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1. 发明专利

JPS6379360A LEAD FRAME FOR RESIN-SEALED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6379360A
公开(公告)日：1988-04-09
申请号：JP22356286
申请日：1986-09-24
申请人： HITACHI METALS LTD , HITACHI LTD
发明人： MATSUMOTO SHUNICHIRO , OKIKAWA SUSUMU , SUZUKI HIROMICHI , KITAMURA WAHEI , MIKINO HIROSHI
IPC分类号： H01L23/50 , H01L23/28
摘要： PURPOSE:To eliminate a gap at an interface between a surface, which is not a semiconductor mounting surface, and resin, in a lead frame for a resin-sealed semiconductor device, by forming a conducting thin film having good adhesion with the resin only at a part required for wire bonding. CONSTITUTION:A conducting thin film 8 comprising, e.g., aluminum, aluminum alloy or the like having good adhesion with resin, is formed only at a part of each lead 5, which is required for at least wire bonding. Then an interface between the thin film 8 and the lead is rigidly bonded chemically. Therefore, a gap is not formed at the interface between the surface, which is not a semiconductor mounting chip 2, and the resin.

2. 发明专利

JPS60177666A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60177666A
公开(公告)日：1985-09-11
申请号：JP3243384
申请日：1984-02-24
申请人： HITACHI LTD , HITACHI METALS LTD
发明人： OKIKAWA SUSUMU , MIKINO HIROSHI , SUZUKI HIROMICHI , KITAMURA WAHEI , SAKAMOTO DAIJI
IPC分类号： H01L21/60 , C22C21/00 , H01L23/49
摘要： PURPOSE:To prevent corrosion and to connect positively, by including Ni in a wire mainly containing Al and by selecting Vickers hardness of the ball among the area of 35-45. CONSTITUTION:Ni is mainly effective in order to improve corrsion resistance of a wire 4 which mainly contains Al, and addition of Mn, Mg, Si, Fe, etc. is effective in order to control harndness of the ball. Moreover, these elements do not spoil the effects of the corrosion resistance and hardness control each other. Mn of 0.5 or 1.0% for Ni of 1%, Mn of 1.0 for Ni of 0.5% or Mg of 1.7% and Fe of 0.5% for Ni of 0.5%, or Si of 2% or 1% for Ni of 2%, each represented in wt%, is mixed. By using the Al-alloy wire with such a composition, better corrosion resistance, Vickers hardness of the ball of 35-45, and sufficient strength connecting the wire are attained. Moreover, reliable connection without over-crushing or pad damage is possible with much lower cost than Au wire.

3. 发明专利

JPS60177637A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60177637A
公开(公告)日：1985-09-11
申请号：JP3243484
申请日：1984-02-24
申请人： HITACHI LTD , HITACHI METALS LTD
发明人： OKIKAWA SUSUMU , KITAMURA WAHEI , SUZUKI HIROMICHI , MIKINO HIROSHI , SAKAMOTO DAIJI
IPC分类号： H01L21/60 , C22C21/00 , H01L23/49
摘要： PURPOSE:To contrive improve the reliability of products of semiconductor device by a method wherein the breaking strength of the junction wires at a time after the device was sealed in a package is selected to a strength of more than about 6gr per wire of a diameter of 30mum and the breaking of the wires are prevented by the enhanced breaking strength. CONSTITUTION:During the manufacture of a semiconductor device sealed in a ceramic package, junction wires 4 mainly constituting of Al are inevitably performed an annealing for a 10min at 400-500 deg.C and the temperature of the Al wires 4 reaches the recrystallization temperature or a temperature close to it, though the temperature is different according to materials used for making the Al wires 4. Meanwhile, the strength of a wire at a time before an annealing is performed to the wire depends upon the work degree and the material used for making the wire and the strength of the wire at a time after an annealing was performed depends upon the material used for making the wire, but when the wire was subjected to an annealing at a temperature near the recrystallization temperature, the fast that the strength of the wire depends on the past record of the wire is lost. When the breaking strength of a wire is selected to a strength of more than about 20gr per wire of a diameter of 30mum at a time before the semiconductor device is sealed in the package, the breaking strength of the wire can be secured being needed for the wire drawing working, and when the breaking strength of the wire is selected to a strength of more than about 6gr per wire of a diameter of 30mum at a time after the semiconductor device was sealed in the package (after an annealing was performed), the breaking strength of the wire can be ensured in a mechanical strength endurable fully against breaking. As a result, the reliability of products of semiconductor device can be secured.

