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1. 发明专利

JP2008034668A Organic solar battery, module thereof, and manufacturing method thereof 审中-公开
标题翻译：有机太阳能电池及其制造方法及其制造方法
公开(公告)号：JP2008034668A
公开(公告)日：2008-02-14
申请号：JP2006207328
申请日：2006-07-31
申请人： Furukawa Electric Co Ltd:The , Japan Advanced Institute Of Science & Technology Hokuriku , 古河電気工業株式会社 , 国立大学法人北陸先端科学技術大学院大学
发明人： SHU IMEI , TODA SADAYUKI , KOAIZAWA HISASHI , MURATA HIDEYUKI
IPC分类号： H01L51/42
CPC分类号： Y02E10/549 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide an organic solar battery and an organic solar battery module which can sharply improve a light absorption coefficient through an organic semiconductor layer, and can achieve high power generation efficiency, and to provide a manufacturing method with high productivity based on continuous manufacturing processes. SOLUTION: The organic solar battery 10 has the structure of a filament body of which the axial direction is sufficiently longer than an aperture length. A light guide 11 makes light incident from the upper end and makes the light incident into the inside incident and absorb onto a solar battery layer composed of a p-type organic semiconductor 13 and an n-type organic semiconductor 14. Since a reflection film 15 is formed on the outer periphery of the solar battery layer, light passed without being absorbed into the solar battery layer is reflected by the reflection film 15, and made incident and absorbed into the solar battery layer again or returned to the light guide 11 without being absorbed. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种有机太阳能电池和有机太阳能电池模块，其可以通过有机半导体层急剧地提高光吸收系数，并且可以实现高发电效率，并且提供具有高的发光效率的制造方法基于连续制造工艺的生产率。解决方案：有机太阳能电池10具有其轴向方向比孔径长度充分长的灯丝体的结构。光导11使从上端入射的光使入射到内部的光入射并吸收到由p型有机半导体13和n型有机半导体14构成的太阳能电池层上。由于反射膜15 形成在太阳能电池层的外周，通过而不被太阳能电池层吸收的光被反射膜15反射，并且再次入射并吸收到太阳能电池层中或返回到导光体11而不会吸收。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2010065296A Method and apparatus for continuously depositing thin film, film-deposited glass substrate, and semi-conductor device 有权
标题翻译：用于连续沉积薄膜，薄膜沉积玻璃基板和半导体器件的方法和装置
公开(公告)号：JP2010065296A
公开(公告)日：2010-03-25
申请号：JP2008234238
申请日：2008-09-12
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： NAKAMURA TADAHIRO , TODA SADAYUKI , KOAIZAWA HISASHI
IPC分类号： C23C16/54 , H01L21/205 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus capable of continuously depositing various kinds of thin films on a substrate at high speed, and to provide a film-deposited glass substrate and a semi-conductor device. SOLUTION: A first feed port 131 for feeding first reactive gas 11 and a first exhaust port 135 for exhausting the first reactive gas are provided in a nucleus formation zone 115. A second feed port 132 for feeding second reactive gas 12 and a second exhaust port 136 for exhausting the second reactive gas are provided in a crystal growth zone 116. Favorable reactive gases of different kinds can be used for the first reactive gas 11 to be used for nucleus formation, and for the second reactive gas to be used for crystal growth. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在基板上高速连续沉积各种薄膜的方法和装置，并提供薄膜沉积玻璃基板和半导体装置。解决方案：用于供给第一反应气体11的第一进料口131和用于排出第一反应气体的第一排气口135设置在核形成区115中。用于供给第二反应气体12和第二反应气体12的第二进料口132 用于排出第二反应气体的第二排气口136设置在晶体生长区116中。不同种类的有利的反应气体可用于第一反应气体11用于核形成，并且对于第二反应气体使用用于晶体生长。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2008028231A Apparatus and method for forming semiconductor film and line body formed with semiconductor film 有权
标题翻译：用半导体膜形成半导体膜和线体的装置和方法
公开(公告)号：JP2008028231A
公开(公告)日：2008-02-07
申请号：JP2006200658
申请日：2006-07-24
申请人： Furukawa Electric Co Ltd:The , National Institute Of Advanced Industrial & Technology , 古河電気工業株式会社 , 独立行政法人産業技術総合研究所
发明人： KURASEKO HIROSHI , NAKAMURA TADAHIRO , TODA SADAYUKI , KOAIZAWA HISASHI , JIA HAIJUN , KONDO MICHIO
