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1. 发明专利

JP2013012969A Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路设备
公开(公告)号：JP2013012969A
公开(公告)日：2013-01-17
申请号：JP2011145121
申请日：2011-06-30
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： OWA MISA , ONO TAKEKAZU , SUGANO YUSUKE , OKADA YUKI
IPC分类号： H03K3/354 , H01L21/822 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor circuit device that detects a random variation of a transistor mounted in a semiconductor circuit by removing fluctuations in wiring resistance and wiring capacitance changing with switching of inverters constituting a ring oscillator circuit from frequency fluctuations obtained from an output signal of the ring oscillator circuit.SOLUTION: The semiconductor circuit device comprises: an oscillation circuit comprising a series connection of a plurality of circuit elements for inverting a logical level of an input signal; a signal processing section for counting an output frequency of the oscillation circuit; a plurality of transistors with comparative characteristic variations connected in parallel between a power terminal for applying a supply voltage to one circuit element and a ground terminal; and a selection control section controlled by a timing signal to select every one of the plurality of transistors in order.
摘要翻译：解决的问题：提供一种半导体电路器件，其通过从构成环形振荡器电路的反相器的切换中除去布线电阻的波动和布线电容的波动来检测安装在半导体电路中的随机变化，从获得的频率波动从环形振荡器电路的输出信号。解决方案：半导体电路装置包括：振荡电路，包括用于反转输入信号的逻辑电平的多个电路元件的串联连接; 信号处理部分，用于对所述振荡电路的输出频率进行计数; 具有比较特性变化的多个晶体管并联连接在用于向一个电路元件施加电源电压的电源端子和接地端子之间; 以及由定时信号控制的选择控制部分，以依次选择多个晶体管中的每一个。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2009077190A Radio communication network system and positioning system using the same 审中-公开
标题翻译：无线电通信网络系统和使用该无线电通信系统的定位系统
公开(公告)号：JP2009077190A
公开(公告)日：2009-04-09
申请号：JP2007244647
申请日：2007-09-21
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ONO TAKEKAZU , FUJIWARA RYOSUKE , NAKAGAWA SHIGEO , MIYAZAKI SUKEYUKI
IPC分类号： H04W52/02 , G01S5/06 , H04W4/04 , H04W64/00 , H04W76/02 , H04W88/06
CPC分类号： Y02D70/00
摘要： PROBLEM TO BE SOLVED: To reduce power consumption of an entire network while satisfying communication performance needed for a network system. SOLUTION: In the network system having: a transmitter which performs transmission by both of a coherent system and a non-coherent system; and a receiver performing switching between the coherent system and the non-coherent system, receiving systems of the receiver are switched according to detected communication quality. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了在满足网络系统所需的通信性能的同时降低整个网络的功耗。解决方案：在具有：通过相干系统和非相干系统进行传输的发射机的网络系统中; 以及在相干系统和非相干系统之间执行切换的接收机，根据检测到的通信质量来切换接收机的接收系统。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2012209420A Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路设备
公开(公告)号：JP2012209420A
公开(公告)日：2012-10-25
申请号：JP2011073878
申请日：2011-03-30
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ONO TAKEKAZU , SUGANO YUSUKE
IPC分类号： H01L21/822 , H01L27/04 , H03K19/00
摘要： PROBLEM TO BE SOLVED: To provide a circuit for detecting temporarily fluctuating variation which in an integrated circuit.SOLUTION: A detection circuit 100, an arithmetic circuit 101, and a variation/voltage conversion circuit 113 are provided in an integrated circuit. In the detection circuit 100, characteristic variation of the integrated circuit is detected as an oscillation frequency of an output signal of the detection circuit 100. In the arithmetic circuit 101, variation information detected for every time interval regulated by a timer 106 is stored in a register 111, statistical processing is performed by a statistic arithmetic circuit 112, and the temporarily fluctuating characteristic variation of the integrated circuit is detected. The variation/voltage conversion circuit 113 further converts the characteristic variation into voltage information corresponding to the detected characteristic variation.
摘要翻译：要解决的问题：提供一种用于检测集成电路中的暂时波动变化的电路。解决方案：集成电路中提供检测电路100，运算电路101和变化/电压转换电路113。在检测电路100中，集成电路的特性变化被检测为检测电路100的输出信号的振荡频率。在运算电路101中，将由定时器106调节的每个时间间隔检测到的变化信息存储在寄存器111，统计处理由统计运算电路112执行，并且检测到集成电路的暂时波动特性变化。变化/电压转换电路113进一步将特征变化转换成与检测到的特性变化相对应的电压信息。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2003324158A Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路设备
公开(公告)号：JP2003324158A
公开(公告)日：2003-11-14
申请号：JP2002131100
申请日：2002-05-07
申请人： Hitachi Ltd , Hitachi Ulsi Systems Co Ltd , 株式会社日立製作所 , 株式会社日立超エル・エス・アイ・システムズ
发明人： MIYAZAKI SUKEYUKI , SUGANO YUSUKE , ONO TAKEKAZU , SHINPO TOSHINOBU , YASU YOSHIHIKO , YANAGISAWA KAZUMASA , KURAISHI TAKASHI
IPC分类号： H01L27/04 , H01L21/822 , H01L27/092 , H03K19/00 , H03K19/017 , H03K19/094
CPC分类号： H03K19/01707 , H01L27/0928 , H03K19/0016 , H03K2217/0018
摘要： PROBLEM TO BE SOLVED: To obtain a substrate bias control system capable of designing substrate control independently from the design of a functional module.
SOLUTION: The semiconductor integrated circuit device is provided with a region, controlled by substrate bias control independently from the outside of the same, and a switch for controlling a substrate bias supply at the periphery of the region. Further, the semiconductor integrated circuit device is provided with three kinds of switches for switching substrate biases in accordance with a standby mode, normal operation mode and high-speed operation mode.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：获得能够独立于功能模块的设计设计衬底控制的衬底偏置控制系统。解决方案：半导体集成电路器件设置有独立于其外部的由衬底偏置控制控制的区域，以及用于控制在该区域的外围处的衬底偏置电源的开关。此外，半导体集成电路器件具有根据待机模式，正常操作模式和高速操作模式来切换衬底偏压的三种开关。版权所有（C）2004，JPO

