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1. 发明专利

JP2014175463A Manufacturing method of semiconductor device with thin film transistor 有权
标题翻译：具有薄膜晶体管的半导体器件的制造方法
公开(公告)号：JP2014175463A
公开(公告)日：2014-09-22
申请号：JP2013046797
申请日：2013-03-08
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： NAKAYAMA MASAYA , MOCHIZUKI FUMIHIKO , TANAKA ATSUSHI , SUZUKI MASAYUKI
IPC分类号： H01L21/336 , G02F1/1368 , H01L21/02 , H01L21/285 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To manufacture a semiconductor device having high performance, high definition and flexibility by a batch method with high yield.SOLUTION: A semiconductor device 1 is manufactured by sequentially performing: an attachment process of attaching a flexible substrate 10 to one surface of a rigid support medium 12 via an adhesive 11; a thin film transistor element formation process of forming a thin film transistor element 20 on the flexible substrate 10; a peeling process of separating the flexible substrate 10 on which the thin film transistor element 20 is formed and the support medium 12; and an annealing process of performing annealing on the flexible substrate 10 after the peeling process at a temperature higher than a maximum temperature during the thin film transistor element formation process and the peeling process. In the thin film transistor element formation process, deposition of a gate electrode 30, a gate insulation film 40, an active layer 50, a source electrode and a drain electrode 70 is performed by a sputtering method.
摘要翻译：要解决的问题：通过间歇法以高产率制造具有高性能，高清晰度和柔性的半导体器件。解决方案：通过依次执行以下步骤制造半导体器件1：将柔性衬底10附接到一个表面的附接过程的刚性支撑介质12; 在柔性基板10上形成薄膜晶体管元件20的薄膜晶体管元件形成工艺; 分离其上形成有薄膜晶体管元件20的柔性基板10和支撑介质12的剥离处理; 以及在薄膜晶体管元件形成处理和剥离处理期间，在高于最高温度的温度下在剥离处理之后对柔性基板10进行退火的退火处理。在薄膜晶体管元件形成工序中，通过溅射法进行栅极30，栅极绝缘膜40，有源层50，源电极和漏极70的沉积。

2. 发明专利

JP2014127563A Semiconductor film, method for manufacturing semiconductor film, solar cell, light emitting diode, thin film transistor and electronic device 有权
标题翻译：半导体膜，制造半导体膜的方法，太阳能电池，发光二极管，薄膜晶体管和电子器件
公开(公告)号：JP2014127563A
公开(公告)日：2014-07-07
申请号：JP2012282429
申请日：2012-12-26
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： ONO MASASHI , KIKUCHI MAKOTO , TANAKA ATSUSHI , SUZUKI MASAYUKI , KANEMITSU YOSHIHIKO
IPC分类号： H01L51/42 , H01L29/06 , H01L29/786 , H01L51/05 , H01L51/30
CPC分类号： H01L31/035218 , C09K11/02 , C09K11/668 , H01L21/02568 , H01L21/02601 , H01L21/02623 , H01L29/127 , H01L29/24 , H01L29/66969 , H01L29/78696 , H01L31/0324 , H01L31/03845 , H01L31/074 , H01L31/18 , H01L33/005 , H01L33/06 , H01L33/26 , Y02E10/549 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor film capable of achieving high light current value and suppressing film peeling.SOLUTION: A semiconductor film has an aggregate of semiconductor quantum dots containing metal atom; and a ligand coordinated to the semiconductor quantum dot and represented by a general formula (A) (in the general formula (A), Xrepresents NH, S or O, Xand Xrespectively and independently represent NH, SH or OH, and n and m respectively and independently represent integers of 1 to 3.)
摘要翻译：要解决的问题：提供能够实现高光电流值并抑制膜剥离的半导体膜。解决方案：半导体膜具有含有金属原子的半导体量子点的集合体; 和与通式（A）（通式（A）表示）配位的配位体，X表示NH，S或O，X和X分别独立表示NH，SH或OH，n和m分别表示并独立地表示1〜3的整数。）

