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    • 2. 发明专利
    • CONCENTRATION CONTROL SYSTEM FOR CARBON DIOXIDE GAS
    • JPS60178516A
    • 1985-09-12
    • JP3408284
    • 1984-02-24
    • FUJITSU LTD
    • HAYAKAWA MASAHIRO
    • F24F11/02G05D21/00G05D21/02
    • PURPOSE:To shorten a thickness improvement time and to save energy by controlling an external air dumper so that the intake amount of external air is increased or decreased when the concentration of carbon dioxide gas is controlled. CONSTITUTION:A controller 11 for carbon dioxide gas concentration control consists of analog input/output parts 13 and 14, a microprocessor 19, etc., and measured values of a carbon dioxide gas concentration sensor 5 and an external air speed sensor 12 are stored in RAM17. A program in ROM18 is executed by a microprocessor 19 to control opening extents of the external air dumper 2, a discharge dumper 3, and a forced circulation dumper 4. Namely, the requested amount of external air during current control is calculated from measured value from both sensors 5 and 12 to calculate the opening extent of the external air dumper 2, which is controlled through a D/A conversion part 16 and an analog output part 14. Further, the opening extents of the discharge dumper 3 and forced circulation dumper 4 are controlled by the controller 11 at specific intervals of time to introduce an optimum amount of external air.
    • 3. 发明专利
    • Thermal resistance measurement of semiconductor device
    • 半导体器件的热电阻测量
    • JPS59108968A
    • 1984-06-23
    • JP21896482
    • 1982-12-14
    • Fujitsu Ltd
    • MATSUMOTO KAZUHIROHAYAKAWA MASAHIROHIRANO YUTAKA
    • G01R31/26H01L21/66
    • PURPOSE: To provide a thermal resistance measurement of a semiconductor device which can be implemented even while the semiconductor device is in operation by incorporating a process of dividing a temperature rising value by a power consumption when the semiconductor device is used continuously.
      CONSTITUTION: At the step 1, a gain is measured by changing the channel temperature with varying of the source/drain voltage VD or the gate voltage VG of a semiconductor device to be measured to determine a gain vs temperature characteristic l. At the step 2, the gate voltage VG and a high frequency input RFIN are applied continuously with the source-drain voltage VD of an FET transistor 41 maintained at a fixed value to determine the current gain GI and the power consumption PDC. At the step 3, the source-drain voltage VD, the gate voltage VG and the high frequency input RFIN the same as at the step 2 are applied in a pulse to determine the current gain G
      2 . At the step 4, the difference ΔG is determined between the gains in the two cases at the step 3. At the step 5, the gain vs temperature characteristic l at the step 1 is used to determine a temperature rising value ΔT corresponding to ΔG at the step 4. At the step 6, a thermal resistance R is determined from ΔT and PDC.
      COPYRIGHT: (C)1984,JPO&Japio
    • 目的:提供半导体器件的热电阻测量,即使在半导体器件工作时,也可以通过在连续使用半导体器件的同时并入升温值除以功耗的工序来实现。 构成:在步骤1中,通过改变要测量的半导体器件的源极/漏极电压VD或栅极电压VG来改变通道温度来测量增益,以确定增益对温度特性l来测量增益。 在步骤2中,栅极电压VG和高频输入RFIN连续施加,FET晶体管41的源极 - 漏极电压VD维持在固定值,以确定电流增益GI和功耗PDC。 在步骤3中,将源极 - 漏极电压VD,栅极电压VG和与步骤2相同的高频输入RFIN施加在脉冲中以确定电流增益G2。 在步骤4中,在步骤3中在两种情况下的增益之间确定差值DELTAG。在步骤5中,步骤1的增益对温度特性1用于确定对应于DELTAG的升温值DELTAT 在步骤6中,从DELTAT和PDC确定热电阻R.
    • 4. 发明专利
    • EQUIPMENT OPERATION MANAGEMENT DEVICE
    • JPH0863224A
    • 1996-03-08
    • JP19577394
    • 1994-08-19
    • FUJITSU LTD
    • HAYAKAWA MASAHIRO
    • G06F1/00G05B23/02G06Q50/00G06Q50/16G06F17/60
    • PURPOSE: To improve the safety of operation by prescribing operation contents according to the operation qualification of an operator, monitoring that each operation by the recognized operator has prescribed contents, and restricting the operation. CONSTITUTION: An operation mode setting means 14 sets operation contents, prescribed as the operation qualification of the operator put in charge of operation, as an operation mode. Then an operator recognizing means 13 confirm and recognizes the operator, and the operation mode setting means 14 prescribes and sets the operation contents according to the qualification of the recognized operator. Each time operation is done by the operator, an operation monitoring and restricting means 15 monitors the operation contents by comparing them with the operation contents prescribed by the operation mode and restricts unprescribed operation so that it is ineffective. Consequently, operation by an operator which is less experienced is restricted so that important operation can not be done, thereby preventing a device from being misoperated.
    • 5. 发明专利
    • Feedback type amplifying circuit
    • 反馈型放大电路
    • JPS59174007A
    • 1984-10-02
    • JP4825583
    • 1983-03-23
    • Fujitsu Ltd
    • HAYAKAWA MASAHIRO
    • H03F3/60H03F1/30
    • H03F1/306
    • PURPOSE:To obtain a feedback type amplifying circuit having an optimum noise index despite a single power supply system by adding a source resistance and a source by-pass capacitor to a field effect transistor. CONSTITUTION:A field effect transistor FETQ contains a feedback resistance Rf and a feedback capacitor Cf. At the same time, a gate resistance Rg is provided between the gate and the earth of the FETQ. Then a source resistance Rs and a source by-pass capacitor Cs are put between the gate and the source of the FETQ. Thus the minus voltage, i.e., the gate bias voltage is generated between the gate and the souece of the FETQ. Thus it is possible to control properly the working point of the FETQ by selecting properly the value of the resistance Rs and then applying the set gate bias voltage to the gate of the FETQ. In such a way, a feedback type amplifying circuit having an optimum noise index can be obtained even when a single power supply system.
