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1. 发明专利

JPS63265893A PRODUCTION OF ARTIFICIAL QUARTZ CRYSTAL 失效
公开(公告)号：JPS63265893A
公开(公告)日：1988-11-02
申请号：JP10047187
申请日：1987-04-23
申请人： HIRANO SHINICHI , SEIKO INSTR & ELECTRONICS
发明人： HIRANO SHINICHI , KURODA HIROSHI , TOYOKUNI AKIRA
IPC分类号： C30B7/10 , C30B29/18
摘要： PURPOSE:To contrive reduction of pressure and temp. at a time for growth of the titled crystal and to grow high-quality crystal with little in the impurity and defect by using a sodium nitrate aq. soln. as a solvent in the case of growing the crystal by a hydrothermal synthesizing method. CONSTITUTION:Crushed raw ore of natural rock crystal is provided as a raw material 4 for growth on the bottom part of a pressure vessel main body 1 which is sealed under pressure with a cover 3 via a sealing ring 2. A Z-plate of crystal having natural or artificial optical grade as seed crystal 6 is arranged thereon via a supporting frame 5 of seed crystal. A buffle plate 7 is provided between the raw material 4 for growth and seed crystal 6 via the supporting frame 5. An NaNO3 aq. soln. is filled as a medium in the inside of the pressure vessel having such a constitution as this in such a packing rate that prescribed pressure is obtained at the prescribed temp. and hydrothermal synthesis is performed. The impurities and a defect of the inside of grown crystal can be reduced because artificial quartz crystal can be grown at comparatively low pressure and temp. by this process.

2. 发明专利

JPS6428298A PRODUCTION OF CALCIUM CARBONATE SINGLE CRYSTAL 失效
公开(公告)号：JPS6428298A
公开(公告)日：1989-01-30
申请号：JP25776287
申请日：1987-10-13
申请人： HIRANO SHINICHI , SEIKO INSTR & ELECTRONICS
发明人： HIRANO SHINICHI , KURODA HIROSHI , TOYOKUNI AKIRA
IPC分类号： C30B29/10 , C30B7/00 , C30B7/10
摘要： PURPOSE:To obtain the titled single crystal having excellent stability of the quality and useful as a material for optical polarizer, by dissolving a starting raw material such as CaCO3 in an aqueous solution of NH4NO3 and subjecting to hydrothermal synthesis in a pressure vessel under prescribed temperature and pressure condition. CONSTITUTION:A starting raw material consisting of CaCO3 of high-purity reagent grade is dissolved in an aqueous solution of NH4NO3 used as a solvent. The obtained solution is put into a pressure vessel and subjected to hydrothermal synthesis at 100-360 deg.C under pressure to effect the growth of a CaCO3 single crystal.

3. 发明专利

JPS62176995A METHOD FOR RECRYSTALLIZING BERYL SINGLE CRYSTAL 失效
公开(公告)号：JPS62176995A
公开(公告)日：1987-08-03
申请号：JP1960086
申请日：1986-01-31
申请人： HIRANO SHINICHI , SEIKO INSTR & ELECTRONICS
发明人： HIRANO SHINICHI , TOYOKUNI AKIRA , KURODA HIROSHI
IPC分类号： C30B7/10 , C30B29/34
摘要： PURPOSE:To obtain an optical grade beryl single crystal which is reduced in flaws or impurities and is uniform by providing a raw material in an autoclave packed with a chloride aq. soln. and recrystallizing beryl single crystal in the prescribed heating and pressurizing. CONSTITUTION:A raw material is provided in an autoclave packed with an aq. soln. contg. chloride as an essential component. Then beryl single crystal is recrystallized by giving the prescribed temp. and pressure thereto. NaCl, KCl and LiCl and shown as used chloride. Natural beryl single crystal and beryl single crystal synthesized by a flux method, etc., are used as the raw material. Beryl single crystal obtained by this recrystallizing method is extensively used as a synthetic gem for decoration and expected as important crystal in a laser optics field in future.