3. 发明专利

JP2014116372A Thin film transistor and manufacturing method of the same, crystalline oxide semiconductor thin film and manufacturing method of the same, display device, and x-ray sensor 有权
标题翻译：薄膜晶体管及其制造方法，其中的结晶氧化物半导体薄膜及其制造方法，显示器件和X射线传感器
公开(公告)号：JP2014116372A
公开(公告)日：2014-06-26
申请号：JP2012267659
申请日：2012-12-06
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： ONO MASASHI , TAKADA MASAHIRO , TANAKA ATSUSHI , SUZUKI MASAYUKI
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L51/50 , H05B33/14
CPC分类号： H01L29/7869 , H01L27/3262 , H01L29/66969 , H05B33/10 , H05B33/26
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a crystalline oxide semiconductor film in which an amorphous oxide semiconductor such as amorphous InGaZnO is crystallized at a low temperature and which is electrically stable; and provide a manufacturing method of a thin film transistor in which an amorphous oxide semiconductor is crystallized at a low temperature and which has an electrically stable active layer.SOLUTION: A thin film transistor manufacturing method comprises: a process of forming a gate electrode 16; a process of forming a gate insulation film 15; a process of forming an amorphous oxide semiconductor layer containing at least one element selected from In, Ga, Zn and Sn; a process of forming an active layer 12 in which at least a part of the amorphous oxide semiconductor layer is crystallized by application of a voltage to the amorphous oxide semiconductor layer; and a process of forming a source electrode 13 and a drain electrode 14.
摘要翻译：要解决的问题：提供一种结晶氧化物半导体膜的制造方法，其中诸如非晶InGaZnO的非晶氧化物半导体在低温下结晶并且是电稳定的; 并提供其中非晶氧化物半导体在低温下结晶并具有电稳定的有源层的薄膜晶体管的制造方法。解决方案：一种薄膜晶体管的制造方法，包括：形成栅电极16的工艺; 形成栅极绝缘膜15的工艺; 形成含有选自In，Ga，Zn和Sn中的至少一种元素的非晶氧化物半导体层的工艺; 形成有源层12的工序，其中至少一部分非晶氧化物半导体层通过向非晶氧化物半导体层施加电压而结晶化; 以及形成源电极13和漏电极14的工序。

4. 发明专利

JP2014093327A Semiconductor film, semiconductor film manufacturing method, solar cell, light-emitting diode, thin film transistor and electronic device 有权
标题翻译：半导体膜，半导体膜制造方法，太阳能电池，发光二极管，薄膜晶体管和电子器件
公开(公告)号：JP2014093327A
公开(公告)日：2014-05-19
申请号：JP2012241231
申请日：2012-10-31
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： ONO MASASHI , KIKUCHI MAKOTO , TANAKA ATSUSHI , SUZUKI MASAYUKI , KANEMITSU YOSHIHIKO
IPC分类号： H01L51/42 , H01L31/08 , H01L31/10 , H01L33/26 , H01L51/05 , H01L51/30
CPC分类号： Y02E10/549 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor film which can obtain a high Ip/Idand inhibit film peeling.SOLUTION: A semiconductor film includes an aggregate of semiconductor quantum dots having metal atoms and at least one ligand selected from a ligand which is coordinated to the semiconductor quantum dots and represented as a general formula (A), a ligand which is coordinated to the semiconductor quantum dots and represented as a general formula (B) and a ligand which is coordinated to the semiconductor quantum dots and represented as a general formula (C). Xrepresents -SH or -OH; Aand Beach represents a hydrogen atom or a substituent (except amino group) of atom number 1-10; Xrepresents -SH or -OH; Aand Beach represents a hydrogen atom or a substituent (except amino group) of atom number 1 or more and 10 or less; and Arepresents a hydrogen atom or a substituent of atom number 1-10.
摘要翻译：要解决的问题：提供可以获得高Ip / Id和抑制膜剥离的半导体膜。解决方案：半导体膜包括具有金属原子的半导体量子点和至少一种选自与半导体量子点，并且表示为通式（A），与半导体量子点配位并表示为通式（B）的配体和与半导体量子点配位并以通式表示的配体（C）。 X代表-SH或-OH; Aand Beach代表原子数为1-10的氢原子或取代基（氨基除外）; X代表-SH或-OH; Aand Beach代表氢原子或原子数1以上且10以下的取代基（氨基除外）。并且表示氢原子或1-10号原子的取代基。

