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1. 发明专利

JP2011035046A Sheet-like structure, and method of manufacturing the same 审中-公开
标题翻译：类似结构及其制造方法
公开(公告)号：JP2011035046A
公开(公告)日：2011-02-17
申请号：JP2009177714
申请日：2009-07-30
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KONDO DAIYU , YAMAGUCHI YOSHITAKA , IWAI DAISUKE , SOGA IKUO , SAKIDA YUKIE , HIROSE SHINICHI , YAGISHITA YOHEI , NORIMATSU MASAAKI
IPC分类号： H05K7/20 , B32B9/00 , B82B1/00 , B82B3/00 , C08K3/04 , C08L101/00 , H01L23/373
摘要： PROBLEM TO BE SOLVED: To provide a sheet-like structure using a linear structure of the carbon element, and extremely high in thermal conductivity and electric conductivity.
SOLUTION: This sheet-like structure includes: a plurality of linear structures 16 formed of the carbon element, and including linear structure groups 16a and linear structure groups 16b formed adjacently to the linear structure groups 16a and each having a length different from that of the linear structure group 16a; and a filling layer 20 formed among the plurality of linear structures 16.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供使用碳元素的线性结构的片状结构，并且导热性和导电性极高。解决方案：该片状结构包括：由碳元素形成的多个直线结构16，并且包括与线性结构组16a相邻形成的线性结构组16a和直线结构组16b，每个直线结构组16a的长度不同于线性结构组16a的; 以及形成在多个线性结构16之间的填充层20.版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2010199367A Heat radiating material and method for manufacturing the same, and electronic device and method for manufacturing the same 有权
标题翻译：热辐射材料及其制造方法以及电子设备及其制造方法
公开(公告)号：JP2010199367A
公开(公告)日：2010-09-09
申请号：JP2009043622
申请日：2009-02-26
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HIROSE SHINICHI , IWAI DAISUKE , YAMAGUCHI YOSHITAKA , KONDO DAIYU , SOGA IKUO , SAKIDA YUKIE , YAGISHITA YOHEI
IPC分类号： H01L23/373 , H01L23/36 , H05K7/20
摘要： PROBLEM TO BE SOLVED: To provide: a heat radiating material extremely high in thermal conductivity and electric conductivity using a linear structure of a carbon element; an electronic device of high performance using such a heat radiating material; and a method for manufacturing the electronic device. SOLUTION: The heat radiating material has: a plurality of linear structures 12 of the carbon element; a support layer 14a formed between the plurality of linear structures 12 to support the plurality of linear structures 12; and low melting point material layers 14b, 14c formed on at least one surface of the support layer 14a and made of material lower in melting point than the material of the support layer 14a. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供：使用碳元素的线性结构的导热性和导电性极高的散热材料; 使用这种散热材料的高性能电子设备; 以及电子设备的制造方法。解决方案：散热材料具有：碳元素的多个直线结构12; 形成在多个线状构件12之间以支撑多个线性结构12的支撑层14a; 以及形成在支撑层14a的至少一个表面上并由熔点低于支撑层14a的材料的材料制成的低熔点材料层14b，14c。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2010118609A Heat radiation material, electronic device, and method of manufacturing electronic device 有权
标题翻译：热辐射材料，电子器件及制造电子器件的方法
公开(公告)号：JP2010118609A
公开(公告)日：2010-05-27
申请号：JP2008292320
申请日：2008-11-14
申请人： Fujitsu Ltd , 富士通株式会社
发明人： YAMAGUCHI YOSHITAKA , IWAI DAISUKE , HIROSE SHINICHI , KONDO DAIYU , SOGA IKUO , YAGISHITA YOHEI , SAKIDA YUKIE
IPC分类号： H01L23/373
CPC分类号： H01L23/433 , H01L23/373 , H01L23/3733 , H01L24/28 , H01L24/31 , H01L2224/16225 , H01L2224/29499 , H01L2224/73253 , H01L2224/83365 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/10158 , H01L2924/15788 , H01L2924/16152 , Y10S977/734 , Y10S977/739 , Y10S977/742 , Y10T29/49002 , Y10T428/30 , Y10T428/31504 , H01L2924/00 , H01L2224/0401
摘要： PROBLEM TO BE SOLVED: To provide a heat radiation material of very high thermal conductivity and electric conductivity using linear structures of carbon atoms, and an electronic device of high performance using the heat radiation material or the like and a method of manufacturing the electronic device. SOLUTION: The heat radiation material includes: a plurality of linear structures 12 of carbon atoms; and a filling layer 14 formed of a thermoplastic resin and disposed between the plurality of linear structures 12. The heat radiation material further includes a coating film formed on at least one ends of the plurality of linear structures 12 and of a material having a higher thermal conductivity than that of the thermoplastic resin. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：使用碳原子的线性结构和使用散热材料等的高性能的电子器件来提供具有非常高的导热性和导电性的热辐射材料，以及制造电子设备。解决方案：散热材料包括：多个碳原子的线性结构12; 以及由热塑性树脂形成并设置在多个线状结构12之间的填充层14.散热材料还包括形成在多个线性结构12的至少一个端部上的涂膜和具有较高热量的材料电导率高于热塑性树脂。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2008251963A Device structure by carbon nanotube metal composite material 有权