4. 发明专利

JPS62235297A PRODUCTION OF BAPB1-XBIXO3 SINGLE CRYSTAL 失效
公开(公告)号：JPS62235297A
公开(公告)日：1987-10-15
申请号：JP7734786
申请日：1986-04-03
申请人： HIRANO SHINICHI , SEIKO INSTR & ELECTRONICS
发明人： HIRANO SHINICHI , TOYOKUNI AKIRA , KURODA HIROSHI
IPC分类号： C30B7/10 , C30B7/00 , C30B29/22
摘要： PURPOSE:To produce the titled single crystal without any impurities, variations in composition X, and internal strains and which can be treated at a comparatively low temp. by growing a crystal by the hydrothermal synthesis at specified temp. and pressure in an aq. soln. consisting essentially of nitrates. CONSTITUTION:A starting material and a substrate for growth are set in an autoclave filled with an aq. soln. consisting essentially of nitrates (e.g., LiNO3, KNO3, NaNO3, etc.), and the BaPb1-xBixO3 single crystal is grown by the hydrothermal synthesis at necessary temp. and pressure. The growth can be carried out by this method at about 300-600 deg.C, which are fairly low as compared with the conventional technique. Consequently, the titled single crystal without any impurities, variations in composition X, and internal strains can be produced.

5. 发明专利

JPS62113798A PRODUCTION OF CALCIUM CARBONATE SINGLE CRYSTAL 失效
公开(公告)号：JPS62113798A
公开(公告)日：1987-05-25
申请号：JP25312485
申请日：1985-11-12
申请人： HIRANO SHINICHI , SEIKO INSTR & ELECTRONICS
发明人： HIRANO SHINICHI , TOYOKUNI AKIRA , KURODA HIROSHI
IPC分类号： C30B29/10 , C30B7/00 , C30B7/10
摘要： PURPOSE:To obtain calcium carbonate single crystal useful as an optical material, having improved quality, by growing calcium carbonate single crystal in an aqueous solution of nitrate by hydrothermal synthesis method. CONSTITUTION:Calcium carbonate single crystal is grown in an aqueous solution of nitrate by hydrothermal synthesis method providing given temperature and pressure. In the hydrothermal synthesis method, a starting raw material is dissolved in an aqueous solution of a proper solvent and annealed or a nutritive component is transported by using temperature difference so that crystal is crystallized or grown on a proper substrate. The solvent is required to have conditions such as sufficient dissolution of the raw material, not much corrosive properties of autoclave, etc. The aqueous solution of nitrate is an ideal solvent for these demands.

6. 发明专利

JPS62171998A RECRYSTALLIZATION OF BERYL SINGLE CRYSTAL 失效
公开(公告)号：JPS62171998A
公开(公告)日：1987-07-28
申请号：JP1139486
申请日：1986-01-22
申请人： HIRANO SHINICHI , SEIKO INSTR & ELECTRONICS
发明人： HIRANO SHINICHI , TOYOKUNI AKIRA , KURODA HIROSHI
IPC分类号： C30B7/10 , C30B29/34
摘要： PURPOSE:In the production of beryl single crystals from a powder of impure beryl single crystals by the hydrothermal process, the recrystallization is effected hydrothermally in an aqueous nitrate solution at a certain high temperature and high pressure to give beryl single crystals of extremely high purity. CONSTITUTION:A powder of beryl single crystals containing contaminants 6 such as naturally occurring beryl single crystals or those synthesized by the flux method and an aqueous solution of a nitrate selected from sodium, potassium and lithium nitrates 7, preferably sodium nitrate solution of 3mol% concentration as a solvent, are tightly sealed in a metallic capsule 5, and the capsule is placed in an autoclave 1. The autoclave is heated with an electric furnace at about 400 deg.C and 800kg/cm for 7 days for hydrothermal treatment whereby high-purity beryl single crystals of the optical level are formed by recrystallization.

7. 发明专利

JPS63230593A PRODUCTION OF CALCIUM CARBONATE SINGLE CRYSTAL 失效
公开(公告)号：JPS63230593A
公开(公告)日：1988-09-27
申请号：JP6194287
申请日：1987-03-17
申请人： HIRANO SHINICHI , SEIKO INSTR & ELECTRONICS
发明人： HIRANO SHINICHI , KIKUTA KOICHI , KURODA HIROSHI , TOYOKUNI AKIRA
IPC分类号： C30B7/10 , C30B29/10
摘要： PURPOSE:To produce a CaCO3 single crystal containing little defects in the crystal and having comparable optical grade to natural calcite, under relatively low pressure, by hydrothermal synthesis in an aqueous solution of Ca(NO3)2. CONSTITUTION:A raw material 8 for growth obtained by the purification and recrystallization of a high-purity reagent-grade CaCO3 in a solution of Ca(NO3)2 is put into a pressure vessel 5, a seed crystal 10 and a baffle plate 11 are placed in the vessel using a seed crystal holding frame 9, 3-4mol. of a Ca(NO3)2 solution is filled in the vessel and the vessel is pressure-sealed with a cover 7 via a seal ring 6. The pressure vessel 5 is heated at 200-400 deg.C and the hydrothermal synthesis is carried out while keeping the pressure in the vessel 5 to 500-1,000kg/cm to effect the growth of a CaCO3 single crystal on the seed crystal 10.

