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1. 发明专利

JPS573212A FORMING METHOD FOR MULTILAYER FILM FOR ELECTRONIC CIRCUIT 失效
公开(公告)号：JPS573212A
公开(公告)日：1982-01-08
申请号：JP7563280
申请日：1980-06-06
申请人： HITACHI LTD
发明人： HANAZONO MASANOBU , AKIYAMA HIROSHI , HARA SHINICHI , SAKIMURA MITSUO , KAWAKAMI HIROJI
IPC分类号： G11B5/31 , G11B5/127 , G11B5/17 , G11B5/12
摘要： PURPOSE:To obtain a high-precision multilayered film free from a shift in position by forming a mask with a smaller window than the opening of an intermediate layer on a substrate through the intermediate layer, and then by forming the multilayered film by alternating vapor deposition and ion plating. CONSTITUTION:For the formation of a multilayered film consisting of alternately stacked conductor films 13 and insulating films 14, for example, polyimide resin 11 is applied over a substrate 1 to about 5mum and after it is cured, and about 0.3mum thickness film of Mo12 is vapor-deposited. The Mo film 12 is photoetched to form an accurate pattern. In an atmosphere of O2, sputtering is carried out to cut into the resin film 11. Under high vacuum, a conductor 13 is vapor-deposited from above and on it, and insulating film 14 is stacked by ion plating. This operation is repeated to obtain a multilayered film. Thus, the high-precision multilayered film free from a shift in position is obtained.

2. 发明专利

JPS56156915A FORMATION OF MULTILAYER FILM FOR ELECTRONIC CIRCUIT 失效
公开(公告)号：JPS56156915A
公开(公告)日：1981-12-03
申请号：JP5872980
申请日：1980-05-06
申请人： HITACHI LTD
发明人： HANAZONO MASANOBU , AKIYAMA HIROSHI , HARA SHINICHI , SAKIMURA MITSUO
IPC分类号： G11B5/31
摘要： PURPOSE:To avoid the occurrence of a faulty area such as a step break at the stepped part of a multilayer film, by forming a mask having a window of a prescribed form on a substrate, then forming the 1st film after stacking the 1st film material through the mask and then stacking the 2nd film after removing the mask. CONSTITUTION:For forming a multilayer film for an electronic circuit such as particularly a magnetic film, conductor film and insulated film of a thin-film magnetic head, the 3rd film 8 is formed on e.g. a substrate 1. Then a photoresist covers the 4th film 9 over the film 8 to obtain a pattern having an eaves. Then the 1st films 10 and 10' are vapor-deposited in vacuum from the upper side of the substrate 1 with the film 9 used as a mask. The film 9 is then etched with removal of the film 8 to leave the film 10'. Thus the edge part 10'' of the film 10' has a smooth surface with a gentle inclination. In the same way, the mask films 8 and 9 are formed on the part 10'' and the 2nd film 11 is vapor-deposited. In such way, the film 11 can have nearly a same thickness over the part 10'' and with no step break at all.

3. 发明专利

JPS5756931A Manufacture of thin film element 失效
标题翻译：薄膜元件的制造
公开(公告)号：JPS5756931A
公开(公告)日：1982-04-05
申请号：JP13067280
申请日：1980-09-22
申请人： Hitachi Ltd
发明人： HARA SHINICHI , HANAZONO MASANOBU , AKIYAMA HIROSHI , SAKIMURA MITSUO
IPC分类号： H01L21/302 , H01L21/306 , H01L21/3065
CPC分类号： H01L21/306
摘要： PURPOSE:To preferably from the upper layer of upper and lower layers of two- layer life-off material even if the upper layer is formed thickly by combining the upper and lower layers capable of being selectively etched and sputter etching the upper layer as resin. CONSTITUTION:An Mo 2 is grown by a sputtering method on a substrate 1. A polyimide resin 3 is coated on the Mo, and is then heat treated. When aluminum mask 4 is formed and the resin 3 is sputter etched with O2, an overhang becomes small, and a vertical wall is formed. Then, the Mo 2 is chemically etched with etchant, and an overhang of the resin 3 is formed. After an SiO2 5 is sputtered, the Mo 2 is etched, and the SiO2 5 thereon is removed with the life-off material. According to this configuration, the thickness of the life-off material can be, though formed thickly, patterned precisely, thereby obtaining a thin film pattern 5 of preferable shape.
摘要翻译：目的：即使通过组合能够被选择性蚀刻的上层和下层并且将上层作为树脂进行溅射蚀刻来形成厚层，优选地从上层和下层的两层寿命材料的上层开始。构成：通过溅射法在基板1上生长Mo 2。将聚酰亚胺树脂3涂覆在Mo上，然后进行热处理。当形成铝掩模4并且用O 2溅射蚀刻树脂3时，突出部变小，形成垂直壁。然后，用蚀刻剂对Mo 2进行化学蚀刻，形成树脂3的突出部。在溅射SiO 2 5之后，蚀刻Mo 2，并且用剩余材料去除其上的SiO 2。根据该结构，虽然能够精细地形成厚度图案，但是可以将精细材料的厚度尽可能精细地构图，从而获得优选形状的薄膜图案5。

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