专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH08212519A MAGNETORESISTANCE TYPE MAGNETIC HEAD 失效
公开(公告)号：JPH08212519A
公开(公告)日：1996-08-20
申请号：JP1727895
申请日：1995-02-03
申请人： HITACHI METALS LTD
发明人： KAWAI TETSUO , TOBIYO MASAHIRO , IDEI TOSHIYUKI , KIKUCHI KEIKO
IPC分类号： G11B5/31 , G11B5/39
摘要： PURPOSE: To weaken the magnetic field leaking from permanent magnet film to the extent of suppressing noise generation and to increase the reproduced output by using a magnet film having intra-surface anisotropy and having a residual magnetic flux density within a specific range for the permanent magnet film. CONSTITUTION: Ground surface films 17, permanent magnet films 16 and magneto-resistance effect films 13 are laminated across a soft magnetic bias film 15 and a magnetical sepn. film 14 via an insulating film 18 on a lower shielding film 7 on a substrate 9. Further, electrodes 12 are formed across an insulatable track width regulating layer 11 and an upper shielding film 5 is formed via the insulating film 18. A CoCrNi alloy is used as the permanent magnet films 16. Films controlled in the residual magnetic flux density to 0.2 to 0.6 are used as the films having the intra-surface anisotropy. As the result, Barkhausen noise is suppressed and the reproduced output is increased.

2. 发明专利

JPH07334812A INDUCTION TYPE MAGNETIC HEAD 失效
公开(公告)号：JPH07334812A
公开(公告)日：1995-12-22
申请号：JP12150894
申请日：1994-06-02
申请人： HITACHI METALS LTD
发明人： KAWAI TETSUO , SAKAGUCHI ISAO , SUZUKI MASARU , SUDO SHUJI , KIKUCHI KEIKO
IPC分类号： G11B5/127 , G11B5/23
摘要： PURPOSE:To enable adaptation up to a high frequency by forming a metallic film near a magnetic gap on each of the surface of an I-shaped core and the surface of a C-shaped core and laminating a nonmagnetic electric conductive film on the magnetic film on the surface of the C-shaped core. CONSTITUTION:Each of an I-shaped core chip 2 and a C-shaped core chip 3 is formed with single-crystalline ferrite 4 and an FeAlSi film 6 is formed by sputtering on the apex part of each of the cores. In this case, the FeAlSi film is formed as a metallic film but a film of an FeTaN or FeTaC type metallic soft magnetic material also produces the essentially same effect. A nonmagnetic electric conductive film 7 of Cu is then formed by diagonal sputtering on the apex part of the C-shaped core. Even when a film of Mo, Ni, Nb, W, etc., is used as the film 7, a similar effect is expected.

3. 发明专利

JPH07235009A MAGNETIC HEAD AND MAGNETIC DISK DEVICE USING THE SAME 失效
公开(公告)号：JPH07235009A
公开(公告)日：1995-09-05
申请号：JP2647894
申请日：1994-02-24
申请人： HITACHI LTD , HITACHI METALS LTD
发明人： OTOMO MOICHI , KIRINO FUMIYOSHI , MORIWAKI HIDETOSHI , KAWAI TETSUO , KUDO SANEHIRO
IPC分类号： G11B5/11 , G11B5/02 , G11B5/127
摘要： PURPOSE:To drastically decrease noises due to magnetorestriction vibrations of ferrite by adhering a nonmagnetic metallic material to at least a part of the side faces of ferrite cores. CONSTITUTION:A metal-in-gap type head chip obtd. by forming an FeAlSi alloy film of a thickness 2mum on the gap surfaces of the cores consisting of an MnZn ferrite single crystal is used as a head chip 10. This head chip 10 is first fixed to a slider with a joining material consisting of glass near the surface for facing media and is further wound with windings 14. Next, an epoxy resin is applied over the entire part of the head chip in the state of not adhere a reinforcing material 18 of the rear part core and is cured to form an insulating layer 13. A Cu film is formed thereon by an electroless plating method to form a nonmagnetic metallic material 12. An org. material, such as resist material soluble in an org. solvent, is applied on the part where the nonmagnetic material is not formed and the resist material is dissolved by the org. solvent after the formation of the Cu film to prevent adhesion. The film thickness of the nonmagnetic metallic material is specified to be 30mum.