5. 发明专利

JP2012156763A Transmission circuit 有权
标题翻译：传输电路
公开(公告)号：JP2012156763A
公开(公告)日：2012-08-16
申请号：JP2011013795
申请日：2011-01-26
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： KURAHASHI HIROAKI , HOKARI TOMOFUMI , MUTO TAKASHI , ONO TAKEKAZU , YAMASHITA HIROKI
IPC分类号： H03K5/125 , H03K19/0175
CPC分类号： H03K19/018514
摘要： PROBLEM TO BE SOLVED: To provide a transmission circuit that can solve an imbalance in emphasis between high and low output level sides with two advantages of correction circuit elimination and element circuit occupation area reduction over existing transmission circuits.SOLUTION: In the transmission circuit, a driver circuit 17 has MOS transistors M3p, M3n for bias voltage application cascode-connected to MOS transistors M1p, M1n for differential signal input controlled by a voltage value of a transmission data signal, and controlled by a voltage value of a bias voltage to conduct a driving current, and driver circuits 16, 18 have MOS transistors M3p, M3n for bias voltage application cascode-connected to MOS transistors M1p, M1n for differential signal input controlled by a voltage value of a delayed signal of the transmission data signal and connected to load sections, and controlled by a voltage value of a bias voltage to conduct a driving current.
摘要翻译：要解决的问题：提供一种可以解决高输出电平侧和低输出电平侧之间的不平衡的发送电路，其具有校正电路消除和元件电路占用面积减少在现有传输电路上的两个优点。解决方案：在传输电路中，驱动器电路17具有MOS晶体管M3p，M3n，用于与用于通过传输数据信号的电压值控制的差分信号输入的MOS晶体管M1p，M1n共源共栅放电的偏压施加，并控制通过施加驱动电流的偏置电压的电压值，并且驱动电路16,18具有MOS晶体管M3p，M3n，用于与MOS晶体管M1p，M1n连接的偏置电压施加，用于由电压值为传输数据信号的延迟信号并连接到负载部分，并由偏置电压的电压值控制以传导驱动电流。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2005130624A Generator and power generation method 审中-公开
标题翻译：发电机和发电方法
公开(公告)号：JP2005130624A
公开(公告)日：2005-05-19
申请号：JP2003364043
申请日：2003-10-24
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： OKUBO MICHIO , MIYAZAKI SUKEYUKI , TANAKA HIDETOSHI , ONO TAKEKAZU
IPC分类号： F03G7/08 , H01L41/04 , H01L41/113 , H02N2/00 , H02P9/00
CPC分类号： H02N2/181 , H01L41/042 , H01L41/1136 , H02N2/186
摘要： PROBLEM TO BE SOLVED: To provide an oscillatory generator which can enlarge generated voltage even if vibration is small and can raise power generation efficiency. SOLUTION: This oscillatory generator, which is equipped with a mechanism for converting vibrational energy into electric energy, possesses a switch to determine whether to output power or not. The control of the above switch is materialized by performing periodic control for switching the period to output power and the period not to output power into each other, by the cycle not less than two times and not more than one hundred times the cycle of the vibration. According to this invention, it is possible to raise the efficiency of the generator, and an electronic apparatus, which does not need external power supply and does not require labor of battery exchange, either can be obtained. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种振荡发生器，其即使振动小也能够扩大发电电压，能够提高发电效率。
解决方案：该振荡发生器配备有将振动能转换为电能的机构，具有确定是否输出功率的开关。上述开关的控制通过执行周期性控制来实现，该周期控制用于将周期切换到输出功率和不输出功率的周期彼此不小于振动周期的两倍且不超过一百倍的周期。根据本发明，可以提高发电机的效率，并且可以获得不需要外部电源并且不需要电力交换的劳动的电子设备。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2003142598A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 审中-公开
公开(公告)号：JP2003142598A
公开(公告)日：2003-05-16
申请号：JP2001336208
申请日：2001-11-01
申请人： HITACHI LTD
发明人： ONO TAKEKAZU , MIYAZAKI SUKEYUKI , ISHIBASHI KOICHIRO
IPC分类号： H01L21/822 , G11C11/40 , H01L21/8238 , H01L27/04 , H01L27/092 , H03K17/30 , H03K19/003
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device having a mechanism to compensate even dispersion in not only a circuit operation speed but also a leak current. SOLUTION: The semiconductor integrated circuit device is provided with a main circuit composed of a CMOS; a delay monitor circuit 11 simulating the critical pass of the main circuit and monitoring the critical pass of the main circuit which is composed of the CMOS in a similar manner; a PN balance compensating circuit 13 to detect a difference in a threshold voltage between a PMOS transistor and an NMOS transistor; and a well bias generating circuit 25 receiving the output of the delay monitor circuit 11 and the PN balance compensating circuit 15 and compensating the operation speed of the delay monitor circuit 11 to a desired speed and imposing a well bias to decrease a difference in the threshold voltage between the PMOS transistor and the NMOS transistor on the delay monitor circuit 11 and the main circuit.

