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1. 发明专利

JPS62165958A SOCKET FOR MEASURING ELECTRIC CHARACTERISTICS OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62165958A
公开(公告)日：1987-07-22
申请号：JP646286
申请日：1986-01-17
申请人： HITACHI VLSI ENG , HITACHI LTD
发明人： BABA TERUYOSHI , MIZUE KATSUYA , SONODA YASUHIRO , OURA TAKAYUKI , IRIKURA SHOGO
IPC分类号： G01R31/26 , G01R31/28 , H01L23/32 , H01R33/76
摘要： PURPOSE:To accurately measure the high frequency characteristics and the like of a semiconductor device by so composing that forces are operated to the inserting and perpendicular directions of the device to connect its lead pin to a socket. CONSTITUTION:When the electrode 12B of a chip carrier 12 is placed on the end 10A of the lead pin 10 provided at a socket body 15 and a cover 11 is closed, the pin 10 is engaged with the groove 12A on the side of the carrier 12, the electrode 12B is pressed by the end 10A of the pin to a carrier inserting direction and a perpendicular direction, supported by a supporting portion 12C, and mechanically and electrically effectively bonded. When the lower portion 10D of the pin is linearly minimized in size, the electric capacity, inductance and resistance value of the socket can be reduced to minimize the influence at the time of measuring characteristics.

2. 发明专利

JPS6465906A AMPLIFIER CIRCUIT 失效
公开(公告)号：JPS6465906A
公开(公告)日：1989-03-13
申请号：JP22160087
申请日：1987-09-04
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： IRIKURA SHOGO , TSUJI KOSUKE , KAMEYAMA SADAFUMI , BABA TERUYOSHI , OURA TAKAYUKI
IPC分类号： H03F3/343 , H03F3/34
摘要： PURPOSE:To reduce the dependency upon a power source voltage variation of an output voltage without being influenced on an amplification factor by making an input transistor let a current corresponding to an input voltage flow from a coupling node with a load element, and further, letting the current corresponding to the change of the power source voltage flow from said coupling node by the action of a second current source. CONSTITUTION:The second current source BCS causes a current change corresponding to the change of the power source voltage Vcc between the coupling node ND and a second power source terminal VEE, and generates a potential difference, scarecely dependent upon the change of the power source voltage Vcc, at both ends of a load resistance RL. Then, it lets the current Ibias having a tendency to cancel the voltage difference variation of both ends of the load resistance RL according to the variation of the power source voltage Vcc flow. Namely, it the power source voltage Vcc is raised or lowered higher/lower than a reference potential, the current Ibias is increased or decreased by a portion necessitated to cancel the rise portion of the drop portion of the output voltage Vout according to the change of the power source voltage Vcc. Accordingly, the dependency upon the power source voltage variation of the output voltage is lowered without being influenced upon the amplification factor.

3. 发明专利

JPH02144871A SOCKET FOR FITTING IC 失效
公开(公告)号：JPH02144871A
公开(公告)日：1990-06-04
申请号：JP29812388
申请日：1988-11-28
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： TSUJI KOSUKE , KAMEYAMA SADAFUMI , IRIKURA SHOGO , BABA TERUYOSHI , OURAKI TAKAYUKI
IPC分类号： H01R33/76 , H05K1/18
摘要： PURPOSE:To prevent the oscillation of an IC by extracting a fitting lead to the wiring board of a socket from the contact position between an IC lead and a U-shaped contact section to be brought into contact with the IC lead. CONSTITUTION:A U-shaped contact section 10 is set to the lateral direction, and a socket lead 5 is provided on the bottom face of the movable side 10B of the contact section 10 and below the contact position between an IC lead 9 and the contact section 10. The socket lead 5 is extracted from the position in contact with the IC lead 9. An IC can be neared to the directly fitted state to a wiring board 11, and the inductance component is further decreased. When a bypass capacitor is added, its effect is exerted, and oscillation can be prevented.

4. 发明专利

JPS567427A SEMICONDUCTOR PELLET 失效
公开(公告)号：JPS567427A
公开(公告)日：1981-01-26
申请号：JP8134979
申请日：1979-06-29
申请人： HITACHI LTD , HITACHI OME ELECTRONIC CO
发明人： BABA TERUYOSHI
IPC分类号： H01L21/822 , H01L21/02 , H01L27/04
摘要： PURPOSE:To provide availability of a semiconductor pellet in avoiding occurrence of malfunction of the same type thereafter by providing history identifying means at the pellet. CONSTITUTION:A number of bonding pads 11 are formed along four sides of a pellet 10 on the passivation film on the surface of the pellet 10. History display elements 12A-12D are formed at corresponding four corners of the pellet 10 with common treatment to the formation of the pads 11. The elements 12A-12D consists of a diffusion treatment for forming a P-N junction, a passivation treatment, a treating lot for treating wiring or the like, and a history identifying means for identifying the water, to identify the history by the combination of different display states. In this manner, when the malfunctioned part is disassembled, it can readily notify which lot and wafer malfunction. As a result, it can easily contrive the shooting of malfunction in a circuit of the same type thereafter.

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