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1. 发明专利

JP2001230419A METHOD AND DEVICE FOR MANUFACTURING LIQUID CRYSTAL DISPLAY, AND LIQUID CRYSTAL DISPLAY 失效
公开(公告)号：JP2001230419A
公开(公告)日：2001-08-24
申请号：JP2000041379
申请日：2000-02-15
申请人： HITACHI LTD
发明人： SHINAGAWA TAKAAKI
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/31 , H01L21/316 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To increase a product life by improving the reliability of an active matrix type liquid crystal display. SOLUTION: The method for manufacturing the gate insulation film of a thin-film transistor for driving pixels or peripheral circuit consists of the alternately repetition of the formation of the insulation film and the succeeding surface treatment of the insulation film by an oxidizing gas. As a result, the impurity of the gate insulation film of the thin-film transistor for driving the pixels or peripheral circuit improves and the gate insulation film becomes dense, thus improving the reliability of the thin-film transistor and hence improving the reliability of the liquid crystal display and increasing a product life.

2. 发明专利

JPH1126771A THINFILM TRANSISTOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH1126771A
公开(公告)日：1999-01-29
申请号：JP17677397
申请日：1997-07-02
申请人： HITACHI LTD
发明人： SHINAGAWA TAKAAKI , KAWACHI GENSHIROU
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To decrease the off-current of a thinfilm transistor, by providing an opening part at least at a part on a region in contact with an active layer in a semiconductor layer to grow to source/drain regions, etching the part of the semiconductor layer to grow to the source/drain regions thinner than the film thickness, and obtaining the thin film. SOLUTION: After a resist 6 is applied to polycrystalline silicon 5, the resist 6 is patterned in the island shape. At this time, an opening part 7 in the resist on the region in contact with an active layer is provided at the following process. The polycrystalline silicon 5 is etched by dry etching using etching gas CF4 and O2 . At the opening part 7, the etching rate becomes later by about 30% than the surrounding part of the island. When the etching is finished, a semiconductor layer becomes thin film to 5-10 nm excluding the overetching amount by the request for the process, and a remaining thinfilm region 8 is formed. The resistance of the opening part 7 is increased by the thinfilm formation. The OFF current of a thinfilm transistor can be decreased without increasing the manufacturing processes at all.

3. 发明专利

JPH06326314A THIN FILM TRANSISTOR AND ITS MANUFACTURE 失效
公开(公告)号：JPH06326314A
公开(公告)日：1994-11-25
申请号：JP13233893
申请日：1993-05-12
申请人： HITACHI LTD
发明人： TANAKA TAKESHI , KAWACHI GENSHIROU , ONO KIKUO , OGAWA KAZUHIRO , SHINAGAWA TAKAAKI , ASUMA HIROAKI
IPC分类号： H01L29/78 , B21B1/08 , B21B45/02 , H01L21/336 , H01L29/786 , H01L29/784
摘要： PURPOSE:To increase the ON-state current by making a route for drain current to be low resistance. CONSTITUTION:A gate electrode 10 is formed on a glass substrate 50, and a gate insulation film 20 and an amorphous Si layer 30 are formed on the electrode 10. A source electrode 15S and a drain electrode 15D are formed on the layer 30, and a protective insulating film 23 is formed to protect all of them. Furthermore, such a construction is characterized by that an n-type doped region 32 where phosphrous is introduced is formed on at least one pair of ends in the layer 30 that face each other. The region 32 functions in a manner that a channel inversion layer 30a which is formed adjacent to the boundary face on the film 20 of the layer 30 and a source/drain electrode 15 will mutually have an ohmic contact.