标题翻译：碳纳米管金属复合材料的器件结构
公开(公告)号：JP2008251963A
公开(公告)日：2008-10-16
申请号：JP2007093538
申请日：2007-03-30
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KONDO DAIYU , IWAI DAISUKE
IPC分类号： H01L21/60
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To make a metal bump structure conveniently by plating by utilizing a bundle of carbon nanotubes in the mold (framework) of bump structure. SOLUTION: A complex structure consists of an aggregate of carbon-based fibers composed of a plurality of carbon-based fibers and a metal wherein the aggregate of carbon-based fibers is covered with the metal. The clearance between the adjoining aggregates of carbon-based fibers is filled with that metal. The aggregate of carbon-based fibers has a hollow portion internally in the length direction and the hollow portion is filled with that metal. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过在凸块结构的模具（框架）中利用一束碳纳米管通过电镀方便地制造金属凸块结构。解决方案：复合结构由由多个碳基纤维和金属组成的碳基纤维的聚集体组成，其中碳基纤维的聚集体被金属覆盖。碳基纤维的邻接聚集体之间的间隙用该金属填充。碳基纤维的聚集体在长度方向上具有内部的中空部分，并且中空部分填充有该金属。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2006255867A Carbon nanotube device and manufacturing method thereof 有权
标题翻译：碳纳米管装置及其制造方法
公开(公告)号：JP2006255867A
公开(公告)日：2006-09-28
申请号：JP2005080519
申请日：2005-03-18
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KAWABATA AKIO , NIHEI MIZUHISA , KONDO DAIYU , SATO SHINTARO
IPC分类号： B82B1/00 , B82B3/00 , C01B31/02 , H01L29/06
CPC分类号： D01F9/12 , B82Y30/00 , H01L21/76838 , H01L21/76876 , H01L21/76879 , H01L2221/1094
摘要： PROBLEM TO BE SOLVED: To provide a carbon nanotube device, having high degree of freedom in shape of a carbon nanotube, and a manufacturing method thereof. SOLUTION: After an opening part 13 is formed, a resist film is formed on the whole surface, and subjected to patterning, thereby forming a resist pattern. The resist pattern is shaped biased to cover the bottom of the opening part 13. As a result, an Si substrate 11 is exposed from only a part of the opening part 13. Subsequently, with the resist pattern as a mask, a catalyst layer 14 is formed at the bottom of the opening part 13. Subsequently, the resist pattern is removed. At this time, since the catalyst layer 14 is biased in the opening part 13, biased van der Waals force is applied to the carbon nanotube 15 in the growth process from the horizontal direction. Therefore, the carbon nanotube 15 is attracted to the side of an SiO 2 film 12 near it and caused to grow with a gradient. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决问题的方法：提供碳纳米管形状自由度高的碳纳米管装置及其制造方法。解决方案：在形成开口部13之后，在整个表面上形成抗蚀剂膜，并进行图案化，从而形成抗蚀剂图案。抗蚀剂图案被成形为偏压以覆盖开口部13的底部。结果，Si基板11仅从开口部13的一部分露出。随后，以抗蚀剂图案作为掩模，将催化剂层14 形成在开口部13的底部。接着，除去抗蚀剂图案。此时，由于催化剂层14偏压在开口部13中，所以在生长过程中从水平方向向碳纳米管15施加偏置的范德华力。因此，碳纳米管15被吸附到靠近SiO 2的SiO 2侧，并以梯度生长。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2006112819A Gas detection device 有权
标题翻译：气体检测装置
公开(公告)号：JP2006112819A
公开(公告)日：2006-04-27
申请号：JP2004297710
申请日：2004-10-12
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KONDO DAIYU , AWANO YUJI
IPC分类号： G01N27/12 , G01N27/04
CPC分类号： B82Y15/00
摘要： PROBLEM TO BE SOLVED: To stably acquire very high sensitivity, without depending on sensing ability of CNT itself, and to enable selective sensing to specific gas molecules.
SOLUTION: A CNT bundle 3 is constituted by aligning CNT's 11, respectively in parallel so as to bridge parallel plate electrodes 1, 2. Many fullerene molecules 12 are filled inside each CNT 11, and a plurality of apertures 13 for allowing gas molecules 10, which are objects of detection to penetrate into the CNTs 11, are formed on the side wall of the CNTs 11.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：稳定地获得非常高的灵敏度，而不依赖于CNT本身的感测能力，并且能够选择性地感测特定的气体分子。解决方案：CNT束3通过将CNT11平行排列成平行的方式构成，以平行平行的平板电极1,2构成。许多富勒烯分子12填充在每个CNT11内部，并且多个孔13用于允许气体作为CNTs 11的检测对象的分子10形成在CNT11的侧壁上。（C）2006，JPO＆NCIPI

