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    • 3. 发明专利
    • Formation of protective film
    • 形成保护膜
    • JPS59168932A
    • 1984-09-22
    • JP4314683
    • 1983-03-17
    • Hitachi Ltd
    • HONDA YOSHINORIKITOU MAKOTOKOKADO YUUICHI
    • B05D1/00B05D3/04C08J7/04C23C14/06G11B5/72
    • G11B5/72
    • PURPOSE:To raise resistance to slide, adhesive strength and moisture resistance of a protective film by executing a spattering in a gaseous mixture composing of indispensably an inert gas and a nitrogen gas. CONSTITUTION:A target containing an organic polymer is brought to the spattering in a gaseous mixture whose indispensable components are the inert gas and the nitrogen gas, or the gaseous mixture whose indispensable components are the inert gas and a gaseous nitrogen compound or a gaseous mixture whose indispensable components are the inert gas, the nitrogen gas and a gaseous nitrogen compound. In this way, it is possible to obtain a protective film which is satisfactory in its resistance to slide, high in its adhesive strength, good in its moisture resistance, also excellent in its mechanical characteristic and chemical stability, too, as a whole, and versatile for various application.
    • 目的:通过在由惰性气体和氮气组成的气体混合物中进行飞溅,提高保护膜的滑动阻力,粘合强度和耐湿性。 构成:将含有有机聚合物的靶材以不可或缺的成分为惰性气体和氮气的气体混合物或不可或缺的成分为惰性气体的气态混合物和气态氮化合物或气体混合物 不可或缺的组分是惰性气体,氮气和气态氮化合物。 以这种方式,可以获得其耐滑动性好,粘合强度高,耐湿性好,机械特性和化学稳定性整体上也良好的保护膜, 多用途的各种应用。
    • 4. 发明专利
    • Pattern formation
    • 模式形成
    • JPS5961928A
    • 1984-04-09
    • JP17105482
    • 1982-10-01
    • Hitachi Ltd
    • KOKADO YUUICHIKITOU MAKOTOHONDA YOSHINORI
    • H01L21/302G03F7/26H01L21/027H01L21/3065
    • G03F7/265
    • PURPOSE:To form a resist pattern with little reduction of film with a dry method by placing a monomer including Si incontact with an organic thin film which is irradiated with a radioactive ray, forming thereby a polymer including Si to the irradiated area and thereafter processing it with the O2 plasma. CONSTITUTION:An organic thin film 2 is formed in the thickness of 0.3mum-5mum on a silicon wafer or a substrate 1 such as chromium vacuum-deposited glass and such film is then irradiated with a radioactive ray 3 such as electron beam, X-ray or ion beam in the vacuum chamber. Thereafter, the substrate is disposed in the same or other vacuum-chamber, an organic compound steam including Si is introduced into the vacuum chamber and the inside thereof is kept at the prescribed pressure. After a constant period, a polymer film 4 including Si is selectively formed at the radioactive ray 3 irradiating area on the organic thin film 2. Finally, this substrate is subjected to the O2 plasma. Thereby, the organic thin film is removed only from the area where there is no pattern of polymer film 4 and a resist pattern is formed.
    • 目的:为了通过将包含Si的单体与用放射线射线照射的有机薄膜配合而形成具有少量膜干燥的抗蚀剂图案,从而将包含Si的聚合物形成在照射区域上,然后加工 与O2等离子体。 构成:在硅晶片或诸如铬真空沉积玻璃的基板1上形成厚度为0.3μm-5μm的有机薄膜2,然后用诸如电子束,X-射线的放射线3照射该薄膜, 射线或离子束。 此后,将基板设置在相同或其它真空室中,将包含Si的有机化合物蒸汽引入真空室中,并将其内部保持在规定压力。 恒定时间后,在有机薄膜2上的放射线3照射区域选择性地形成包含Si的聚合物膜4.最后,对该基板进行O 2等离子体。 由此,仅从没有聚合物膜4的图案的区域去除有机薄膜,形成抗蚀剂图案。
    • 8. 发明专利
    • Magnetic recording medium
    • 磁记录介质
    • JPS59171026A
    • 1984-09-27
    • JP4413383
    • 1983-03-18
    • Hitachi Ltd
    • KITOU MAKOTOHONDA YOSHINORIKOKADO YUUICHI
    • G11B5/64C10M177/00C10N40/18G11B5/72G11B5/725
    • G11B5/725
    • PURPOSE:To obtain a magnetic recording medium having superior wear resistance and showing a significant lubricating effect for a long term by forming an org. protective film on the surface of a vapor-deposited magnetic film on a substrate by sputtering in a gaseous mixture of an inert gas with N2 or a gaseous compound contg. N. CONSTITUTION:A vapor-deposited film of a magnetic metal (alloy), a magnetic metallic oxide or the like is formed on a substrate such as a film or a disk of polyester or Al, and an org. protective film of an org. polymer such as polyamide, polyimide, polysulfone or polyvinylidene fluoride is formed on the surface of the magnetic film by sputtering in a gaseous mixture of an inert gas such as Ar or He with N2 or a gaseous compound contg. N such as NH3, nitromethane, ethylenediamine or NO. The org. polymer may be mixed with an inorg. compound such as alumina, silica or MoS2 or a metal such as Al or Au. Thus, a uniform thin protective film can be easily formed, and a magnetic recording medium retaining its lubricity for a long term and having superior durability is obtd.
