专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPS5548926A PREPARATION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5548926A
公开(公告)日：1980-04-08
申请号：JP12036578
申请日：1978-10-02
申请人： HITACHI LTD
发明人： TAMURA HIROSHI , MIYAO MASANOBU , SHIRAKI YASUHIRO , NAKASHIMA HISAO , TOKUYAMA KON
IPC分类号： H01L21/268 , H01L21/265 , H01L21/324
摘要： PURPOSE:To prevent the generation of pollution when applying the laser beam and to reduce the strength of the laser required considerably by irradiating the laser beam through a protective film which is substantially transparent against the laser beam to be applied, and annealing the region for ion implantation. CONSTITUTION:The laser beam is applied through a protective film composed of SiO2, Si3N4 and phosphorus glass, and the film is substantially transparent against the laser beam to be applied. An insulating film, or the protective film is attached onto a substrate having the area for ion implantation. If the laser beam is applied through the insulating film, the area for ion implantation covered by the film can be annealed without trouble, thus preventing pollution when applying the laser beam and extremely reducing the strength of the laser required.

2. 发明专利

JPS5261475A PRODUCTION OF SILICON CRYSTAL FILM 失效
公开(公告)号：JPS5261475A
公开(公告)日：1977-05-20
申请号：JP13718875
申请日：1975-11-17
申请人： HITACHI LTD
发明人： SAITOU TADASHI , MINAGAWA SHIGEKAZU , TOKUYAMA KON
IPC分类号： H01L21/205 , C22F1/16 , H01L21/20
摘要： PURPOSE:To form a uniform film of large aprticle sizes by depositing a film containing more than one of C, B, SiCBC, AlC on a substrate and recrsytalizing said film.

3. 发明专利

JPS55127016A MANUFACTURING OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS55127016A
公开(公告)日：1980-10-01
申请号：JP3442579
申请日：1979-03-26
申请人： HITACHI LTD
发明人： TAMURA MASAO , KASHIYUU NOBUYOSHI , MIYAO MASANOBU , OOKURA OSAMU , TOKUYAMA KON , SASAKI YOSHITOMO , ITOU KAZUO , SAITOU MASAYOSHI , MITSUISHI TOMOKUNI
IPC分类号： H01L21/22 , H01L21/225 , H01L21/26
摘要： PURPOSE:To effect the accurate control of impurity atom concentration and profile with simple processes by a method wherein a thin layer containing impurity is formed on the surface of the semiconductor substrate by use of the solution including the impurity to be doped, and the impurity is diffused into the substrate by irradiating the laser beam thereon. CONSTITUTION:When a Si substrate 1 is immersed into solution 4 containing impurity upon the rotation of a disc 3, the solution 4 contacts with the surface of the substrate 1 and adheres thereon. In this occasion, as the substrate 1 is rotated, the solution layer formed on the surface of the substrate 1 becomes very thin and uniform. When the disc 3 is further rotated and the substrate 1 including the thin layer thereon reaches to the predetermined position, the rotation is stopped and then laser beam 5 is irradiated on the substrate 1. After irradiating the laser beam, the disc 3 and the substrate 1 are rotated again, and the above process is repeated successively. By so doing, it becomes possible to effect the accurate control of impurity atom concentration and profile with simple processes.

4. 发明专利

JPS5534416A METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5534416A
公开(公告)日：1980-03-11
申请号：JP10621378
申请日：1978-09-01
申请人： HITACHI LTD
发明人： OOYU SHIZUNORI , MIYAO MASANOBU , KOYANAGI MITSUMASA , HASHIMOTO TETSUKAZU , TOKUYAMA KON
IPC分类号： H01L21/26 , H01L21/265 , H01L21/268 , H01L21/324
摘要： PURPOSE:To form a layer or region having a laser light absorption coefficient on the surface or the like of an ion implantation region thereby to shorten the laser light irradiation time at the time of annealing and prevent any crack of the substrate. CONSTITUTION:An annealing operation due to irradiation of laser light is carried out by forming a layer or region having a high laser absorption coefficient on the surface of the ion implanation region of the substrate and a part except said surface. In order to form said layer or region, there is used a method of irradiating ultraviolet rays the luminous source of which is a Xe lamp to for example, a Si substrate 10, to irradiate CO2 laser light, a method of irradiating CO2 light by increasing the temperature of the substrate 10 by a heater 11, or a method of irradiating CO2 laser light after placing a film 11 having a great absorption coefficient in a wavelength of about 10mum such as SiO2 or phosphorus glass film on the surface of the Si substrate 10.

5. 发明专利

JPS513875A 失效
公开(公告)号：JPS513875A
公开(公告)日：1976-01-13
申请号：JP7434574
申请日：1974-07-01
申请人： HITACHI LTD
发明人： YAGI KUNIHIRO , TOKUYAMA KON , MYAKE KYOSHI
IPC分类号： C30B23/08 , C23C14/32 , H01L21/203 , H01L21/208 , H01L21/265 , H01L21/268

6. 发明专利

JPS57111020A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57111020A
公开(公告)日：1982-07-10
申请号：JP18226581
申请日：1981-11-16
申请人： HITACHI LTD
发明人： OOYU SHIZUNORI , MIYAO MASANOBU , KOYANAGI MITSUMASA , HASHIMOTO TETSUKAZU , TOKUYAMA KON
IPC分类号： H01L21/324 , H01L21/26 , H01L21/265 , H01L21/268
摘要： PURPOSE:To recover the damage of a crystal generated in an ion implantation layer efficiently through the irradiation of laser beams by utilizing a layer or a region having the high absorpition coefficient of the laser beams. CONSTITUTION:Free electrons (or holes) are formed previously in a Si substrate, and a CO2 laser is irradiated. ultraviolet rays using a Xe lamp as a light source are irradiated onto the Si substrate 10, and the CO2 laser is irradiated. The temperature of the Si substrate 10 is elevated by means of a heater 11, and the CO2 laser is irradiated. Or the surface of the Si substrate 10 into which ions are implanted is coated with the film 12 having the large absorption coefficient of beams such as SiO2 or a phosphorus glass film, and the CO2 laser is irradiated. Accordingly, the free electrons (or holes) increase in the substrate, the absorption coefficient of the laser beams is improved, and the efficiency of annealing is ameliorated.