7. 发明专利

JP2013145904A Method of manufacturing field-effect transistor 有权
标题翻译：制造场效应晶体管的方法
公开(公告)号：JP2013145904A
公开(公告)日：2013-07-25
申请号：JP2013041991
申请日：2013-03-04
申请人： Fujitsu Ltd , 富士通株式会社
发明人： IWAI DAISUKE , KONDO DAIYU
IPC分类号： H01L29/786 , H01L21/336
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a field-effect transistor capable of simplifying a process for manufacturing a transistor whose ratio of a parasitic capacitance to an intrinsic capacitance is reduced without increase in a device area, and of reducing man hours.SOLUTION: By utilizing the catalyst structure dependence of electrical characteristics of a carbon nano-tube to be grown, a carbon nano-tube to be a channel having a semiconductive property and a carbon nano-tube to be a gate electrode having a metallic property are simultaneously grown.
摘要翻译：要解决的问题：提供一种制造场效应晶体管的方法，该场效应晶体管能够简化制造晶体管的工艺，其晶体管的寄生电容与本征电容的比率降低而不增加器件面积，并减少工时。解决方案：通过利用催化剂结构对待生长的碳纳米管的电特性的依赖性，作为具有半导体性质的通道的碳纳米管和作为具有金属性质的栅电极的碳纳米管，同时成长。