5. 发明专利

JP2014076987A Organocopper complex, organocopper complex solution, copper oxide thin film, method for producing copper oxide thin film, and compound 有权
标题翻译： ORGANOCOPPER COMPLEX，ORGANOCOPPER COMPLEX SOLUTION，铜氧化物薄膜，生产氧化铜薄膜的方法和化合物
公开(公告)号：JP2014076987A
公开(公告)日：2014-05-01
申请号：JP2013192216
申请日：2013-09-17
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TAKADA MASAHIRO , INAGAKI YOSHIO , HAMAZAKI AKIRA , NOMURA KIMIATSU , TANAKA ATSUSHI , SUZUKI MASAYUKI
IPC分类号： C07F1/08 , C01G3/02 , C07D319/06 , C07D319/08 , C07D407/06 , C07D409/04
CPC分类号： C07D319/06 , C07F1/005 , H01L21/02565 , H01L21/02579 , H01L21/02628
摘要： PROBLEM TO BE SOLVED: To provide an organocopper complex capable of forming a copper oxide thin film by annealing treatment at low temperatures.SOLUTION: Provided are an organocopper complex having a structure represented by general formula (1), and a copper oxide thin film comprising the organocopper complex, wherein R, R, R, and Reach represent an alkyl group or the like, R, and Reach represent a hydrogen atom, an alkyl group, or the like, and when all of R, R, R, and Rrepresent a methyl group, Rand Reach represent an alkyl group or the like.
摘要翻译：要解决的问题：提供一种能够在低温下进行退火处理形成氧化铜薄膜的有机络合物络合物。解决方案：提供具有由通式（1）表示的结构的有机铜络合物和包含有机铜配合物，其中R，R，R和Reach表示烷基等，R和Reach表示氢原子，烷基等，当R，R，R和R表示全部时甲基，Rand Reach代表烷基等。

6. 发明专利

JP2013239531A Thin film transistor, manufacturing method of the same, display device, image sensor, x-ray sensor and x-ray digital imaging equipment 审中-公开
标题翻译：薄膜晶体管，其制造方法，显示器件，图像传感器，X射线传感器和X射线数字成像设备
公开(公告)号：JP2013239531A
公开(公告)日：2013-11-28
申请号：JP2012110772
申请日：2012-05-14
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： ONO MASASHI , TAKADA MASAHIRO , TANAKA ATSUSHI , SUZUKI MASAYUKI
IPC分类号： H01L21/336 , H01L27/144 , H01L27/146 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L27/1222 , H01L27/14609 , H01L27/14632 , H01L27/14659 , H01L27/14687 , H01L27/3244 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a lamination type thin film transistor capable of achieving high light stability (ΔVth≤1 V for light irradiation of λ=420nm), and suppressing hump effect in Vg-Id characteristic.SOLUTION: A thin film transistor 1 comprises: a first region A containing a composition represented by InGaZnO(a>0,b≥0,c>0,d>0, a+b+c=1) and satisfying b≤91a/74-17/40 as the oxide semiconductor layer; and second region A2 arranged on a side farther from the gate electrode than the first region and containing a composition represented by InGaZnO(e>0,f>0,g>0,h>0, and e+f+g=1), satisfying f/(e+f)≥0.80 and being different from that of the first region.
摘要翻译：要解决的问题：提供能够实现高光稳定性（＆Dgr;Vth≤1V，光照射λ= 420nm）的层压型薄膜晶体管，并且抑制Vg-Id特性中的隆起效应。解决方案：薄膜晶体管1包括：含有由InGaZnO（a> 0，b≥0，c> 0，d> 0，a + b + c = 1）表示的组成并满足b≤91a/ 74-17 / 40的组成的第一区域A 作为氧化物半导体层; （e> 0，f> 0，g> 0，h> 0，e + f + g = 1）表示的组成的第2区域A2和第2区域A2配置在比栅极电极更远的一侧，，满足f /（e + f）≥0.80并且与第一区域不同。

