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1. 发明专利

JPH10219479A SEALED CONTACT MATERIAL 失效
公开(公告)号：JPH10219479A
公开(公告)日：1998-08-18
申请号：JP1857597
申请日：1997-01-31
申请人： FURUKAWA ELECTRIC CO LTD
发明人： HIRASAWA TAKESHI , YAMAMOTO KIYOSHI , OHASHI YASUKAZU
IPC分类号： C23C30/00 , C22C5/06 , C22C30/00 , H01H1/04
摘要： PROBLEM TO BE SOLVED: To provide an inexpensive sealed contact material having a long contact service life even under a highly loaded conditions. SOLUTION: This material is the one in which a coating layer having >=0.1μm thickness is formed on a contact base material, and this coating layer has a compsn. contg. at least one element among Zn, Cd, In, Tl, Sn, Pb, As, Sb and Bi by 0.5 to 50at%, contg. at least one element of C and Si by 5 to 50at%, contg. 0 to 40at% O (oxygen), and the balance >=30at% Cu or Ag. Since the material contains adhesion reducing elements such as Zn, Cd, In, Tl, Sn, Pb, As, Sb, Bi or the like and furthermore contains arc damage dispersing elements of C or Si, adhesion does not occur between contacts even under high loads in which arc discharge is generated, and a good contact service life can be obtd. Moreover, it is inexpensive since expensive Rh, Ru, etc., are not used.

2. 发明专利

JPH10112235A FORMING METHOD FOR HEAT-RESISTANT FILM ON CONTACT POINT FACE OF REED PIN 失效
公开(公告)号：JPH10112235A
公开(公告)日：1998-04-28
申请号：JP26564596
申请日：1996-10-07
申请人： FURUKAWA ELECTRIC CO LTD
发明人： YAMAMOTO KIYOSHI , HIRASAWA TAKESHI , OHASHI YASUKAZU
IPC分类号： C23C14/34 , H01H1/04 , H01H11/04
摘要： PROBLEM TO BE SOLVED: To provide a method for efficiently forming a heat-resistant film of a W-In alloy or the like on the contact point face of a reed pin which constitutes a reed switch. SOLUTION: Heat-resistant films are formed by sputtering on the contact point faces of many reed pint 40 in a film-forming chamber 10. A large number of reed pins 40 are vertically arranged on a holder 30, the angle θ between the contact point faces 41 of the reed pins 40 and sputtering targets 20, 21 is set to 80-90 deg.. The gas pressure in the film-forming chamber 10 is regulated, so that the average free stroke λ of sputter grains expressed by the equation becomes the distance (d) or below between the contact point faces 41 of the reed pins 40 and the grain discharge faces 22, 23 of the targets 20, 21. Equation: λ≈1/[π(r1 +r2 ) n], where λ: mean free path (cm) of sputter grains, r1 : atomic radius (cm) of sputter grain, r2 : atomic radius (cm) of discharged gas molecule, and n: number of discharged gas molecules per 1cm .

3. 发明专利

JPH06322518A TERMINAL OF IC SOCKET 失效
公开(公告)号：JPH06322518A
公开(公告)日：1994-11-22
申请号：JP10916893
申请日：1993-05-11
申请人： FURUKAWA ELECTRIC CO LTD
发明人： MURATA HIDEAKI , OHASHI YASUKAZU , OZAKI MASANORI
IPC分类号： C23C14/06 , C23C14/14 , H01R13/03
摘要： PURPOSE:To provide the terminal of an IC socket having a long service life without generating a contact fault with IC leads. CONSTITUTION:This terminal of the IC socket is assembled to the IC socket. At least the surface of the terminal in contact with the IC is coated with a film consisting of at least one kind selected from a group of Ru, Rh, W, Re or their alloy via an intermediate layer consisting of Ti, Zr or their alloy. The adhesive property of the terminal surface and the surface layer film is improved by interposing the intermediate layer in such a manner.