4. 发明专利

JP2001125135A LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF PRODUCING THE SAME 失效
公开(公告)号：JP2001125135A
公开(公告)日：2001-05-11
申请号：JP30496799
申请日：1999-10-27
申请人： HITACHI LTD
发明人： KAWACHI GENSHIRO , SHINAGAWA TAKAAKI , SATO TAKESHI , TOYODA YOSHIAKI
IPC分类号： H01L29/786 , G02F1/1333 , G02F1/136 , G02F1/1365 , G02F1/1368
摘要： PROBLEM TO BE SOLVED: To obtain a TFT with high reliability at a low cost in which no parasitic channel is present on the side face of a semiconductor pattern of a TFT in a TFT-LCD with a built-in driving circuit to be formed on a glass substrate. SOLUTION: Elements are separated by using low temperature plasma oxidation to form such a structure that a gate insulating film is not in contact with the side face of the semiconductor pattern of a TFT so as to prevent a parasitic channel on the side face of the semiconductor pattern. By this method, since the side face of the semiconductor pattern is not in contact with the gate insulating film, no parasitic channel is formed on the side face. Moreover, no step is formed in the end of the semiconductor pattern so that a dense and high- quality insulating film which is inferior in the step coverage can be used, and this improves the reliability.

5. 发明专利

JPH1197351A LASER ANNEALING METHOD 失效
公开(公告)号：JPH1197351A
公开(公告)日：1999-04-09
申请号：JP25643297
申请日：1997-09-22
申请人： HITACHI LTD
发明人： SHINAGAWA TAKAAKI , KAWACHI GENSHIROU
IPC分类号： G02F1/13 , H01L21/20 , H01L21/268
摘要： PROBLEM TO BE SOLVED: To cause the crystal growth of a semiconductor in a direction parallel to a base substrate, by irradiating a laser beam composed of high energy parts and smaller parts alternately arranged in the one-dimensional beam energy profile. SOLUTION: A laser beam l having e.g. a size of 150 mm×0.3 mm where its energy density periodically vary at pitches of e.g. 1 μfrom 396-308 mJ/cm in the beam profile on the minor axis is irradiated on an amorphous Si 2 to cause a temp. difference between irradiated regions of the Si molten at the energy densities of 396 and 308 mJ/cm . This temp. difference causes a temp. gradient parallel to the substrate to grow a crystal from the low-temp. region irradiated at 308 mJ/cm to the high-temp. region irradiated at 396 mJ/cm , parallel to the substrate.

6. 发明专利

JPH09116158A LIGHT WEIGHT SUBSTRATE THIN FILM SEMICONDUCTOR DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH09116158A
公开(公告)日：1997-05-02
申请号：JP26866895
申请日：1995-10-17
申请人： HITACHI LTD
发明人： MIMURA AKIO , SHINAGAWA TAKAAKI
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/02 , H01L21/20 , H01L21/268 , H01L21/336 , H01L27/12 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a light weight substrate thin film semiconductor device and a liquid crystal display device which facilitate the size reduction and weight reduction of a display apparatus. SOLUTION: In order to realize the size reduction, the weight reduction and the improvement of an impact strength, a plastic substrate 1 or flexible thin glass substrate with a thickness not larger than 0.5 mm is employed as a light weight substrate. Further, in order to form a high performance p-type Si TFT on this non-heat-resistant substrate, a laser crystallization method is used. A heat radiation means 2 is provided on the substrate so as to have the heat of the laser crystallization not transmitted directly to the substrate and, moreover, the intensity of the emitted laser beam is limited so as to avoid the excessive heat application.

7. 发明专利

JPH0567782A THIN FILM TRANSISTOR AND ITS MANUFACTURE 失效
公开(公告)号：JPH0567782A
公开(公告)日：1993-03-19
申请号：JP22784891
申请日：1991-09-09
申请人： HITACHI LTD
发明人： SHINAGAWA TAKAAKI , TANAKA TAKESHI , ONO KIKUO , OGAWA KAZUHIRO
IPC分类号： H01L21/20 , H01L21/336 , H01L27/12 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/78 , H01L29/786
摘要： PURPOSE:To realize both improvement and uniformity of performance of a thin crystalline film transistor manufactured by radiation of energy beam to a channel region by enlarging a composition rate of silicon of silicon nitride of a gate insulating film in a reverse-stagger type thin film transistor. CONSTITUTION:An Al gate electrode 2 and an Al2O3 gate insulating film 3 through anode formation thereof are formed on a glass substrate 1. Silicon nitride whose composition rate of silicon atom and nitrogen atom is 0.75 or more and 0.90 or less or amount rate of hydrogen atom combined to each of silicon atom and nitrogen atom is 0.50 or more and 6 or less is deposited as a gate insulating film 4 of the second layer. Then, an amorphous silicon 5 is deposited and crystallized by radiation of energy beam 6.