8. 发明专利

JPS62246898A PRODUCTION OF BERYL SINGLE CRYSTAL 失效
公开(公告)号：JPS62246898A
公开(公告)日：1987-10-28
申请号：JP9157686
申请日：1986-04-21
申请人： HIRANO SHINICHI , SEIKO INSTR & ELECTRONICS
发明人： HIRANO SHINICHI , TOYOKUNI AKIRA , KURODA HIROSHI
IPC分类号： C30B7/10 , C30B29/22 , C30B29/34
摘要： PURPOSE:To easily obtain a beryl single crystal useful for synthetic jewels for ornamentation and laser optics by growing the beryl single crystal by a hydrothermal synthesis method which applies a prescribed temp. and pressure in an aq. LiCl soln. CONSTITUTION:An autoclave body 1 is pressure-sealed by a cover 3 via a seal ring 2. A raw material 4 for growing the lower part is installed in the lower part of the autoclave body 1. The raw material 4 for growing the lower part consists of Al(OH)3 and Be(OH)2. A seed crystal 6 is then installed via a seed crystal supporting frame 5. A buffer plate 7 is similarly installed between the raw material 4 and the seed crystal 6 via a seed crystal supporting frame 5. A raw material 8 for growing the upper part consisting of SiO2 is finally installed to the upper part of the seed crystal 6. The raw materials Al(OH)3, Be(OH)2 and SiO2 are preliminarily weighed so as to respectively constitute the compsn. of Be3Al2(SiO3)6 in this case. The aq. LiCl soln. is filled into the pressure vessel constituted in the above-mentioned manner at such a filling rate at which the prescribed pressure is obtd. at a prescribed temp. The hydrothermal synthetic and crystal growth treatment are thus executed for a suitable period.

9. 发明专利

JPS62171997A RECRYSTALLIZATION OF BERYL SINGLE CRYSTAL 失效
公开(公告)号：JPS62171997A
公开(公告)日：1987-07-28
申请号：JP1139386
申请日：1986-01-22
申请人： HIRANO SHINICHI , SEIKO INSTR & ELECTRONICS
发明人： HIRANO SHINICHI , TOYOKUNI AKIRA , KURODA HIROSHI
IPC分类号： C30B7/10 , C30B29/34
摘要： PURPOSE:The recrystallization of natural beryl single crystals including many defects and contaminants is effected in an autoclave using LiCl saturated solu tion as a solvent at prescribed temperature and pressure to produce beryl single crystals of high purity. CONSTITUTION:A powder 6 of beryl single crystals with many defects or contaminants such as naturally occurring beryl single crystals or beryl single crystals synthesized by the flux method and saturated aqueous solution of LiCl 7 of 10mol% or higher concentration are charged in a metallic capsule 5 and the capsule is placed in an autoclave 1. The autoclave is heated in an electric furnace and high pressure is generated in the metallic capsule. At this time, distilled water is forcibly introduced into the autoclave by means of an outer pump to balance the pressure between the inside and the outside of the capsule to avoid its bursting. The temperature and the pressure are kept at 480-500 deg.C and 750kg/cm or higher for 7 or more days whereby beryl single crystals of high purity are recrystallized in the capsule.

10. 发明专利

JPH0336797B2 失效
公开(公告)号：JPH0336797B2
公开(公告)日：1991-06-03
申请号：JP25312485
申请日：1985-11-12
申请人： HIRANO SHINICHI , SEIKOO DENSHI KOGYO KK
发明人： HIRANO SHINICHI , TOYOKUNI AKIRA , KURODA HIROSHI
IPC分类号： C30B29/10 , C30B7/00 , C30B7/10

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