专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2010027159A Method of manufacturing magnetic recording medium, magnetic recording medium, and information storage device 审中-公开
标题翻译：制造磁记录介质，磁记录介质和信息存储装置的方法
公开(公告)号：JP2010027159A
公开(公告)日：2010-02-04
申请号：JP2008188517
申请日：2008-07-22
申请人： Fujitsu Ltd , Ulvac Japan Ltd , 富士通株式会社 , 株式会社アルバック
发明人： SATO KENJI , TANAKA TSUTOMU , NISHIBASHI TSUTOMU , MORITA TADASHI , WATANABE KAZUHIRO
IPC分类号： G11B5/84 , G11B5/65 , G11B5/673 , G11B5/855 , H01F10/16 , H01F10/32 , H01F41/30
CPC分类号： G11B5/855 , B82Y25/00 , H01F1/009 , H01F10/3295
摘要： PROBLEM TO BE SOLVED: To provide a simple method of manufacturing a magnetic recording medium with high recording density. SOLUTION: The magnetic recording medium comprises: a substrate; a plurality of magnetic dots arranged on the substrate, each of which has an artificial lattice structure comprising a plurality of kinds of atom layers alternately laminated on the substrate, and in each of which information is magnetically recorded; and zones for separating the dots, which are arranged between the respective dots, have artificial lattice structures being continuous with the artificial lattice structures of the magnetic dots, are formed by ion injected into the artificial lattice structures, and have saturation magnetization lower than that of the magnetic dots. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造具有高记录密度的磁记录介质的简单方法。解决方案：磁记录介质包括：基板; 布置在基板上的多个磁点，每个磁点具有包括交替层叠在基板上的多种原子层的人造晶格结构，并且其中每一个磁信息被磁记录; 并且分布在各点之间的点的区域具有与磁点的人造晶格结构连续的人造晶格结构，通过注入到人造晶格结构中的离子形成，并且具有比磁点。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2012014747A Ion implantation device 审中-公开
标题翻译：离子植入装置
公开(公告)号：JP2012014747A
公开(公告)日：2012-01-19
申请号：JP2008282366
申请日：2008-10-31
申请人： Fujitsu Ltd , Ulvac Japan Ltd , 富士通株式会社 , 株式会社アルバック
发明人： NISHIBASHI TSUTOMU , WATANABE KAZUHIRO , MORITA TADASHI , SATO KENJI , TANAKA TSUTOMU , UZUMAKI TAKUYA
IPC分类号： G11B5/84
CPC分类号： G11B5/85 , H01J37/08 , H01J37/3171 , H01J2237/0822 , H01J2237/31701
摘要： PROBLEM TO BE SOLVED: To provide an ion implantation device capable of preventing a rapid rise of temperature inside a processing object.SOLUTION: A first ion irradiation device 53 is provided nearer to a feed-in port 60 of a vacuum chamber 51 than a second ion irradiation device 54, and a second ion irradiation device 54 is provided nearer to a feed-out port 61 of the vacuum chamber 51 than the first ion irradiation device 53, in such a manner that they are apart from each other. In addition, the ion irradiation ranges of a first and a second ion extraction electrodes 53b, 54b are arranged so that they do not overlap. Thus, during the time a first surface 30a of a processing object 30 is irradiated with ions and also during the time a second surface 30b is irradiated with ions after the first surface 30a has been irradiated with ions, the position on the back side which is exactly opposite to the position being irradiated with ions is not irradiated with ions, which makes the rise of temperature in the processing object 30b gentle. In addition, even though the temperature of one side rises due to irradiation of ions, the rise of temperature is moderated by radiation of heat from the other side, and a rapid temperature rise in the processed object 30 is prevented.
