请人： HITACHI LTD
发明人： OZAKI TOSHIBUMI , KOIKE NORIO , NAKAI MASAAKI , ANDO HARUHISA , ONO HIDEYUKI
IPC分类号： H01L21/339 , H01L27/14 , H01L27/148 , H01L29/76 , H01L29/762 , H04N5/335 , H04N5/341 , H04N5/355 , H04N5/365 , H04N5/3728
摘要： PURPOSE:To increase the weight of the maximum transfer charge of a vertical CCD and to improve the dynamic range of an element, by forming a second channel layer having the same type as that of a CCD channel on the surface part of the vertical CCD. CONSTITUTION:An optoelectronic transducer element which is arranged in a two-dimensional pattern and a vertical CCD and a horizontal CCD which sequentially transfer optical signal charge stored in the optoelectronic transducer element are integrated on a semiconductor substrate 6 in a solid-state image sensing device. In this device, a second channel impurity layer 21 having the same type as that of an impurity layer 7 which forms the vertical CCD is provided on the surface part of the vertical CCD. In this way, the second channel layer forms a shallow, high concentration channel layer. A channel stopper layer 15 which is intruded into the channel part is offset. Thus, the reduction in effective channel width is eliminated, and the effective channel area can be expanded. The maximum channel potential is made high. The maximum potential is provided at a part close to the surface. A capacitance C per unit area can be made large. The amount of the maximum transfer charge of the vertical CCD can be improved based on those effects.

10. 发明专利

JPH01243462A SOLID-STATE IMAGE SENSOR 失效
公开(公告)号：JPH01243462A
公开(公告)日：1989-09-28
申请号：JP6937288
申请日：1988-03-25
申请人： HITACHI LTD
发明人： OZAKI TOSHIBUMI , KOIKE NORIO
IPC分类号： H01L27/146 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/378
摘要： PURPOSE:To obtain a scanning circuit having a high degree of integration and high performance and a photoelectric conversion section having high photo- sensitivity by forming an optoelectric transducer into an impurity layer lower in concentration than an impurity layer to which a scanning means is provided. CONSTITUTION:A scanning circuit section (A-A' section) is formed in CMOS structure composed of an N channel MOS transistor and a P channel MOS transistor. Each transistor is shaped in a P-type well 22 and an N-type well 23 in concentration higher than a P substrate 21. On the other hand, a photoelectric conversion section (B-B' section) is formed in the P-substrate 21 in low concentration. Accordingly, the degree of integration is easily improved by using a micro-transistor because the scanning circuit section (A-A' section) is formed into a high concentration impurity layer, and high photo sensitivity is acquired because the photoelectric conversion section is shaped onto the low-concentration substrate.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式