7. 发明专利

JP2013229495A Field-effect transistor, method of manufacturing the same, display device, image sensor, and x-ray sensor 有权
标题翻译：场效应晶体管，其制造方法，显示装置，图像传感器和X射线传感器
公开(公告)号：JP2013229495A
公开(公告)日：2013-11-07
申请号：JP2012101414
申请日：2012-04-26
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： ONO MASASHI , TAKADA MASAHIRO , TANAKA ATSUSHI , SUZUKI MASAYUKI
IPC分类号： H01L29/786 , G09F9/30 , H01L21/203 , H01L21/336 , H01L21/363 , H01L27/144 , H01L27/146
CPC分类号： H01L27/14658 , H01L21/02422 , H01L21/0254 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L27/3262 , H01L29/78693 , H01L29/78696 , H01L2251/5338
摘要： PROBLEM TO BE SOLVED: To attain both of a high mobility of over 20 cm/Vs and such high optical stability that the absolute value of a threshold shift amount |ΔVth| with respect to light irradiation of a 420 nm wavelength is lower than or equal to 1 V.SOLUTION: Field-effect transistors 10, 30, 40, and 50 each include an oxide semiconductor layer 14, a source electrode 18, a drain electrode 20, a gate insulating film 22, and a gate electrode 24. The oxide semiconductor layer 14 has a first region 14A containing InSnZnO(a,b,c,d>0 and a+b+c=1) and a second region 14B disposed closer to a distant side from the gate electrode 24 than to the first region 14A and containing InGaZnO(e>0, f>0, g>0, h>0, and e+f+g=1).
摘要翻译：要解决的问题：为了获得超过20cm / Vs的高迁移率和如此高的光学稳定性，阈值偏移量| | Dgr; Vth |的绝对值相对于420nm波长的光照射低于或等于1V。解决方案：场效应晶体管10,30,40和50各自包括氧化物半导体层14，源电极18，漏电极20 ，栅极绝缘膜22和栅电极24.氧化物半导体层14具有包含InSnZnO（a，b，c，d> 0和a + b + c = 1）的第一区域14A和布置的第二区域14B （e> 0，f> 0，g> 0，h> 0，e + f + g = 1）的栅极电极24的距离远离第1区域14A。