摘要翻译：要解决的问题：提供能够防止加工对象内的温度急剧上升的离子注入装置。解决方案：第一离子照射装置53设置为比第二离子照射装置54更靠近真空室51的馈入口60，并且第二离子照射装置54设置在更靠近送出端口 61相对于第一离子照射装置53的位置，使得它们彼此分开。此外，第一和第二离子提取电极53b，54b的离子照射范围被布置成它们不重叠。因此，在处理对象30的第一表面30a被离子照射之后，并且在第一表面30a被离子照射之后，在第二表面30b被离子照射的时间期间，背面的位置与被离子照射的位置完全相反的位置不会被离子照射，这使得处理对象物30b中的温度升高平缓。此外，即使一边的温度由于离子的照射而升高，因此来自另一侧的热量的放射使温度上升缓和，并且防止了被加工物30的快速升温。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2013145793A Plasma etching equipment 有权
标题翻译：等离子体蚀刻设备
公开(公告)号：JP2013145793A
公开(公告)日：2013-07-25
申请号：JP2012005183
申请日：2012-01-13
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： MORIGUCHI NAOKI , WATANABE KAZUHIRO , KAMIMURA RYUICHIRO
IPC分类号： H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide plasma etching equipment capable of enhancing uniformity of plasma density.SOLUTION: Plasma etching equipment includes an antenna group 20 including three or more high-frequency antennas concentrically arranged, and a high-frequency power supply RF2 for supplying high-frequency power to the antenna group. The antenna group 20 includes a plurality of forward-direction antennas 21 and 23 connected to the high-frequency power supply RF2 so that flowing directions of currents are the same, and a reverse-direction antenna 22 connected to the high-frequency power supply RF2 so that a direction of a current is reverse to those of the forward-direction antennas. The high-frequency antenna 21 adjacent to the reverse-direction antenna 22 outside the reverse-direction antenna 22 and the high-frequency antenna 23 adjacent to the reverse-direction antenna 22 inside the reverse-direction antenna 22 are the forward-direction antennas 21 and 23, respectively.
摘要翻译：要解决的问题：提供能够提高等离子体密度均匀性的等离子体蚀刻设备。解决方案：等离子体蚀刻设备包括一个包括三个或更多个同心排列的高频天线的天线组20和用于提供高电平的高频电源RF2 - 天线组的频率功率。天线组20包括连接到高频电源RF2的多个正向天线21和23，使得电流的流动方向相同，并且连接到高频电源RF2的反向天线22 使得电流的方向与前向天线的方向相反。与逆向天线22外侧的反方向天线22相邻的高频天线21和与反方向天线22内的反方向天线22相邻的高频天线23是前向天线21 和23。

4. 发明专利

JP2011003933A Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：JP2011003933A
公开(公告)日：2011-01-06
申请号：JP2010211830
申请日：2010-09-22
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： SATO MASAYUKI , AIHARA TSUTOMU , YAMAZAKI YOSHIFUMI , WATANABE KAZUHIRO
IPC分类号： H01L21/683 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus mounting a plurality of substrates on the electrostatic chuck without intervening a tray between the electrostatic chuck and the substrates.SOLUTION: This electrostatic chuck 10 includes a plurality of chuck regions 16 (16A-16E) on the upper surface of a chuck plate 13. The chuck regions 16 are formed on the upper surfaces of a plurality of island-like portions 17 formed to protrude from the upper surface of the chuck plate 13, respectively. Bipolar electrode layers 20a, 20b for adsorbing a substrate and outflow holes 18 for a substrate cooling gas are provided in the inside of each of the island-like portions 17, respectively. This configuration eliminates the necessity of operation for attaching a cover to the upper surface of a tray in which a plurality of substrates are placed to hold the substrates in the tray, and workability and productivity are improved. Cooling efficiency of substrates is also improved.
