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1. 发明专利

JP2014060426A Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014060426A
公开(公告)日：2014-04-03
申请号：JP2013232191
申请日：2013-11-08
申请人： Fuji Electric Co Ltd , 富士電機株式会社
发明人： MATSUI TOSHIYUKI , HOSHI YASUYUKI , KOBAYASHI YASUYUKI , MIYASAKA YASUSHI
IPC分类号： H01L29/861 , H01L21/329 , H01L29/06 , H01L29/868
摘要： PROBLEM TO BE SOLVED: To make a tolerance to an attenuation factor di/dt of reverse recovery current high enough to withstand lightning surge with a forward voltage VF kept low in a converter diode or the like.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: selectively forming pdiffusion regions 23, 24, and 25 having a depth of 14-20 μm (design value) in a surface layer of an nsemiconductor layer 22; and forming a low-lifetime region 32 in a whole chip by irradiating all the chip surface with He ions to introduce a lifetime killer from a position d2 shallower than a position d1 of the plane 31 of PN junction of the nsemiconductor layer 22 and the pdiffusion region 23 to a deep position d3. The irradiation of He ions is performed so that the depth of the pdiffusion region 23 is equal to or larger than a half-value width of the He ion irradiation, a peak position of the He ions is deeper than the half-value width of the He ion irradiation within a range of 80-120% of the depth of the pdiffusion region 23, and the depth of the d1 is deeper than the half-value width of the He ion irradiation.
摘要翻译：要解决的问题：为了使逆向恢复电流的衰减系数di / dt的公差高到足以承受在转换器二极管等中保持较低的正向电压VF的雷电浪涌。解决方案：一种用于制造半导体器件的方法包括以下步骤：在半导体层22的表面层中选择性地形成深度为14-20μm（设计值）的扩散区域23,24和25; 并且通过用He离子照射所有芯片表面，在整个芯片中形成低寿命区域32，以从比半导体层22的PN结的平面31的位置d1更浅的位置d2引入终身杀伤剂，并且扩散区域23到深位置d3。进行He离子的照射，使得扩散区域23的深度等于或大于He离子照射的半值宽度，He离子的峰值位置比其半值宽度更深 He离子辐射在扩散区域23的深度的80-120％的范围内，并且d1的深度比He离子照射的半值宽度更深。

2. 发明专利

JP2012165013A Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2012165013A
公开(公告)日：2012-08-30
申请号：JP2012101066
申请日：2012-04-26
申请人： Fuji Electric Co Ltd , 富士電機株式会社
发明人： MATSUI TOSHIYUKI , HOSHI YASUYUKI , KOBAYASHI YASUYUKI , MIYASAKA YASUSHI
IPC分类号： H01L29/868 , H01L21/329 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To sufficiently increase capability of an attenuation factor di/dt of a reverse recovery current to a degree capable of withstanding a lightning surge with keeping a forward voltage VF low in a converter diode and the like.SOLUTION: On a surface layer of an nsemiconductor layer 22, pdiffusion regions 23, 24, 25 of a depth of 14-20 μm (design value) are selectively formed. A He ion is irradiated on the whole of a chip and a lifetime killer is introduced from a position d2 shallower than a position d1 of a PN junction surface 31 including the nsemiconductor layer 22 and the pdiffusion region 23 to a position d3 deeper than the position d1 to form a low lifetime region 32 on the whole of the chip. In irradiation of the He ion, a depth of the pdiffusion region 23 is made to become not shallower than half maximum full-width of irradiation of the He ion, and a peak position of the He ion is made to become deeper than half maximum full-width of irradiation of the He ion and within a range of 80-120% of the depth of the pdiffusion region 23, and a forward voltage VF is made to become 1.2 V or more and 1.5 V or less.
摘要翻译：要解决的问题：为了将逆向恢复电流的衰减系数di / dt的能力充分提高到能够耐受雷电浪涌的程度，并且在转换器二极管等中保持正向电压VF低的能力。解决方案：在n - / SP半导体层22的表面层上，p + 扩散区23,24,25 的深度为14-20μm（设计值）。在整个芯片上照射He离子，并且从比包括n型半导体层的PN结表面31的位置d1更浅的位置d2引入寿命消除器 22和p + 扩散区域23到比位置d1更深的位置d3，以在整个芯片上形成低寿命区域32。在He离子的照射中，使p + 扩散区23的深度不比He离子的照射的半最大全宽更浅，使He离子的位置变得比He离子的照射的半最大全宽更深，并且在p + 的深度的80-120％的范围内扩散区域23，使正向电压VF为1.2V以上且1.5V以下。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2000208527A MANUFACTURE OF SUPER-JOINT SEMICONDUCTOR ELEMENT AND THE SUPER-JOINT SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JP2000208527A
公开(公告)日：2000-07-28
申请号：JP417699
申请日：1999-01-11
申请人： FUJI ELECTRIC CO LTD
发明人： MIYASAKA YASUSHI , FUJIHIRA TATSUHIKO
IPC分类号： H01L21/265 , H01L21/329 , H01L21/336 , H01L29/06 , H01L29/78 , H01L29/861 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide a manufacture which can manufacture with superior mass productivity and readily super-joint semiconductor elements, in which a trade-off relation between an on-resistance and a breakdown voltage is improved and an increase in current capacity due to reduction in on-resistance is possible, irrespective of a high breakdown voltage. SOLUTION: In this manufacturing method, in an on-state, a current flows, and in an off-state, at least one of a depleting n drift region 22a and p partition region 22b, for example, the p partition region 22b is formed with ion implantation, in particular, ion implantation in which an accelerating voltage continuously changes. Another region may be formed by epitaxial growth, or may be formed by diffusion of surface emptiness.