8. 发明专利

JP2013012611A Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2013012611A
公开(公告)日：2013-01-17
申请号：JP2011144799
申请日：2011-06-29
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KONDO DAIYU , IWAI DAISUKE
IPC分类号： H01L29/786 , H01L21/28 , H01L21/336 , H01L29/161 , H01L29/41 , H01L29/417 , H01L33/30 , H01L33/42
摘要： PROBLEM TO BE SOLVED: To achieve a high voltage device, an ultraviolet emission/reception device with taking advantage of characteristics of graphene.SOLUTION: A semiconductor device comprises graphene electrodes 2, 3 of a two-dimensional structure, and a boron nitride semiconductor layer 5 of a two-dimensional structure connected to graphene ends of the graphene electrodes.
摘要翻译：要解决的问题：利用石墨烯的特性实现高电压装置，紫外发射/接收装置。解决方案：半导体器件包括二维结构的石墨烯电极2,3和与石墨烯电极的石墨烯端部连接的二维结构的氮化硼半导体层5。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2011096832A Sheet type member and electronic apparatus 有权
标题翻译：表格类型和电子设备
公开(公告)号：JP2011096832A
公开(公告)日：2011-05-12
申请号：JP2009248985
申请日：2009-10-29
申请人： Fujitsu Ltd , 富士通株式会社
发明人： HIROSE SHINICHI , IWAI DAISUKE , YAMAGUCHI YOSHITAKA , KONDO DAIYU , SOGA IKUO , SAKIDA YUKIE , YAGISHITA YOHEI
IPC分类号： H01L23/373 , B82B1/00 , B82B3/00 , C01B31/02 , H05K7/20
摘要： PROBLEM TO BE SOLVED: To provide a sheet type member capable of conducting heat from a heating body to a heat dissipation body with high efficiency, and to provide an electronic apparatus. SOLUTION: As an embodiment of the sheet type member, a packed layer 4 and a plurality of first carbon nanotubes 2 extending from the inside of the packed layer 4 toward a first principal surface are provided. Further, a plurality of second carbon nanotubes 3, which are dispersed between ends of the plurality of first carbon nanotubes 2 on the side of a second principal surface of the packed layer 4 and the second principal surface, are provided. COPYRIGHT: (C)2011,JPO&INPIT

10. 发明专利

JP2010147237A Method of manufacturing wiring structure, and wiring structure 有权
标题翻译：制造接线结构和接线结构的方法
公开(公告)号：JP2010147237A
公开(公告)日：2010-07-01
申请号：JP2008322660
申请日：2008-12-18
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KONDO DAIYU , SATO SHINTARO
IPC分类号： H01L21/768 , C01B31/02 , C23C16/26 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To solve a problem of difficulty in forming a catalyst film that has a flat and minute surface on its sidewall so as to grow a carbon nanotube in a lateral direction (a direction parallel to the surface of a substrate).
SOLUTION: A first thickness of catalytic layer for longitudinal wiring is formed in two longitudinal wiring areas 23 separated from each other on a substrate surface and, a second thickness of catalytic layer for lateral wiring is formed on a lateral wiring area continuous from one longitudinal wiring area to the other longitudinal wiring area, with the second thickness set larger than the first thickness. A structure containing carbon is vapor deposited on the catalytic layer for longitudinal wiring and the catalytic layer for lateral wiring. The first and second thicknesses are set so that, in the initial stage of vapor deposition, graphite grows on the catalytic layer for longitudinal wiring and the catalytic layer for lateral wiring, then, carbon nanotubes grow between the graphite on the longitudinal wiring areas and the substrate, and thereby, the graphite on the lateral wiring area is held in a space by the carbon nanotubes grown on the longitudinal wiring areas.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决难点的问题为了解决难以形成在其侧壁上具有平坦和微小表面的催化剂膜的问题，以便在横向方向（平行于基板的表面的方向上）生长碳纳米管）。解决方案：用于纵向布线的催化剂层的第一厚度形成在基板表面上彼此分离的两个纵向布线区域23中，并且用于横向布线的第二厚度的催化剂层形成在横向布线区域一个纵向布线区域到另一个纵向布线区域，第二厚度设定为大于第一厚度。包含碳的结构气相沉积在用于纵向配线的催化剂层和用于横向配线的催化剂层上。第一厚度和第二厚度被设定为使得在气相淀积的初始阶段，在用于纵向配线的催化剂层和用于横向配线的催化剂层上生长石墨，然后碳纳米管在纵向配线区域上的石墨和衬底，从而通过在纵向布线区域上生长的碳纳米管将横向布线区域上的石墨保持在空间中。版权所有（C）2010，JPO＆INPIT

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