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    • 1. 发明专利
    • CHARGED CORPUSCULAR BEAM DEVICE
    • JPH02132742A
    • 1990-05-22
    • JP28359588
    • 1988-11-11
    • HITACHI LTD
    • SHINADA HIROYUKITODOKORO HIDEOFUKUHARA SATORUKIYOFUJI SHIGEMITSU
    • H01J37/22H01J37/248
    • PURPOSE:To make it possible to measure the wide range of a magnetic field intensity from a weak magnetic field to a strong one with, the high accuracy of a measured position and the high measuring accuracy of an electric field or a magnetic field, maintained by measuring the acceleration voltage of a charged corpuscular beam with switching of two stages or more made. CONSTITUTION:For example, when a magnetic field having 10 oerstead or below is measured with an electron beam of 5kV, the position alteration Xd of the electron beam on a position detector is 10mum, and becomes 10mum or below resolution of the detector, hence the measuring data in which acceleration voltage is 500V are used. On the other hand, when a magnetic field intensity becomes 300 oerstead, since the alteration Xd quantity of the electron beam becomes up to 300mum and its position accuracy d exceeds 0.05mum, then in this case, the data measured with an acceleration volt of 50kv are used. Thus by measuring using the electron beam having different acceleration voltage by the position signal of the position detector, the wide range of a magnetic field intensity can be measured with high measuring accuracy maintained.
    • 2. 发明专利
    • CHARGED BEAM DEVICE
    • JPH01241746A
    • 1989-09-26
    • JP6739288
    • 1988-03-23
    • HITACHI LTD
    • TODOKORO HIDEOKIYOFUJI SHIGEMITSU
    • G01N23/225G01R19/00G01R31/302H01J37/252
    • PURPOSE:To prevent the measurement error, to obtain a high accuracy, and to improve the operational property, by designating two positions in a scanning image, and is radiating within a rectangle with the diagonal of the two positions, and in the rectangle formed by reducing both sides of the rectangle in the designated two reduction ratios. CONSTITUTION:When the potential of a laterally long wiring 15 is measured, two points P1 and P2 at the upper and the lower edges of the wiring 15 are designated, and a rectangle area with the diagonal of points P1' and P2' at the preliminarily designated reduction ratios Kx and Ky is irradiated with the electron beams. That is, a coordinates input operation device 14 outputs the coordinates of P1 and P2, and the coordinates of P1' and P2' operated in the designated operation to a digital scanning circuit 6. And on a cathode-ray tube 9, both the rectangle formed of P1 and P2, and the rectangle formed of P1' and P2' are displayed, for example. The accuracy of the element analysis, the analysis of potential measurement area, or the potential measurement is improved consequently.
    • 4. 发明专利
    • DEFLECTION ANGLE MEASURING DEVICE FOR CHARGED PARTICLE BEAM AND DISPLAY METHOD
    • JPH03283248A
    • 1991-12-13
    • JP8073790
    • 1990-03-30
    • HITACHI LTD
    • KANEOKA NORIYUKIFUKUHARA SATORUKIYOFUJI SHIGEMITSU
    • H01J37/22H01J37/244
    • PURPOSE:To concurrently display deflection quantities of the X-axis and the Y-axis by providing a charged particle detector for detecting the secondary charged particles from a sample, a signal processing circuit processing the signal from the charged particle detector and the deflection angle signal from a position detector, and a display unit displaying the image of the sample by a scanning electron microscope and the distribution of the deflection quantity of a charged particle beam. CONSTITUTION:A measuring device is constituted of a scanning deflector 6, a charged particle detector 7, a sample 8 (e.g. micro-magnetic head), a position detector 9, a deflection signal generating circuit 1, a signal processing circuit 2, a controller 3, and a display unit 4. The scanning deflector 6 two-dimensionally scans and deflects a charged particle beam 5 according to the two-dimensional scanning signal generated by the deflection signal generating circuit 1. The secondary charged particles generated when the charged particle beam 5 is radiated to the sample 8 are detected by the charged particle detector 7 and inputted to the signal processing circuit 2. The controller 3 transfers the secondary charged particle data stored in a buffer memory 204 to the display unit 4 in sequence.
    • 5. 发明专利
    • MAGNETIC FIELD MEASURING INSTRUMENT USING CHARGED PARTICLE BEAM
    • JPH03146887A
    • 1991-06-21
    • JP28295689
    • 1989-11-01
    • HITACHI LTD
    • FUKUHARA SATORUSHINADA HIROYUKIKIYOFUJI SHIGEMITSU
    • G01R33/028G01R31/305G01R33/02G01R33/10
    • PURPOSE:To always detect position relation between a sample and an electron beam and to prevent the collision of the electron beam with the sample occurring by detecting the phase relation of a primary charged-particle beam with the sample, and changing the scanning position of the electron beam based on a detection signal. CONSTITUTION:A primary electron beam 2 emitted from an electron gun 1 is made incident on the front plane of a magnetic head 5 that is the sample converged thinly with an objective lens 4, i.e. a position separated by several microns in a Z-axial direction from the gap of the head 5. Since an arbitrary coil current flows on the head 5, a leakage magnetic field is generated from the gap. An incident primary electron beam 2 receives deflection of pre scribed angle by the leakage magnetic field, and is made incident on a semiconductor position detecting element 6. The quantity of deflection is converted to position information, and is detected as the output current of the position detecting element 6. Furthermore, it is converted to magnetic field information with a magnetic field detection circuit 7, and is inputted to a central processing circuit 13. Thereby, position control for the electron beam and the magnetic head 5 that is the sample can be performed easily and with high accuracy, therefore, the leakage magnetic field nearest to the magnetic head 5 can be measured.