4. 发明专利

JPS61296730A WIRE BONDER 失效
公开(公告)号：JPS61296730A
公开(公告)日：1986-12-27
申请号：JP13777085
申请日：1985-06-26
申请人： HITACHI LTD , HITACHI METALS LTD
发明人： SUZUKI HIROMICHI , MIKINO HIROSHI , KITAMURA WAHEI , MATSUMOTO SHUNICHIRO
IPC分类号： H01L21/60 , H01L21/00 , H01L21/68
摘要： PURPOSE:To improve reliability of bonding by providing a bonding stage with a lead frame fixing mechanism utilizing magnetic force. CONSTITUTION:A block type permanent magnet 23, which is tied to a bonding stage main part 20 by springs 22, is provided under a stage board 19. The permanent magnet 23 is linked with a linking member 25 which is moved vertically by an eccentric cam 24. In other words, the permanent magnet 23 is moved vertically in accordance with the rotation of a permanent magnet driving motor 26 an maintains contact state or noncontact state at the predetermined position. With this constitution, a lead frame 2 on the stage board 19 is attracted onto the stage plane of the stage board 19 by the magnetic force of the permanent magnet 23 and becomes fixed.

5. 发明专利

JPS60177667A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60177667A
公开(公告)日：1985-09-11
申请号：JP3243584
申请日：1984-02-24
申请人： HITACHI LTD , HITACHI METALS LTD
发明人： OKIKAWA SUSUMU , KITAMURA WAHEI , SUZUKI HIROMICHI , MIKINO HIROSHI , SAKAMOTO DAIJI
IPC分类号： H01L21/60 , C22C21/00 , H01L23/49
摘要： PURPOSE:To improve mechanical strength and corrosion resistance and to inapprox.= crease reliability of a resin-sealed device, by including Fe and Pd, or Ni, Mg, Mn and Si and Pd of respective predetermined amounts in a wire mainly composed of Al. CONSTITUTION:Adding Fe, Pd or Ni into a wire mainly composed of Al increses corrosion resistance and moreover, adding Mg, Mn and Si increases mechanical strength. In this case, Pd of 0.05-3% for Fe of 0.05-3%, each being represented in wt%, is added to increase corrosion resistance of an alloy wire 4, or Ni, Pd and Fe of each 0.05-3% and Mg, Mn and Si of each 0.5-3% are added to increase mechanical strength as well as corrosion resistance to provide a high-reliable resin-sealed device.

6. 发明专利

JPS60161650A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60161650A
公开(公告)日：1985-08-23
申请号：JP1523184
申请日：1984-02-01
申请人： HITACHI LTD , HITACHI METALS LTD , TANAKA ELECTRONICS IND
发明人： OKIKAWA SUSUMU , SUZUKI HIROMICHI , MIKINO HIROSHI , KITAMURA WAHEI , SAKAMOTO DAIJI , MATSUBARA SATORU , YAMAMOTO TAIYOU
IPC分类号： H01L21/60 , H01L23/49
摘要： PURPOSE:To check corrosion of bonding wires, and to enhance reliability of a semiconductor device by a method wherein the bonding wire is formed of the main component of aluminum containing nickel of 0.03wt% or more. CONSTITUTION:A pellet 3 of silicon (Si), etc. is fitted according to gold-silicon eutectic, etc. to a tab 2 consisting of the 42 alloy or a copper alloy, for example, the bonding pads (the electrodes) of the pellet 3 thereof and the inner lead parts 4 (the outside conductive parts) of leads 1 consisting of the same material with the tab 2 are connected by wires 5, and a dual-in-line type plastic package construction sealed with resin 6 is formed. The wires 5 in the semiconductor device thereof is mainly consisting of aluminum, and nickel of 0.03wt% or more, desirably 0.075wt% or more is contained therein.

7. 发明专利

JP2001044269A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JP2001044269A
公开(公告)日：2001-02-16
申请号：JP2000181320
申请日：2000-06-16
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： KITAMURA WAHEI , NUMAZAKI MASAHITO
IPC分类号： G01R31/26 , H01L21/673 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To surely prevent shift of leads and deformation of the leads by visual inspection of a semiconductor integrated circuit device, in a tray for housing the device. SOLUTION: A pocket 3 for housing a semiconductor integrated circuit unit 2 is provided in the side of the surface 1a of a tray 1 for housing and tweezers holes 4, for taking out the unit 2 from the pocket 3 by tweezers or the like are formed in the surface 1a by a molding integral with the pocket 3 in each side of the four sides of the pocket 3. These holes 4 are formed by projecting protrusions from the side of the surface 1a of the tray 1 toward the side of the rear of the tray 1, and the unit 2 on the surface of the tray 1 is suppressed of its movement by these protrusions.