IPC分类号： H01L21/205 , C23C16/54 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor film forming apparatus and semiconductor film forming method capable of circumferentially and uniformly forming a semiconductor film on a line body, and to provide a line body formed with a semiconductor film. SOLUTION: The semiconductor film forming apparatus 1 comprises a reaction container 3 that has a cavity 3a therein in which high frequency for excitation supplied from outside resonates; a quartz tube 4 that is attached to the reaction container 3 in such a way that it passes through the inside of the cavity 3a and both ends thereof 4a, 4b project from the reaction container 3; and a plasma reaction unit 5 in the quartz tube 4 in which gas introduced into the quartz tube 4 is excited by the high frequency for excitation supplied in the cavity 3a, and a plasma P is generated. The line body 2 is disposed in the quartz tube 4 having the plasma reaction unit 5 in which the plasma is generated. Therefore, the semiconductor film is circumferentially and uniformly formed on the line body 2. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供能够在线体上周向均匀地形成半导体膜的半导体膜形成装置和半导体膜形成方法，并且提供形成有半导体膜的线体。解决方案：半导体膜形成装置1包括其中具有腔室3a的反应容器3，其中从外部供应的高频用于共振; 石英管4，其以使其通过空腔3a的内部并且其两端4a，4b从反应容器3突出的方式附接到反应容器3; 以及石英管4中的等离子体反应单元5，其中引入到石英管4中的气体被在腔3a中供给的高频用于激发，产生等离子体P. 线体2设置在具有产生等离子体的等离子体反应单元5的石英管4中。因此，半导体膜在线体2上周向均匀地形成。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007324063A Lighting system 有权
标题翻译：照明系统
公开(公告)号：JP2007324063A
公开(公告)日：2007-12-13
申请号：JP2006155298
申请日：2006-06-02
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： TODA SADAYUKI , KOAIZAWA HISASHI
IPC分类号： H05B33/06 , H01L51/50 , H05B33/04
摘要： PROBLEM TO BE SOLVED: To provide an organic LED lighting system element applicable to lighting systems of various sizes by solving technical problems of the lighting system including an organic LED element formed on a planar substrate. SOLUTION: The lighting system element includes a bottom emission type organic LED element having a transparent electrode such as an ITO, an organic EL layer, and a cathode electrode formed in this order on a substrate of transparent insulating material. The substrate is formed of a flat long body with an aspect ratio (a width/a thickness) of a cross sectional shape not less than 1.5, a thickness of not more than 400 μm, and a width of 0.6-50 mm. The organic LED element is formed on a main surface of the substrate, and extends to a longitudinal direction of the substrate. An electrode for conduction to the ITO transparent electrode extends to the longitudinal direction of the substrate on at least one side surface of the main surface of the substrate. The substrate, the organic LED element, and the electrode for conduction are coated by a transparent protective film, and terminals for conduction to the organic LED element are provided on both end parts of the substrate. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过解决包括形成在平面基板上的有机LED元件的照明系统的技术问题，提供适用于各种尺寸的照明系统的有机LED照明系统元件。解决方案：照明系统元件包括底部发射型有机LED元件，其具有在透明绝缘材料的基板上依次形成的透明电极，例如ITO，有机EL层和阴极电极。基板由平坦的长体形成，纵长比（宽/厚度）横截面形状不小于1.5，厚度不大于400μm，宽度为0.6-50mm。有机LED元件形成在基板的主表面上并且延伸到基板的纵向方向。用于导电到ITO透明电极的电极在衬底的主表面的至少一个侧表面上延伸到衬底的纵向方向。基板，有机LED元件和导电用电极被透明保护膜覆盖，并且在基板的两端部设置有机LED元件的导通端子。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2011222058A Glass substrate for magnetic disk 审中-公开
标题翻译：用于磁盘的玻璃基板
公开(公告)号：JP2011222058A
公开(公告)日：2011-11-04
申请号：JP2010086604
申请日：2010-04-02
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： NAKAMURA TADAHIRO , TODA SADAYUKI
IPC分类号： G11B5/73 , G11B5/84
摘要： PROBLEM TO BE SOLVED: To provide a glass substrate for magnetic disk with high impact resistance even if the center portion is perforated.SOLUTION: A glass substrate for magnetic disk has a bending strength within the range of 4800 N which is measured by a device for testing bending strength in which the diameter of the circle with which a first circular structure 11 of a lower jig 10 comes into contact is 21 mm, the diameter of the circle with which a second circular structure 12 of the lower jig 10 comes into contact is 36 mm and the diameter of the circle with which a third circular structure 21 of an upper jig 20 comes into contact is 28 mm.
