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1. 发明专利

JP2011129822A Compound semiconductor epitaxial growth device 审中-公开
标题翻译：化合物半导体外延生长装置
公开(公告)号：JP2011129822A
公开(公告)日：2011-06-30
申请号：JP2009289252
申请日：2009-12-21
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： FUTAKUCHI NAOKI , TSUCHIYA TADAITSU
IPC分类号： H01L21/205 , C23C16/30
摘要： PROBLEM TO BE SOLVED: To provide a compound semiconductor epitaxial growth device having a structure capable of suppressing deterioration of an epitaxial thin film by re-evaporation of decomposition extraneous matter by suppressing adhesion of foreign matter onto a substrate by allowing the structure to prevent generation of the decomposition extraneous matter in a reactor, and reducing the number of times of maintenance for removing the decomposition extraneous matter in the reactor.
SOLUTION: In this compound semiconductor epitaxial growth device 10 for supplying a raw material containing a group V element into a reactor 11 with a substrate 13 stored therein to subject the raw material to vapor-phase epitaxial growth on the substrate 13, the raw material containing the group V element is decomposed, and a hydrogen radical supply means 36 for running gas excessively containing a hydrogen radical is connected to the upstream side of an adhesion part 17 to which the decomposed deposits adhere in the reactor 11.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种化合物半导体外延生长装置，其具有能够通过抑制外来物质附着在基板上而使外部薄膜的附着物再次蒸发来抑制外延薄膜的劣化的结构，防止在反应器中产生分解的外来物质，并且减少用于除去反应器中分解的外来物质的维护次数。解决方案：在这种化合物半导体外延生长装置10中，用于将含有V族元素的原料供入反应器11中，其中存储有基材13，以使原料在基板13上进行气相外延生长，含有V族元素的原料分解，并且用于使过量含有氢自由基的气体运行的氢根供给装置36连接到分解的沉积物附着在反应器11中的粘附部17的上游侧。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2002246651A LIGHT-EMITTING DIODE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002246651A
公开(公告)日：2002-08-30
申请号：JP2001043090
申请日：2001-02-20
申请人： HITACHI CABLE
发明人： AKIMOTO KATSUYA , SHIBATA MASATOMO , TSUCHIYA TADAITSU , OSHIMA YUICHI
IPC分类号： H01L33/32 , H01L33/50 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To obtain a mixed color light-emitting diode that allows the material and process of resin mold that are exactly the same as those of the conventional monochromatic light-emitting diode to be applied, and prevents the decrease in emission efficiency and increase in a drive voltage as compared with the conventional monochromatic light-emitting diode. SOLUTION: Semiconductor layers 3-7 are stacked on a substrate 2 having at least a layer of fluorescent glass layer 1, or at least a layer of fluorescent glass layer 11 is stacked or joined to a compound semiconductor wafer where semiconductor layers 13-17 are stacked and formed.

3. 发明专利

JPH06302516A VAPOR GROWTH METHOD 失效
公开(公告)号：JPH06302516A
公开(公告)日：1994-10-28
申请号：JP8601893
申请日：1993-04-13
申请人： HITACHI CABLE
发明人： NAGAI HISATAKA , TSUCHIYA TADAITSU
IPC分类号： H01L21/205
摘要： PURPOSE:To uniform the thickness of thin films by specifying the total number of susceptor rotations. CONSTITUTION:A susceptor with a substrate held thereon is rotated, and further material gas is fed along the surface of the substrate to grow a crystal thin film. The total number R of susceptor rotations for a period from the start to the end of the growth of the crystal thin film is determined by an equation of R>=L/2x-0.5, where L (%) is the variability of the thickness of the thin film when the susceptor is at a standstill, and x (%) is the one when it is rotated.

