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    • 2. 发明专利
    • SURFACE ACOUSTIC WAVE RESONATOR AND RESONATOR TYPE FILTER
    • JPH1022765A
    • 1998-01-23
    • JP17769196
    • 1996-07-08
    • HITACHI LTD
    • WATANABE KAZUSHIHOSAKA NORIOONUKI HIDEO
    • H03H9/145H03H9/25
    • PROBLEM TO BE SOLVED: To suppress spuriousness by the difference of surface wave acoustic velocity by forming a dielectric film comprising a specified material and a specified film thickness at the non-crossing opening part of comb-line electrodes. SOLUTION: The comb-line electrodes 3 of the film thickness 100nm by the sputtering of Al-Ti alloy are formed for 300 lines by a pair number on a piezoelectric substrate 1 composed of LiNbO3 or the like and this SAW resonator is constituted. Reflectors 5 are formed on both sides of the comb-line electrodes 3. The part of a bus bar 4 for electrically connecting the comb-line electrodes 3 and a bonding pad 2 for wiring is thickened to 600nm by pure Al, the reliability of wire bonding is improved and the resistance portion of an electrode pattern is lowered. The opening length of a crossing part where the comb-line electrodes 3 of the SAW resonator are crossed with each other is 60μm and the non-crossing opening part where they are not crossed is generated for 5μm. The dielectric film 6 of the film thickness 700nm by the sputtering of silicon dioxide is formed at the part over the non-crossing opening part and the bus bar 4. The surface wave acoustic velocity of the non-crossing part is matched with the one of the crossing part.
    • 6. 发明专利
    • SURFACE ACOUSTIC WAVE DEVICE AND MANUFACTURE THEREOF
    • JPH03278605A
    • 1991-12-10
    • JP7685890
    • 1990-03-28
    • HITACHI LTD
    • HOSAKA NORIOWATANABE KAZUSHIONUKI HIDEOYUHARA AKITSUNA
    • H03H3/08H03H9/145
    • PURPOSE:To reduce dispersion in the product characteristic even when the frequency is high and the size of electrode of the surface acoustic wave element is small by providing an electrode finger separate pattern made of an insulation film between electrode fingers of interdigital electrodes. CONSTITUTION:Aluminum thin film formed by the sputtering method is employed for input output interdigital electrodes 2, 3 and an inter-electrode finger pattern 4 of each interdigital electrode is made of a silicon oxide thin film by using the sputtering method. In this case, the film thickness of the interdigital electrodes 2, 3 and the film thickness of the inter-electrode finger pattern 4 are formed the same, Thus, a difference from an acoustic impedance resulting from the difference from a mass addition effect depending on the electrode finger is reduced and ruggedness of the surface in terms of geographical structure is relaxed. Thus, the perturbation or reflection of a surface acoustic wave in the electrode of the high frequency surface acoustic wave device is prevented and the performance of the device is improved by ripple reduction or the like.
    • 7. 发明专利
    • MULTI-ELECTRODE TYPE SURFACE ACOUSTIC WAVE DEVICE
    • JPH03205907A
    • 1991-09-09
    • JP64590
    • 1990-01-08
    • HITACHI LTD
    • WATANABE KAZUSHIHOSAKA NORIOYUHARA AKIAMIONUKI HIDEOYAMADA JUN
    • H03H9/25H03H9/64
    • PURPOSE:To obtain a satisfactory characteristic being excellent in an out-band suppression degree by providing the device with a grounding electrode pattern being formed separately in a closing mode between each input electrode and each output electrode. CONSTITUTION:On a piezoelectric substrate 1, an input electrode 2 and an output electrode 3 are placed alternately, and the input electrode 2 and the output electrode 3 are connected to an input electrode connecting pad 4 and an output electrode connecting pad 5, respectively, and connected to an input stem lead pin 6 and an output stem lead pin 7 by a wire 8, respectively. Also, in a closing mode between each input electrode 2 and each output electrode 3, a grounding common electrode pattern 12 is formed separately from them, and it is grounded to the metallic stem surface 11. In such a way, a mutual induction action by a leakage magnetic field between the input and the output electrodes, and an induction action by the capacity coupling are reduced, therefore, the influence of a direct wave drops, and the out-band suppression degree of a frequency characteristic is improved.
    • 10. 发明专利
    • GRATING COUPLER
    • JPH01263603A
    • 1989-10-20
    • JP9133988
    • 1988-04-15
    • HITACHI LTD
    • YOSHIDA TAKAHIKOONUKI HIDEOKISHIMOTO SEIJI
    • G02B6/122G02B6/12G11B7/135
    • PURPOSE:To provide the high-performance grating coupler for a waveguide type optical device by providing a 1st grating structure part which radiates the luminous flux in a light guide into a dielectric film and the 2nd grating structure part which emits the luminous flux in the dielectric film into an external space. CONSTITUTION:The dielectric film 3 having the refractive index smaller than the refractive index of the light guide 2 is laminated on the surface of the Ti-diffused light guide 2 formed on an LiNbO3 substrate 1. The luminous flux 6 guided in the light guide 2 is emitted into the dielectric film 3 at an exit angle theta by the 1st grating structure 4 to provide the luminous flux 7 which is further emitted by the 2nd grating structure 5 into the external space of the dielectric film 3 at an exit angle psi to provide the luminous flux 8. The pitch A1 of the grating structure 4 is then taken large and the accuracy at the time of production of the grating structures is improved; therefore, the grating coupler having the higher performance is obtd.