摘要翻译：要解决的问题：提供一种真空处理装置，其将多个基板安装在静电卡盘上，而不需要在静电卡盘和基板之间插入托盘。解决方案：该静电卡盘10包括多个卡盘区域16（16A-16E）卡盘区域16分别形成在从卡盘板13的上表面突出形成的多个岛状部分17的上表面上。用于吸附基板的双极电极层20a，20b和用于基板冷却气体的流出孔18分别设置在每个岛状部分17的内部。这种构造消除了将盖附接到托盘的上表面的操作的必要性，其中放置多个基板以将基板保持在托盘中，并且可提高可加工性和生产率。衬底的冷却效率也得到提高。

5. 发明专利

JP2010153003A Method for manufacturing magnetic storage medium, magnetic storage medium, and information storage device 有权
标题翻译：制造磁性储存介质，磁性储存介质和信息存储装置的方法
公开(公告)号：JP2010153003A
公开(公告)日：2010-07-08
申请号：JP2008332333
申请日：2008-12-26
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： SATO KENJI , TANAKA TSUTOMU , UZUMAKI TAKUYA , NISHIBASHI TSUTOMU , MORITA TADASHI , WATANABE KAZUHIRO
IPC分类号： G11B5/855 , G11B5/65 , G11B5/82
CPC分类号： G11B5/855
摘要： PROBLEM TO BE SOLVED: To provide a simple and practical method for manufacturing a magnetic storage medium of a bit-patterned type or the like, and to provide the magnetic storage medium of that type which can be manufactured by the simple and practical method and an information storage device. SOLUTION: The magnetic disk manufacturing method performs a film forming process (A) for forming a magnetic film 62 on a glass substrate 61 so that its Curie temperature may be 600 K or lower, and an ion implantation process (C) for locally implanting ion into the area of the magnetic film 62 other than a protection area. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造位图案型等的磁存储介质的简单实用的方法，并提供可以通过简单实用的方式制造的那种类型的磁存储介质方法和信息存储装置。解决方案：磁盘制造方法执行用于在玻璃基板61上形成磁性膜62的成膜工艺（A），使得其居里温度可以为600K或更低，以及用于局部地将离子注入除了保护区域之外的磁性膜62的区域中。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2010153002A Method for manufacturing magnetic storage medium, magnetic storage medium, and information storage device 有权
标题翻译：制造磁性储存介质，磁性储存介质和信息存储装置的方法
公开(公告)号：JP2010153002A
公开(公告)日：2010-07-08
申请号：JP2008332258
申请日：2008-12-26
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： SATO KENJI , TANAKA TSUTOMU , UZUMAKI TAKUYA , NISHIBASHI TSUTOMU , MORITA TADASHI , WATANABE KAZUHIRO
IPC分类号： G11B5/855 , G11B5/851
CPC分类号： G11B5/855 , G11B5/66
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a magnetic storage medium while suppressing a variation in a magnetization-inversion magnetic field while using an ion doping system, and to provide a magnetic storage medium manufactured by the method and an information storage device. SOLUTION: The method performs a disappearance degree measurement process (step S103) for measuring a saturated magnetization disappearance degree caused by ion implantation to a sample, an anisotropic magnetic field calculation process (Step S104) which calculates an anisotropic magnetic field of a magnetic film before the disappearance of saturated magnetization on the precondition that when the saturated magnetization locally disappears at the measured disappearance degree in an area other than a protection area, the magnetization-inversion magnetic field in the protection area becomes equal to a predetermined magnetization-inversion magnetic field, and a magnetic disk manufacturing process (step S108) which forms a magnetic film having the calculated anisotropic magnetic field and performs local ion implantation to the magnetic film to complete a bit-patterned magnetic disk. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种在使用离子掺杂系统的同时抑制磁化反转磁场的变化的同时制造磁存储介质的方法，并提供通过该方法和信息制造的磁存储介质储存设备。解决方案：该方法进行用于测量由离子注入到样品的饱和磁化消失程度的消失度测量处理（步骤S103），计算各向异性磁场的各向异性磁场计算处理（步骤S104）在饱和磁化消失之前的磁性膜的前提是当饱和磁化在除了保护区域之外的区域中测量的消失程度局部消失时，保护区域中的磁化反转磁场变为等于预定的磁化反转磁场和磁盘制造过程（步骤S108），其形成具有计算的各向异性磁场的磁性膜，并且对磁性膜执行局部离子注入以完成位图形磁盘。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2010092936A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2010092936A