4. 发明专利

JPH05304229A 失效
公开(公告)号：JPH05304229A
公开(公告)日：1993-11-16
申请号：JP910293
申请日：1993-01-22
申请人： FURUKAWA ELECTRIC CO LTD
发明人： MURATA HIDEAKI , OHASHI YASUKAZU , OZAKI MASANORI
IPC分类号： H01L23/32 , H01R33/76
摘要： PURPOSE:To stabilize contact resistance over a long term by forming a conductive film, in which transition of Sn or Pb to be applied on an IC lead is retarded, on the end face of a terminal. CONSTITUTION:IC socket terminal 3 made of beryllium copper has a terminal end face 3a contacting with an IC wherein the terminal end face 3a is applied with a conductive film composed of one or more of Ru, Rh, Pt, Ir, Re, W, Mo, Cr, Ta, Nb, V, Al or alloys thereof or nitride, carbide, silicide, or aluminium compound of transition metal. The film is deposited by 50nm-20mum through normal film deposition technology, e.g. thermal CVD method or plasma method. The film is conductive in any case and also hard except in case of Al. The film has such properties as diffusion is suppressed with respect to Cu, Sn, or Pb, wettability is low, and transition of Sn or Pb is retarded. When such conductive film is employed in the terminal of IC socket, oxide film is not formed on the end face and initial conditions are sustained for a long term resulting in a prolonged service life.

5. 发明专利

JPH1040762A SEALED ELECTRIC CONTACT MATERIAL 失效
公开(公告)号：JPH1040762A
公开(公告)日：1998-02-13
申请号：JP19771196
申请日：1996-07-26
申请人： FURUKAWA ELECTRIC CO LTD
发明人： YAMAMOTO KIYOSHI , HIRASAWA TAKESHI , OHASHI YASUKAZU
IPC分类号： H01H1/023 , H01B1/02 , H01H1/02 , H01H1/66
摘要： PROBLEM TO BE SOLVED: To provide an inexpensive sealed electric contact material usable over a wide range from a light load to a heavy load by forming a coating layer of C and Cu, C and Ag, C and Cu and Ag on a substrate by gas phase growth. SOLUTION: A sealed electric contact material is produced by forming a coating layer of C and Cu, C and Ag, or C and Cu and Ag on a substrate by gas phase growth. Or the coating layer is a monolayer or two or more layers of unit coating layer constituted of a lower coating layer consisting of 51-100wt.% of Ci and/or Ag and the balance C and an upper coating layer formed on the lower coating layer and consisting of 51-100wt.% of C and the balance Cu and/or Ag. The coating layer is 0.1μm thick of thicker. Of this sealed electric contact material, since Cu or Ag has a relatively low melting point, the material tends to cause sticking at the time of opening or closing contacts. C, therefore, suppress sticking. Moreover. attributed to the gas phase growth of the coating layer, C particles van be finely dispersed and sticking and parting can be suppressed.

6. 发明专利

JPH1021772A SEALED CONTACT MATERIAL 失效
公开(公告)号：JPH1021772A
公开(公告)日：1998-01-23
申请号：JP17445196
申请日：1996-07-04
申请人： FURUKAWA ELECTRIC CO LTD
发明人： HIRASAWA TAKESHI , YAMAMOTO KIYOSHI , OHASHI YASUKAZU
IPC分类号： C22C27/04 , H01H1/02 , H01H1/023 , H01H1/025 , H01H1/66
摘要： PROBLEM TO BE SOLVED: To provide a sealed contact material with stable contact switching operation for a long time and long life. SOLUTION: A material has at least one layer of a 0.1μm or more thick covering layer comprising 0.5-50at.% at least one element selected from the additive element group comprising Zn, Cd, In, Tl, Sn, Pb, As, Sb, Bi, 5-20at.% at least one element selected from the group comprising Cu, Ag, Au, and the balance at least one element selected from the base element group comprising Mo, Zr, Nb, Hf, Ta, W, or at least one element selected from the base element group comprising Mo, Zr, Nb, Hf, Ta, W, and O (oxygen) on a contact base material.

7. 发明专利

JPH07153339A SEALED CONTACT POINT MATERIAL AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH07153339A
公开(公告)日：1995-06-16
申请号：JP3911494
申请日：1994-02-14
申请人： FURUKAWA ELECTRIC CO LTD
发明人： OZAKI MASANORI , MURATA HIDEAKI , OHASHI YASUKAZU , YOSHINO KOJI
IPC分类号： H01H1/04 , H01H1/66
摘要： PURPOSE:To provide sealed contact point materials and its manufacturing method wherein the initial contact resistance and the contact resistance of the materials are within a narrow dispersion and the materials have excellent melting and depositing resistance and are resistance. CONSTITUTION:A sealed contact point material is composed of a contact base material and a contact point coating layer which has at least 0.1mum thickness, and which contains at least one element selected from a group of Mo, Zr, Nb, Hf, Ta, and W and 0.5-10 atomic % of one or more elements formed on the contact base material and selected from a group of Li, K, Ce, Cs, Ba, Sr, Ca, Na, Y, La, Sc, Th, and Rb.