    • 6. 发明专利
    • Correction of astigmatism
    • 校正的修正
    • JPS61114451A
    • 1986-06-02
    • JP23315184
    • 1984-11-07
    • Hitachi Ltd
    • MURAKOSHI HISAYAICHIHASHI MIKIOFUKUHARA SATORUKIYOFUJI SHIGEMITSUTODOKORO HIDEO
    • H01J37/153H01J37/28
    • H01J37/153
    • PURPOSE:To enable optimum correction of astigmatism to be achieved according to correction values by installing two astigmatism correctors with different directions and controlling one of the correctors while the other one is maintained at a constant value to obtain one of the correction values and then controlling the latter one while the former one is maintained at a constant value to obtain the other correction value. CONSTITUTION:An astigmatism correcting device consisting of installed correctors 8A and 8B with different directions, is installed in the path of a microprobe 3 for a scanning electron microscope or a similar device. First, while the corrector 8A is maintained at a constant value, the corrector 8B is used to obtain a first correction value with which the probe diameter is minimized and then the first correction value is stored in a memory circuit 18A. Next, while the corrector 8B is maintained at a constant value, the corrector 8A is used to obtain a second correction value with which the probe diameter is minimized and then the second correction value is stored in a memory circuit 18B. After that, the first and the second correction values are combined by a computing circuit 19 before being used to control the correctors 8A and 8B through a controller 17. Therefore, optimum correction of the astigmatism can be achieved in a short time and the correction can be automatically performed.
    • 目的:通过安装具有不同方向的两个散光校正器,控制其中一个校正器,另一个维持在一个恒定值,以便通过校正值来实现对像散的最佳校正,以获得一个校正值,然后控制 后一个,而前一个维持在恒定值以获得另一个校正值。 构成:由用于扫描电子显微镜或类似装置的微探针3的路径中安装由安装有不同方向的校正器8A和8B组成的像散校正装置。 首先,当校正器8A保持恒定值时,校正器8B用于获得探针直径最小化的第一校正值,然后将第一校正值存储在存储器电路18A中。 接下来,当校正器8B保持恒定值时,校正器8A用于获得探针直径最小化的第二校正值,然后将第二校正值存储在存储器电路18B中。 之后,第一和第二校正值在被用于通过控制器17控制校正器8A和8B之前由计算电路19组合。因此,可以在短时间内实现像散的最佳校正,并且校正可以 自动执行。
    • 8. 发明专利
    • VOLTAGE MEASURING DEVICE USING ELECTRON BEAM
    • JPH02295043A
    • 1990-12-05
    • JP11492089
    • 1989-05-10
    • HITACHI LTD
    • KIYOFUJI SHIGEMITSUTODOKORO HIDEO
    • H01J37/22
    • PURPOSE:To decrease errors in measurement caused by attachment of contamination to a portion irradiated with an electron beam by detecting only secondary electrons generated from a second area designated in advance within a first area. CONSTITUTION:A gate control circuit 25 performs control of opening/closing a gate 26 located between the output of a secondary electron detector 6 and a signal processing circuit 24 according to control signals transmitted from a scanning signal source 20. The signal processing circuit 24 performs signal processing such as addition average, smoothing and the like against the output signals of the secondary electron detector 6 that have passed through the gate 26, and the circuit 24 forms data of S-curve, etc. The output of the signal processing circuit 24 is transmitted to a display portion 27 or a computer 28 and is utilized as data of voltage measurement. In this case, voltage measurement is carried out by detection of secondary electrons only at places with less contamination within an electron beam irradiation area, and so measurement with less errors is enabled.
    • 9. 发明专利
    • CHARGED PARTICLE BEAM DEFLECTION ANGLE MEASURING DEVICE
    • JPH02119035A
    • 1990-05-07
    • JP27065688
    • 1988-10-28
    • HITACHI LTD
    • SHINADA HIROYUKIFUKUHARA SATORUTODOKORO HIDEOKIYOFUJI SHIGEMITSU
    • H01J37/04H01J37/244
    • PURPOSE:To always control a position being radiated with a charged particle beam in the central part of a position photodetector so as to measure the deflection angle of the charged particle beam in a large scope, while excellently keeping linearity in measurement, by entering the charged particle beam into the position photodetector and then returning the detection result output to a deflecting device. CONSTITUTION:A charged particle beam 1 passes through a deflecting device 3 to enter a position photodetector 5. A deflecting circuit 72 adds a deflecting signal operatively associated with a position signal detected by the position photodetector 5, to the deflecting device 3. This deflecting signal causes the charged particle beam to irradiate the constant position of the swingback photodetector 5 even if the charged particle beam varies in deflection angle. At this moment, the deflecting signal being added to the deflecting device 3 is proportioned to the deflection angle of the charged particle beam. Moreover, the charged particle beam is always located at the constant position of the position photodetector 5 so that a photodetector having its small effective area may suffice the position photodetector 5 and yet an error in measurement is prevented from being caused even with nonlinearity present in the position signal.