    • 目的:获得具有优异耐磨性并通过形成组织长期显示出显着的润滑效果的磁记录介质。 通过溅射在惰性气体与N 2或气体化合物的气体混合物中的气相沉积磁性膜表面上的保护膜。 N.构成:在诸如胶片或聚酯或Al的盘的基材和组织上形成磁性金属(合金),磁性金属氧化物等的气相沉积膜。 组织的保护膜 聚合物如聚酰胺,聚酰亚胺,聚砜或聚偏二氟乙烯通过溅射在惰性气体例如Ar或He的气体混合物中,用N 2或气体化合物形成在磁性膜的表面上。 N如NH 3,硝基甲烷,乙二胺或NO。 组织机构 聚合物可以与inorg混合。 化合物如氧化铝,二氧化硅或MoS2或金属如Al或Au。 因此,可以容易地形成均匀的薄的保护膜,并且能够长期保持其润滑性并且具有优异的耐久性的磁记录介质。
    • 9. 发明专利
    • Apparatus for forming film
    • 形成电影的装置
    • JPS59153881A
    • 1984-09-01
    • JP2455383
    • 1983-02-18
    • Hitachi Ltd
    • KOKADO YUUICHIKITOU MAKOTOHONDA YOSHINORI
    • C08F2/00C08G85/00C23C14/12
    • C23C14/12
    • PURPOSE:To form efficiently a film of an org. compound having a high b.p. and a low vapor pressure on a substrate by activating vapor of the org. compound by passing through plasma. CONSTITUTION:An org. compound 11 having a high b.p. and a low vapor pressure is charged into a container 12, and it is optionally heated with a heater 13 to generate vapor. A reaction vessel 15 is put on the container 12 with a valve 14 in-between, and it is evacuated through an exhaust port 19. A meshy electrode 3 and an electrode 16 having an attached substrate 6 are placed in the vessel 15, and high frequency voltage of >=10kHz frequency is impressed from a power source 17 to generate plasma 18 between the substrate 6 and the electrode 3. The valve 14 is opened in the state. Vapor of the org. compound is activated with the plasma in the vessel 15, and the activated vapor is not adsorbed on the inner wall of the vessel 15, and a film is efficiently formed on the substrate 6.
    • 目的:有效地形成组织的电影。 具有高沸点的化合物 并通过激活组织的蒸气在基底上的低蒸气压。 化合物通过等离子体。 构成:组织 化合物11具有高的沸点 并且将低蒸汽压力装入容器12中,并且可选地用加热器13加热以产生蒸汽。 将反应容器15放置在容器12上,其中间具有阀14,并通过排气口19抽空。将网状电极3和具有附着基板6的电极16放置在容器15中,高 从电源17施加> 10kHz频率的频率电压,以在基板6和电极3之间产生等离子体18.阀14在该状态下打开。 组织的蒸气 化合物在容器15中用等离子体活化,并且活化的蒸气不被吸附在容器15的内壁上,并且在基板6上有效地形成膜。
    • 10. 发明专利
    • PATTERN FORMING METHOD
    • JPS58165321A
    • 1983-09-30
    • JP4709382
    • 1982-03-26
    • HITACHI LTD
    • KOKADO YUUICHIKITOU MAKOTOHONDA YOSHINORI
    • G11C11/14G03F7/20H01L21/027H01L21/30
    • PURPOSE:To improve a remained film rate of the resist in plasma development by a method wherein at least one layer among the multi-layered coating comprising organic substances other than the lowermost layer is made to contain metal elements. CONSTITUTION:Multi-layered coatings 2, 3 comprising organic substances are formed on a substrate 1, and at least one layer 3 among such multi-layered coatings other than the lowermost layer is made to contain metal elements. For example, the coating 2 comprises polystylene, polyimide, etc., while the coating 3 comprises organic silicon high molecules, a mixture of organic metal compounds and high molecules, etc. A light or radiation 7 is irradiated onto an element 10 with those coating thus formed, thereby to effect the exposure process. Then, the upper layer 3 undergoes plasma development with plasma containing fluorine. Next, the lower layer 2 undergoes plasma development with plasma containing oxygen. When the organic thin film containing metal elements are brought into contact with oxygen plasma, SiO2, Al2O3, etc. are generated in the film and the film becomes hard to be decomposed, so that a remained film rate of the lower resist can be improved.