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1. 发明专利

JPH0637365A CONNECTING STRUCTURE FOR SUPERCONDUCTING WIRING 失效
公开(公告)号：JPH0637365A
公开(公告)日：1994-02-10
申请号：JP19188792
申请日：1992-07-20
申请人： HITACHI LTD
发明人： YAMADA KOJI , KOMINAMI SHINYA , TAKAHASHI SACHIKO
IPC分类号： H01L39/24
摘要： PURPOSE:To realize a superconducting connection of an Nb/Nb connection and to reduce a connecting area and a wiring pitch by forming a connecting member of a superconducting wiring of one layer of a lower electrode in the wiring for connecting superconducting devices therebetween on a board. CONSTITUTION:A board 11 is coated with a three-layer film of a lower electrode 12 made of an Nb film, an AlOx layer 13 to become a tunnel barrier layer and an upper electrode 14 made of an Nb film by a sputtering method. Then, after an inductor pattern B having first superconducting wirings A-A' and a connecting part is formed, an insulating film 15 is provided, a connecting part of a first superconducting wiring is dry etched to remove the film 14 and the layer 13, a surface of the electrode 12 is exposed, and a steplike sectional shape is formed at the connecting part of the wirings A-A'. Thereafter, after the connecting part is surface-cleaned, an Nb film 17 is formed on the entire surface by sputtering, and eventually the wiring 17 and a connecting wiring electrode 17' are simultaneously pattern-formed by dry etching.

2. 发明专利

JPH06175352A PHOTOMASK FOR FORMING RESIST PATTERN 失效
公开(公告)号：JPH06175352A
公开(公告)日：1994-06-24
申请号：JP32643292
申请日：1992-12-07
申请人： HITACHI LTD
发明人： YAMADA KOJI , TAKAHASHI SACHIKO , KOMINAMI SHINYA , MITA REEKO
IPC分类号： G03F1/36 , G03F1/70 , H01L21/027 , G03F1/08
摘要： PURPOSE:To obtain the pattern of a superconducting device as designed by providing the corner parts of all patterns with projecting parts or recessed parts, thereby forming the resist patterns having high accuracy and joining these patterns to form the mask for wiring patterns. CONSTITUTION:A resist 12 is formed by spin coating on a substrate 11 and is then prebaked. The composite photomask 13 having the projecting parts formed by superposing correction patterns of, for example, 0.28mum square on the corner parts of mask patterns consisting of, for example, 1.5mum square in joining area is subjected to pattern transfer by UV light 14 (Fig. (a)). The resist 12 in the unexposed region after the pattern transfer and the resist 15 of the exposed region are shown (Fig. (b)). The resists are then developed by using a prescribed alkaline developer and is spin-dried after washing to form the resist pattern 16 consisting of 1.5mum square joining area. As a result, the corner parts of the resist patterns are rectangular in sectional shape as shown within the round mark of the dotted line of Fig. (c). The photomask having the high accuracy is thus obtd.

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