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1. 发明专利

JP2004137476A Borazine-based resin composition, its manufacturing method, insulating film and its forming method 审中-公开
公开(公告)号：JP2004137476A
公开(公告)日：2004-05-13
申请号：JP2003317583
申请日：2003-09-09
申请人： Hitachi Chem Co Ltd , National Institute Of Advanced Industrial & Technology , 日立化成工業株式会社 , 独立行政法人産業技術総合研究所
发明人： MATSUTANI HIROSHI , UCHIMARU YUKO
IPC分类号： C08L85/04 , C08G77/56 , C08G77/60 , C08G79/08 , C08K5/00 , H01B3/00 , H01B3/02 , H01L21/312 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a borazine-based resin composition as a coating material which forms an insulating film of a sufficient thickness by coating and is physically and chemically stable, and the like.
SOLUTION: Interlayer insulating films 5, 7 (porous insulating films) provided in a memory capacitor cell 8 is formed between a gate electrode 3 fixed on a silicon wafer 1 and an opposite electrode 8C. The interlayer insulating films 5, 7 are obtained, for example, by applying the borazine-based resin composition, which comprises an organic silicon borazine polymer and a high boiling aromatic solvent and has a non-volatile component concentration of at least 1mass% and a non-gelling time of at least 6 hr, by a spin-coating method and drying the coated film.
COPYRIGHT: (C)2004,JPO