4. 发明专利

JPH0823087A DOUBLE SIDE TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0823087A
公开(公告)日：1996-01-23
申请号：JP15509094
申请日：1994-07-07
申请人： FUJI ELECTRIC CO LTD , HAKUSAN SEISAKUSHO KK
发明人： ITO SHINICHI , MIYASAKA YASUSHI , NISHIZAWA SHIGERU
IPC分类号： H01L29/747 , H01L29/861
摘要： PURPOSE:To expand the continuity region at the avalanche breakdown between pn bases of a bipolar two-terminal thyristor, thereby improving the surge current withstanding value. CONSTITUTION:A main contact face 41 contacts commonly with an only emitter region 3 and base-emitter region 2. The distance between the edges of the face 41 and the region 3 on a main face is increased at the corners from marginal parts, thereby elevating the resistance of the region 3 itself at the corners. Or, the distance between the edge of the region 3 and region 2 on the main face is increased at the corners from the marginal parts to thereby elevate the resistance of the region 2 itself at the corners.

5. 发明专利

JPH05160316A SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH05160316A
公开(公告)日：1993-06-25
申请号：JP32487591
申请日：1991-12-10
申请人： FUJI ELECTRIC CO LTD
发明人： MIYASAKA YASUSHI
IPC分类号： H01L23/48
摘要： PURPOSE:To provide a semiconductor device such as a bidirectional diode where a proper solder fillet can be made between a chip and a terminal board, by preventing defective assembling at the time of soldering the terminal plate to the semiconductor chip. CONSTITUTION:In a planar type semiconductor element, where the periphery, except an electrode face of the surface of a chip 1, is covered with a protective film 1a, and besides an external terminal board 2 is soldered to the electrode face, a hole 2a is opened in the center of the external terminal board, and further a conical face 2b such that the board face of the terminal board is recessed toward the rear near the hole, is made. When such bored terminal board is soldered to the electrode face of a semiconductor chip, surplus fused solder overflows to the rear side of the terminal board through the hole opened in the center of the terminal board, so it does run large onto a protective film toward the peripheral margin of the chip, whereby proper solder fillets can be formed between the chip and the terminal board.

6. 发明专利

JP2001085705A METHOD FOR MANUFACTURING SCHOTTKY BARRIER DIODE 失效
公开(公告)号：JP2001085705A
公开(公告)日：2001-03-30
申请号：JP26149199
申请日：1999-09-16
申请人： FUJI ELECTRIC CO LTD
发明人： KITAMURA SHOJI , MATSUI TOSHIYUKI , MIYASAKA YASUSHI
IPC分类号： H01L29/872 , H01L29/47
摘要： PROBLEM TO BE SOLVED: To provide a method, capable of easily and stably manufacturing an SBD where reverse leakage current is restrained without increasing the forward voltage. SOLUTION: After a P-guard ring region 20 and an oxide film 21 are formed, thermal treatment is performed in a hydrogen atmosphere or in a reduced atmosphere containing silicon, and a low concentration region 22 is formed on a surface layer of an N-epitaxial layer 11. After an undoped polysilicon film is deposited on the N-epitaxial layer 11, thermal treatment is performed in a reduced atmosphere, diffusion of a dopant from the N-epitaxial layer 11 to a polysilicon film 50 is promoted. After removal is performed through oxidation, an electrode is formed. After an undoped amorphous silicon film is deposited on the N-epitaxial layer 11, thermal treatment is performed in a reduced atmosphere, and crystallization is performed, and an electrode is formed on the crystallized film.