7. 发明专利

JPS5687361A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPS5687361A
公开(公告)日：1981-07-15
申请号：JP16405979
申请日：1979-12-19
申请人： HITACHI LTD
发明人： OKABE TAKAHIRO , TAMURA MASAO , WADA YASUO , TOKUYAMA KON , MINATO OSAMU , OOBA SHINYA , KOZUKA KOUJI , OOKURA OSAMU , TAMURA HIROSHI
IPC分类号： H01L29/80 , H01L21/02 , H01L21/20 , H01L21/268 , H01L21/331 , H01L21/338 , H01L21/822 , H01L21/8238 , H01L27/02 , H01L27/06 , H01L27/092 , H01L27/12 , H01L29/04 , H01L29/73 , H01L29/78 , H01L29/786 , H01L29/812
摘要： PURPOSE:To reduce the parasitic capacities of source and drain of the semiconductor device and to enable a high speed operation by a method wherein the FET is manufactured using a laser anneal epitaxial growth method. CONSTITUTION:An SiO2 film 32 is formed on a P type Si single crystalline substrate 31 providing an opening part, and an amorphous Si layer or a polycrystalline Si layer 35 is formed on it. The whole surface is irradiated with a laser beam applying the Q-switching method to convert the amorphous Si layer or the polycrystalline Si layer into a single crystalline Si film 35. The diffusion treatment is performed with the Si film 35 to form N type regions 33, 34 and electrodes 37, 38 are provided to be used as the source, drain, and a center part electrode 36 is provided to be used as the gate. Accordingly the capacities of the source 33, the drain 34 against the substrate 31 are reduced, and the high frequency characteristic can be improved.

8. 发明专利

JPS5650511A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5650511A
公开(公告)日：1981-05-07
申请号：JP12540179
申请日：1979-10-01
申请人： HITACHI LTD
发明人： MIYAO MASANOBU , TAMURA HIROSHI , TAMURA MASAO , OOKURA OSAMU , KASHIYUU NOBUYOSHI , TOKUYAMA KON
IPC分类号： H01L21/265 , H01L21/268
摘要： PURPOSE:To elevate the efficiency of annealing of a semiconductor device by a method wherein a laser beam is irradiated to a semiconductor substrate being ion implanted through a newly formed thickness of film or another kind of insulating film. CONSTITUTION:A P type substrate 1 is oxidized to form oxidized layers 2 having the 500Angstrom thickness on the both main faces, As ions are implanted through the oxidized film to form an implanted region 4. After an SiO2 film 5 having 700Angstrom thickness is formed on one side main face by the CVD method, a ruby laser beam 6 is irradiated to it to anneal the impurity implanted region 4. Accordingly, because the insulaing films having respectively the most suitable thickness for ion implantation and laser irradiation can be used, respective efficiency is improved. Especially the efficiency of annealing by laser beam becomes maximum when the thickness of the insulating film is lambda/4n, (lambda: wave length of incident beam, n: refractive index of insulating film).

9. 发明专利

JPS5290274A PRODUCTION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5290274A
公开(公告)日：1977-07-29
申请号：JP599376
申请日：1976-01-23
申请人： HITACHI LTD
发明人： KASHIYUU NOBUYOSHI , TAMURA AKIO , TOKUYAMA KON
IPC分类号： H01L29/73 , H01L21/265 , H01L21/331 , H01L29/08 , H01L29/72
摘要： PURPOSE:Noise characteristics are improved by adhering an ion beam blocking film containing an impurity to the required regions on the surface of a semiconductor substrate, implanting ions after removing the ion-implanting regions or making the film thin, diffusing the impurity through heat treatment and also diffusing the impurity from the blocking film.

10. 发明专利

JPS57132326A IMPURITY DIFFUSION 失效
公开(公告)号：JPS57132326A
公开(公告)日：1982-08-16
申请号：JP1701481
申请日：1981-02-09
申请人： HITACHI LTD
发明人： OOYU SHIZUNORI , YAGI KUNIHIRO , KASHIYUU NOBUYOSHI , TAMURA MASAO , TOKUYAMA KON
IPC分类号： H01L21/225 , H01L21/265
摘要： PURPOSE:To prevent the defects or distortion of a substrate in impurity diffusion by a method wherein the first film having high impurity diffusion coefficient is formed on the substrate and after performing ion implantation for the impurities to implant the impurities in the film, the second film having the low diffusion coefficient of the above impurities is formed on the first film for heating and the impurities in the first film are diffused in the substrate. CONSTITUTION:First of all, an SiO2 film 2 is formed on the surface of an N type Si substrate 1 by a thermal oxidation method. Next, Ga ions 3 are implanted in the film 2 for 1X10 ions/cm ion implantation at an energy of 47keV and an Ga ion implantation layer 4 is formed in the film 2. Next, after using photo etching and removing the film 2 formed on a region 5 which is done no Ga diffusion, an Si3N4 film 6 is formed on the whole surface of the substrate 1 by a CVD method. Next, thermal treatment is done for 30min and 1,000min at 1,100 deg.C under dried nitrogen atmosphere to diffuse the Ga implanted in the film 2 to the substrate 1 and Ga diffusion regions 7 are formed.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式