8. 发明专利

JPH0330455A RESIN SEALED TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0330455A
公开(公告)日：1991-02-08
申请号：JP16396689
申请日：1989-06-28
申请人： HITACHI LTD
发明人： SATO HAJIME , KITAMURA WAHEI , OTSUKA KENICHI
IPC分类号： H01L23/29
摘要： PURPOSE:To improve a semiconductor device of this design in heat dissipating property without changing a package in thickness by a method wherein a heat dissipating body formed of a coiled metal wire, a metal wire subjected to a bending work, or metal meshes is joined to the rear side of the tab of a lead frame as buried in a resin sealing body. CONSTITUTION:A semiconductor chip 4 is fixed to a tab 3 of a lead frame 2, which is sealed up with resin to form a resin sealed type semiconductor device 1, where a heat dissipating body 7 formed of a coiled metal wire, a metal wire subjected to a bending work, or metal meshes is joined to the rear side of the tab 3 of the lead frame 2 opposed to the side where the semiconductor chip 4 is mounted as all buried in a resin sealing body 8 or partially exposed from the resin sealing body 8. For instance, the semiconductor chip 4 is fixed the tab 3 of the lead frame 2, and the chip 4 and a lead section 5 are electrically connected together with a connector wire 6. The heat dissipating body 7 is joined to the side of the tab 3 opposed to the semiconductor chip 4 and buried int eh resin sealing body 8 so as to make its surface partially exposed out of the sealing body.

9. 发明专利

JPH02180061A LEAD FRAME AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02180061A
公开(公告)日：1990-07-12
申请号：JP33505688
申请日：1988-12-29
申请人： HITACHI LTD
发明人： SATO HAJIME , KITAMURA WAHEI , SUZUKI HIROMICHI
IPC分类号： H01L21/60 , H01L23/50
摘要： PURPOSE:To obtain semiconductor devices with extremely numerous pins by constituting lead frames with multileveled leads and insulating films insulating these leads, and connecting them with electrode pads of semiconductor pellets electrically. CONSTITUTION:An insulating film 7 is interposed between the upper-level leads 6a and the lower-level leads 6b, and the upper-level and lower-level leads 6a and 6b are insulated from each other. A plurality of unit frames being constituted every section, in this way, are arranged to compose a lead frame 1. Besides, the electrode pads 11 of a semiconductor pellet 2 are arranged in numerous lines, and these electrode pads 11 are electrically connected with the inner lead section of the lead frame 1. As this makes it possible to increase the number of input/output terminals greatly compared with the conventional technique of the leads 6a and 6b being aligned on the same plane, it becomes possible to obtain semiconductor devices with extremely numerous pins.

10. 发明专利

JPH0219292A FACE MOUNTING TYPE SEMICONDUCTOR PACKAGE ENCLOSURE AND METHOD FOR MANUFACTURING OF SEMICONDUCTOR MEMORY DEVICE 失效
公开(公告)号：JPH0219292A
公开(公告)日：1990-01-23
申请号：JP4199288
申请日：1988-02-26
申请人： HITACHI LTD
发明人： KITAMURA WAHEI , MURAKAMI HAJIME
IPC分类号： B65D85/86 , B65D81/26 , B65D85/38 , H01L21/56 , H01L23/00 , H01L27/10 , H05K3/34
摘要： PURPOSE:To achieve the technical feasibility of mounting semiconductor packages in a highly reliable manner and a high yield rate by providing a resin sealant for covering the semiconductor chip consisting of one electronic element and a part of the main surface thereof and a multiple layer film containing a sheet of metal sheet for isolating the semiconductor chip and the resin sealant from the outside. CONSTITUTION:A magazine 2 is placed in an inner paper case 1, packed with a plurality of face mounting type semiconductor packages 3 and provided at one end thereof with a stopper 4 for preventing the protrusion of the package 3 from the magazine. Silica gel 5 is placed between the wall of the inner case 1 and the side wall of the magazine 2, particularly on the side of an opening of the magazine 2. The reason is a good absorbing power of the silica gel effective in absorbing the external moisture to which the opening side of the magazine is first susceptible, when a lid 6 is covered with the flange 7 thereof folded inwardly of the inner case 1 and raised to take out the package 3. The inner case 1 is placed in a bag 8 and, after degassing, an opening 9 of the bag 8 is heat sealed. The bag 8 is a transparent, conductive bag consisting basically of the polyester having a moisture permeability of not more than 2.0g/m for 24 hours.

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