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    • 1. 发明专利
    • Regulating system
    • 调节系统
    • JPS5758453A
    • 1982-04-08
    • JP13286180
    • 1980-09-26
    • Fujitsu LtdHitachi LtdNec CorpNippon Telegr & Teleph Corp Oki Electric Ind Co Ltd
    • YAMAMOTO YUUSUKEKIN KATSUYOSHIMANABE SHIROUSUGI KUNITOSHISEIKE KENJI
    • H04M3/22H04M3/36H04Q3/545
    • H04M3/365
    • PURPOSE:To achieve a multiprocessor electronic exchange system which can perform economical, suitable confusing restriction, by providing a function to detect the remaining state of processed request in a communication device connected between an input and output processor and a call processor. CONSTITUTION:Processing request from input/output processors 2o-2i is sequentially stored in a storage circuit 31 in a communication device 30 to advance a count circuit 32. The stored processing request is transmitted to a call processor 40 sequentially and a count circuit 32 is subtracted by the transmission. If many processing requests come and the capability of the call processor 40 is exceeded, the index of the count circuit 32 is gradually increased. A discrimination circuit 33 sets a restriction display flip-flop, when the index of the circuit 32 reaches a prescribed number, and sets a restriction display flip-flop 34 and transmits a restriction signal to the processors 2o-2i to start the restricting operation of the line to an inputted load.
    • 目的:通过提供在连接在输入和输出处理器与呼叫处理器之间的通信设备中检测已处理请求的剩余状态的功能,实现可以执行经济,合适的混淆限制的多处理器电子交换系统。 构成:来自输入/输出处理器2o-2i的处理请求被顺序地存储在通信设备30中的存储电路31中,以使计数电路32前进。所存储的处理请求被顺序发送到呼叫处理器40,并且计数电路32是 通过传输减去。 如果许多处理请求到来并且呼叫处理器40的能力被超过,则计数电路32的索引逐渐增加。 鉴别电路33设置限制显示触发器,当电路32的索引达到规定数量时,设置限制显示触发器34,并向处理器2o-2i发送限制信号以开始限制操作 到输入负载的行。
    • 5. 发明专利
    • CHIP SELECTOR OF SEMICONDUCTOR LIGHT EMITTING ELEMENT
    • JPS5491193A
    • 1979-07-19
    • JP16069777
    • 1977-12-28
    • FUJITSU LTD
    • HONMA HITOSHIKIN KATSUYOSHI
    • H01L21/66
    • PURPOSE:To reduce a measurement error by making the supply terminal of a chip selector, which is constituted by a chip support stand, a driving current supply terminal and a photo detector, into a cylindrical shape and inserting opticla fiber at the center of the supply terminal to lead the light from a light emitting device to the photo detector. CONSTITUTION:Pole brace 9 provided with photo detector 6 at the tip is stood on chip support stand 1, and chip 2 to be selected is put on support stand 1 while positioning chip 2 at the center of photo detector 6. Next, electrode 4 having an aperture at the center and cylindrical driving current supply terminal 3 are piled up on this chip, and a DC power source is connected between support stand 1 and terminal 3. In this constitution, optical fiber 10 is inserted into terminal 3, and the top of fiber 10 is brought into contact with photo detector 6, thereby detecting the light, which is generated by flowing the current to chip 2, through optical fiber 10 by photo detector 6. As a result, light 8 which is generated from the side face of chip 2 is prevented from entering photo detector 6, and the irregularity of measured values is avoided.
    • 6. 发明专利
    • SEMICONDUCTOR LIGHT-EMITTING DEVICE
    • JPS57111076A
    • 1982-07-10
    • JP18687380
    • 1980-12-26
    • FUJITSU LTD
    • YAMAGOSHI SHIGENOBUTAKEUCHI YASUOKIN KATSUYOSHI
    • H01L33/14H01L33/30H01L33/38H01L33/40
    • PURPOSE:To enable to efficiently pick out a beam of light by a method wherein an ordinary low resistance electrodes are arranged in a small island type in a light emitting section, and these electrodes are electrically connected using a transparent electrode. CONSTITUTION:A light-emitting section 9 is formed by selectively diffusing Zn on an N-GaAs 2, an N-GaAlAs layer 3 and a grown wafer on an N-GaAs substrate 1. An insulating SiO2 film 6 is provided on the outer part from the circumference of the light-emitting part 9, and then, as a P-electrode (Au/Zn/ Au), the inside of the light-emitting part is formed into a small island type and the SiO2 film is formed into the size which can be used as a bonding pad. Then, a transparent electrode 11 is attached in order to electrically connect the island- type electrode 10 and the bonding pad section 10' located on the circumference of the light-emitting part. As the part consisted of the transparent electrode 11 and a crystal 5 has a high resistance, current runs mainly through the small and island type electrode 10, and the light can be picked out through the transparent electrode.