    • 目的:为了获得具有最佳噪声指数的反馈型放大电路,尽管通过向场效应晶体管添加源极电阻和源极旁路电容器来获得单个电源系统。 构成:场效应晶体管FETQ包含反馈电阻Rf和反馈电容器Cf。 同时,栅极电阻Rg设置在FETQ的栅极和地之间。 然后在FETQ的栅极和源极之间放置源极电阻Rs和源极旁路电容器Cs。 因此,在FETQ的栅极和souece之间产生负电压,即栅极偏置电压。 因此,通过适当地选择电阻Rs的值,然后将设定的栅极偏置电压施加到FETQ的栅极,可以正确地控制FETQ的工作点。 以这种方式,即使在单个电源系统中也可以获得具有最佳噪声指数的反馈型放大电路。
    • 6. 发明专利
    • Semiconductor device
    • 半导体器件
    • JPS5724570A
    • 1982-02-09
    • JP9968580
    • 1980-07-21
    • Fujitsu Ltd
    • HAYAKAWA MASAHIROJIYOUDAI SHIZUKAHIRANO YUTAKA
    • H01L21/338H01L23/12H01L25/00H01L29/80H01L29/812H03F3/60
    • H01L29/80H01L2224/48091H01L2924/00014
    • PURPOSE:To obtain an FET having an input matching circuit operable at up to a high frequency and with a high gain, by forming an opening at the electrode of a source earthing capacitor, and placing a capacitor electrode for matching an input impedance in the opening. CONSTITUTION:An electrode 22 forming a source earthing capacitor C4 is formed into an annular shape, and electrodes 32a, 32b of a matching capacitor are formed at in its openings 22a, 22b. (l7, l8 are source leads, and l2, l3, l4 are gate leads). The inductance components of the respective leads and the capacitance consisting of the respective electrodes form an input impedance matching circuit. Because the earthing capacitor electrode 22 is formed into an annular shape, the electrode has not any open ends. Accordingly, it is possible to readily obtain a high- frequency and high-gain FET having no dip in the gain-frequency characteristic.
    • 目的:通过在源极接地电容器的电极处形成开口,并在电容器的电极中形成一个电容器电极,以匹配输入阻抗,以获得具有可高达高频和高增益地工作的输入匹配电路的FET 。 构成:形成源极接地电容器C4的电极22形成为环状,在其开口22a,22b中形成有匹配电容器的电极32a,32b。 (17,18是源极引线,I2,13,14是栅极引线)。 各引线的电感分量和由各个电极构成的电容形成输入阻抗匹配电路。 由于接地电容电极22形成为环状,所以电极没有任何开口端。 因此,可以容易地获得在增益频率特性中没有下降的高频和高增益FET。
    • 8. 发明专利
    • MONITOR AND CONTROL EQUIPMENT OF BUILDING MANAGING SYSTEM
    • JPH07129873A
    • 1995-05-19
    • JP27561393
    • 1993-11-04
    • FUJITSU LTD
    • HAYAKAWA MASAHIRO
    • G08B25/00G06Q50/00G06Q50/16G08B25/04H04Q9/00G06F17/60
    • PURPOSE:To improve the efficiency of management operation for building facilities by monitoring and controlling each of spaces formed by sectioning the inside of a building on the basis of a relative operation state table classified by relative facility, an item distinctive table classified by management function, and a management table classified by tenant. CONSTITUTION:For each tenant of a divided section in the building, a operation state display means classified by facility 16 displays operation states for facilities on the basis of the management table classified by tenant 14 and an operation state table classified by facility 10 which keeps the relation between operation states classified by relative facility and management function items. Further, a display means 18 classified by control function displays and sets data regarding the control and management of the facilities for management function items of the building facilities on the basis of a table classified by management function item 12. A display means classified by tenant 20 makes a data display regarding the operation states of the relative facilities for tenants, and displays and sets data regarding the control and management of the facilities for the management function items on the basis of the management table 14 classified by tenant. Consequently, the operation efficiency of the system management can further be improved.
    • 9. 发明专利
    • INDOOR TEMPERATURE/HUMIDITY SETTING
    • JPH04288436A
    • 1992-10-13
    • JP5000691
    • 1991-03-15
    • FUJITSU LTD
    • HAYAKAWA MASAHIRO
    • F24F11/02G05B15/02G05D23/00G05D27/00G05D27/02
    • PURPOSE:To select proper temperature/humidity and specify setting requirement and hence stabilize a room temperature/humidity promptly by allowing an operator of terminal equipment to be informed of the previous temperature/humidity setting values or time series data on past temperature/humidity setting values and measured values. CONSTITUTION:When there arise setting requirement for a room temperature from terminal equipment in a building, the central control room 1a controls each area's sir conditioning system so that the room temperature may be controlled by way of a control device in each area's control device. In the central control device 1a, there is installed a setting requirement processing means 2a which performs setting processing for temperature and humidity for an area control device. Moreover, these is installed a tenmperature/humidity information means 3a which stores the temperature and humidity setting information input from the processing means 2a and the temperature and humidity measured values input from the area control device as time series data. The temperature/humidity setting requirements from the terminal equipment and the previous temperature and humidity setting record are transmitted to the terminal equipment by a transmission means 4 so as to support indoor temperature and humidity setting.