8. 发明专利

JP2001339045A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JP2001339045A
公开(公告)日：2001-12-07
申请号：JP2000159543
申请日：2000-05-25
申请人： HITACHI LTD
发明人： MIYAZAKI SUKEYUKI , ONO TAKEKAZU , ISHIBASHI KOICHIRO
IPC分类号： H01L27/04 , G11C5/14 , H01L21/822
摘要： PROBLEM TO BE SOLVED: To realize rapidity in operation especially at a low voltage by realizing rapidity of an operation velocity of a CMOS circuit and at the same time enabling low consumption power in a semiconductor integrated circuit device which is constituted of a CMOS circuit. SOLUTION: The device has a main circuit constituted of a CMOS circuit, a change-over circuit, a substrate control circuit and a switch circuit, and switches a substrate bias of a MOS transistor constituting a main circuit to the state of application to a usual power supply voltage and a ground voltage, and the state of application to a forward bias in accordance with a switching signal of a switching circuit. A switching circuit outputs a switching signal on detecting decline of a power supply voltage, etc. As a result, it is possible to provide a CMOS circuit and a CMOS-LSI chip constituted of it, and a semiconductor integrated circuit device which realize low consumption power by cutting leakage current during standby in a high voltage region and realizes improvement of operation velocity in a low voltage region, by enlarging an operational voltage range of a CMOS circuit in a semiconductor integrated circuit device constituted of a CMOS circuit.

9. 发明专利

JP2007200054A Terminal 审中-公开
标题翻译：终奌站
公开(公告)号：JP2007200054A
公开(公告)日：2007-08-09
申请号：JP2006018363
申请日：2006-01-27
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ONO TAKEKAZU , NAKAGAWA SHIGEO , MIYAZAKI SUKEYUKI
IPC分类号： G06F1/18
CPC分类号： G06F1/26
摘要： PROBLEM TO BE SOLVED: To switch source voltage of a processing part of a terminal and its supply range. SOLUTION: The terminal has a connector for connecting a power board which supplies source voltage and a plurality of processing parts for operating with the source voltage from the power board. By the power board having circuit configurations which are different from one another being connected to the connector, the processing part to which power is supplied and a level of source voltage to be supplied are switched. COPYRIGHT: (C)2007,JPO&INPIT

10. 发明专利

JP2000339047A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JP2000339047A
公开(公告)日：2000-12-08
申请号：JP14766599
申请日：1999-05-27
申请人： HITACHI LTD
发明人： MIYAZAKI SUKEYUKI , MIZUNO HIROYUKI , ONO TAKEKAZU , ISHIBASHI KOICHIRO
IPC分类号： H01L27/04 , G05F3/24 , H01L21/822 , H03K19/094
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device such as a microprocessor satisfactory in high speed operation, low power consumption and reliability by preventing the occurrence of malfunction in a CMOS circuit including a MOS transistor(TR) having low threshold voltage and realizing stable operation in a circuit for controlling the substrate potential of the CMOS circuit to reduce a sub-threshold current. SOLUTION: This semiconductor integrated circuit device is provided with a main circuit LOG including a MOS TR constituted on a semiconductor substrate, a substrate potential control circuit VBC for controlling voltage impressed to the substrate and a substrate potential conversion circuit SWCELL for controlling voltage impressed to the substrate of the main circuit LOG. Then, control signals Φp, Φn outputted from the circuit VBC are inputted to the gate of a MOS TR constituting the circuit SWCELL and substrate potential outputs Vbp, Vbn outputted from the circuit VBC are inputted to the substrate of the MOS TR constituting the main circuit LOG through the circuit SWCELL.

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