4. 发明专利

JPH03205834A FIELD-EFFECT TRANSISTOR 失效
公开(公告)号：JPH03205834A
公开(公告)日：1991-09-09
申请号：JP86790
申请日：1990-01-05
申请人： HITACHI CABLE
发明人： SAKAGUCHI HARUNORI , TSUCHIYA TADAITSU
IPC分类号： H01L21/20 , H01L21/338 , H01L29/778 , H01L29/812
摘要： PURPOSE:To improve the electric characteristics and crystallinity of an InxGa1-xAs channel layer by sandwiching the channel layer between a carrier block layer on the substrate side and a carrier supplier layer on the other side, wherein the indium content (x) in the channel layer is increased gradually from the substrate side toward the other side. CONSTITUTION:An InxGa1-xAs channel layer 9 is sandwiched between mixed crystal layers having a larger energy band gap than the channel layer. The mixed crystal layer on the substrate side is a carrier block layer 7, and the other mixed crystal layer is a carrier supplier layer 5. The indium content (x) in the channel layer 9 at the interface with the carrier block layer 7 is determined so that the lattice constant of InGaAs may be closest to the lattice constant of the layer 7. The indium content (x) at the interface with the carrier supplier layer 5 is determined so that the energy band gaps of the channel layer and the supplier layer 5 may become maximum. The proportion (x) in the channel layer 9 is varied continuously between the interface with the carrier supplier layer and the interface with the carrier block layer.

5. 发明专利

JPH0350744A MANUFACTURE OF FIELD-EFFECT TRANSISTOR 失效
公开(公告)号：JPH0350744A
公开(公告)日：1991-03-05
申请号：JP18579289
申请日：1989-07-18
申请人： HITACHI CABLE
发明人： SAKAGUCHI HARUNORI , MEGURO TAKESHI , TSUCHIYA TADAITSU , SAITO HIROSHI
IPC分类号： H01L21/205 , H01L21/338 , H01L29/812
摘要： PURPOSE:To realize superior quality by a method wherein, when an n GaAs ohmic contact layer is selectively re-grown on a substrate by MOCVD method, the concentration ratio of group V raw material to group III raw material in vapor phase in a specified range of growth temperature is so set that, when undoped GaAs is grown, its carrier concentration becomes less than or equal to a specified value. CONSTITUTION:In a GaAs MESFET of n GaAs selective re-growth structure or a FET of n GaAs selective re-growth structure having a hetero structure, an n GaAs layer to obtain an ohmic contact is selectively re-grown on a sub strate by MOCVD method. The selective re-growth is performed in the range of growth temperature of 450-550 deg.C. In addition, the concentration ratio of group V raw material to group III raw material in vapor phase is so set that the carrier concentration of undoped GaAs grown in the above temperature range becomes less than or equal to 10 cm . Thereby the selective re-growth of an n GaAs layer of superior quality is realized without generating impurity diffusion and the deterioration of hetero interface sharpness.

6. 发明专利

JP2010135205A Coaxial cable and manufacturing method of the same 审中-公开
标题翻译：同轴电缆及其制造方法
公开(公告)号：JP2010135205A
公开(公告)日：2010-06-17
申请号：JP2008310823
申请日：2008-12-05
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： ABE TOMIYA , ISHIKAWA MASARU , ITO MASANORI , TSUCHIYA TADAITSU
IPC分类号： H01B11/18 , H01B3/44 , H01B7/02 , H01B11/06 , H01B13/016
CPC分类号： H01B11/1817 , B05D2256/00 , B82Y30/00 , H01B3/445 , H01B13/225 , H01B13/24
摘要： PROBLEM TO BE SOLVED: To provide a small-diameter coaxial cable which is resistant to deformation, and to provide a manufacturing method for the cable.
SOLUTION: In the coaxial cable with an inner insulation layer formed at an outer periphery of an electric conductor, and further, with a conductive layer formed at an outer periphery of the inner insulation layer, the conductive layer is made of metal nanoparticle paste sintered body for sintering metal nanoparticle paste by light irradiation, and an outer insulation layer is formed on an outer periphery of the conductive layer.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供耐变形的小直径同轴电缆，并提供电缆的制造方法。解决方案：在具有形成在导电体的外周的内绝缘层的同轴电缆中，并且还具有形成在内绝缘层的外周的导电层，导电层由金属纳米颗粒通过光照射烧结金属纳米粒子糊的糊状烧结体，在导电层的外周形成外绝缘层。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2003339174A Actuator element 审中-公开
标题翻译：执行元件
公开(公告)号：JP2003339174A
公开(公告)日：2003-11-28
申请号：JP2002147540
申请日：2002-05-22
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： TSUCHIYA TADAITSU
IPC分类号： H02N2/00
摘要： PROBLEM TO BE SOLVED: To provide an actuator element which has large displacement and displacing stress and proper stress resistance. SOLUTION: The actuator element 10 comprises an ion exchange resin molding 11; and metal electrodes 14a, 14b provided in an insulating state from each other on the surface of the molding 11. Thus, a potential difference is applied between the electrodes 14a and 14b, to generate a bend or a deformation. The molding 11 is formed of an anion exchange resin, and the molding 11 is impregnated with water 13 containing HSiO 3 - , HCO 3 - , HCO 2 - or CH 3 COO - as anion 12. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供具有大的位移和位移应力和适当的应力阻力的致动器元件。解决方案：致动器元件10包括离子交换树脂模制件11; 以及在模制品11的表面上彼此隔离的金属电极14a，14b。因此，在电极14a和14b之间施加电位差，产生弯曲或变形。模制件11由阴离子交换树脂形成，并且模制件11浸渍含有含有HSiO 3 SBB的水13，SP 3，SP 3，SP 3 > - ，HCO 2 - 或CH 3 COO - 版权所有（C）2004，JPO