摘要翻译：要解决的问题：即使中心部分被穿孔，也提供具有高抗冲击性的磁盘用玻璃基板。解决方案：用于磁盘的玻璃基板具有在4800N范围内的弯曲强度，该弯曲强度由用于测试弯曲强度的装置测量，其中下部夹具10的第一圆形结构11的圆的直径接触的是21mm，下夹具10的第二圆形结构12与其接触的圆的直径为36mm，上夹具20的第三圆形结构21的圆直径接触28毫米。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2007273366A Light emitting element 审中-公开
标题翻译：发光元件
公开(公告)号：JP2007273366A
公开(公告)日：2007-10-18
申请号：JP2006099454
申请日：2006-03-31
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： SHU IMEI , TODA SADAYUKI , KOAIZAWA HISASHI , HIRAYAMA TAKESHI
IPC分类号： H05B33/04 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide a light emitting element having excellent moisture resistance and strength.
SOLUTION: In the light emitting element including first and second electrodes layered to hold a light emitting layer therebetween on a substrate and a protective layer formed to cover around the electrode layers, the protective layer is seamlessly formed to cover around all of the substrate, the light emitting layer and the first and second electrode layers in the cross section of the light emitting element which is cut by at least one of a first plane perpendicular to the layering direction and a second plane perpendicular to the layering direction and the first plane.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有优异的耐湿性和强度的发光元件。解决方案：在包括在基板上层叠以保持发光层的第一和第二电极的发光元件和形成为覆盖电极层周围的保护层的情况下，保护层无缝地形成以覆盖所有的基板，发光层以及由垂直于分层方向的第一平面和与分层方向垂直的第二平面中的至少一个切割的发光元件的横截面中的第一和第二电极层，以及第一平面。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2007273365A Light emitting element 审中-公开
标题翻译：发光元件
公开(公告)号：JP2007273365A
公开(公告)日：2007-10-18
申请号：JP2006099453
申请日：2006-03-31
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： SHU IMEI , TODA SADAYUKI , KOAIZAWA HISASHI , HIRAYAMA TAKESHI
IPC分类号： H05B33/26 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide a light emitting element in which damage to a light emitting layer is reduced when forming an electrode layer on the light emitting layer.
SOLUTION: In the light emitting element including a first and a second electrode layers, and a light emitting layer held between the first and the second electrode layers on its both sides, the area of the surface of the second electrode layer on the side bordering on the light emitting layer is larger than that of the surface of the light emitting layer on the side bordering on the second electrode layer.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供在发光层上形成电极层时发光层的损伤减小的发光元件。解决方案：在包括第一和第二电极层的发光元件中，以及在其两侧保持在第一和第二电极层之间的发光层，第二电极层的表面的面积在与发光层相邻的一侧的边缘大于在与第二电极层相邻的一侧的发光层的表面的边。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2007264527A Method and apparatus for removing coating of wire shaped body by using plasma 有权
标题翻译：通过使用等离子体去除线形体的涂层的方法和装置
公开(公告)号：JP2007264527A
公开(公告)日：2007-10-11
申请号：JP2006092847
申请日：2006-03-30
申请人： Furukawa Electric Co Ltd:The , Univ Nagoya , 古河電気工業株式会社 , 国立大学法人名古屋大学
发明人： HIRAYAMA TAKESHI , SHU IMEI , TODA SADAYUKI , KOAIZAWA HISASHI , HORI MASARU
IPC分类号： G02B6/00
CPC分类号： H02G1/1275 , G02B6/245 , H02G1/1287
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for removing a coating of an optical fiber, at high speed by a dry process of an atmospheric pressure atmosphere, without greatly affecting the optical fiber. SOLUTION: The apparatus for removing a coating of a wire shaped body is equipped with: a non-equilibrium atmospheric pressure plasma source which is provided with a plasma forming gas, a micro wave and a micro gap and which is radical-controlled; a wire shaped body holder which holds the wire shaped body at a distance of 2-3 mm from an electrode generating a plasma flame; and a moving stage which relatively transfers the wire shaped body in the longitudinal direction. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过大气压气氛的干法高速除去光纤的方法和装置，而不会极大地影响光纤。解决方案：用于去除线状体的涂层的装置配备有：非平衡大气压等离子体源，其具有等离子体形成气体，微波和微小间隙，并且是由根基控制的 ; 线形体保持器，其将线状体保持在距离产生等离子体火焰的电极2-3mm的距离处; 以及在纵向上相对地转移线状体的移动台。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2013049629A Thin glass plate and method for producing the same 审中-公开