4. 发明专利

JPH05342531A 失效
公开(公告)号：JPH05342531A
公开(公告)日：1993-12-24
申请号：JP15183592
申请日：1992-06-11
申请人： HITACHI METALS LTD
发明人： TAKEDA SHIGERU , KAWAI TETSUO , KASAKOSHI TOSHIYUKI , ITO CHIKAICHI
IPC分类号： G11B5/31
摘要： PURPOSE:To widen the width of magnetic poles by flatly constituting the magnetic circuit of the magnetic head and making the sliding surface of the magnetic head and the film surfaces of magnetic cores parallel to each other. CONSTITUTION:Lower striped conductive films 2b are formed on a substrate 1 and the lower magnetic core 4b is deposited and formed via an insulating layer 3c on the films 2b. Upper striped conductive films 7a are formed via the insulating layer on the core 4a. The lower magnetic core 4a of the thin-film magnetic head having the helical conductive coils formed by connecting the ends of the conductive films 2b, 7a of the lower part and the upper part consists of the two magnetic thin films and these thin films are arranged in a straight shape apart at a specified spacing. The helical coils are respectively wound around the lower magnetic cores 4a, 4b and the upper magnetic core 6 is formed on the ends of the two cores 4a, 4b facing each other. The lower magnetic core 4a and the upper magnetic core 6 are magnetically joined and a head gap 5 is formed in a part of the upper magnetic core 6. The sliding surface of the gap 6 is made parallel with the film surface of the upper magnetic core 6.

5. 发明专利

JPH05342529A 失效
公开(公告)号：JPH05342529A
公开(公告)日：1993-12-24
申请号：JP15183692
申请日：1992-06-11
申请人： HITACHI METALS LTD
发明人： TAKEDA SHIGERU , KAWAI TETSUO , KASAKOSHI TOSHIYUKI , ITO CHIKAICHI
IPC分类号： G11B5/31
摘要： PURPOSE:To obtain magnetic field thin-film resistance with decreased leakage magnetic fields and decreased malfunctions by making a sliding surface and a magnetic core film surface parallel to each other and efficiently absorbing the magnetic fields generated by a conductor coil into the magnetic core. CONSTITUTION:Striped conductive films are formed in a prescribed manner on a substrate 1 and are coated with an insulating layer 3a. The U-shaped magnetic core 4 is deposited thereon and the two sides are made parallel to each other. Both ends thereof are exposed on the end face of the substrate 1. The surface is coated with an insulating layer 3b. Through-holes 10a, 10b, 10c are provided by selectively etching away the insulating layer to expose both ends of the core 4 as well. A nonmagnetic spacer 11 is superposed on the part to be formed with a head gap 5. Striped conductive films 7a, 7b are joined to the conductive films to form a helical coil. The core is formed on the core 4 via a spacer 11. The groove of a head gap 3 is formed at the center of the core. The insulating layer 3c is so formed as to expose the gap 5 and the magnetic head is completed.

6. 发明专利

JPH01199459A ALUMINUM VAPOR-DEPOSITED LEAD FRAME 失效
公开(公告)号：JPH01199459A
公开(公告)日：1989-08-10
申请号：JP30436388
申请日：1988-12-01
申请人： HITACHI METALS LTD
发明人： KAWAI TETSUO , SAKAKIBARA MASAHIKO , HARA HISAO
IPC分类号： C23C14/20 , H01L23/50
摘要： PURPOSE:To reduce the vulnerability to moisture of an aluminum-vapordeposited lead frame and to render it excellent in withstanding corrosion by a method wherein the aluminum film is so vapor-deposited as to exceed a specified value relative to the plane (111) in crystal orientation. CONSTITUTION:A vapor-deposited aluminum film is so designed in crystal orientation as to exceed 70% relative to the plane (111). The rate of orientation relative to the plane (111) is expected to be 50-60% when a routine technique is employed of aluminum evaporation in vacuum. When the ion plating method or the like is applied for film formation, wherein the abundance of aluminum ions may be effectively controlled, 70% or more orientation may realize relative to the plane (111). In the high-frequency ion-plating method, aluminum ion abundance may be controlled simply by changing the high-frequency power. For example, a 2mum-thick Al film, 85% in orientation relative to the plane (111), may be formed on a 42% Ni-Fe lead frame in a 2X10 Torr Ar atmosphere at a 300W high-frequency power.