8. 发明专利

JP2002232008A SEMICONDUCTOR LIGHT EMITTING ELEMENT AND EPITAXIAL WAFER 失效
公开(公告)号：JP2002232008A
公开(公告)日：2002-08-16
申请号：JP2001029300
申请日：2001-02-06
申请人： HITACHI CABLE
发明人： OSHIMA YUICHI , SHIBATA MASATOMO , AKIMOTO KATSUYA , TSUCHIYA TADAITSU
IPC分类号： C09K11/00 , C09K11/62 , C09K11/64 , C09K11/70 , C09K11/74 , C09K11/88 , H01L33/28 , H01L33/32 , H01L33/50 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element, which can be made having a semiconductor light emitting element consisting of one kind of material as a base by simple method, and by which the light emission of various tints including white and middle colors can be obtained, and an epitaxial wafer at low prices. SOLUTION: In the semiconductor light emitting element where at least a lower clad layer 3 of the first conductivity type, a luminous layer 4 smaller in band gap energy than that of the lower clad layer, an upper clad layer 6 of the second conductivity type larger in band gap energy than that of luminous layer are stacked on a substrate 1, a semiconductor layer including one or more kinds of rare earth elements is inserted into a side upper or a side lower than the above luminous layer 4, and the rare earth element doped in this insertion layer 5 produces fluorescence, being excited by the light emitted from the above luminous layer 4.

9. 发明专利

JP2002164577A LIGHT-EMITTING ELEMENT 失效
公开(公告)号：JP2002164577A
公开(公告)日：2002-06-07
申请号：JP2000362676
申请日：2000-11-24
申请人： HITACHI CABLE
发明人： AKIMOTO KATSUYA , SHIBATA MASATOMO , TSUCHIYA TADAITSU , OSHIMA YUICHI
IPC分类号： H01L33/32 , H01L33/50 , H01L33/62 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To easily provide a mixed color light emitting element which is manufactured in the same process as for a conventional monochromatic light emitting element at a cost lower than for a light emitting element manufactured on a GaN substrate containing fluorescence core. SOLUTION: Nitride compound semiconductor layers 2-6 are laminated on a substrate 1 comprising an Al2O3 single crystal in which Ti is doped, or an Al2O3-contained material in which Ti is doped, constituting a light-emitting element.

10. 发明专利

JP2000315692A COMPOUND SEMICONDUCTOR EPITAXIAL WAFER AND HETEROBIPOLAR TRANSISTOR ELEMENT USNG THE SAME 失效
公开(公告)号：JP2000315692A
公开(公告)日：2000-11-14
申请号：JP12198099
申请日：1999-04-28
申请人： HITACHI CABLE
发明人： SAKAGUCHI HARUNORI , TSUCHIYA TADAITSU , TAKANO KAZUTO , OTOGI YOHEI
IPC分类号： H01L29/73 , H01L21/331 , H01L29/205 , H01L29/737
摘要： PROBLEM TO BE SOLVED: To eliminate propagation of faults due to a GaAs substrate into an epitaxial layer in an HBT(heterobipolar transistor) and an epitaxial wafer. SOLUTION: This compound semiconductor epitaxial wafer comprises a buffer of a multilayer structure obtained, by laminating a buffer layer 10 of a multilayer structure obtained through lamination of AlGaAs and GaAs in a plurality of periods, the buffer layer of a multilayer structure obtained by laminating AlXGa1-XAs and AlYGa1-YAs in a plurality of periods or a buffer layer of a multilayer structure obtained by laminating InGaAs and GaAs in a plurality of periods.

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