2. 发明专利

JP2004136661A Insulating film 审中-公开
公开(公告)号：JP2004136661A
公开(公告)日：2004-05-13
申请号：JP2003317569
申请日：2003-09-09
申请人： Hitachi Chem Co Ltd , National Institute Of Advanced Industrial & Technology , 日立化成工業株式会社 , 独立行政法人産業技術総合研究所
发明人： MATSUTANI HIROSHI , UCHIMARU YUKO
IPC分类号： B32B9/00 , C08G77/56 , C08G77/60 , C08G79/08 , H01L21/312
摘要： PROBLEM TO BE SOLVED: To provide an insulating film or the like which sufficiently reduces a dielectric constant, causes no hydrolysis, and is excellent in stability. SOLUTION: The insulating film 120 has a two-layer structure wherein a B layer 112 containing a non-borazine compound such as SiOF or organic SOG and an A layer 111 containing a borazine compound are laminated in this sequence alternately on a silicon wafer 100 having a silicon base layer. COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2004115680A Organosilicon borazine polymer, its production method, borazine resin composition, electrical insulating film and its formation method 审中-公开
公开(公告)号：JP2004115680A
公开(公告)日：2004-04-15
申请号：JP2002282045
申请日：2002-09-26
申请人： Hitachi Chem Co Ltd , National Institute Of Advanced Industrial & Technology , 日立化成工業株式会社 , 独立行政法人産業技術総合研究所
发明人： UCHIMARU YUKO , MATSUTANI HIROSHI , ABE KOICHI , KAJI MAKOTO
IPC分类号： C08G79/08 , C09D5/25 , C09D183/16 , C09D185/04 , H01B3/30
摘要： PROBLEM TO BE SOLVED: To provide an organosilicon borazine polymer having no alkynyl group at the side chain which can be prepared without using a catalyst such as a platinum catalyst.
SOLUTION: The organosilicon borazine polymer comprises one obtained by subjecting an organosilicon compound containing at least two C-C unsaturated bonds and a hydroborazine compound containing at least two boron-hydrogen bonds to polyaddition by a hydroboration reaction.
COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2004137475A Method for producing borazine-based resin composition, borazine-based resin composition, insulation coating and method for forming the same 有权
公开(公告)号：JP2004137475A
公开(公告)日：2004-05-13
申请号：JP2003317573
申请日：2003-09-09
申请人： Hitachi Chem Co Ltd , National Institute Of Advanced Industrial & Technology , 日立化成工業株式会社 , 独立行政法人産業技術総合研究所
发明人： MATSUTANI HIROSHI , UCHIMARU YUKO
IPC分类号： C08G77/50 , C08G77/56 , C08G77/60 , C09D5/25 , C09D183/05 , C09D185/04 , H01L21/312
摘要： PROBLEM TO BE SOLVED: To provide an insulation coating and the like containing little metallic impurities and sufficiently suppressing generation of leakage current.
SOLUTION: Interlayer insulation films 5, 7 (insulation coating) lying in a memory capacitor cell 8 are formed between a gate electrode 3 and an opposite electrode 8C installed on a silicone wafer 1. The interlayer insulation films 5, 7 are prepared, e.g., by applying a borazine-based resin composition containing an organic silicon borazine-based polymer and ethylbenzene and having ≥0.5 mass% solid concentration and ≤30 ppm content of metallic impurities by spin coating and drying the same.
COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2004137474A Borazine-based resin composition, porous insulating film and its forming method 审中-公开
公开(公告)号：JP2004137474A
公开(公告)日：2004-05-13
申请号：JP2003317567
申请日：2003-09-09
申请人： Hitachi Chem Co Ltd , National Institute Of Advanced Industrial & Technology , 日立化成工業株式会社 , 独立行政法人産業技術総合研究所
发明人： MATSUTANI HIROSHI , UCHIMARU YUKO
IPC分类号： C08J9/04 , C08G77/56 , C08G77/60 , C08L83/14 , C08L83/16 , C09D183/14 , C09D183/16 , H01L21/312
摘要： PROBLEM TO BE SOLVED: To provide a borazine-based resin composition which exhibits sufficient mechanical strengths and forms an insulating film permitting to attain a lower dielectric constant than conventional ones, and the like.
SOLUTION: Insulating layers 5, 7 (porous insulating films) provided in a memory capacitor cell 8 is formed between a gate electrode 3 fixed on a silicon wafer 1 and an opposite electrode 8C. The insulating layers 5, 7 are obtained by applying the borazine-based resin composition, which comprises, for example, an organic silicon borazine polymer, ethylbenzene and a poly(α-methylstyrene), by a spin-coating method and drying the coated film.
COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2004137473A Borazine-based resin and method for producing the same, borazine-based resin composition, insulation coating and method for forming the same 有权
公开(公告)号：JP2004137473A
公开(公告)日：2004-05-13
申请号：JP2003317566
申请日：2003-09-09
申请人： Hitachi Chem Co Ltd , National Institute Of Advanced Industrial & Technology , 日立化成工業株式会社 , 独立行政法人産業技術総合研究所
发明人： MATSUTANI HIROSHI , UCHIMARU YUKO
IPC分类号： C08G77/56 , C08G77/60 , C09D5/25 , C09D183/00 , C09D185/00 , H01L21/312
摘要： PROBLEM TO BE SOLVED: To provide an insulation coating and the like containing little metallic impurities and sufficiently suppressing generation of leakage current.
SOLUTION: Interlayer insulation films 5, 7 (insulation coating) lying in a memory capacitor cell 8 is formed between a gate electrode 3 and an opposite electrode 8C installed on a silicone wafer 1. The interlayer insulation films are prepared, e.g., by applying a borazine-based resin composition containing an organic silicon borazine-based polymer and ethylbenzene and having ≥0.5 mass% solid concentration and ≤30 ppm content of metallic impurities by spin coating and drying the same.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2004140342A Composite insulating film 有权
标题翻译：复合绝缘膜
公开(公告)号：JP2004140342A
公开(公告)日：2004-05-13
申请号：JP2003317572
申请日：2003-09-09
申请人： Hitachi Chem Co Ltd , National Institute Of Advanced Industrial & Technology , 日立化成工業株式会社 , 独立行政法人産業技術総合研究所
发明人： MATSUTANI HIROSHI , ABE KOICHI , UCHIMARU YUKO
IPC分类号： B05D7/24 , B32B27/00 , C08G77/56 , C08G77/60 , C08G79/08 , H01L21/312 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a composite insulating film, etc., which can sufficiently lower a dielectric constant, can enhance a mechanical strength and can improve adhesive properties to an upper layer film. SOLUTION: The composite insulating film includes an insulating film 103 (second insulating film) containing an organic silicon borazine resin on an insulating film 102 (first insulating film) containing a siloxane resin formed on a silicon wafer 100 having a silicon base layer provided with a metal wiring layer 101. Such a composite insulating film is simply formed by a spin coating method, etc. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供可以充分降低介电常数的复合绝缘膜等，可以提高机械强度并且可以改善对上层膜的粘合性能。解决方案：复合绝缘膜包括在绝缘膜102（第一绝缘膜）上含有有机硅环硼氮烷的绝缘膜103（第二绝缘膜），第一绝缘膜含有硅基树脂，硅基树脂100具有硅基层设置有金属布线层101.这种复合绝缘膜简单地通过旋涂法等形成。版权所有（C）2004，JPO