8. 发明专利

JP2013041945A Thin film transistor, manufacturing method of the same, display device, image sensor, x-ray sensor and x-ray digital imaging equipment 有权
标题翻译：薄膜晶体管，其制造方法，显示器件，图像传感器，X射线传感器和X射线数字成像设备
公开(公告)号：JP2013041945A
公开(公告)日：2013-02-28
申请号：JP2011177235
申请日：2011-08-12
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： ONO MASASHI , TAKADA MASAHIRO , SUZUKI MASAYUKI , TANAKA ATSUSHI
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/336 , H01L21/363 , H01L27/144 , H01L27/146 , H01L51/50 , H05B33/14
CPC分类号： H01L29/78693 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/14658 , H01L27/14659 , H01L27/3234 , H01L27/3262 , H01L29/66969 , H01L29/7869 , H05B33/10 , H05B33/26
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor which can be formed at 400°C and under, and supports high field effect mobility of 20 cm/Vs and over and low off-current causing normally-off at the same time.SOLUTION: A thin film transistor 1 comprises: a gate electrode 16; a gate insulation film 15; an oxide semiconductor layer including a first region A1 represented as In(a)Ga(b)Zn(c)O(d) (a>0,b>0,c>0, a+b+c=1, d>0) and satisfying a≤37/60, b≤91a/74-17/40, b≥3a/7-3/14, c≤3/5, and a second region A2 represented as In(p)Ga(q)Zn(r)O(s) (q/(p+q)>0.250, p>0, q>0, r>0, s>0) and located farther than the first region with respect to the gate electrode, and arranged opposed to the gate electrode via the gate insulation film; and a source electrode 13 and a drain electrode 14 which are capable of being conducted via the oxide semiconductor layer.
摘要翻译：要解决的问题：为了提供可以在400℃以下形成的薄膜晶体管，并且支持20cm的高场效应迁移率（SP SP =“POST”> 2 / Vs / Vs），并且过电流和低电流同时导致正常关断。解决方案：薄膜晶体管1包括：栅电极16; 栅极绝缘膜15; （a）Ga（b）Zn（c）O（d）（a> 0，b> 0，c> 0，a + b + c = 1，d>）表示的第一区域A1的氧化物半导体层， 0），满足a≤37/ 60，b≤91a/ 74-17 / 40，b≥3a/ 7-3 / 14，c≤3/ 5，第二区域A2表示为In（p）Ga ）Zn（r）O（s）（q /（p + q）> 0.250，p> 0，q> 0，r> 0，s> 0）并且相对于栅电极位于比第一区域更远的位置，并通过栅极绝缘膜与栅电极相对布置; 以及能够经由氧化物半导体层传导的源电极13和漏电极14。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2012041538A Inorganic compound and composition and molded body containing the same, light-emitting device, and solid laser device 审中-公开
标题翻译：无机化合物及其组合物和包含其的成型体，发光装置和固体激光装置
公开(公告)号：JP2012041538A
公开(公告)日：2012-03-01
申请号：JP2011204098
申请日：2011-09-20
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TAKADA MASAHIRO , SUZUKI MASAYUKI
IPC分类号： C09K11/80 , C01F17/00 , H01L33/50 , H01S3/16
CPC分类号： H01L2224/48091 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a garnet type compound designed to make a substitution ion such as Pr easily solid-soluble in the matrix compound.SOLUTION: The garnet type compound is expressed by general formula: Al(III)A2(II)A3(III)B(III)C1(III)C2(IV)O, wherein the Roman numeral denotes an ionic valency number; A1 to A3 are elements in A site; B is an element in B site; C1 and C2 are elements in C site; A1, A2, B, C1 and C2 are each at least one kind of element with the ionic valency number; A3 is at least one kind of element selected from the group consisting of trivalent rare earths (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu); A1 and A3 represent different elements; 0
摘要翻译：要解决的问题：提供一种石榴石型化合物，其被设计成使得易于固溶于基质化合物中的取代离子如Pr。石榴石型化合物以通式表示：Al（III） 3-2x A2（II） x A3（III） x B（III） 2 C1（III） 3-x C2（IV） 12 ，其中罗马数字表示离子价数; A1到A3是A站点中的元素; B是B站点中的一个元素; C1和C2是C位点的元素; A1，A2，B，C1和C2各自为具有离子价数的至少一种元素; A3是选自三价稀土（La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu）中的至少一种元素; A1和A3代表不同的元素; 0

10. 发明专利

JP2011181803A Method of manufacturing igzo-based amorphous oxide thin film and method of manufacturing field effect transistor using the same 有权
标题翻译：制造基于IGZO的非晶氧化物薄膜的方法及其制造方法使用场效应晶体管
公开(公告)号：JP2011181803A
公开(公告)日：2011-09-15
申请号：JP2010046315
申请日：2010-03-03
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： UMEDA KENICHI , MOCHIZUKI FUMIHIKO , TANAKA ATSUSHI , SUZUKI MASAYUKI
IPC分类号： H01L21/336 , C23C14/08 , C23C14/34 , C23C14/58 , H01L21/20 , H01L21/28 , H01L21/283 , H01L21/285 , H01L21/316 , H01L21/363 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an IGZO-based amorphous oxide thin film which has a desired electric resistance value within a range from a conductor region to an insulator region, and also has excellent stability against electrical stress and heat.
SOLUTION: The present invention relates to the method of manufacturing the IGZO-based amorphous oxide thin film by forming the IGZO-based amorphous oxide thin film on a substrate by sputtering and then performing annealing processing, in which the amorphous oxide thin film having the arbitrary electric resistance value within the range from the conductor region to the insulator region is manufactured by changing a combination of an amount of water in a film forming device and temperature of the annealing processing.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造IGZO基非晶氧化物薄膜的方法，该IGZO基非晶氧化物薄膜在从导体区域到绝缘体区域的范围内具有期望的电阻值，并且还具有优异的电应力稳定性，热。解决方案：本发明涉及通过溅射在基板上形成IGZO基非晶氧化物薄膜，然后进行退火处理来制造IGZO基非晶氧化物薄膜的方法，其中非晶氧化物薄膜通过改变成膜装置中的水量与退火处理的温度的组合来制造具有从导体区域到绝缘体区域的范围内的任意电阻值。版权所有（C）2011，JPO＆INPIT

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