7. 发明专利

JP2000323725A SCHOTTKY BARRIER SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JP2000323725A
公开(公告)日：2000-11-24
申请号：JP13346499
申请日：1999-05-14
申请人： FUJI ELECTRIC CO LTD
发明人： MATSUI TOSHIYUKI , KITAMURA SHOJI , MIYASAKA YASUSHI , FUJIHIRA TATSUHIKO
IPC分类号： H01L21/285 , H01L29/47 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To provide a Schottky barrier semiconductor device, which can be increased in dielectric strength by eliminating electric field concentration at an end edge of a stacked semiconductor layer forming a Schottky junction, and its manufacture. SOLUTION: This device is equipped with an n type stacked semiconductor layer 15 formed on an n type semiconductor layer 11, a metal layer 15 formed thereupon by a Schottky junction, and a p type guard ring 12 which is formed in the semiconductor layer 11 in the Schottky junction region of the stacked semiconductor layer 14 and electrically connected to the metal layer 15 and a layer end part 14a of the stacked semiconductor layer 14 is formed reaching the guard ring 12 and its layer end part 14a is inverted into a p type. The stacked semiconductor layer 14 and layer end part 14a are a uniform continuous film free of a break, so there is no physical foundary and an electric field is not concentrated, so that high dielectric strength and high reliability are actualized. On the top surface of the layer end part 14a, the Schottky junction disappears to eliminate electric field concentration.

8. 发明专利

JPH05335558A 失效
公开(公告)号：JPH05335558A
公开(公告)日：1993-12-17
申请号：JP14305092
申请日：1992-06-04
申请人： FUJI ELECTRIC CO LTD
发明人： MIYASAKA YASUSHI
IPC分类号： H01L29/74 , H01L29/747 , H01L29/861
摘要： PURPOSE:To form a bidirectional 2-terminal thyristor in which delay of a turn-on at a center as compared with a periphery is prevented by increasing an impurity concentration of the periphery of a base region of 2nd, 4-th layers of a 5-layer structure higher than that at the center to be scarcely broken over. CONSTITUTION:A P -type base region 2 is formed by selective impurity diffusion from both side surfaces by using an N -type silicon substrate 1. Further, its center is covered with a mask of an oxide film, and again impurity-diffused to form an annular P -type region 6. The region 6 having a high surface impurity concentration becomes deeper than a P -type region. Thereafter, an N -type emitter region 3 is formed on a surface layer including a boundary 7 between the region 2 and the region 6 by impurity diffusing. Eventually, an opening is formed at the film 4 of the surface, aluminum is deposited, patterned to form electrodes 5 on both side surfaces, thereby forming a thyristor. A relatively high impurity concentration region is formed on a periphery and when a resistor of one region of the junction of the parts is reduced, a breakover scarcely occurs.

9. 发明专利

JP2001230413A SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JP2001230413A
公开(公告)日：2001-08-24
申请号：JP2000039662
申请日：2000-02-17
申请人： FUJI ELECTRIC CO LTD
发明人： SATO TAKAHIRO , UENO KATSUNORI , FUJIHIRA TATSUHIKO , MIYASAKA YASUSHI , ONISHI YASUHIKO , IWAMOTO SUSUMU
IPC分类号： H01L29/06 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element for increasing current capacity due to the decrease in the forward voltage and on-resistance regardless of a high breakdown voltage by drastically relaxing the trade-off relationship between the forward voltage/on-resistance and the breakdown voltage. SOLUTION: In a semiconductor element having an n- low-resistance layer n+ drain layer 11 and a parallel pn layers (12a and 12b) between main surfaces where a source electrode 17 and a drain electrode 18 are provided, an n- high- resistance region 20 is provided at a peripheral end part and at the same time a p- high-region 23 is provided in the width direction of the peripheral end part. Also the p+ region may be provided in the depth direction of the peripheral end part.

10. 发明专利

JPH10335679A DIODE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH10335679A
公开(公告)日：1998-12-18
申请号：JP14362497
申请日：1997-06-02
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIHIRA TATSUHIKO , MIYASAKA YASUSHI
IPC分类号： H01L29/872 , H01L21/329 , H01L29/47 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a diode and a manufacturing method thereof, wherein the diode is excellent as a whole in various properties such as switching speed, withstand voltage, leakage current, forward voltage, avalanche breakdown strength and the like. SOLUTION: (1): In a PN junction-type diode, even the lowest-receptivity part of a P anode region 3a is set 1/100 or less as low in receptivity as an N drift layer 2 and 0.1 to 0.5 μm in thickness. (2): In a Sohottky diode, an N high-resistance region is provided to the surface layer of the N drift layer 2, and a Schottky electrode is brought into contact with the surface of the N high-resistance region. (3): In a PN junction-type diode and a Schottky diode, an N buried region is provided only inside the vertical projection of the P anode region 3a or a P ring region 12.

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