8. 发明专利

JPH02177212A HEAT-PROOF ELECTRIC WIRE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02177212A
公开(公告)日：1990-07-10
申请号：JP33212588
申请日：1988-12-28
申请人： FURUKAWA ELECTRIC CO LTD
发明人： SUZUKI TAKUYA , ENDO TAKESHI , OHASHI YASUKAZU , FUKUDA MITSUAKI
IPC分类号： H01B7/29 , H01B13/16
摘要： PURPOSE:To achieve improved heat resistance and small diameter size formability by providing multi-covering with two kinds of specific layers formed on a conductor of a prescribed material via a barrier layer. CONSTITUTION:A conductor 1 made of copper, copper alloy or copper based composite metal is covered, via a barrier layer 2, with an insulating alumite layer 3 which has been subjected to anode oxidation and hole-filling. Further, the layer 3 is covered with a ceramic layer 4. This multi-layer covering allows heat-resistance temperature that is higher than melting temperature of the conductor 1, and is free of cracks even when small-path coil winding is employed. Thus, a heat-proof electric wire obtained using this method is characterized by enhanced heat resistance and small wire formability.

9. 发明专利

JPH0238596A COATING METHOD FOR SURFACE 失效
公开(公告)号：JPH0238596A
公开(公告)日：1990-02-07
申请号：JP18598588
申请日：1988-07-26
申请人： FURUKAWA ELECTRIC CO LTD
发明人： ENDO TAKESHI , SUZUKI TAKUYA , FUKUDA MITSUAKI , OHASHI YASUKAZU
IPC分类号： C25D11/00 , C23C14/06 , C23C14/58 , C23C28/00 , C25D11/04 , C25D11/26
摘要： PURPOSE:To thoroughly eliminate a hole perforating a film by performing anodic-oxidation treatment which is performed for the purpose of sealing a pinhole generated on a coated surface layer in an initial stage while giving ultrasonic vibration to electrolytic liquid. CONSTITUTION:An Nb film is formed on Al alloy by high-frequency magnetron sputtering in a vacuum vessel. Then anodic-oxidation treatment is performed while giving ultrasonic vibration to electrolytic liquid. The oxide film formed on the surface of the Nb film is polished and removed and the Nb film is relaminated by sputtering. When this is immersed in hydrochloric acid at room temp., erosion is not caused on the surface of the Nb film even after the elapse of 24 hours. When ultrasonic vibration is not given) an eroded part is generated on the surface of the Nb film in about 3-6 hours. When ultrasonic vibration is given, anodic-oxidation treatment is performed while discharging gaseous H2 incorporated in a pinhole to the outside and therefore filling-up of the pinhole is completely performed and surface coating thoroughly free from the pinhole perforating the film is enabled.

10. 发明专利

JPH10228828A SEALED CONTACT MATERIAL AND SEALED CONTACT WITH ELECTRODE MADE THEREOF 失效
公开(公告)号：JPH10228828A
公开(公告)日：1998-08-25
申请号：JP2900597
申请日：1997-02-13
申请人： FURUKAWA ELECTRIC CO LTD
发明人： HIRASAWA TAKESHI , YAMAMOTO KIYOSHI , OHASHI YASUKAZU
IPC分类号： C23C14/06 , H01H1/04
摘要： PROBLEM TO BE SOLVED: To provide an economical sealed contact material with a long contact life even in high load conditions. SOLUTION: This sealed contact material is constituted of a contact substrate and a coating layer with 0.1μm or more thick formed on the substrate and the coating layer contains 50at.% of at least one of Cu, Ag, and Au, 0.5-50at.% of at least one of C and Si, 0.5-30at.% of Ti, Zr, Hf, V, Nb, Ta, Mo, W, Re, Ru, Os, and Ir, and the balance inevitable impurities. Consequently, since the material contains an arc damage dispersing elements and melting point improving elements, the material hardly causes opening or closing failure due to an arc and the coating layer hardly causes film shaped peeling even in high load conditions. A sealed contact using the material for an electrode is provided with stable contact characteristic for a long time. Moreover, since the material contains no Rh and Ru, it is economical.

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