8. 发明专利

JP2001077047A THIN-FILM SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2001077047A
公开(公告)日：2001-03-23
申请号：JP24833199
申请日：1999-09-02
申请人： HITACHI LTD
发明人： SHINAGAWA TAKAAKI , KAWACHI GENSHIROU
IPC分类号： H01L29/78 , H01L21/28 , H01L21/336 , H01L27/148 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To improve the performance of a thin-film transistor at a lower manufacturing cost by, at formation of a metal wiring, selectively replacing at least a part of the wiring of semiconductor which is formed in advance with a metal through a electrochemical replacement reaction. SOLUTION: An impurity is injected into the region of an active layer 4 which does not overlap a gate electrode 6, and the impurity injected under heat is activated to form a source region 7 and a drain region 8. A gate insulating film over the region is removed by etching into offset form with a width, for example, 1 μm from the end of the gate electrode left alone. A substrate is submerged in a mixed water solution containing copper nitrate and ammonium fluoride. Since the ionization tendency of silicon is higher than copper, the silicon atom on the surface is replaced with copper atom so that the silicon atom as deep as, from exposed source/drain surface, 15 nm, for example, is replaced with copper atom, with a copper thin film 9 selectively deposited on the surface of source/drain region. Then the substrate is annealed to bake the copper thin film 9.

9. 发明专利

JP2000081642A LIQUID CRYSTAL DISPLAY DEVICE AND ITS PRODUCTION 失效
公开(公告)号：JP2000081642A
公开(公告)日：2000-03-21
申请号：JP19121099
申请日：1999-07-06
申请人： HITACHI LTD
发明人： KAWACHI GENSHIRO , SHINAGAWA TAKAAKI , MIMURA AKIO
IPC分类号： G09F9/30 , G02F1/136 , G02F1/1365 , G02F1/1368 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To enhance the reliability of an element by surface smoothening and to enhance performance such as transfer rate by the increase of grain diameter by fusing the grains of a polycrystalline semiconductor by irradiation with high energy laser beams. SOLUTION: A silicon dioxide film is formed on an alkali-free glass substrate in 200 nm thickness. A hydrogenated amorphous silicon film of 35 nm thickness is then formed by plasma CVD using monosilane and hydrogen as gaseous starting materials. Hydrogen contained in the hydrogenated amorphous silicon film is released by irradiation with 30 shots of 200 mJ/cm2 XeCl excimer laser beams and the dehydrogenated amorphous silicon is crystallized by irradiation with 300 mJ/cm2 XeCl excimer laser beams to form a polycrystalline silicon film. The grains of the polycrystalline silicon film having about 60 nm average grain diameter are mutually fused by irradiation with 380 mJ/cm2 XeCl excimer laser beams 4 to obtain the objective polycrystalline silicon film 6 having about 600 nm average grain diameter.

10. 发明专利

JPH1020337A PRODUCTION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH1020337A
公开(公告)日：1998-01-23
申请号：JP17205896
申请日：1996-07-02
申请人： HITACHI LTD
发明人： KAWACHI GENSHIROU , SHINAGAWA TAKAAKI , SUGA HIROSHI , NAGAI SHOICHI , MIMURA AKIO
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To produce a semiconductor element having high reliability by continuously executing a stage for irradiation with a laser beam and a stage for forming a protective insulating film while maintaining vacuum. SOLUTION: A ground surface insulating film is formed on the main surface of a glass substrate. In succession, an amorphous silicon (a-Si) film is formed within the same vacuum device and is irradiated with the pulse laser beams LASER to convert the a-Si film to a polycrystalline silicon(poly-Si) film 301. A gate insulating film and gate electrode are formed and are patterned to prescribed shapes. The poly-Si film 301 is irradiated with the ion beam IB contg. phosphorus with these patterns as a mask, by which poly-Si layers 31 of an N type are formed in a part of the poly-Sr film. The film is again irradiated with the pulse laser beams. In succession, the protective insulating film 21 covering the entire part of the element is formed within the same vacuum device.

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