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1. 发明专利

JP2014067809A Power semiconductor module and manufacturing method of the same 审中-公开
标题翻译：功率半导体模块及其制造方法
公开(公告)号：JP2014067809A
公开(公告)日：2014-04-17
申请号：JP2012210974
申请日：2012-09-25
申请人： Hitachi Automotive Systems Ltd , 日立オートモティブシステムズ株式会社
发明人： KUME TAKASHI , ASANO MASAHIKO , YOSHINARI HIDETO , FUJINO SHINICHI
IPC分类号： H01L25/18 , H01L21/52 , H01L25/07
CPC分类号： H01L24/83 , H01L2224/37 , H01L2224/37124 , H01L2224/40 , H01L2224/40095 , H01L2224/40137 , H01L2224/83801 , H01L2224/84801 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To appropriately set balance of a heat dissipation performance, a linear expansion coefficient, a current path and the like to obtain a power semiconductor module having constant characteristics and high reliability.SOLUTION: A power semiconductor module comprises: a collector electrode 61 that is formed on one surface of a power semiconductor element 31U and is soldered on a conductor plate 35 by a solder material 43; and an emitter electrode 62 that is formed on the other surface of the power semiconductor element 31U and is soldered on a conductor plate 33 by a solder material 44. The conductor plate 35 has a plurality of recesses 71, each of which houses one metal spacer 50. A part of the metal spacer 50 projects from the recess 71 and the power semiconductor element 31U is soldered in contact with the metal spacer 50 at the part projected from the recess 71.
摘要翻译：要解决的问题：为了适当地设定散热性能，线性膨胀系数，电流路径等的平衡，以获得具有恒定特性和高可靠性的功率半导体模块。解决方案：功率半导体模块包括：集电极 61，其形成在功率半导体元件31U的一个表面上，并通过焊料43焊接在导体板35上; 以及形成在功率半导体元件31U的另一个表面上并通过焊料44焊接在导体板33上的发射电极62.导体板35具有多个凹部71，每个凹部71容纳一个金属间隔物金属间隔件50的一部分从凹部71突出，并且功率半导体元件31U在从凹部71突出的部分处与金属间隔件50接触地被焊接。

2. 发明专利

JP2014045157A Power semiconductor module 审中-公开
标题翻译：功率半导体模块
公开(公告)号：JP2014045157A
公开(公告)日：2014-03-13
申请号：JP2012188207
申请日：2012-08-29
申请人： Hitachi Automotive Systems Ltd , 日立オートモティブシステムズ株式会社
发明人： KUME TAKASHI , YOSHINARI HIDETO , FUJINO SHINICHI
IPC分类号： H01L25/18 , H01L23/34 , H01L25/07 , H02M7/48
CPC分类号： H01L2224/36 , H01L2224/40 , H01L2224/40137 , H01L2224/83801 , H01L2224/8384 , H01L2224/8385 , H01L2224/84801 , H01L2224/8484 , H01L2224/8485 , H01L2924/00014 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/37099 , H01L2224/37599
摘要： PROBLEM TO BE SOLVED: To provide a structure which further improves heat dissipation performance of a power semiconductor module.SOLUTION: A semiconductor module comprises: a first conductor plate opposite to one surface of a first power semiconductor element; a second conductor plate opposite to the first conductor plate across the first power semiconductor element; a third conductor plate arranged lateral to the first conductor plate; a fourth conductor plate which is arranged lateral to the second conductor plate and opposite to the third conductor plate across a second power semiconductor element; and an intermediate connection terminal 34c protruding from an edge of the first conductor plate which is closest to the third conductor plate. The third conductor plate includes a recess 38 formed on an edge of the third conductor plate. When projected from a direction perpendicular to one surface of the second power semiconductor element, the recess 38 is formed such that a projection of the recess 38 overlaps a projection of the fourth conductor plate, and the intermediate connection terminal 34c is formed such that a projection of the intermediate connection terminal 34c overlaps the projection of the recess 38.
摘要翻译：要解决的问题：提供进一步提高功率半导体模块的散热性能的结构。解决方案：半导体模块包括：与第一功率半导体元件的一个表面相对的第一导体板; 与所述第一导体板相对的跨越所述第一功率半导体元件的第二导体板; 第三导体板，布置在第一导体板的侧面; 第四导体板，跨越第二功率半导体元件布置在第二导体板的侧面并与第三导体板相对; 以及从最靠近第三导体板的第一导体板的边缘突出的中间连接端子34c。第三导体板包括形成在第三导体板的边缘上的凹部38。当从垂直于第二功率半导体元件的一个表面的方向投影时，凹部38形成为使得凹部38的突起与第四导体板的突起重叠，中间连接端子34c形成为使得突起中间连接端子34c与凹部38的突出部重叠。

3. 发明专利

JP2013069825A Double side cooling type semiconductor power module 审中-公开
标题翻译：双面冷却型半导体功率模块
公开(公告)号：JP2013069825A
公开(公告)日：2013-04-18
申请号：JP2011206785
申请日：2011-09-22
申请人： Hitachi Automotive Systems Ltd , 日立オートモティブシステムズ株式会社
发明人： YAMASHITA SHIRO , SAKAMOTO EIJI , YOSHINARI HIDETO , KUME TAKASHI
IPC分类号： H01L23/36 , H01L25/07 , H01L25/18
CPC分类号： H01L24/33 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To prevent short circuits from occurring between lead frames and in a semiconductor chip surface due to overflowing solder while inhibiting the deterioration of heat radiation performance and the reliability of a semiconductor chip in a double side cooling type semiconductor power module.SOLUTION: A double side cooling type semiconductor power module includes: a semiconductor element; a first lead frame where a first protruding surface is connected with an electrode part formed on one surface of the semiconductor element by solder; a second lead frame where the one surface of the semiconductor element is connected with an electrode part formed on a surface at the opposite side of the one surface by solder; a first heat radiation member thermally connecting with the first lead frame; and a second heat radiation member thermally connecting with the second lead frame. In the double side cooling type semiconductor power module, the first protruding surface has a shape smaller than the electrode part which is formed on the one surface of the semiconductor element and is connected with the first protruding surface by the solder. The dimension differences between the shapes of the first protruding surface and the electrode part are configured to differ in the direction of the first protruding surface.
摘要翻译：要解决的问题：为了防止引线框架和半导体芯片表面中由于溢出焊料而发生短路，同时抑制双侧冷却型半导体电源中的散热性能的劣化和半导体芯片的可靠性模块。解决方案：双面冷却型半导体功率模块包括：半导体元件; 第一引线框架，其中第一突出表面通过焊料与形成在半导体元件的一个表面上的电极部分连接; 第二引线框架，其中所述半导体元件的一个表面与通过焊料在所述一个表面的相对侧的表面上形成的电极部分连接; 与第一引线框架热连接的第一散热构件; 以及与所述第二引线框架热连接的第二散热构件。在双面冷却型半导体功率模块中，第一突出面的形状比形成在半导体元件的一个面上的电极部的形状小，并且通过焊料与第一突出面连接。第一突出表面和电极部分的形状之间的尺寸差异被构造成在第一突出表面的方向上不同。版权所有（C）2013，JPO＆INPIT

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