8. 发明专利

JP2005104993A Coating agent, method for forming thin film and heat-resistant resin thin film 有权
标题翻译：涂层剂，形成薄膜和耐热树脂薄膜的方法
公开(公告)号：JP2005104993A
公开(公告)日：2005-04-21
申请号：JP2003317585
申请日：2003-09-09
申请人： Hitachi Chem Co Ltd , National Institute Of Advanced Industrial & Technology , 日立化成工業株式会社 , 独立行政法人産業技術総合研究所
发明人： UCHIMARU YUKO , MATSUTANI HIROSHI , KAJI MAKOTO
IPC分类号： C08G77/56 , C08G77/60 , C09D183/05 , C09D183/14 , C09D185/04
摘要： PROBLEM TO BE SOLVED: To provide a borazine-containing silicon polymer-containing coating agent forming a coated film in air, having a sufficiently long gelation time and applicable even to fields requiring an ultrahigh level of heat resistance and durability of an aerospace structure, etc. SOLUTION: The coating agent comprises a propynylborazine-silicon polymer prepared by polymerizing B,B',B"-tris(1'-propynyl)-N,N',N"-trimethylborazine and a silicon compound having at least ≥2 Si-H bonds. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：待解决的问题：为了提供在空气中形成涂膜的含环硼氮烷的含硅聚合物的涂布剂，具有足够长的凝胶化时间，甚至适用于需要超高水平的耐热性和航空航天的耐久性的领域结构等。溶液：包衣剂包括通过聚合B，B'，B“ - 三（1'-丙炔基）-N，N'，N” - 三甲基硼嗪和硅化合物制备的丙炔基硼烷 - 硅聚合物具有至少≥2个Si-H键。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004140341A Insulating film 有权
公开(公告)号：JP2004140341A
公开(公告)日：2004-05-13
申请号：JP2003317568
申请日：2003-09-09
申请人： Hitachi Chem Co Ltd , National Institute Of Advanced Industrial & Technology , 日立化成工業株式会社 , 独立行政法人産業技術総合研究所
发明人： MATSUTANI HIROSHI , UCHIMARU YUKO
IPC分类号： C08G79/08 , C08G77/56 , H01B3/00 , H01B3/30 , H01L21/312
摘要： PROBLEM TO BE SOLVED: To provide an insulating film, etc., which can sufficiently enhance a mechanical strength and electric characteristics. SOLUTION: Interlayer insulating films 5, 7 (insulating films) provided in a memory capacitor cell 8 are formed between a gate electrode 3 and an opposed electrode 8 provided on a silicon wafer 1. The films 5, 7 each contains an organic silicon borazine polymer in such a manner that a relative permittivity is 2.6 or less, a Young' modulus is 5 GPa or more and leakage current is 1×10 -8 A/cm 2 or less. COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2005060493A Silicon carbide-based separation membrane and method for producing the same 有权
标题翻译：基于碳化硅的分离膜及其制造方法
公开(公告)号：JP2005060493A
公开(公告)日：2005-03-10
申请号：JP2003291187
申请日：2003-08-11
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： SUDA HIROYUKI , UCHIMARU YUKO , HARATANI KENJI
IPC分类号： B01D71/02 , C01B31/36 , C04B35/571 , C08G77/60
摘要： PROBLEM TO BE SOLVED: To obtain a silicon-based precursor polymer by a reaction method for controlling the mixing of oxygen considered as a cause of reduction in weather resistance and a silicon carbide-based material, and to prepare a separation membrane comprising the silicon carbide-based material, and to provide methods for producing them. SOLUTION: The silicon-based precursor polymer is obtained by reacting a polycarbosilane with a specific diyne or a B,B',B"-trialkynylborazine. The silicon carbide-based material is obtained by thermally decomposing and/or firing a mixture of the polycarbosilane and the diyne or the B,B',B"-trialkynylborazine or the silicon-based precursor polymer. The silicon carbide-based separation membrane is constituted of the material. The methods for producing them are also provided. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了通过用于控制被认为是耐候性降低的原因的氧的混合的反应方法和碳化硅类材料来获得硅基前体聚合物，并且制备分离膜，其包括碳化硅基材料，并提供其制造方法。解决方案：硅基前体聚合物是通过使聚碳硅烷与特定的二炔或B，B'，B“ - 三炔基硼化物反应得到的，碳化硅基材料是通过热分解和/或烧制混合物得到的的聚碳硅烷和二炔或B，B'，B“ - 三炔基硼嗪或硅基前体聚合物。该碳化硅系分离膜由该材料构成。还提供了生产它们的方法。版权所有（C）2005，JPO＆NCIPI

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