    • 7. 发明专利
    • Manufacture of semiconductor light emitting device
    • 半导体发光器件的制造
    • JPS5728373A
    • 1982-02-16
    • JP10303580
    • 1980-07-29
    • Fujitsu Ltd
    • ABE MASAYUKIWADA OSAMUISHIYAMA TAKEOKIN KATSUYOSHI
    • H01L33/30H01L33/40
    • H01L33/40H01L33/145
    • PURPOSE:To uniformalize light emitting, and to improve light emitting efficiency by a method wherein a P electrode is formed on a semiconductor substrate with a NP junction, the whole surface containing the electrode is coated with an insulating film, a metallic film having excellent adhesive property with a gold plating layer is shaped on the film, a hole is made and the P electrode is exposed and the electrode and the insulating film are coated with a gold plating layer. CONSTITUTION:When the P electrode 24 and N electrode 23 are attached to the semiconductor light emitting device 20 in which the PN junction is formed by an N type window layer 21 and a P type light confining layer 22, the fitting is conducted as follows. That is, the P electrode 24 is shaped on the back of the layer 22, the whole surface containing the electrode is coated with the insulating film 25, the insulating film is coated with the Cr film 26 having excellent adhesive property with the gold plating layer, the opening is bored corresponding to the P electrode 24, and the Au plating layer 27 contacting with the P electrode 24 is coated being extended on the film 26. The electrodes 23 are attached around the layer 21. Accordingly, Cr in the film 26 does not intrude to the P electrode 24 consisting of Ga-Al-As-Au- Zn, and uneven light emitting can be prevented.
    • 目的:为了使发光均匀化,并且通过其中在NP结的半导体衬底上形成P电极的方法来提高发光效率,包含电极的整个表面涂覆有绝缘膜,具有优异粘合剂的金属膜 具有镀金层的特性在膜上成形,形成孔,并且P电极暴露,并且电极和绝缘膜涂覆有镀金层。 构成:当P电极24和N电极23附接到由N型窗口层21和P型光限制层22形成PN结的半导体发光器件20时,如下进行接合。 也就是说,P电极24形成在层22的背面,包含电极的整个表面涂覆有绝缘膜25,绝缘膜涂覆有与镀金层具有优异粘附性的Cr膜26 ,对应于P电极24的开口是凹陷的,并且与P电极24接触的Au镀层27被涂覆在膜26上。电极23被附着在层21周围。因此,膜26中的Cr 不会侵入由Ga-Al-As-Au-Zn构成的P电极24,能够防止发光不均匀。
    • 8. 发明专利
    • MANUFACTURE OF SEMICONDUCTOR DEVICE
    • JPS5618420A
    • 1981-02-21
    • JP9341779
    • 1979-07-23
    • FUJITSU LTD
    • WADA OSAMUKIN KATSUYOSHI
    • H01L21/027G03F7/095G03F7/26H01L21/28H01L21/306
    • PURPOSE:To make it possible to form electrodes with a precise pattern by forming a thick positive type photoresist film and a negative type photoresist film with an ordinary thickness on a semiconductor substrate having a convex portion. CONSTITUTION:The thick positive type photoresist film 2 is formed on the semiconductor substrate 1 having convex portion 1' on its surface. The negative type photoresist film 3 with an ordinary thickness is formed on said film 2. Then, an electrode pattern is exposed on the negative type photoresist film 3 by using a photomask, and an opening 3' corresponding to the electrode pattern is formed on the resist film 3 by the development. Thereafter, exposure is made by using the photomask whose size of the pattern is the same as that of the mask that is used before and black-and-white pattern is reversed, and an opening 2' of the electrode pattern is formed by the development. After the electrode metal is evaporated, the positive type photoresist is resolved. In this method, since the positive type photoresist is thickly formed and the surface is smoothed, a highly precise pattern can be formed.