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    • 1. 发明专利
    • PRODUCTION OF OPTICAL INTEGRATED CIRCUIT
    • JPS63287806A
    • 1988-11-24
    • JP12122287
    • 1987-05-20
    • HITACHI LTD
    • IMOTO KATSUYUKIMIYAZAKI MASARUANO HIROMIITO YUMI
    • G02B6/13G02B6/12
    • PURPOSE:To obtain the title circuit with reduced loss by effecting a gaseous phase decomposition of the gas of a silicon compd. composed of its hydride or contg. an additive for controlling refractive index at a prescribed temp. to form a glass film, followed by patterning it and then, by thermally treating the obtd. film at the temp. higher than said prescribed temp., thereby lessening unevenness of the side wall surface of a waveguide. CONSTITUTION:The gas of the silicon compd. composed of its hydride or contg. the additive (P, B, etc.) for controlling the refractive index is thermally decomposed at 250-550 deg.C, thereby forming the glass film on a substrate plate 1. Then, the obtd. glass plate 2 is patterned by a technique such as a photolithography or a dryetching, etc., followed by thermally treating at the temp. higher than that of the gaseous phase decomposition (such as more than 700 deg.C and less than 1,500 deg.C). Thus, the rectangular waveguide 7 is formed by patterning the glass film as a core layer formed at a low temp. and then, the edge of said waveguide is rounded by thermally treating at a high temp. and the glass film of the waveguide is made minute, thereby uniforizing the waveguide.