标题翻译：薄玻璃板及其制造方法
公开(公告)号：JP2013049629A
公开(公告)日：2013-03-14
申请号：JP2012269652
申请日：2012-12-10
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： NAKAMURA TADAHIRO , TODA SADAYUKI , KOAIZAWA HISASHI
IPC分类号： C03B23/037 , C03C17/32
CPC分类号： Y02P40/57
摘要： PROBLEM TO BE SOLVED: To provide a thin glass plate having high reliability to flexibility, and to provide a method for producing the same having high reliability to flexibility.SOLUTION: The thin glass plate has a main surface and a side surface, and the main surface and the side surface are coated with a protection film, and the average surface roughness of the side surface is ≤0.2 μm. The method for producing a thin glass plate includes a preparation step for preparing a preform glass plate whose cross section is a rectangle having prescribed width and thickness, a heating and drawing step for heating and softening the preform glass plate so as to be drawn into a strip-like thin glass plate whose cross section is a rectangle, and a step for forming a protection film on the thin glass plate.
摘要翻译：要解决的问题：提供一种对柔性具有高可靠性的薄玻璃板，并提供一种具有高柔性可靠性的制造方法。解决方案：薄玻璃板具有主表面和侧表面，并且主表面和侧表面涂覆有保护膜，并且侧表面的平均表面粗糙度≤0.2μm。薄玻璃板的制造方法包括：准备预定玻璃板的制造工序，该预成型玻璃板的截面为规定的宽度和厚度的矩形，加热和软化预制玻璃板的加热和拉伸步骤，以便被拉伸成横截面为矩形的条状薄玻璃板，以及在薄玻璃板上形成保护膜的工序。版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2009299164A Method and apparatus for forming continuous thin film, glass substrate with thin film, and semiconductor apparatus element 审中-公开
标题翻译：用于形成连续薄膜的方法和装置，具有薄膜的玻璃基板和半导体装置元件
公开(公告)号：JP2009299164A
公开(公告)日：2009-12-24
申请号：JP2008157067
申请日：2008-06-16
申请人： Furukawa Electric Co Ltd:The , 古河電気工業株式会社
发明人： NAKAMURA TADAHIRO , TODA SADAYUKI , KOAIZAWA HISASHI
IPC分类号： C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method for forming continuous thin films capable of continuously forming various kinds of thin films on a substrate, a forming apparatus, a glass substrate with the thin film, and a semiconductor device element.
SOLUTION: The thin belt-like substrate 10 of a range of ≥0.015 to ≤0.15 in db/(2(d+b)) consisting of a thickness d and width b in section is continuously introduced from an introducing port 114 into an isolation part 110, and a reaction gas 11 is pressurized and supplied from a supply port 116 thereto, and the substrate 10 and the reaction gas 11 are passed through the inside of the first isolation zone 111 to be rapidly heated up to the prescribed temperature and is further heated within the subsequent second isolation zone 112 to crack the reaction gas 11 on the substrate 10 and the reaction gas 11 is passed through the inside of the subsequent third isolation zone 113 so that the substrate 10 is rapidly cooled at a prescribed temperature gradient, and thereby the thin film consisting of the prescribed components of the reaction gas 11 is formed on the substrate 10.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在基板，成形装置，具有薄膜的玻璃基板和半导体器件元件上连续形成各种薄膜的连续薄膜的形成方法。解决方案：从导入口114连续引入由厚度d和截面宽度b组成的以db /（2（d + b））为单位的范围≥0.015至≤0.15的薄带状衬底10 进入隔离部110，将反应气体11从供给口116加压供给，将基板10和反应气体11通过第一隔离区域111的内部，迅速加热至规定的温度，并在随后的第二隔离区域112内进一步加热，以使基板10上的反应气体11裂解，反应气体11通过随后的第三隔离区域113的内部，使得基板10以规定的速度快速冷却温度梯度，由此在基板10上形成由反应气体11的规定成分构成的薄膜。（C）2010，JPO＆INPIT

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