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1. 发明专利

JPS55165261A ROLL DEVICE FOR RAPID COOLING OF MOLTEN METAL 失效
公开(公告)号：JPS55165261A
公开(公告)日：1980-12-23
申请号：JP7358279
申请日：1979-06-13
申请人： HITACHI LTD , HITACHI METALS LTD
发明人： SUZUKI HIDEO , IKUTA ISAO , TOMITA SADAMI , ISHIHARA JIYOU , TAMAMURA TAKEO
IPC分类号： B22D11/06
摘要： PURPOSE:To prevent flying of molten metal and make the shape of frozen metal thin strip surface even by providing the coating layer of metal of good wettability with molten metal on the surface of a roll made of metal of good heat conductivity. CONSTITUTION:The surface of a roll 6 of metal of good heat conductivity such as copper or copper alloy is coated with material which is difficult to be abraded by molten metal of iron, chromium, nickel or their alloys by such a method as chemical plating. When this roll 6 is rotated in the arrow direction and molten metal 3 is spouted from the end of a nozzle 2 onto the surface thereof, the fyling of the molten metal is prevented and the cooling capacity of the roll is improved as well by the improvement in adhesiveness. The surface roughness and the sectional shape of the resultant amorphous metal thin strip 4 may be considerably improved.

2. 发明专利

JPS51130768A BRAKE MECHANISM 失效
公开(公告)号：JPS51130768A
公开(公告)日：1976-11-13
申请号：JP5455675
申请日：1975-05-12
申请人： HITACHI LTD
发明人： SHIMODAIRA TOYOHISA , SATOU AKIO , TAMAMURA TAKEO
IPC分类号： C22C21/02 , C09K3/14 , F16D65/10 , F16D65/12 , F16D69/02
摘要： PURPOSE:To obtain a low cost, light weight and long lasting brake mechanism.

3. 发明专利

JPS57124459A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS57124459A
公开(公告)日：1982-08-03
申请号：JP905181
申请日：1981-01-26
申请人： Hitachi Ltd
发明人： OONUKI HITOSHI , TAMAMURA TAKEO , KUNIYA KEIICHI , CHIBA AKIO , FUNIYUU MASAO
IPC分类号： H01L23/40 , H01L21/52 , H01L23/492
CPC分类号： H01L23/4928 , H01L24/32 , H01L2924/01029
摘要： PURPOSE:To bond a Cu-C complex and a radiating plate strongly within the range that the complex is not expanded by bonding a buffer plate and the radiating plate by using a solder material consisting of 15wt% Cu, 1-5wt% Ag and P. CONSTITUTION:The buffer plate and the radiating plate are bonded by using the solder material composed of 15wt% Cu, 1-5wt% Ag and P. The Cu-C complex is hardly expanded because both plates can be bonded at 700 deg.C or lower through the bonding method. The solder material of 15wt% Cu, 1-5wt% Ag and P is approximately equal to Ag in thermal conductivity, and does not form a large number of voids as solder. The Cu-C complex may be manufactured by knitting C fibers in a latticed shape, arranging the fibers in a Cu matrix shape at randum or spirally disposing them.
摘要翻译：目的：通过使用由15重量％的Cu，1-5重量％的Ag和P组成的焊料材料，通过使缓冲板和散热板接合而在复合体不膨胀的范围内使Cu-C复合物和散热板牢固地结合构成：缓冲板和散热板通过使用由15重量％的Cu，1-5重量％的Ag和P组成的焊料材料结合。由于两个板可以在700℃粘合，所以Cu-C复合物几乎不膨胀或更低。 15wt％Cu，1-5wt％Ag和P的焊料材料的导热率近似等于Ag，并且不会形成大量作为焊料的空隙。 Cu-C复合物可以通过编织格子状的C纤维来制造，将纤维以Cu矩阵形状排列成盘形或螺旋状地布置。

4. 发明专利

JPS571590A JOINING METHOD FOR A OR A ALLOY MEMBER 失效
公开(公告)号：JPS571590A
公开(公告)日：1982-01-06
申请号：JP7560680
申请日：1980-06-06
申请人： HITACHI LTD
发明人： MIYAZAKI KUNIO , TAMAMURA TAKEO , OOGOSHI YUKIO , KUMAGAI AKIRA , SUZUKI HITOSHI , SUZUKI HIDEO , OCHIAI IZUMI , TOMOSAKI RIYOUZOU
IPC分类号： B23K20/00 , B23K1/19 , B23K103/10
摘要： PURPOSE:To join a base material with high toughness, airtightness and corrosion resistance through mixing oxide films in base metals into an eutectic liquid phase and expelling the same to the outside of fayed surfaces, by interposing an Al-Si alloy contg. a specific amount of Si in the joining part, and pressing these under heating, in hoining Al or Al alloys to themselves. CONSTITUTION:A thin strip 3 made by quickly cooling and solidifying molten alloy contg. 12-35wt% Si and consisting of the balance Al is interposed between the fayed surfaces of Al or Al alloy members 1A, 1B. Next, when these are heated to an eutectic point by a high frequency heating coil 4, part of the strip 3 melts and liquefies; at the same time, excess Si more than the eutectic composition reacts with the base materials 1A, 1B, thereby forming melt. Thence, the oxide films of the base materials are broken down and mixed into the melt. The eutectic melt is expelled by large pressure and the fresh surfaces of the base materials are press-contacted to each other. The reason for limiting the amount of Si lies in that at below 12wt% the oxide films do not cause sufficient breakdown. Above 35wt%, the production is difficult and the effect is saturated.

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