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JP2007059663A Display device, and method of manufacturing same 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：JP2007059663A
公开(公告)日：2007-03-08
申请号：JP2005243955
申请日：2005-08-25
申请人： Hitachi Displays Ltd , 株式会社日立ディスプレイズ
发明人： SAITO KAZUNARI , SAITO YOSHIYUKI , KUWATA MASAHIRO , SHIINA MASAHIDE , ODA TETSUO
IPC分类号： H01L21/316 , H01L21/76 , H01L21/8234 , H01L27/08 , H01L27/088
摘要： PROBLEM TO BE SOLVED: To achieve microfabrication of semiconductor chips used in a drive circuit and reduce its cost, by using each element isolation film for isolating active regions from each other.
SOLUTION: In a method of manufacturing a display device, the semiconductor chip is isolated into a low breakdown voltage region and a high breakdown voltage region; and both the low breakdown voltage region and the high breakdown voltage region have element isolation films, each of which comprises an oxide film and have their respective active regions two of which are isolated from each other by the element isolation film. More specifically, this manufacturing method has a step for so oxidizing selectively the semiconductor substrate of the semiconductor chip as to form in the principal surfaces of both the low breakdown voltage region, and the high breakdown voltage region the oxide films of the semiconductor chip by each of which the active regions are isolated from each other; a step for forming thereafter each silicon film on each oxide film; a step for so oxidizing the semiconductor substrate as to form gate oxide films on the active regions of both the low breakdown voltage region and the high breakdown voltage region, and as to form element separating films of the low breakdown voltage region and the high breakdown voltage region; a step for so etching the low breakdown voltage region as to remove the gate oxide films present on the low breakdown voltage region; and a step for so oxidizing the principal surface of the low breakdown voltage region as to form each gate oxide film on each active region of the low breakdown voltage region.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了实现用于驱动电路中的半导体芯片的微细加工，并且通过使用每个元件隔离膜来隔离有源区域来降低其成本。解决方案：在制造显示装置的方法中，将半导体芯片隔离成低击穿电压区域和高击穿电压区域; 并且低击穿电压区域和高击穿电压区域都具有元件隔离膜，每个元件隔离膜包括氧化膜并且其各自的有源区域通过元件隔离膜彼此隔离。更具体地说，该制造方法具有如下步骤：选择性地氧化半导体芯片的半导体衬底，以便在低击穿电压区域和高击穿电压区域中形成半导体芯片的氧化物膜的每个其中活性区域彼此隔离; 在每个氧化膜上形成每个硅膜的步骤; 使半导体基板氧化以在低击穿电压区域和高击穿电压区域的有源区域上形成栅极氧化膜的步骤，以及形成低击穿电压区域和高击穿电压的元件分离膜地区; 用于蚀刻低击穿电压区域以去除存在于低击穿电压区域上的栅极氧化膜的步骤; 以及使低击穿电压区域的主表面氧化以在低击穿电压区域的每个有源区上形成每个栅极氧化膜的步骤。版权所有（C）2007，JPO＆INPIT

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