公开(公告)日：2010-04-22
申请号：JP2008258865
申请日：2008-10-03
申请人： Ulvac Japan Ltd , Yamaguchi Univ , 国立大学法人山口大学 , 株式会社アルバック
发明人： TADATOMO KAZUYUKI , OKADA NARIHITO , MURATA TORU , WATANABE KAZUHIRO , CHANG HUANG-CHOUNG
IPC分类号： H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with high light extraction efficiency, less threading dislocation existing in a compound semiconductor layer, which grows on a sapphire substrate, and less anisotropy in an orientation characteristic. SOLUTION: A plurality of projections 2 are formed by random arrangement on the surface of the sapphire substrate 1, and a GaN layer 10 is made to grow on the surface. A multiple quantum well layer 12, a p-AlGaN layer 14, a p-GaN layer 16, and an ITO layer 18 are formed on the GaN layer 10. Two electrodes 21, 22 are also formed, so as to produce a semiconductor light emitting element. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有高光提取效率的半导体器件，存在于在蓝宝石衬底上生长的化合物半导体层中的较少的穿透位错以及取向特性较小的各向异性。解决方案：在蓝宝石衬底1的表面上通过随机布置形成多个突起2，并且使GaN层10在表面上生长。在GaN层10上形成多个量子阱层12，p-AlGaN层14，p-GaN层16和ITO层18，还形成两个电极21,22，以产生半导体光发光元件。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2010092515A Method for manufacturing magnetic storage medium, magnetic storage medium, and information storage device 有权
标题翻译：制造磁性储存介质，磁性储存介质和信息存储装置的方法
公开(公告)号：JP2010092515A
公开(公告)日：2010-04-22
申请号：JP2008258671
申请日：2008-10-03
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： SATO KENJI , TANAKA TSUTOMU , UZUMAKI TAKUYA , NISHIBASHI TSUTOMU , MORITA TADASHI , WATANABE KAZUHIRO
IPC分类号： G11B5/855 , G11B5/65 , G11B5/673 , G11B5/851
CPC分类号： G11B5/855
摘要： PROBLEM TO BE SOLVED: To manufacture a magnetic storage medium having a high recording density by a manufacturing method which does not impair productivity. SOLUTION: The magnetic storage medium 10 is manufactured by the manufacturing method having a magnetic film forming step wherein a magnetic film 62 is formed on a substrate 61, and an inter-dot separating step wherein a separating region 62d having saturated magnetization smaller than that of magnetic dots 62c is formed between the magnetic dots 62c by lowering saturated magnetization by locally implanting mixed ions of N 2 + and N + in another portions of the magnetic film 62 except a plurality of portions each to be the magnetic dot 62c in which information is magnetically recorded. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：通过不损害生产率的制造方法制造具有高记录密度的磁存储介质。解决方案：通过具有磁性膜形成步骤的制造方法制造磁性存储介质10，其中在基板61上形成磁性膜62，并且间隔点分离步骤，其中具有饱和磁化的分离区域62d较小通过局部地注入N＆lt; 2＆gt;＆lt; SP＆gt; +＆lt; / SP＆gt;和N＆lt; SP＆gt; +＆lt; / SP＆gt;的混合离子，通过降低饱和磁化强度，在磁点62c之间形成磁点62c。在除了多个部分之外的磁性膜62的另一部分中，每个部分是磁性记录信息的磁点62c。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2005150473A Microwave-excited plasma treatment apparatus 有权
标题翻译：微波激发等离子体处理设备
公开(公告)号：JP2005150473A
公开(公告)日：2005-06-09
申请号：JP2003387057
申请日：2003-11-17