7. 发明专利

JPH0127142B2 失效
公开(公告)号：JPH0127142B2
公开(公告)日：1989-05-26
申请号：JP15111780
申请日：1980-10-28
申请人： HITACHI METALS LTD
发明人： KAWAI TETSUO , HARA HISAO
IPC分类号： C22C29/02 , C22C29/00 , C22C29/06 , C22C29/16

8. 发明专利

JPS6372491A PROCESSING METHOD FOR THERMAL DECOMPOSITION TYPE BORON NITRIDE STOCK 失效
公开(公告)号：JPS6372491A
公开(公告)日：1988-04-02
申请号：JP21848386
申请日：1986-09-17
申请人： HITACHI METALS LTD
发明人： TSUNEMATSU HIROYUKI , KAWAI TETSUO
IPC分类号： B23K26/40 , B23K26/38
摘要： PURPOSE:To improve processing efficiency and to improve the quality and accuracy of a product by projecting laser light to a thermal decomposition type boron nitride stock to melt the stock and blowing off the melt by an assist gas consisting of O2. CONSTITUTION:The laser light 4 which oscillates continuously or oscillate at 1000Hz frequencies is projected to a P-BN material 1 to melt the material, then the melt is blown off by the assist gas 3 consisting of O2. The processing speed is preferably low in the case of pulse oscillation. The processing surface is finished smooth without being colored and the dimensional accuracy is improved by the above-mentioned method.

9. 发明专利

JPS6236009A THERMAL DECOMPOSITION TYPE BORON NITRIDE 失效
公开(公告)号：JPS6236009A
公开(公告)日：1987-02-17
申请号：JP17119985
申请日：1985-08-05
申请人： HITACHI METALS LTD
发明人： KAWAI TETSUO , SHIDORI KUNIO
IPC分类号： C01B21/064 , C23C14/24 , C23C16/34 , C30B15/10 , C30B23/00
摘要： PURPOSE:To decrease the laminar surface exfoliation which is observed with the conventional thermal decomposition type boron nitride crucible and to extend the life of the crucible by forming the thermal decomposition type boron nitride in such a manner that the X-ray diffraction intensity of the hexagonal boron nitride is made smaller than the X-ray diffraction intensity of the boron nitride having the irregular laminar structure in the crystal structure of the thermal decomposition type boron nitride. CONSTITUTION:This thermal decomposition type boron nitride has the crystal structure consisting of the hexagonal boron nitride and the boron nitride of the irregular laminar structure having the larger inter-plane spacing of the C plane than the hexagonal boron nitride and has the diffraction strength of the hexagonal boron nitride smaller than the diffraction intensity of the boron nitride of the irregular laminar structure in the X-ray diffraction. The laminar surface exfoliation is prevented simply by controlling the lamination state of the C plane in the stage of forming the film of the boron nitride by a thermal decomposition method, for example, CVD method. The lamination state of the C plane is controllable by, for example, CVD conditions and the examination of the lamination state is possible by X-ray diffraction.

10. 发明专利

JPS6140304B2 失效
公开(公告)号：JPS6140304B2
公开(公告)日：1986-09-08
申请号：JP19659781
申请日：1981-12-07
申请人： HITACHI METALS LTD
发明人： KAWAI TETSUO , PPONDA HARUHIKO , YAMADA HIROHIDE , HARA HISAO
IPC分类号： C23C16/44 , C23C16/455 , C23C16/52 , H01J37/32 , H01L21/205 , H01L21/285

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式