申请人： Nihon Koshuha Co Ltd , Ulvac Japan Ltd , 日本高周波株式会社 , 株式会社アルバック
发明人： TAGUCHI YOJI , YOSHIDA MAIKO , KUSABA YASUTA , SHINOHARA KIBATSU , MATSUO MUNEKAZU , WATANABE KAZUHIRO
IPC分类号： H05H1/46 , H01J37/32 , H01L21/02 , H01L21/3065
CPC分类号： H01J37/32211 , H01J37/32192
摘要： PROBLEM TO BE SOLVED: To provide a microwave-excited plasma treatment apparatus wherein a range of pressure for normal discharge and a range of electric power for application are widened by shaping an aperture facing a rectangular waveguide into slits for homogenizing a microwave field and a magnetic field just below a microwave introduction window under a microwave antenna. SOLUTION: In this microwave-excited plasma treatment apparatus, the rectangular waveguide is provided in contact with a microwave introducing window on an upper wall of a vacuum chamber. Four elliptical slits are opened in the plane wherein the rectangular waveguide is in contact with the microwave introducing window, and are arranged in an approximately regular tetragon with each slit constituting a side of the square. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种微波激发等离子体处理装置，其中通过将面向矩形波导的孔成形为用于使微波场均匀化的狭缝来扩大正常放电的压力范围和用于施加的电力的范围以及微波天线下的微波引入窗口正下方的磁场。解决方案：在这种微波激发等离子体处理装置中，矩形波导设置成与真空室的上壁上的微波引入窗口接触。四个椭圆形狭缝在矩形波导与微波导入窗口接触的平面中打开，并且布置成大致正四边形，每个狭缝构成正方形的一侧。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2010123178A Manufacturing method of magnetic storage medium, magnetic storage medium, and information storage device 有权
标题翻译：磁存储介质，磁存储介质和信息存储设备的制造方法
公开(公告)号：JP2010123178A
公开(公告)日：2010-06-03
申请号：JP2008295483
申请日：2008-11-19
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： SATO KENJI , TANAKA TSUTOMU , UZUMAKI TAKUYA , NISHIBASHI TSUTOMU , MORITA TADASHI , WATANABE KAZUHIRO
IPC分类号： G11B5/855
CPC分类号： G11B5/855
摘要： PROBLEM TO BE SOLVED: To provide a simple manufacturing method capable of manufacturing a magnetic storage medium, to provide the magnetic storage medium which can be manufactured by the simple manufacturing method, and to provide an information storage device. SOLUTION: The manufacturing method of the magnetic storage medium includes: a film-depositing step (A) for forming a magnetic film 62 of a layered structure by layering a granular layer 62a having a granular structure wherein a plurality of magnetic particles comprising a magnetic material are mutually separated by a non-magnetic material and a soft magnetic layer 62b comprising a soft magnetic material in the order of the granular layer 62a and the soft magnetic layer 62b from a substrate 61 side; and an ion implanting step (C) for implanting ions in the magnetic film 62 by aiming the depth of the soft magnetic layer 62b from the side opposite to the substrate 61 in the thickness direction of the magnetic film 62 and locally implanting ions in a region except a prescribed protection region in the spreading direction of the magnetic film 62. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够制造磁性存储介质的简单制造方法，以提供可以通过简单的制造方法制造的磁性存储介质，并提供信息存储装置。解决方案：磁性存储介质的制造方法包括：通过层叠具有粒状结构的粒状层62a形成层状结构的磁性膜62的成膜步骤（A），其中多个磁性粒子包括磁性材料通过非磁性材料和从基板61侧以粒状层62a和软磁性层62b的顺序包含软磁性材料的软磁性层62b相互分离; 以及离子注入步骤（C），用于通过使磁性膜62的厚度方向上的与基板61相对的一侧的深度对准软磁性层62b的深度，并将离子局部地注入到区域除了在磁性膜62的扩展方向上的规定的保护区域外。版权所有（C）2010，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式